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    DIODE MARKING CODE 53 Search Results

    DIODE MARKING CODE 53 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MARKING CODE 53 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    philips diode PH 33D

    Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817


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    PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


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    PDF 1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE

    Untitled

    Abstract: No abstract text available
    Text: VBUS051BD-HD1 Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • • • • 1 2 20856 20855 MARKING example only • XY • • • • 21121 Bar = cathode marking Y = type code (see table below) X = date code


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    PDF VBUS051BD-HD1 LLP1006-2L AEC-Q101 2002/95/EC 2002/96/EC 18-Jul-08

    VISHAY diode MARKING EG

    Abstract: No abstract text available
    Text: VBUS051BD-HD1 Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • • • • 1 2 20856 20855 MARKING example only • XY • • • 21121 Bar = cathode marking Y = type code (see table below) X = date code Ultra compact LLP1006-2L package


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    PDF VBUS051BD-HD1 LLP1006-2L 2002/95/EC 2002/96/EC 11-Mar-11 VISHAY diode MARKING EG

    Q62702-B0825

    Abstract: No abstract text available
    Text: BBY 53-03W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code Pin Configuration


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    PDF 3-03W Q62702-B0825 OD-323 Sep-11-1996 Q62702-B0825

    Untitled

    Abstract: No abstract text available
    Text: VBUS051BD-HD1 www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • 1 2 20856 • • • 20855 MARKING example only XY • • • • 21121 Bar = cathode marking Y = type code (see table below)


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    PDF VBUS051BD-HD1 LLP1006-2L 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: VBUS051BD-HD1 www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • 1 2 20856 • • • 20855 MARKING example only XY • • • • 21121 Bar = cathode marking Y = type code (see table below)


    Original
    PDF VBUS051BD-HD1 LLP1006-2L 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: VBUS051BD-HD1 www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • 1 2 20856 • • • 20855 MARKING example only XY • • • • 21121 Bar = cathode marking Y = type code (see table below)


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    PDF VBUS051BD-HD1 LLP1006-2L 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Q62702-B0862

    Abstract: diode T3 Marking diode marking AU
    Text: BBY 53-02W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation 2 for VCO’s in mobile communications equipment • High ratio at low reverse voltage 1 VES05991 Type Marking Ordering Code


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    PDF 3-02W VES05991 Q62702-B0862 SCD-80 Q62702-B0862 diode T3 Marking diode marking AU

    Untitled

    Abstract: No abstract text available
    Text: VCUT0505B-HD1 Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2L FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) • XY • • • 21121 Bar = pin 1marking X = date code Y = type code (see table below)


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    PDF VCUT0505B-HD1 LLP1006-2L LLP1006-2L 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: VCUT0505B-HD1 Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2L FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) • XY • • • 21121 Bar = pin 1marking X = date code Y = type code (see table below)


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    PDF VCUT0505B-HD1 LLP1006-2L LLP1006-2L 2002/95/EC 2002/96/EC 11-Mar-11

    Q62702-B580

    Abstract: No abstract text available
    Text: BB 535 Silicon Variable Capacitance Diode • For UHF and TV/TR tuners • Large capacitance ratio, low series resistance Type Marking Ordering Code Pin Configuration Package BB 535 white S 1=C SOD-323 Q62702-B580 2=A Maximum Ratings Parameter Symbol Values


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    PDF OD-323 Q62702-B580 Jan-08-1997 CTA/C25 Q62702-B580

    S11-Parameters

    Abstract: VR 12750 Q62702-A0062 ts 083 diode 6390 ua 7230 c
    Text: Silicon Schottky Diode BAT 15-098 Preliminary Data DBS mixer application to 10 GHz Low noise figure ● Low barrier type ● ● ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration tape and reel


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    PDF Q62702-A0062 OD-123 S11-Parameters VR 12750 Q62702-A0062 ts 083 diode 6390 ua 7230 c

    BAT 545

    Abstract: Q62702-A66
    Text: Silicon Dual Schottky Diode BAT 15-099 Preliminary Data Features DBS mixer application to 12 GHz ● Low noise figure ● Low barrier type ● ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel


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    PDF Q62702-A66 P-SOT-143-4-6 BAT 545 Q62702-A66

    diode marking 53

    Abstract: marking VB DIODE
    Text: SIEMENS BBY 53 Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code Pin Configuration


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    PDF Q62702-B824 OT-23 diode marking 53 marking VB DIODE

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BBY 53-03W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO’s in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code BBY 53-03W


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    PDF 3-03W Q62702-B0825 OD-323 235b05 flE35bG5 1204C fl535bQ5

    diode T3 Marking

    Abstract: maxim CODE TOP MARKING diode marking code maxim
    Text: SIEMENS BBY 53-03W Silicon Tuning Diode Prelim inary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage Type Marking O rdering Code Pin Configuration


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    PDF 3-03W Q62702-B825 OD-323 diode T3 Marking maxim CODE TOP MARKING diode marking code maxim

    Q62702B

    Abstract: marking L
    Text: SIEMENS BBY 53-02W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO’s in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code Pin Configuration


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    PDF 3-02W Q62702-B0862 SCD-80 Q62702B marking L

    Untitled

    Abstract: No abstract text available
    Text: SIEM EN S BAR 65-07 Silicon RF Switching Diode Preliminary data • Low loss, low capacitance PIN-Diode • Band switch for TV-tuners • Series diode for mobile communications transmit-receive switch • Unconnected pair Type Marking Ordering Code BAR 65-07


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    PDF OT-143 0235bD5 0235bQ5 Q12Q541 100MHz E35bG5

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BB 535 Silicon Variable Capacitance Diode • For UHF and TV/TR tuners • Large capacitance ratio, low series resistance Type BB 535 Marking Ordering Code white S Q62702-B580 , Pin Configuration 1 =C Package 2 =A SOD-323 Maximum Ratings Parameter


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    PDF Q62702-B580 OD-323 0S35b05 312045b fl235b05 E35b05 01EQ45fl

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silicon Schottky Diode BAT 15-098 Preliminary Data • DBS mixer application to 10 GHz • Low noise figure • Low barrier type ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration


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    PDF Q62702-A0062 OD-123 EHA07001 EHD07088 fl535bQ5

    S 187 Siemens

    Abstract: marking 535 marking code 535 BB 450
    Text: SIEMENS BB 535 Silicon Variable Capacitance Diode • For U H F and TV/TR tuners • Large capacitance ratio, low series resistance 1 =C Q62702-B580 II Pin Configuration white S Package < Marking Ordering Code BB 535 CM Type SOD-323 Maximum Ratings Parameter


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    PDF Q62702-B580 OD-323 /CT28 S 187 Siemens marking 535 marking code 535 BB 450

    BAT 545

    Abstract: No abstract text available
    Text: SIEMENS Silicon Dual Schottky Diode BAT 15-099 Preliminary Data Features • DBS mixer application to 12 GHz • Low noise figure • Low barrier type ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel


    OCR Scan
    PDF Q62702-A66 P-SOT-143-4-6 EHA0701! BAT 545

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silicon Dual Schottky Diode BAT 15-099 Preliminary Data Features • DBS mixer application to 12 GHz • Low noise figure • Low barrier type ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel


    OCR Scan
    PDF Q62702-A66 P-SOT-143-4-6 EHD07Ã 023SbOS 015Q341