Untitled
Abstract: No abstract text available
Text: 053Sfc.0S 0030337 ê SIEG Selection Guide SIEMENS AKT IENGESELLSCHAF 47E D EMI suppression chokes l-core chokes Rated inductance per winding Rated Type Rated voltage Double current per Single choke winding choke 500 Vac 20 nH to B82504 1 to 25 A 65 |iH to
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053Sfc
B82504
B82524
B82505
B82525
B82506
B82526
B82507
B82527
0S35b05
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Untitled
Abstract: No abstract text available
Text: SIEMENS 256 MBit Synchronous DRAM HYB 39S256400/800/160T Preliminary Information • High Performance: Multiple Burst Read with Single W rite Operation -8 -8B -10 Units 125 100 100 MHz fCK3 8 10 10 ns Data M ask for Read/W rite control fAC3 6 6 7 ns Data M ask for byte control
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39S256400/800/160T
0235b05
39S256400/80Q/160AT
A53SbDS
D1113G0
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m43of
Abstract: TAA 761 siemens Package Outlines P-LCC DATE CODE 3535B aop 741 5MXE siemens lsl siemens 58 295 84 pin intel 80 B209 B-209
Text: SIEMENS ICs for Communications ISDN Echocancellation Circuit IEC-Q PEB 2091 Version 5.3 PEF 2091 Version 5.3 Data Sheet 01.99 DS 2 • flE3ShDS 013751t, b77 B PEB/F 2091 Revision History: Current Version: 01.99 Previous Version: None Page in previous Version
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PEB2091
PEF2091
013751t,
flE35b05
m43of
TAA 761
siemens Package Outlines P-LCC DATE CODE
3535B
aop 741
5MXE
siemens lsl
siemens 58 295 84 pin intel 80
B209
B-209
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NEOSId 2.2k
Abstract: NEOSID 22k
Text: Page 1 FS: 04/93 SIEMENS AG IC-SPECIFICATION TDA 4362 X Differences to the last edition Last Edition: Page 11: Page 12: DOK-Nr. V66047-S1603-C200-G1 date: 11.12.97 #P7: Test values and units changed #P8: Test values and units changed #P11: Test values changed, wrong values in previous version
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V66047-S1603-C200-G1
V66047-S1603-C200-G2
fl23SbD5
NEOSId 2.2k
NEOSID 22k
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Untitled
Abstract: No abstract text available
Text: SIEMENS Enhanced Serial Communication Controller ESCC2 SAB 82532 Preliminary Data 1.1 CMOS 1C General Features S erial Interface • Two independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each
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CRC-32
235b05
82532N-10.
A235b05
00702fl2
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Untitled
Abstract: No abstract text available
Text: • a b a s t o s oo'ia?'^ s t i ■ SIEMENS PRÜFET BTS 442 D2 Smart Highside Power Switch Features • Overload protection • Current limitation • Short-circuit protection • Thermal shutdown * Overvoltage protection including load dump * Fast demagnetization of Inductive loads
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A235L
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Untitled
Abstract: No abstract text available
Text: SIEMENS BB 535 Silicon Variable Capacitance Diode • For UHF and TV/TR tuners • Large capacitance ratio, low series resistance Type BB 535 Marking Ordering Code white S Q62702-B580 , Pin Configuration 1 =C Package 2 =A SOD-323 Maximum Ratings Parameter
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Q62702-B580
OD-323
0S35b05
312045b
fl235b05
E35b05
01EQ45fl
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SQT-89
Abstract: BUZ100SL E3045 Q67040-S4000-A2 smd code book la tube smd diode 27 5j Diode smd 5j
Text: BUZ 100SL Inf ineon technologie» SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage Vfos • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ñ DS on 0.012 a 70 A b 55 V • Logic Level
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100SL
BUZ100SL_
P-TQ220-3-1
Q67040-S4000-A2
BUZ100SL
E3045A
P-TQ263-3-2
Q67040-S4000-A6
E3045
SQT-89
smd code book
la tube
smd diode 27 5j
Diode smd 5j
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Untitled
Abstract: No abstract text available
Text: S IE M E N S BFR 35AP NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2 G H z at collector currents from 0.5mA to 20mA E S P: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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Q62702-F938
OT-23
IS21el2
IS21/S12I
0S35b05
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