suncon 1000uf capacitor
Abstract: No abstract text available
Text: DEMO MANUAL DC2134A LTC4020EUHF High Power Buck-Boost Multi-Chemistry Battery Charger Description Demonstration circuit 2134A is a high power buck-boost multichemistry battery charger featuring the LTC 4020. The board will accept an input voltage between 15V and
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DC2134A
LTC4020EUHF
LTC4020
dc2134af
suncon 1000uf capacitor
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Diode IR 1254
Abstract: GA200TS60U
Text: PD -5.058B PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA200TS60U Ultra-FastTM Speed IGBT Features VCES = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses
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GA200TS60U
Diode IR 1254
GA200TS60U
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cd4541 application
Abstract: ic 4541 cd4541 4541 Timer si4435 2N3906 LT1505 MBRS140 MMSD4148T1 cd4541 timer
Text: advertisement Simple Li-Ion Charge Termination Using the LT1505 Design Note 244 Mark Gurries The LT1505 provides a logic signal output called “FLAG” that is intended to help implement a Li-Ion charge termination mechanism. In the constant voltage portion of the
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LT1505
LT1505
Si4412
MBRS140
MMSD4148T1
2N3906
DC243
cd4541 application
ic 4541
cd4541
4541 Timer
si4435
2N3906
MBRS140
MMSD4148T1
cd4541 timer
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triac tic 2260
Abstract: NATIONAL LINEAR APLICATION VALVO V42310-Z110 B250C1500 B250C1500 B B80C1000 telequarz B80C800 datasheet LT 735
Text: ICs for Communications ISDN Echocancellation Circuit IEC-Q PEB 2091 Version 4.3 User’s Manual 02.95 PEB 2091 V4.3 Revision History: Previous Releases: Page Original Version: 09.94 02.95 Subjects changes since last revision Update including appendix Data Classification
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multicolor led 2-pin
Abstract: la cn5m lcg t67c-s2u2 M67S-N2Q2 Q65110A7237 lcg M67s p2q2 lw p4sg v2ab OSLUX LCB M67S LCB E6SG
Text: Light Emitting Diodes Lumineszenzdioden 13 Light Emitting Diodes . Lumineszenzdioden . 13 Safety Instructions .
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lg led tv electronic diagram
Abstract: LG 631 TV LG lcg M67s p2q2 datasheet light emitting diode Q65110A2431 LYYYG6SF-CADB-35 LCB E6SG LED 5mm 12000 mcd white 2700K LCB M67S LW W5SM
Text: Light Emitting Diodes Lumineszenzdioden 11 Light Emitting Diodes . Lumineszenzdioden . 11 Safety Instructions .
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diamond sx 600
Abstract: Q65110A8176 Q65110A1954 LA E6SF Q65110A8177 LRTBGFTG Q65110A9038 LW QH8G-Q2S2-3K5L-1 Q65110A2395 pointled
Text: Light Emitting Diodes 11 Light Emitting Diodes . 11 Safety Instructions . 13
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LTL-213
Abstract: LTL-233 LTL-223 LTL-253 LTL-293 Diode 224
Text: r. i: E. C r: li, f •'*1 T -l % 5mm SOLID STATE LAMPS m\ LTU(-203 red: .v.".-.-. . * LTL-213 BRIGHT RED LTL223 HIGH EFFICIENCY RED LITE-ON INC 31E D i LTL-233 GREEN LTL-253 YELLOW LTL-293 ORANGE 11 553b3b7 0GG2047 2 I ILTN n r-< 4 \-z \ . FEATURES • LOW POWER CONSUMPTION.
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LTL-213
LTL-223
LTL-233
LTL-253
LTL-293
Diode 224
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Diode LT 213
Abstract: No abstract text available
Text: TAIW AN LIT ON E L E C T R O N I C L I T E W ? 41E D • flöBSb^S O Q O B M b S 43^ « T L I T LTl,-203 RED LTL-233 GREEN LtL-213 BRIGHT RED ; VLTL-223 m m 1FFR3ÏENCY R | ¡ V t W ' Ì P W I ^ -1 ' : r - v m ^ L \ FEATURES • LOW POWER CONSUMPTION. • HIGH EFFIC IE N C Y.
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LTL-233
LtL-213
VLTL-223
Diode LT 213
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m1305 transistor
Abstract: w431 MRF1421C Diode LT 4104 NJT1946A 7082a NJT1949 magnetron 2j42 MSF1422B magnetron 5kw
Text: INTEGRATED CIRCUITS BIPOLAR OPERATIONAL AMPLIFIER TY PE s I N G ¥ D U A L Q u A D H E X D E S C R IP T IO N NJMOP-07 NJM318 NJM741 NJM2107F NJM2130 NJM425# NJM5534 NJM 022 N JM 022B NJM 062 N JM 072B N JM 082B NJM353 NJM1458 NJM2041 NJM2043 NJM2068 NJM2082
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NJMOP-07
NJM318
NJM741
NJM2107F
NJM2130
NJM425#
NJM5534
NJM353
NJM1458
NJM2041
m1305 transistor
w431
MRF1421C
Diode LT 4104
NJT1946A
7082a
NJT1949
magnetron 2j42
MSF1422B
magnetron 5kw
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VA-201
Abstract: teledyne crystalonics VA312 VA-200 VA-202 VA-203 VA-204 VA-205 VA-206 VA-207
Text: TELEDYNE ! m EÛE D COMPONENTS a=ilT b Q e OClQbbUa ? • -T-0“7-/9 H IG H V O L T A G E - H I Q | VARACTRON V O L T A G E -V A R IA B L E C A P A C IT A N C E D IO D E S VA200-213 GEOMETRY 415 • ALL EPITAXIAL C O N S TR U C TIO N P + N N + • 1SO V O LTS DC RATING (M W V )
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-T-07â
VA200-213
100mA
C-200V
VA300
VA301
VA302
VA303
VA304
VA305
VA-201
teledyne crystalonics
VA312
VA-200
VA-202
VA-203
VA-204
VA-205
VA-206
VA-207
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GE-SPCO Statte rower component Malvern
Abstract: ge 142 6rt2 A880 6rt217
Text: S3E D GE-SPCO • 3Ö7MSÖM GGOGIMS ^ 7 ^ « Û E S P A880 Statte row er Component tm eràtion M aívenuPA USA 'V- of-Z.3 77mm RECTIFIER DIODE 4500 V L2900A- The A880 rectifier diode features a nominal 77mm silicon junction diameter design, manufactured by
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367M5AM
V12900
81B\A880PWR
GE-SPCO Statte rower component Malvern
ge 142
6rt2
A880
6rt217
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GDD2074
Abstract: SM04PCN013 westcode diode
Text: UESTCÔD E SEMI CO ND UC TOR S ITE D • GGGSO?! T ■ T'-0 3 - J 7 Technical Publication WESTCODE @ SEMICONDUCTORS DF 13 Issue 1 February 1981 Fast Recovery Stud-Base Diode Type PCN/PCR013 12 amperes average: up to 400 volts V RRM Ratings Maximum values at Tj 150°C unless stated otherwise
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PCN/PCR013
GDD2074
SM04PCN013
westcode diode
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diode LT 1n4007
Abstract: transistor BC337 bc337 transistor Zener diode 9.1 22 pf trimmer 100A1R3BP50 22 pf trimmer capacitor 100A101JP50 3 pin TRIMMER capacitor 1n4007 mttf
Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA TP V 5055B The RF Line UHF Linear Power Transistor 50 W — 470 to 860 MHz UHF LINEAR POWER TRANSISTOR NPN SILICON . . . designed fo r o u tp u t stages in Band IV & V TV tra n s m itte r a m plifiers. Interna! m a tch
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5055B
BC337
BD135
1N4007
100A101JP50
diode LT 1n4007
transistor BC337
bc337 transistor
Zener diode 9.1
22 pf trimmer
100A1R3BP50
22 pf trimmer capacitor
3 pin TRIMMER capacitor
1n4007 mttf
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DM74LS123N
Abstract: DM74LS123 DM74LS123M LS123 M16A N16E
Text: LS123 £ 2 National Semiconductor DM74LS123 Dual Retriggerable One-Shot with Clear and Complementary Outputs General Description The DM74LS123 is a dual retriggerable monostable multivi brator capable of generating output pulses from a few nano seconds to extremely long duration up to 100% duty cycle.
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DM74LS123
AN-336.
DM74LS123N
DM74LS123M
LS123
M16A
N16E
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CQF58
Abstract: 1550 laser diode cd laser diode ingaasp 1550 laser diode
Text: Philips Components _ A D E V E L O P M E N T DATA c q f s s /d _ T h is data sh e e t c on ta in s a dvance inform ation and sp e cifica tio n s w h ic h a re su b je ct to c h a n g e w ith o u t notice. BURIED HETEROJUNCTION InGaAsP LASER DIODE
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CQF58/D
F58/D
BS4803:
BS4803.
lS60nm
CQF58
1550 laser diode
cd laser diode
ingaasp 1550 laser diode
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SSH6N60
Abstract: 250M SSH6N55 MOSFET 600v 60a
Text: N-CHANNEL POWER MOSFETS SSH6N60/55 FEATURES • Lower R d s <on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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SSH6N60/55
SSH6N60
SSH6N55
7clhm42
0Q2R21S
250M
MOSFET 600v 60a
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Untitled
Abstract: No abstract text available
Text: TIL181 OPTOCOUPLER D 2 9 0 6 , OCTOBER 1 9 8 5 -R E V IS E D MARCH 1 98 8 COMPATIBLE W ITH STANDARD TTL INTEGRATED CIRCUITS • Gallium Arsenide Diode Infrared Source Optically Coupled to a Silicon N-P-N Phototransistor • High Direct-Current Transfer Ratio
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TIL181
1501B,
1506B,
1512B,
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS20UM-6 HIGH-SPEED SWITCHING USE FS20UM-6 OUTLINE DRAWING D im e n sio n s in mm « • Vdss . 300V • TDS ON (MAX) Î- G A T E DRAIN 3;.: S O U R C E 4) O R AiN
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FS20UM-6
O-220
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BUZ45A
Abstract: No abstract text available
Text: / = T SG S -TH O M S O N * 7 M m M § [ R I G J Ï Ï O M O BUZ45A ( g S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDss BUZ45A 500 V ^DS(on 0.8 fi •d 8.3 A • HIGH V O LT A G E - FO R OFF-LINE S M P S • U LT R A FAST SW ITCHING FO R O PERATIO N
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BUZ45A
BUZ45A
10OKHz
SC-06M
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CMPZ4686
Abstract: zt 213 CMPZ4678 CMPZ4679 CMPZ4680 CMPZ4681 CMPZ4682 CMPZ4683 CMPZ4684 CMPZ4685
Text: Central CMPZ4678 THRU CMPZ4717 Semiconductor Corp. 350m W LOW LEVEL ZENER DIODE 5% TOLERANCE DESCRIPTION: The C EN TR AL SE M IC O N D U C TO R CMPZ4678 Series Silicon Zener Diode is a high quality voltage regulator designed for applications requiring an extrem ely low
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CMPZ4678
100mA
CMPZ4678*
CMPZ4679*
CMPZ4680*
CMPZ4681Â
CMPZ4682*
CMPZ4683*
CMPZ4684*
CMPZ4685
CMPZ4686
zt 213
CMPZ4679
CMPZ4680
CMPZ4681
CMPZ4682
CMPZ4683
CMPZ4684
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Untitled
Abstract: No abstract text available
Text: AH5009/AH5010/AH5011/AH5012 a National Semiconductor AH5009/AH5010/AH5011/AH5012 Monolithic Analog Current Switches • ■ ■ ■ ■ General Description A versatile family ot monolithic JFET analog switches eco nomically fulfills a wide variety of multiplexing and analog
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AH5009/AH5010/AH5011/AH5012
AH5009/AH5010/AH5011/AH5012
LF13331,
LF13332,
LF13333
AHM11
--WV14
AHS011
AHS011
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Untitled
Abstract: No abstract text available
Text: DFB54 M ITEL Fast Recovery Diode SEMICONDUCTOR DS4219 - 2.4 Supersedes Septem ber 1996 version, DS4219 - 2.3 KEY PARAMETERS v RRM 3500V 2135A Jf AV 20000A FSM 1500|lC Q r APPLICATIONS • Pow er Supplies. ■ Freewheel Diode. ■ Battery C hargers. ■
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DFB54
DS4219
0000A
DFB54
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Diode LT 213
Abstract: semikron thyristor
Text: SEMIKRON V rsm V rrm 420 A SEMIPACK 3 Thyristor/ Diode Modules 250 A SKKT213 SKKT 253 dv/dt cr Itrms (m axim um valu e s fo r continuous operation) 370 A V drm V /jis I 420 A I Itav (sin. 180; 250 A case = 85 °C V V SKKT SKKT 900 800 500 213/08 D 253/08 D
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SKKT213
SKKH213
KT25308B
Diode LT 213
semikron thyristor
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