Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3636 Silicon N-channel power MOSFET Unit: mm 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 For high-speed switching 13.7±0.2 4.2±0.2 Solder Dip • Avalanche energy capacity guaranteed: EAS > 20 mJ
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2002/95/EC)
2SK3636
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K3636
Abstract: 2SK3636
Text: Power MOSFETs 2SK3636 Silicon N-channel power MOSFET Unit: mm 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 For high-speed switching 13.7±0.2 4.2±0.2 Solder Dip • Avalanche energy capacity guaranteed: EAS > 20 mJ • Gate-source surrender voltage VGSS = ±30 V guaranteed
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2SK3636
K3636
2SK3636
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52s marking code transistor
Abstract: 52s marking code 52s marking 2SK3633 SC-65
Text: 2SK3633 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 5.2S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)
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2SK3633
52s marking code transistor
52s marking code
52s marking
2SK3633
SC-65
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2SK3636
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3636 Silicon N-channel power MOSFET Unit: mm 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 For high-speed switching 15.0±0.5 φ 3.2±0.1 M Di ain sc te on na tin nc ue e/ d • Features
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2002/95/EC)
2SK3636
2SK3636
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toshiba a114
Abstract: 2SK3633 SC-65 K3633 200VW
Text: 2SK3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS IV 2SK3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.)
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2SK3633
toshiba a114
2SK3633
SC-65
K3633
200VW
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Untitled
Abstract: No abstract text available
Text: 2SK3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS IV 2SK3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.)
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2SK3633
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2SK3633
Abstract: SC-65
Text: 2SK3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS IV 2SK3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.)
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2SK3633
2SK3633
SC-65
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2SK3633
Abstract: SC-65
Text: 2SK3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS IV 2SK3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.)
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2SK3633
2SK3633
SC-65
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Untitled
Abstract: No abstract text available
Text: 2SK3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type −MOS IV 2SK3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.)
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2SK3633
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Untitled
Abstract: No abstract text available
Text: 2SK3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS IV 2SK3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.)
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2SK3633
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metrahit Multimeter service manual
Abstract: 49a hall sensor Metrawatt METRAPHASE 1 PC Printer Port Controls I-V Curve Tracer GEOHM 3 metrahit 14 service manual PROTECTIVE RELAY CEE MANUFACTURER 1/METRISO 1000v METRACLIP 20
Text: Table of Contents Measuring Instruments GMC-I Messtechnik GmbH GMC-Instruments Nederland B.V. Daggeldersweg 18 NL-3449 JD Woerden Phone: +31 348 42 11 55 Fax: +31 348 42 25 28 E-mail: info@gmc-instruments.nl www.gmc-instruments.nl GMC-Instruments Austria GmbH
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F-91349
CZ-67801
I-20046
E-08940
metrahit Multimeter service manual
49a hall sensor
Metrawatt
METRAPHASE 1
PC Printer Port Controls I-V Curve Tracer
GEOHM 3
metrahit 14 service manual
PROTECTIVE RELAY CEE MANUFACTURER
1/METRISO 1000v
METRACLIP 20
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IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,
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30am-5
44-0-1737-2com
DB8029C
IRF460
SMD TRANSISTOR MARKING k38
smd transistor k38
we 751002 s
SMD-6C
transistor smd k45
RAD-HARD igbt
IRF3504
afl2805s manufactured by international rectifier
550-065
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220v AC voltage stabilizer schematic diagram
Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122
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P390-ND
P465-ND
P466-ND
P467-ND
LNG901CF9
LNG992CFBW
LNG901CFBW
LNG91LCFBW
220v AC voltage stabilizer schematic diagram
BA 49182
RJh 3047
rjh 3047 equivalent
a1458 opto
philips ecg master replacement guide
MOSFET, rjh 3077
sc1097
philips ecg semiconductors master replacement guide
Electronic ballast 40W using 13005 transistor
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diode k363
Abstract: diode A25 AU61 AM3599
Text: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022 v1.0 December 7, 1999 3* Features Advance Product Specification • High-performance Built-in Clock Management Circuitry - Eight fully digital Delay-Locked Loops (DLLs) • Fast, High-density 1.8 V FPGA Family
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DS022
32/64-bit,
66-MHz
diode k363
diode A25
AU61
AM3599
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GSR 10,8
Abstract: DLL5 BG432 ic 404 BB112 equivalent
Text: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022-1 v2.0 April 2, 2001 Preliminary Product Specification Features • • • • • Fast, High-Density 1.8 V FPGA Family - Densities from 58 Kb to 4 Mb system gates - 130 MHz internal performance (four LUT levels)
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DS022-1
32/64-bit,
66-MHz
DS022-1,
DS022-3,
DS022-2,
DS022-4,
DS022-4
GSR 10,8
DLL5
BG432
ic 404
BB112 equivalent
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K2466
Abstract: H1342 AU61
Text: 901592 Virtex -E 1.8 V Field Programmable Gate Arrays R DS022 v1.5 July 10, 2000 3* Features Preliminary Product Specification High-performance Built-in Clock Management Circuitry - Eight fully digital Delay-Locked Loops (DLLs) • Fast, High-density 1.8 V FPGA Family
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DS022
32/64-bit,
66-MHz
F1156
K2466
H1342
AU61
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A21n
Abstract: digital dice design VHDL k41 dob Quadrature Decoder Interface ICs
Text: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022 v1.9 February 12, 2001 Preliminary Product Specification Features • • • • High-Performance Built-In Clock Management Circuitry Densities from 58 Kb to 4 Mb system gates - Eight fully digital Delay-Locked Loops (DLLs)
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DS022
32/64-bit,
66-MHz
FG860
XCV1000E
XCV2000E
XCV400E
XCV600E
A21n
digital dice design VHDL
k41 dob
Quadrature Decoder Interface ICs
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XCV1000E
Abstract: XCV1600E XCV400E XCV600E XCV2000E XCV200E XCV300E XCV50E DS022-1 XCV100E
Text: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022-1 v2.3 July 17, 2002 Production Product Specification Features • • • • • Fast, High-Density 1.8 V FPGA Family - Densities from 58 k to 4 M system gates - 130 MHz internal performance (four LUT levels)
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DS022-1
32/64-bit,
66-MHz
XCV1000E,
1600E,
2000E"
DS022-1,
DS022-2,
DS022-4
DS022-3,
XCV1000E
XCV1600E
XCV400E
XCV600E
XCV2000E
XCV200E
XCV300E
XCV50E
DS022-1
XCV100E
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ao21
Abstract: XCV300E-6PQ240C
Text: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022 v1.6 August 1, 2000 Preliminary Product Specification Features • • • - Densities from 58 k to 4 M system gates - 130 MHz internal performance (four LUT levels) - Designed for low-power operation
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DS022
32/64-bit,
66-MHz
F1156
ao21
XCV300E-6PQ240C
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K363 equivalent
Abstract: n345 AF125 XCV1000E d30122 A281 horizontal driver transistor D155 AY102 j281 pioneer amplifier an214
Text: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022 v1.7 September 20, 2000 Preliminary Product Specification Features • • • • • • Fast, High-Density 1.8 V FPGA Family - Densities from 58 k to 4 M system gates - 130 MHz internal performance (four LUT levels)
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DS022
32/64-bit,
66-MHz
XCV2600E
XCV3200E
XCV100E"
XCV600E"
XCV100E
XCV1000E,
K363 equivalent
n345
AF125
XCV1000E
d30122
A281
horizontal driver transistor D155
AY102
j281
pioneer amplifier an214
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g4aoo
Abstract: XCV1000E CG1156
Text: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022-1 v2.0 April 2, 2001 Preliminary Product Specification Features • • • • • Fast, High-Density 1.8 V FPGA Family - Densities from 58 Kb to 4 Mb system gates - 130 MHz internal performance (four LUT levels)
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DS022-1
32/64-bit,
66-MHz
DS022-1,
DS022-3,
DS022-2,
DS022-4,
DS022-4
g4aoo
XCV1000E
CG1156
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diode T25-4
Abstract: IC AN214 N345 pioneer amplifier an214 XCV1600E ac3 amplifier circuit diagram AN214 amplifier horizontal driver transistor D155 K235 XCV300E-6PQ240C
Text: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022-1 v2.2 November 9, 2001 Preliminary Product Specification Features • • • • • Fast, High-Density 1.8 V FPGA Family - Densities from 58 k to 4 M system gates - 130 MHz internal performance (four LUT levels)
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DS022-1
32/64-bit,
66-MHz
FG1156
XCV3200E
DS022-1,
DS022-2,
DS022-4
DS022-3,
diode T25-4
IC AN214
N345
pioneer amplifier an214
XCV1600E
ac3 amplifier circuit diagram
AN214 amplifier
horizontal driver transistor D155
K235
XCV300E-6PQ240C
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transistor KSP 42
Abstract: KEL5002A PC17L1 KDP6004A ksp 13 replacement KPI-L05 KST-312 PC-17K1 PC-17L1 KPI-261D
Text: Contents Optoelectronic Sensors Contents 08 Detectors 10 Emitters 12 Photo Interrupters 16 Photo Couplers 21 Photo ICs 24 Optic Receiver Modules 26 LEDs 29 Infrared Transceiver Modules lrDA 31 Fiber Optic Devices(FOD) 33 Fiber Optic Transceivers(FOT) 34 Optical Communication Devices
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KHP2032
KOD-1017
KOD-1016
KOD-1086
KOD-1051
KOM-1020
KOM-1021
K0M-5121
transistor KSP 42
KEL5002A
PC17L1
KDP6004A
ksp 13 replacement
KPI-L05
KST-312
PC-17K1
PC-17L1
KPI-261D
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k3639
Abstract: K379 K3793 ECKN
Text: Thte document ti ttw w p m i a Corporation CUSTOMER DRAWING Amphand Corporation and b doltamd on ‘ to b * dlMloNd. rapreduood or uMd, In ar M l* bv anyofi* ottitr than Amphenol ngM I* granted to alodooo 4,60+0,04 1 "1 C? Iu REV ISIO N S SYM ECKN DESCRIPTION
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K3639
K3793
BBF16002N
BBF16002N
K379
ECKN
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