Untitled
Abstract: No abstract text available
Text: FDD850N10LD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 15.3 A, 75 m Features Description • RDS(on) = 61 m ( Typ.)@ VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching
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FDD850N10LD
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Untitled
Abstract: No abstract text available
Text: FDD1600N10ALZD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 6.8 A, 160 m Features Description • RDS(on) = 124 m ( Typ.)@ VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching
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FDD1600N10ALZD
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diode jc 5l
Abstract: SOT-89-5L zener diode sot89
Text: SOT89-5L Not Recommended for New Design AH287 HIGH VOLTAGE HALL-EFFECT SMART FAN MOTOR CONTROLLER General Description Features • • • • • • • AH287 is a monolithic fan motor controller with Hall sensor’s capability. It contains two complementary open-drain drivers for
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OT89-5L
AH287
400mA
OT89-5L
AH287
diode jc 5l
SOT-89-5L
zener diode sot89
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SKM150GB123D
Abstract: skm150gal123d
Text: SKM 150GB123D 3 4 /5 6* # Absolute Maximum Ratings Symbol Conditions IGBT Values 38 4 /5 6* *7 &* ./00 38 4 .50 6* &*; 3 4 /5 6* .50 + 3 4 :0 6* .0 + /00 + &*;4/%&* = /0 <7 SEMITRANS 3 IGBT Modules .0 A 3 4 /5 6*
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150GB123D
150GAL123D
SKM150GB123D
skm150gal123d
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skm150gb123d
Abstract: No abstract text available
Text: SKM 150GB123D 3 4 /5 6* # Absolute Maximum Ratings Symbol Conditions IGBT Values 38 4 /5 6* *7 &* ./00 38 4 .50 6* &*; 3 4 /5 6* .50 + 3 4 :0 6* .0 + /00 + &*;4/%&* = /0 <7 SEMITRANS 3 IGBT Modules .0 A 3 4 /5 6*
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150GB123D
150GAL123D
skm150gb123d
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SKM150GB123D
Abstract: skm150gal123d SEMIKRON
Text: SKM 150GB123D 3 4 /5 6* # Absolute Maximum Ratings Symbol Conditions IGBT Values 38 4 /5 6* *7 &* ./00 38 4 .50 6* &*; 3 4 /5 6* .50 + 3 4 :0 6* .0 + /00 + &*;4/%&* = /0 <7 SEMITRANS 3 IGBT Modules .0 A 3 4 /5 6*
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150GB123D
150GAL123D
SKM150GB123D
skm150gal123d
SEMIKRON
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Untitled
Abstract: No abstract text available
Text: FastRecover yDi ode T wi n OUTLI NE SF5LC40UM Uni tmm Package FTO220AG 400V5A 10 ロット記号 （例） Date code 4.5 管理番号 （例） Control No. 極性 Polarity Feat ur e 15 品名略号 Type No. S0000 5LC40UM 13.5 Hi ghVol t age Hi ghRecov er ySpeed
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S0000
5LC40UM
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KA5M0765RC
Abstract: No abstract text available
Text: Preliminary KA5M0765RC S P S S P S TO -22 0F -5L The SPS product family is specially designed for an off-line SMPS with minimal external components. The SPS consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed frequency
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KA5M0765RC
KA5M0765RC
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4606 MOSFET INVERTER
Abstract: SMD MOSFET DRIVE DATASHEET 4606 mosfet cross reference inverter 4606 A12A 4606 inverter ic eltek flatpack LED DRIVER ana 618 uc3843 inverter circuit 4606 inverter KA3843
Text: Shortform Catalog February 2001 http://www.micrel.com/ Micrel Semiconductor • 1849 Fortune Drive • San Jose, CA 95131 • USA • +1 408 944-0800 • +1 408 944-0970 Micrel Shortform Catalog February 2001 2001 Micrel, Inc. The information furnished by Micrel, Inc., in this publication is believed to be accurate and reliable. However, no responsibility is assumed by Micrel for its use, nor any
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MBR20
Abstract: MARKING CODE diode sod123 AB
Text: WILLAS FM120-M+ THRU T MBR20150C FM1200-M+ 20.0A SCHOTTKY BARRIER RECTIFIERS 150V 1.0A SURFACE MOUNT SCHOTTKY BARRIER PACKAGE RECTIFIERS -20V- 200V TO-220AB Pb Free Product SOD-123+ PACKAGE Package outline Features Features better reverse leakage current and thermal resistance.
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O-220
OD-123+
FM120-M+
0150CT
FM1200-M
FM120-MH
FM130-MH
FM140-MH
FM150-MH
FM160-MH
MBR20
MARKING CODE diode sod123 AB
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SMD DIODE zener SOT89
Abstract: smd hall code 05 sot89 zener smd marking 352 diode SOT89 smd marking B SMD DIODE zener SOT89 code 10 SMD DIODE SOT89 5L smd marking D3 SOT89
Text: AH284 HALL-EFFECT SMART FAN MOTOR CONTROLLER General Description Features • • • • • • • • On Chip Hall Sensor Rotor-Locked Shutdown Automatically Restart Built-in Zener Protection for Output Driver Operating Voltage: 3.8V~20 V Output Current: IO AVE = 500mA for SIP-4L/SOT89-5L
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AH284
500mA
SIP-4L/SOT89-5L
OT89-5L
AH284
SMD DIODE zener SOT89
smd hall code 05 sot89
zener smd marking 352
diode SOT89 smd marking B
SMD DIODE zener SOT89 code 10
SMD DIODE SOT89 5L
smd marking D3 SOT89
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6 PIN smd diode marking JC
Abstract: zener smd marking 352 SMD DIODE zener SOT89 c3 sot89
Text: AH284 HALL-EFFECT SMART FAN MOTOR CONTROLLER General Description Features • • • • • • • • On Chip Hall Sensor Rotor-Locked Shutdown Automatically Restart Built-in Zener Protection for Output Driver Operating Voltage: 3.8V~20 V Output Current: IO AVE = 500mA for SIP-4L/SOT89-5L
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AH284
500mA
SIP-4L/SOT89-5L
OT89-5L
AH284
6 PIN smd diode marking JC
zener smd marking 352
SMD DIODE zener SOT89
c3 sot89
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Untitled
Abstract: No abstract text available
Text: AH284 HALL-EFFECT SMART FAN MOTOR CONTROLLER General Description Features • • • • • • • • • On Chip Hall Sensor Rotor-Locked Shutdown Automatically Restart Built-in Zener Protection for Output Driver Operating Voltage: 3.8V~20 V Output Current: IO AVE = 500mA for SIP-4L/SOT89-5L
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AH284
500mA
SIP-4L/SOT89-5L
OT89-5L
AH284
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DIIJ4
Abstract: UM 9515 IR 9515
Text: E S J C 0 7 9kV, 12kV I Outline Drawings k _ HIGH VOLTAGE SILICON DIODE E S JC 0 7 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a multilayed mesa type silicon chip by epoxy resin. : Features
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ESJC07-12B
ESJC07-09B
I95t/R89)
DIIJ4
UM 9515
IR 9515
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b72 zener
Abstract: Transistor DF- Rt M115 diode Lz 5n zener DI400MIM-050 MSX50 C 125t Zener diode
Text: 1DI400MN-050 400A e±,(„ 5l-, '•Outline Drawings '< * 7 - h POWER TRANSISTOR MODULE ■ fë JI : Features • hFEÄ'^l' • • High DC Current Gain KrtflK ■ fflji! : Applications • >'< —9 General Purpose Inverter • Uninterruptible Power Supply
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DI400MIM-050
25-35kfi-cm
E82988
b72 zener
Transistor DF- Rt
M115
diode Lz 5n zener
MSX50
C 125t Zener diode
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5lc2
Abstract: diode 5LC2 5LC2 U
Text: Super Fast Recovery Diode Twin Diode • ftfflS I OUTLINE Package I E-pack DE5LC20U Unit ; mm Weight 0.326g Typ W •M 200V 5A ®@ ® Feature 6.6 • SM D • SM D •e y -rx • Low Noise • trr=35ns • trr=35ns 5LC2 Date codc Main Use • Sw itching Regulator
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DE5LC20U
20/im
aveli50H
5lc2
diode 5LC2
5LC2 U
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Untitled
Abstract: No abstract text available
Text: 1DI400MN-050 400A e±,(„ 5l-, '• Outline Drawings POWER TRANSISTOR MODULE ■ S J I : Features • h F E ^'^V ' High DC C urre n t Gain • KrtJ •z m n m m t \ : A pplications >'< — 9 • d General Purpose Inverter • U n in te rru p tib le P ow er S u pp ly
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1DI400MN-050
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b72 zener
Abstract: ZENER MIO N41I 30S3 M115 T151
Text: 1DI400MN-050 400A e±,(„ 5l-, '•Outline Drawings POWER TRANSISTOR MODULE ■ S J I : Features • hFE^'^V' High DC Current Gain • K rtJ •zm nm m t \ : Applications >'<— 9 • d General Purpose Inverter • Uninterruptible Power Supply • N C If P i& M
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DI400MIM-050
E82988
l95t/R89
Shl50
b72 zener
ZENER MIO
N41I
30S3
M115
T151
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Untitled
Abstract: No abstract text available
Text: Ordering number: ENN6564 P-Channel Silicon MOSFET 5LP02N Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2178 Features •Low ON-resistance. ■Ultrahigh-speed switching. • 2.5V drive. Specifications Absolute Maximum Ratings at Ta = 25 C
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ENN6564
5LP02N
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12N08l
Abstract: 2n08 MTP12N10L B 773 transistor 70220AB YLE relay 221A-04 AN569 MTP12N08L yi73
Text: JUL li JU L 12 ’ 0 0 14=10 FR S P C TECHNOLOGY y : bH HM HK H H X ’- S L K U 1 C E 7 7 3 9 0 7 5 1 8 0 TO 9 0 1 1 4 4 1 1 3 2 7 9 4 4 4 9 P . 0 2 / 0 8 CEN TER2 244 7011 TO P . 02 9 l?33 0?5l80 O rd er th is MOTOROLA b y SEMICONDUCTOR m m d av a s h e e t
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221A04
70-220AB
MTP12Nfi
12N08l
2n08
MTP12N10L
B 773 transistor
70220AB
YLE relay
221A-04
AN569
MTP12N08L
yi73
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Untitled
Abstract: No abstract text available
Text: 6M B I1 5LS-060 15A IG B T ^ e ^ zl— IG B T M O D U L E : Features • High Speed Switching • Low Saturation Voltage. • iiiA ^ )yir—h ffiK (M O S ¥ —h ftia ) High Input Impedance Moudule Packaging : Applications 9 • General Purpose Inverter •
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5LS-060
1995-9095t/R69
Shl50
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Untitled
Abstract: No abstract text available
Text: □ - □ 3 . Super Fast Recovery Diode Twin Diode OUTLINE DIMENSIONS D5LC40 400V 5A HSS'iX > trr50n s >SRS;H >^BsOAw0, ^ m iB s FA RATINGS Absolute Maximum Ratings a a i s E -fS y m b o l C o n d it io n s It e m Storage Temperature Operating Junction Temperature
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D5LC40
trr50n
50HziE5K
J515-5
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2DI75D-050A
Abstract: DIODE B93 B-93 H125 M208 gip transistor b93 diode YSTT
Text: 2DI75D-050A 75a /<7- -)V POWER TRANSISTOR MODULE i F e a tu re s • 7 'J — • h F E ^ ftt' •m m X — KF*3W Including Free Wheeling Diode High DC Current Gain Insulated Type If f liÉ : A p p lic a t io n s • High Power Switching • AC i AC Motor Controls
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2DI75D-050A
E82988
DIODE B93
B-93
H125
M208
gip transistor
b93 diode
YSTT
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5l60
Abstract: No abstract text available
Text: n - n x V 'C X -Y - Super Fast Recovery Diode Single Diode O UTLINE D IM E N S IO N S D5L60 600V 5A • h iîj ï • t r r 50ns m m •P F C •SR S ÎÜ • 7 5 -rjn - f - j u •T V + B s RATINGS Absolute Maximum Ratings a i 5 E-fSymbol Conditions a Item
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D5L60
50HziE5g
50HzjE
J515-5
5l60
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