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    DIODE H5E Search Results

    DIODE H5E Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE H5E Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HT 1000-4 power amplifier

    Abstract: triac tag 8739 H48 zener diode TRIAC TAG 8812 Zener diode H48 h48 diode zener loctite 5145 RF MODULE CIRCUIT DIAGRAM z 10 cd harris transistor f6 13003 OM370
    Text: TECHNICAL MANUAL SigmaPLUS IOT Transmitters I Introduction II Installation & Checkout III Operation IV Theory of Operation V Maintenance & Alignments VI Troubleshooting VII Parts List VIII Subsections T.M. No. 888-2430-001 Copyright HARRIS CORPORATION


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    75WATT HT 1000-4 power amplifier triac tag 8739 H48 zener diode TRIAC TAG 8812 Zener diode H48 h48 diode zener loctite 5145 RF MODULE CIRCUIT DIAGRAM z 10 cd harris transistor f6 13003 OM370 PDF

    contactor

    Abstract: No abstract text available
    Text: Extract from the online catalog ELR H5-ES-SC- 24DC/500AC-2 Order No.: 2900559 The figure shows the 9 A version "3 in 1" hybrid motor starter for reversing 3~ AC motors up to 550 V AC, with 24 V DC input, 2.4 A output current, and emergency stop function.


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    24DC/500AC-2 SCP-24DC. contactor PDF

    relay cross reference

    Abstract: No abstract text available
    Text: Extract from the online catalog ELR H5-ES-SC- 24DC/500AC-0,6 Order No.: 2900558 The figure shows the 9 A version "3 in 1" hybrid motor starter for reversing 3~ AC motors up to 550 V AC, with 24 V DC input, 0.6 A output current, and emergency stop


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    24DC/500AC-0 SCP-24DC. relay cross reference PDF

    Untitled

    Abstract: No abstract text available
    Text: Extract from the online catalog ELR H5-ES-SC- 24DC/500AC-0,6 Order No.: 2900558 The figure shows the 9 A version "3 in 1" hybrid motor starter for reversing 3~ AC motors up to 550


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    24DC/500AC-0 SCP-24DC. PDF

    Untitled

    Abstract: No abstract text available
    Text: Extract from the online catalog ELR H5-ES-SC- 24DC/500AC-2 Order No.: 2900559 The figure shows the 9 A version "3 in 1" hybrid motor starter for reversing 3~ AC motors up to 550 V AC, with 24 V DC input, 2.4 A output current, and emergency stop


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    24DC/500AC-2 SCP-24DC. 24DC/500AC-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: Extract from the online catalog ELR H5-ES-SC- 24DC/500AC-9 Order No.: 2900561 "3 in 1" hybrid motor starter for reversing 3~ AC motors up to 550 V AC, with 24 V DC input, 9 A output current, and emergency stop


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    24DC/500AC-9 SCP-24DC. 24DC/500AC-9 PDF

    R61509V

    Abstract: S695 diode
    Text: Target Spec R61509V 260k-color, 240RGB x 432-dot graphics liquid crystal controller driver for Amorphous-Silicon TFT Panel REJxxxxxxx-xxxx Rev.0.11 April 25, 2008 Description . 6


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    R61509V 260k-color, 240RGB 432-dot R61509 R61509V. R61509V S695 diode PDF

    CNX48

    Abstract: transistor 115 25e diode h5e CNX48U SOT-90B 4t85 CNX48 U
    Text: I 1 N AUER PHILIPS/DISCRETE SSE D • bbS3T31 GOSOTÖB 1 ■ CNX48 OPTOCOUPLER Opto-isalator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor with accessible base. Plastic 6-lead dual-in line DI L envelope. Features


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    bbS3T31 CNX48 CNX48U. 7Z88208 CNX48 transistor 115 25e diode h5e CNX48U SOT-90B 4t85 CNX48 U PDF

    BVJ 47

    Abstract: No abstract text available
    Text: ISOCOM COMPONENTS LTD H5E I> • Mêab51D 00DD5SÖ 1 » I S O 7 | C N Y 75AX, CNY 75BX, CNY 75CX ll‘!“1’^ " 1*,!Ì -li 'rii':'' i!t'i! lil!''i"‘!‘ '“‘ j ^ ^ I #“ u !•'-=v w “i i ^ ^ 1Hi I’/ ' ¡ . ^ M r ^ i 1 '*-■ £i i - w ^ s f r & v ' V - r ,1. -t ft n ;* ‘M


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    ab51D 00DD5SÃ CNY75AX CNY75CX BVJ 47 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA D I S C R E T E / O P T O H5E D • TOSHIBA FIELD EFFECT TRANSISTOR TOTTSSD OOlV^bt 5 «TOSM - YTFP150 SILICON N CHANNEL MOS TYPE (ir - MOSI) IP s -_ 1, INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.


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    YTFP150 045fl 250pA lD-250uA PDF

    Untitled

    Abstract: No abstract text available
    Text: H5E D N AUER PHILIPS/DISCRETE • bb53^31 QQHObOS 2 P o w e rM O S tra n s is to r Logic Level F E T G E N E R A L D E S C R IP T IO N N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in


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    552-50B BUK552 tbS3T31 Q02Qb0T 52-50A PDF

    Untitled

    Abstract: No abstract text available
    Text: 25E D N AUER PHI LIP S/DISCRETE • 1^53=131 0023573 3 ■ BYV34 SERIES T 1 0 3 - /9 ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times and soft-recovery characteristic.- They are intended for


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    BYV34 Q025Sfll bbS3131 0Q525fl2 T-03-19 PDF

    IRFZ48

    Abstract: irfz48 n mosfet
    Text: 4ÔS54S2 Q D l S a m International k? r Rectifier 3b5 PD-9.758 IIN R IRFZ48 INTERNATIONAL RECTIFIER HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Ultra-Low On-Resistance Very Low Thermal Resistance 175°C Operating Temperature Fast Switching


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    S54S2 IRFZ48 O-220 4A5545E IRFZ48 irfz48 n mosfet PDF

    BUK657

    Abstract: BUK657-600A BUK657-600B BUK657-600C T0220AB tg 25 600b
    Text: N AMER P H I L I P S / D I S C R E T E 2SE D • 1^53=131 G O S O T I S 1 ■ P o w erM O S tra n s is to r Fast R eco very D io de F E T B U K 657-600A B U K 657-600B B U K 657-600C •1- _ o a ~ j 5 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode


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    BUK657-600A BUK657-600B BUK657-600C BUK657 -600A -600B -600C 1E-01 1E-02 1E-03 T0220AB tg 25 600b PDF

    Untitled

    Abstract: No abstract text available
    Text: International K9R Rectifier HEXFET Power M OSF ET • • • • • • • m 4055452 0015026 bTE" INR pd-9-3801 IRFD1Z0 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable 175°C Operating Temperature


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    d9-81 554S2 PDF

    Untitled

    Abstract: No abstract text available
    Text: International ioR Rectifier 4ÔS5452 0 0 1 S 3 flô PD-9.753 IRFIZ44G INTERNATIONAL R E C T I F I E R HEXFET Power MOSFET • • • • • • I NR Û1T Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm 175°C Operating Temperature


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    S5452 IRFIZ44G PDF

    Untitled

    Abstract: No abstract text available
    Text: T ^ 5 - Ì 7 PUBLICATION D/234 PRELIMINARY INFORMATION PIN FUNCTIONS 1 Data change PIN CONFIGURATON 15 D10 28 lead Dual-in-Line 2 Power up reset 16 D11 3 Vss 17 D12 4 Alert reset 18 D13 5 Decode abort 19 Group digit ’O ’ 6 Preamble mode 20 All-call inh.


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    D/234 23kHz FX-103 PDF

    philips bfq

    Abstract: 1B05 1B-05 BUK437-500B
    Text: P HI L IP S I N T E R N A T I O N A L fc.SE D • 711E fl2b D O I ^ S l Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    711QflEb BUK437-500B philips bfq 1B05 1B-05 PDF

    transistor IC BT 134

    Abstract: No abstract text available
    Text: 2SE D N AMER PHILIPS / D I S CR E T E bt.53131 005D3bS fl P o w e rM O S tra n s is to r B U K 444-450B T N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies


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    005D3bS 444-450B hbS3T31 transistor IC BT 134 PDF

    DCM03

    Abstract: 74ALVT162244
    Text: Philips Semiconductors Preliminary specification 2.5V/3.3V ALVT 16-bit buffer/driver with 3 0 il termination resistors 3-State wT1fioodd FEATURES * No bus current loading when output is tied to 5V bus • 16-bit bus interface * Latch-up protection exceeds 500mA per JEDEC Std 17


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    16-bit 12mA/-12mA 500mA JEMO-118AA 711002b 74ALVT162244 TSSOP48: OT362-1 DCM03 74ALVT162244 PDF

    PHILIPS BDX65

    Abstract: BDX65 PHILIPS BDX64
    Text: N AMER PHILIPS/DISCRETE b b S a ^ l 0011=177 1 • BDX65; 65A BDX65B; 65C ESE D T - 3 3 - 2 7 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope. P-N-P complements are BDX64, BDX64A,


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    BDX65; BDX65B; BDX64, BDX64A, BDX64B BDX64C. BDX65 bb53T31 PHILIPS BDX65 BDX65 PHILIPS BDX64 PDF

    diode h5e

    Abstract: MB2652 MB2652BB
    Text: NAPC/PHILIPS □SE SEMICOND D • b b S a ^M 0D ôbSb4 2D 4 « S IC 3 Product specification Philips Semiconductors Advanced BiCMOS Products Dual octal transceivers/registers, non-inverting (3-State FEATURES MB2652 The MB2652 transceiver/register consists of


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    MB2652 64mA/-32mA 500mA MB2652 bb53TE4 b57fl diode h5e MB2652BB PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ii bbS3131 0Q22bTl 1 • BYV121 SERIES 2SE D J v. T -0 3 - / 9 SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage, platinum-barrier rectifier diodes in metal envelopes, featuring low forward voltage drop, low capacitance, absence o f stored charge and high temperature stability. They are intended fo r use in


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    bbS3131 0Q22bTl BYV121 BYV121â T-03-19 bbS3T31 PDF

    Untitled

    Abstract: No abstract text available
    Text: SSE D • bh53T31 002S2fll 1 ■ I N AMER PH IL IPS /DISCR ETE J BR220 SERIES V 1 ^ -2 S '- o s ' DUAL BREAKOVER DIODES The BR220 is a range of monolithic diffusion-isolated glass-passivated dual bidirectional breakover diodes in the TO-220AB outline, available in a +/— 12% tolerance series o f nominal breakover voltage.


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    bh53T31 002S2fll BR220 O-220AB 00aaEcU T-25-05 PDF