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    DIODE GP30 Search Results

    DIODE GP30 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE GP30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GP-30DL

    Abstract: 30DL
    Text: ZOWIE Low VF Rectifier Diode GP30DLH THRU GP30MLH Low VF Rectifier Diode VF < 0.90V @IF = 3A FEATURES IFSM = 140Amp Halogen-free type GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead free product, compliance to RoHS


    Original     		PDF GP30DLH GP30MLH 140Amp DO-201AD DO-201AD MIL-STD-750, 300uS GP-30DL 30DL

    Untitled

    Abstract: No abstract text available
    Text: ZOWIE Low VF Rectifier Diode GP30DLH THRU GP30MLH Low VF Rectifier Diode VF < 0.90V @IF = 3A FEATURES IFSM = 140Amp Halogen-free type GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Compliance to RoHS product Low forward voltage drop


    Original     		PDF GP30DLH GP30MLH 140Amp DO-201AD DO-201AD MIL-STD-750, 300uS

    GP-30DL

    Abstract: GP30DL GP30ML
    Text: ZOWIE Low VF Rectifier Diode GP30DL THRU GP30ML Low VF Rectifier Diode VF < 0.90V @IF = 3A IFSM = 140Amp FEATURES GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead free product, compliance to RoHS Low forward voltage drop


    Original     		PDF GP30DL GP30ML 140Amp DO-201AD DO-201AD MIL-STD-750, 300uS GP-30DL GP30ML

    GP-30DL

    Abstract: GP30D GP30DL
    Text: ZOWIE Low VF Rectifier Diode GP30DL THRU GP30JL Low VF Rectifier Diode OUTLINE DIMENSIONS Case : DO-201AD 8.35 ± 1.15 5.05 ± 0.25 DIA. APPLICATION * General purpose rectification * Surge absorption 1.25 ± 0.05 DIA. MECHANICAL DATA Unit : mm 25.4 MIN. GPRC Glass passivated rectifier chip inside


    Original     		PDF GP30DL GP30JL DO-201AD DO-201AD MIL-STD-75 300uS GP-30DL GP30D

    GP30DL

    Abstract: GP30GL GP30JL GP30KL GP30ML GP-30DL
    Text: ZOWIE Low VF Rectifier Diode GP30DL THRU GP30ML Low VF Rectifier Diode VF < 0.90V @IF = 3A IFSM = 140Amp FEATURES GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Compliance to RoHS product Low forward voltage drop o 3.0 Ampere operation at TA=55 C with no thermal runaway


    Original     		PDF GP30DL GP30ML 140Amp DO-201AD DO-201AD MIL-STD-750, 300uS GP30GL GP30JL GP30KL GP30ML GP-30DL

    PV-Module

    Abstract: No abstract text available
    Text: PV-Module Table of Contents Concentrators, Bypass Diode. 3 Crystalline, Junction Box. 4


    Original     		PDF 1N5408 GP30M DO-201AD P600M O-277A PV-Module

    Untitled

    Abstract: No abstract text available
    Text: VS-GP300TD60S www.vishay.com Vishay Semiconductors Dual INT-A-PAK Low Profile “Half Bridge” Trench PT IGBT , 300 A Proprietary Vishay IGBT Silicon “L Series” FEATURES • Trench PT IGBT technology • Low VCE(on) • Square RBSOA • HEXFRED antiparallel diode with ultrasoft reverse


    Original     		PDF VS-GP300TD60S 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    GP30H

    Abstract: STGP30H60DF
    Text: STGB30H60DF STGP30H60DF 30 A, 600 V field stop trench gate IGBT with Ultrafast diode Target specification Features • Very high speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time


    Original     		PDF STGB30H60DF STGP30H60DF O-220 GP30H STGP30H60DF

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original     		PDF MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent

    PK MUR 460

    Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
    Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


    Original     		PDF MBR340 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 PK MUR 460 pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    cp4071

    Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		PDF 68B09 SN74ALS04BN SN74ALS08N SN74ALS00AN CA3046 uA733 LM311P LM318 CA3094 78H05 cp4071 data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    Untitled

    Abstract: No abstract text available
    Text: JULY 1996 GP300LSS16S ADVANCE ENGINEERING DATA DS4136-5.2 GP300LSS16S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1600V VCES 3.3V VCE sat 300A IC(CONT) 600A IC(PK) 270ns tr 590ns tf • High Power Switching. ■ Motor Control. ■ UPS.


    Original     		PDF GP300LSS16S DS4136-5 270ns 590ns

    Untitled

    Abstract: No abstract text available
    Text: GP30A, GP30B, GP30D, GP30G, GP30J, GP30K, GP30M www.vishay.com Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES SUPERECTIFIER • Superectifier condition structure for high reliability • Cavity-free glass-passivated junction


    Original     		PDF GP30A, GP30B, GP30D, GP30G, GP30J, GP30K, GP30M 22-B106 DO-201AD AEC-Q101

    by250 diode

    Abstract: diode RGP30 ultraFast Recovery Bridge Rectifier zener alternator rectifier zy zener rgp10 Diode rgp10 BA150 DIODES BY250 BY250
    Text: End Applications AUTOMOTIVE END APPLICATION ALTERNATOR POWER STEERING AIR BAG IF 3A 3A 1A 5KW INSTRUMENT PANEL 1A DASHBOARD 1.5A 3A 1.3W, 2W 1.5KW, 5KW ABS SYSTEM 1A 1A, 1.5A 1.3W, 2W 400W÷ 5KW ANTI THEFT DEVICES 1A 1.3W, 2W 400W LIGHT CONTROL 1.3W ENGINE CONTROL


    Original     		PDF BY250, 1N5400, 1N5620GP 1N4000GP, 1N5390, BZX85C, MR2520 EGP10, by250 diode diode RGP30 ultraFast Recovery Bridge Rectifier zener alternator rectifier zy zener rgp10 Diode rgp10 BA150 DIODES BY250 BY250

    p30b diode

    Abstract: GP30AG GP20AG GP10A diode
    Text: GLASS PASSIVATED AXIAL LEAD SILICON SUPER DIODE PIV Peak inverse V o lta ge typ e M AX AVG R e c tifie d C urre n t H alfW a ve Res. Load 60Hz - Ï - - 10 '"TA VPK A AV ¡MAX FW D Peak| M A X R everse S urge C urre n t C urre n t 1 ' 60H Z «< PIV V o lta g e


    OCR Scan     		PDF DO-41 1N4001GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP GP10A GP10B p30b diode GP30AG GP20AG GP10A diode

    fagor fbu4 bridge rectifier

    Abstract: diode zener 600v 1a ZENER DIODE 5K diode bridge 2A 3ZX35C Zener Diode 3A zener diode 5A RGP10 diode RGP30 Diode bridge 600V 0.8A
    Text: FA G O R^ End Applications AUTOMOTIVE END APPLICATION If DEVICES USED DEVICE TYPE ALTERNATOR 3A B Y250,1N 5400, 1N5620GP G eneral Purpose Rectifier POWER STEERING 3A GP30 AM BAG 1A 1N4000GP, ESI 5KP Transient V oltage Suppressor INSTRUMENT PANEL 5KW 1A GP10, FS1


    OCR Scan     		PDF 1N5620GP 1N4000GP, 1N53S0, 1N5400, BZX85C 5390G BY39G, C1500R, 3ZX35C, fagor fbu4 bridge rectifier diode zener 600v 1a ZENER DIODE 5K diode bridge 2A 3ZX35C Zener Diode 3A zener diode 5A RGP10 diode RGP30 Diode bridge 600V 0.8A

    Untitled

    Abstract: No abstract text available
    Text: P^pi G£C PLESSEY S E M I C O N D U C T O R S DS4136-5.2 GP300LSS16S POWERLINE N-CHANNELIGBT MODULE TYPICAL KEY PARAMETERS 1600V VCES 3.3V VCE sat 300A ^CfCONT) 600A ^C(PK) 270ns tr 590ns t. APPLICATIONS • High Power Switching. ■ Motor Control. ■ UPS.


    OCR Scan     		PDF DS4136-5 GP300LSS16S 270ns 590ns 44lbs 70lbs 88lbs 18lbs 1500g

    Untitled

    Abstract: No abstract text available
    Text: GP300LSS16S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes July 1996 version, DS4136 - 5.2 DS4136 - 5.3 March 1998 TYPICAL KEY PARAMETERS 1600V 'c E sat, 3.3V 'q c o N T , 300A 'c (PK, 600A 270ns 590ns APPLICATIONS • High Pow er Sw itching.


    OCR Scan     		PDF GP300LSS16S DS4136 270ns 590ns

    FAG 28 diode

    Abstract: gp300lss INPUT/FAG 28 diode AN4504 FAG 50 diode
    Text: GP300LSS16S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes July 1996 version, DS4136 - 5.2 DS4136 -5 .3 March 1998 TYPICAL KEY PARAMETERS 1600V ' c E sa„ 3.3V *C(CONT 300A 'c p k , 600A tr 270ns t. 590ns APPLICATIONS • High Power Switching.


    OCR Scan     		PDF GP300LSS16S DS4136 270ns 590ns FAG 28 diode gp300lss INPUT/FAG 28 diode AN4504 FAG 50 diode