PJ2301
Abstract: No abstract text available
Text: PJ2301 20V P-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@-4.5V,ID@-2.2A=105mΩ 0.120(3.04) • Advanced Trench Process Technology 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC converters
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PJ2301
2002/95/EC
OT-23
MIL-STD-750
2011-REV
PJ2301
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PJ2301
Abstract: No abstract text available
Text: PJ2301 20V P-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@-4.5V,ID@-2.2A=105mΩ 0.120(3.04) • Advanced Trench Process Technology 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC converters
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PJ2301
2002/95/EC
OT-23
MIL-STD-750
2011-REV
PJ2301
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PDF
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PJ230
Abstract: No abstract text available
Text: PJ2301 20V P-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@-4.5V,ID@-2.2A=105mΩ 0.120(3.04) • Advanced Trench Process Technology 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC converters
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PJ2301
DVH6273DFNDJH
2011-REV
RB500V-40
PJ230
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PDF
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PJ2301
Abstract: No abstract text available
Text: PJ2301 20V P-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@-1.8V,ID@-1.5A=200mΩ • RDS(ON), VGS@-4.5V,ID@-2.2A=105mΩ • Advanced Trench Process Technology 0.120(3.04) 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC converters
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PJ2301
DVH6273DFNDJH
2011-REV
PJ2301
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BSM200GA170DLC
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GA 170 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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BSM200GA170DLC
BSM200GA170DLC
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BSM200GA170DLC
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GA 170 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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BSM200GA170DLC
Abstract: diode 2300A diode bzw 06 26
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GA 170 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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diode bym
Abstract: DIODE ga 105 C67076-A2508-A67 A2706 a2708 GAL 700 a2108 a2702 a2902 C67076-A2515-A67
Text: Typenübersicht, Bestellnummern Selection Guide, Ordering Codes Type Vce Ic Rthjc Ptot Vcesat Page V A K/W W V BSM 10 GD 60 DN 2 600 6 x 10 ≤ 3.5 35 2.1 77 BSM 15 GD 60 DN 2 600 6 x 15 ≤ 2.9 50 2.1 86 BSM 20 GD 60 DN 2 600 6 x 20 ≤ 1.6 90 2.1 95 BSM 20 GD 60 DN 2 E3224
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E3224
E3226
E3166
C67070-A2300-A70
C67076-A2010-A70
C67076-A2011-A70
C67076-A2012-A70
C67076-A2013-A70
diode bym
DIODE ga 105
C67076-A2508-A67
A2706
a2708
GAL 700
a2108
a2702
a2902
C67076-A2515-A67
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BSM200GA170DLC
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GA 170 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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skm 152 ga 123
Abstract: semikron skm 152 ga 123 SKM 75 GAL 123 IGBT skm 50 gb 101 d skm 152 ga SKM 200 GB 102 D semikron skm 152 ga skm 50 gb 100 d skm 100 gb 101 d skm 22 gal 123
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Diodes IF= – IC IFM= – ICM IFSM I2t Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040
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SKM 300 CIRCUIT
Abstract: SKM 300 GA 102 D
Text: Absolute Maximum Ratings Symbol Values Conditions 1 Units AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1200 1200 400 / 300 800 / 600 ± 20 2500 – 40 . . .+150 125) 2 500 7) Class F 55/150/56 V V A A V W °C V Inverse Diode IF= – IC Tcase = 25/80 °C IFM= – ICM Tcase = 25/80 °C; tp = 1 ms
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SKM300GA12e4
Abstract: No abstract text available
Text: SKM300GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 4 IGBT4 Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 353 A
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SKM300GA12E4
SKM300GA12e4
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Untitled
Abstract: No abstract text available
Text: SKM300GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 4 IGBT4 Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 353 A
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SKM300GA12E4
CAL009
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Untitled
Abstract: No abstract text available
Text: www.eLED.com T-1 3mm SOLID STATE LAMP Package Dimensions E34HD BRIGHT RED E34ID HIGH EFFICIENCY RED E34GD GREEN E34YD YELLOW E34AD YELLOW Features 1.HIGH INTENSITY. 2.LOW POWER CONSUMPTION. 3.POPULAR T-1 DIAMETER PACKAGE. 4.GENERAL PURPOSE LEADS. Notes:
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E34HD
E34ID
E34GD
E34YD
E34AD
EA0004
AUG/24/2001
E34-2/3
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Untitled
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR 37E î> 430E271 00 57 1 3 6 4 Optoelectronic Sp e c ific a tio n s_ IHAS T-m-33 Photon Coupled Isolator 4N35,4N36,4N37 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State 4N35-4N36-4N37 are gallium arsenide
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430E271
T-m-33
4N35-4N36-4N37
E51868
S-42662
92CS-429S1
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Untitled
Abstract: No abstract text available
Text: 3875081 G E SO LID 01E STATE 1 9 8 10 D Optoelectronic Specifications_ HARRIS SEMICOND SECTOR 37E D H 4302271 0G27272 A E l HAS Photon Coupled Isolator H24B1-H24B2 Ga As Infrared Em itting Diode & NPN Silicon Photo-Darlington Amplifier The GE Solid State H24B series consists of a gallium arsenide
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0G27272
H24B1-H24B2
E51868
S-42662
92CS-429S1
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diode 6t6
Abstract: H24B1 H24B2
Text: G E SOLID STATE o u r «/vw « -wi — -— 01 - — DE|3fi?SDfil D D n a i D S | Optoelectronic Specifications. T - q \ ' Z $ Photon Coupled Isolator H24B1-H24B2 Ga As Infrared Emitting Diode & NPN Silicon Photo-Darlington Amplifier The G E Solid State H24B series consists o f a gallium arsenide
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H24B1-H24B2
E51868
00pps
diode 6t6
H24B1
H24B2
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IGBT SKM 400 GA 122D SEMIKRON
Abstract: Si 122D semikron IGBT 150A 600v GA122 102D 122D V00E
Text: 013bb71 □□□3bcm S 1E D - . SEMIKRON INC Absolute Maximum Ratings Symbol Conditions ' Values . 1 0 2 D . 1 2 2 D Units 1000 1200 V 1000 1200 V V ces 20 kn V cgr Rge lc Tease = 2 5 /8 0 °C 2 0 0 /1 5 0 Ic m Tease = 2 5 /8 0 °C 4 0 0 /3 0 0
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13bb71
0DD37G1
T-39-31
SKM200
IGBT SKM 400 GA 122D SEMIKRON
Si 122D
semikron IGBT 150A 600v
GA122
102D
122D
V00E
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Untitled
Abstract: No abstract text available
Text: s e MIKROn Absolute Maximum Ratings Symbol C onditions V a lu e s Units 1 AC, 1 min. DIN 40 040 DIN tEC 68 T.1 1200 1200 400 / 300 800 / 600 ±20 2500 - 4 0 . . .+150 125 2 500 ?) Class F 55/150/56 Inverse Diode I f = - lc Tease — 25/80 ! C Tease 25/80 :!Cj tp —1 nts
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sy 320 diode
Abstract: sg 4001 diode GER-A sy 360 KT802A KY transistor diode sy 104 KT 315 a KT 802 mitteilung aus dem veb rft
Text: S E R V I C E - M I T T E I LU HClüN VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN { p is i! ! r a d i o -televisioni | JANUAR 1982 4 1 SEITE 1-4 Mitteilung aus dem VEB Fernsehgerätewerke "Friedr. Engels" Staßfurt Farbreinheitsstörungen bei In-line-Bildröhren
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Untitled
Abstract: No abstract text available
Text: seMIKROn Absolute Maximum Ratings Symbol VcES VcGR lc ICM V ges Ptot Tj, Tstg Vsol humidity climate Values Conditions ' R ge = 20 k£2 Tcase = 25/80 °C Tcase = 25/80 °C; tp Units = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1700
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case059
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Untitled
Abstract: No abstract text available
Text: 51E D Ô13bb71 DDD371Ô M7T se MIKRDN SEMIKRON INC Absolute Maximum Ratings Sym bol VcES VcGR lc ICM V ges Ptot Tj, Tslg Visol hum idity climate C onditions 1 • SEK G Values . 102 D 122 D 1000 I 1200 1000 1 1200 400/300 800/600 ±20 2500 - 5 5 . . .+150
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13bb71
DDD371Ã
013bb71
G037E5
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OPB105
Abstract: No abstract text available
Text: OPTEK TECHNOLOGY INC ObE D | bT'iôSÛO QOQQB^b 1 | u p iM io c ir o n ic i u iv is io r T R W Electronic Components Group m R ' wV Product Bulletin 5363 January 198S Photologic Slotted Optical Switches Type O PB 1050 0 Series OPB1Û51X Type H O U X O D O T M O K A T E S A NO D E
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skm 152 ga 123
Abstract: semikron skm 152 ga 123 semikron skm 152 ga skm 200 IGBT 600V 200A skm 22 gal 123 SKM 200 GB 102 D SKM 300 CIRCUIT 1502C M200G812 CASED56
Text: s e M IKRO n Absolute Maximum Ratings Symbol VcES VcGR lc ICM Rge = 20 k£2 Tcase = 2 5 /8 0 °C Tcase = 2 5 /8 0 °C; tp = 1 ms per IG BT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 6 8 T.1 Inverse Diode Tcase = 2 5 /8 0 °C If= - lc Tcase = 2 5 /8 0 C . tp = 1 ms
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123D1
skm 152 ga 123
semikron skm 152 ga 123
semikron skm 152 ga
skm 200 IGBT 600V 200A
skm 22 gal 123
SKM 200 GB 102 D
SKM 300 CIRCUIT
1502C
M200G812
CASED56
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