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    PJ230 Search Results

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    PJ230 Price and Stock

    PanJit Group PJ2301_R1_00001

    20V P-CHANNEL ENHANCEMENT MODE M
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    DigiKey PJ2301_R1_00001 Cut Tape 1
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    PJ2301_R1_00001 Digi-Reel 1
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    PJ2301_R1_00001 Reel 3,000
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    Ozdisan Elektronik PJ2301_R1_00001
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    PanJit Semiconductor PJ2301_R1_00001

    Rectifiers 600V,Fast Recovery Rectifiers,P-600,6A
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    NAC PJ2301_R1_00001 3,000
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    InterFET Corporation SMPJ230

    JFET JFET N-Channel -40V Low Ciss
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    Mouser Electronics SMPJ230
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    PanJit Semiconductor PJ20030A-27S5_R1_00301

    LDO Voltage Regulators 5.5V, 300mA, Ultra Low NoiseAnd Low Iq LDO
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    Mouser Electronics PJ20030A-27S5_R1_00301
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    InterFET Corporation SMPJ230TR

    JFET JFET N-Channel -40V Low Ciss
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    Mouser Electronics SMPJ230TR
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    PJ230 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pj2319

    Abstract: pj2329 PJ2336 PJ2319CX PJ2329CX PJ2336CX PJ2315CX PJ2318CX PJ2328CX 2.85V SOT 300mA
    Text: PJ2300Series 300mA CMOS LDO With Enable T he PJ2300 family is a positive voltage linear regulator SOT-23-5 developed utilizing CMOS technology featured low quiescent current 30µA typ , low dropout voltage, and high output voltage accuracy, making them ideal for battery


    Original     		PDF PJ2300Series 300mA PJ2300 OT-23-5 OT-23-5L 1000pF OT-23-5L pj2319 pj2329 PJ2336 PJ2319CX PJ2329CX PJ2336CX PJ2315CX PJ2318CX PJ2328CX 2.85V SOT 300mA

    PJ2306

    Abstract: No abstract text available
    Text: PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@3.2A=65mΩ 0.006(0.15)MIN. • RDS(ON), VGS@4.5V,IDS@2.8A=85mΩ 0.120(3.04) 0.110(2.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF PJ2306 OT-23 OT-23 MIL-STD-750 2010-REV PJ2306

    Untitled

    Abstract: No abstract text available
    Text: PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@4.5V,IDS@2.8A=85mΩ . 0.006(0.15)M IN • RDS(ON), VGS@10V,IDS@3.2A=65mΩ 0.120(3.04) 0.110(2.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF PJ2306 2002/95/EC OT-23 MIL-STD-750 2010-REV

    PJ230

    Abstract: No abstract text available
    Text: PJ2301 20V P-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@-4.5V,ID@-2.2A=105mΩ 0.120(3.04) • Advanced Trench Process Technology 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC converters


    Original     		PDF PJ2301 DVH6273DFNDJH 2011-REV RB500V-40 PJ230

    Untitled

    Abstract: No abstract text available
    Text: PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@3.2A=65mΩ 0.006(0.15)MIN. • RDS(ON), VGS@4.5V,IDS@2.8A=85mΩ 0.120(3.04) 0.110(2.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF PJ2306 OT-23 2011/65/EU IEC61249 OT-23 2010-REV

    PJ2301

    Abstract: No abstract text available
    Text: PJ2301 20V P-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@-1.8V,ID@-1.5A=200mΩ • RDS(ON), VGS@-4.5V,ID@-2.2A=105mΩ • Advanced Trench Process Technology 0.120(3.04) 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC converters


    Original     		PDF PJ2301 DVH6273DFNDJH 2011-REV PJ2301

    Untitled

    Abstract: No abstract text available
    Text: PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@3.2A=65mΩ • RDS(ON), VGS@4.5V,IDS@2.8A=85mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition


    Original     		PDF PJ2306 2010-REV

    PJ2301

    Abstract: No abstract text available
    Text: PJ2301 20V P-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@-4.5V,ID@-2.2A=105mΩ 0.120(3.04) • Advanced Trench Process Technology 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC converters


    Original     		PDF PJ2301 2002/95/EC OT-23 MIL-STD-750 2011-REV PJ2301

    PJ2301

    Abstract: No abstract text available
    Text: PJ2301 20V P-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@-4.5V,ID@-2.2A=105mΩ 0.120(3.04) • Advanced Trench Process Technology 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC converters


    Original     		PDF PJ2301 2002/95/EC OT-23 MIL-STD-750 2011-REV PJ2301

    PJ2306

    Abstract: PJ-23 PJ230
    Text: PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@3.2A=65mΩ • RDS(ON), VGS@4.5V,IDS@2.8A=85mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition


    Original     		PDF PJ2306 2002/95/EC OT-23 MIL-STD-750 OT-23 2010-REV PJ2306 PJ-23 PJ230