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    SKM200 Search Results

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    SKM200 Price and Stock

    IDEC Corporation KL9Z-SK-M2001

    SPARE KEY FOR KL SERIES
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    DigiKey KL9Z-SK-M2001 Bulk 1
    • 1 $30.16
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    Mouser Electronics KL9Z-SK-M2001
    • 1 $29.34
    • 10 $28.92
    • 100 $23.63
    • 1000 $22.81
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    Master Electronics KL9Z-SK-M2001
    • 1 $27.83
    • 10 $24.83
    • 100 $22.11
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    Sager KL9Z-SK-M2001
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    SEMIKRON SKM200GB12E4

    Igbt Module, 1.2 Kv, 313 A, Module; Continuous Collector Current:313A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:175°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SKM200GB12E4
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    Newark SKM200GB12E4 Bulk 9 1
    • 1 $225.07
    • 10 $200.3
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    TME SKM200GB12E4 1
    • 1 $257.72
    • 10 $227.58
    • 100 $204.72
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    SEMIKRON SKM200GB12V

    Igbt Module; Continuous Collector Current:311A; Collector Emitter Saturation Voltage:1.75V; Power Dissipation:-; Operating Temperature Max:175°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv; Transistor Mounting:Panel Rohs Compliant: Yes |Semikron SKM200GB12V
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    Newark SKM200GB12V Bulk 12
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    SEMIKRON SKM200GM12T4

    Igbt Module; Continuous Collector Current:314A; Collector Emitter Saturation Voltage:1.2Kv; Power Dissipation:-; Operating Temperature Max:175°C; Igbt Termination:Stud; Collector Emitter Voltage Max:800Mv; Transistor Mounting:Panel Rohs Compliant: Yes |Semikron SKM200GM12T4
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    Newark SKM200GM12T4 Bulk 12
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    SEMIKRON SKM200GB12T4

    Igbt Array & Module Transistor, Dual N Channel, 313 A, 1.8 V, 1.2 Kv, Module Rohs Compliant: Yes |Semikron SKM200GB12T4
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    Newark SKM200GB12T4 Bulk 1
    • 1 $156.47
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    RS SKM200GB12T4 Bulk 1
    • 1 $217.56
    • 10 $193.63
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    Richardson RFPD SKM200GB12T4 1
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    SKM200 Datasheets (52)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SKM200GA123D Semikron SEMITRANS M - IGBT Modules Original PDF
    SKM200GA123D Semikron SEMITRANS IGBT Modules New Range Scan PDF
    SKM200GAL123D Semikron SEMITRANS M - IGBT Modules Original PDF
    SKM200GAL123D Semikron SEMITRANS IGBT Modules New Range Scan PDF
    SKM200GAL125D Semikron Ultra Fast IGBT Modules Original PDF
    SKM200GAL125D Semikron SEMITRANS 3 - Ultra Fast IGBT Modules Original PDF
    SKM200GAL126D Semikron Trench IGBT Modules Original PDF
    SKM200GAL163D Semikron SEMITRANS IGBT Modules New Range Scan PDF
    SKM200GAL173D Semikron SEMITRANS M - IGBT Modules Original PDF
    SKM200GAL173D Semikron IGBT Modules Original PDF
    SKM200GAL176D Semikron SEMITRANS M - IGBT Modules Original PDF
    SKM200GAR123D Semikron SEMITRANS M - IGBT Modules Original PDF
    SKM200GAR123D Semikron SEMITRANS IGBT Modules New Range Scan PDF
    SKM200GAR125D Semikron SEMITRANS 3 - Ultra Fast IGBT Modules Original PDF
    SKM200GAR125D Semikron Ultra Fast IGBT Modules Original PDF
    SKM200GAR163D Semikron SEMITRANS IGBT Modules New Range Scan PDF
    SKM200GAR173D Semikron SEMITRANS M - IGBT Modules Original PDF
    SKM200GAR173D Semikron IGBT Modules Original PDF
    SKM200GAX173D Semikron IGBT Module Original PDF
    SKM200GAY173D Semikron IGBT Module Original PDF

    SKM200 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SKM200GAL12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 313 A Tc = 80 °C 241 A 200 A ICnom ICRM SEMITRANS 3 IGBT4 Modules SKM200GAL12E4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V


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    SKM200GAL12E4 PDF

    SKM200GB12V

    Abstract: IGBT K 40 T 1202 SKM200GB-12V SKM2
    Text: SKM200GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 311 A Tc = 80 °C 237 A 200 A ICnom ICRM SEMITRANS 3 ICRM = 3xICnom 600 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 229 A Tc = 80 °C


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    SKM200GB12V SKM200GB12V IGBT K 40 T 1202 SKM200GB-12V SKM2 PDF

    IGBT K 40 T 1202

    Abstract: SKM200GB12V skm20
    Text: SKM200GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 304 A Tc = 80 °C 229 A 200 A ICnom ICRM SEMITRANS 3 ICRM = 3xICnom 600 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 229 A Tc = 80 °C


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    SKM200GB12V IGBT K 40 T 1202 SKM200GB12V skm20 PDF

    Untitled

    Abstract: No abstract text available
    Text: SKM200GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 304 A Tc = 80 °C 229 A 200 A ICnom ICRM SEMITRANS 3 ICRM = 3xICnom 600 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 229 A Tc = 80 °C 172


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    SKM200GB12V PDF

    Untitled

    Abstract: No abstract text available
    Text: SKM200GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 313 A Tc = 80 °C 241 A 200 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules SKM200GAL12T4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V


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    SKM200GAL12T4 PDF

    Untitled

    Abstract: No abstract text available
    Text: SKM200GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 314 A Tc = 80 °C 242 A 200 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules ICRM = 3xICnom 600 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 229


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    SKM200GB12T4 cle009 PDF

    Untitled

    Abstract: No abstract text available
    Text: SKM200GAR12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 313 A Tc = 80 °C 241 A 200 A ICnom ICRM SEMITRANS 3 IGBT4 Modules ICRM = 3xICnom 600 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


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    SKM200GAR12E4 PDF

    Untitled

    Abstract: No abstract text available
    Text: SKM200GAL12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 314 A Tc = 80 °C 242 A 200 A ICnom ICRM SEMITRANS 3 IGBT4 Modules ICRM = 3xICnom 600 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 229 A


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    SKM200GAL12E4 PDF

    Untitled

    Abstract: No abstract text available
    Text: SKM200GAR12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 313 A Tc = 80 °C 241 A 200 A ICnom ICRM SEMITRANS 3 IGBT4 Modules SKM200GAR12E4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V


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    SKM200GAR12E4 SKM200GAR12E4 PDF

    SKM200GBD126

    Abstract: SKM200GBD126D 200gb SKM200GBD
    Text: SKM200GBD126D Absolute Maximum Ratings Symbol Conditions IGBT  7  .5 6 % 7  *5/ 6   .56"       , Units *.//    .5 6 .9/ :   ;/ 6 *</ : 9;/ : = ./  7  *.5 6 */ A   .5 6 .5 :   ;/ 6 *5 : 5/ : 7  *5/ 6


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    SKM200GBD126D 200GBD126D SKM200GBD126 SKM200GBD126D 200gb SKM200GBD PDF

    SKM200GAL12T4

    Abstract: No abstract text available
    Text: SKM200GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 314 A Tc = 80 °C 242 A 200 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules ICRM = 3xICnom 600 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


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    SKM200GAL12T4 Isol009 SKM200GAL12T4 PDF

    SKM200GB12E4

    Abstract: skm200gb1-2e4 SKM200GB-12E4
    Text: SKM200GB12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 314 A Tc = 80 °C 242 A 200 A ICnom ICRM SEMITRANS 3 IGBT4 Modules ICRM = 3xICnom 600 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 229 A


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    SKM200GB12E4 SKM200GB12E4 skm200gb1-2e4 SKM200GB-12E4 PDF

    Untitled

    Abstract: No abstract text available
    Text: SKM200GB12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 313 A Tc = 80 °C 241 A 200 A ICnom ICRM SEMITRANS 3 IGBT4 Modules SKM200GB12E4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V


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    SKM200GB12E4 PDF

    Untitled

    Abstract: No abstract text available
    Text: SKM200GB12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 314 A Tc = 80 °C 242 A 200 A ICnom ICRM SEMITRANS 3 IGBT4 Modules ICRM = 3xICnom 600 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 229 A


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    SKM200GB12E4 CAL009 PDF

    diode 331

    Abstract: skm200gal12e4 switched reluctance motor IGBT switched reluctance motor
    Text: SKM200GAL12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 314 A Tc = 80 °C 242 A 200 A ICnom ICRM SEMITRANS 3 IGBT4 Modules ICRM = 3xICnom 600 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 229 A


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    SKM200GAL12E4 VCEs009 diode 331 skm200gal12e4 switched reluctance motor IGBT switched reluctance motor PDF

    SKM200GB12T4

    Abstract: Semitrans 314
    Text: SKM200GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 314 A Tc = 80 °C 242 A 200 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules ICRM = 3xICnom 600 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 229


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    SKM200GB12T4 SKM200GB12T4 Semitrans 314 PDF

    Untitled

    Abstract: No abstract text available
    Text: SKM200GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 313 A Tc = 80 °C 241 A 200 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules SKM200GB12T4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V


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    SKM200GB12T4 PDF

    Untitled

    Abstract: No abstract text available
    Text: SKM200GM12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 313 A Tc = 80 °C 241 A 200 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules SKM200GM12T4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V


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    SKM200GM12T4 PDF

    Untitled

    Abstract: No abstract text available
    Text: SKM200GAR12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 313 A Tc = 80 °C 241 A 200 A ICnom ICRM SEMITRANS 3 IGBT4 Modules SKM200GAR12E4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V


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    SKM200GAR12E4 PDF

    SKM200GB12T4

    Abstract: No abstract text available
    Text: SKM200GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 314 A Tc = 80 °C 242 A 200 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules ICRM = 3xICnom 600 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 229


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    SKM200GB12T4 SKM200GB12T4 PDF

    SKM200GAL12T4

    Abstract: diode 331
    Text: SKM200GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 314 A Tc = 80 °C 242 A 200 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules ICRM = 3xICnom 600 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


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    SKM200GAL12T4 SKM200GAL12T4 diode 331 PDF

    Untitled

    Abstract: No abstract text available
    Text: SKM200GAR101D Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)1.0k V(BR)GES (V)20 I(C) Max. (A)200 Absolute Max. Power Diss. (W)1.25k Minimum Operating Temp (øC) Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case0.1


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    SKM200GAR101D PDF

    Untitled

    Abstract: No abstract text available
    Text: SKM200GAL12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 314 A Tc = 80 °C 242 A 200 A ICnom ICRM SEMITRANS 3 IGBT4 Modules ICRM = 3xICnom 600 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 229 A


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    SKM200GAL12E4 PDF

    Untitled

    Abstract: No abstract text available
    Text: SKM200GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 311 A Tc = 80 °C 237 A 200 A ICnom ICRM SEMITRANS 3 ICRM = 3xICnom 600 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 229 A Tc = 80 °C


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    SKM200GB12V E6353Fig. PDF