f12n10
Abstract: 12n100p PLUS220SMD IXFH12N100P IXFV12N100PS diode 6A 1000v
Text: PolarTM Power MOSFET HiPerFETTM IXFH12N100P IXFV12N100P IXFV12N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 12A Ω 1.05Ω 300ns PLUS220 (IXFV) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXFH12N100P
IXFV12N100P
IXFV12N100PS
300ns
PLUS220
150GS
12N100P
1-08-A
f12n10
PLUS220SMD
IXFH12N100P
IXFV12N100PS
diode 6A 1000v
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IXGP30N60C3D4
Abstract: IXGA30N60C3D4 g30N60
Text: IXGA30N60C3D4 IXGP30N60C3D4 GenX3TM 600V IGBTs w/ Diode VCES = IC110 = VCE sat ≤ tfi(typ) = High-Speed PT IGBTs for 40-100kHz Switching 600V 30A 3.0V 47ns TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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40-100kHz
IXGA30N60C3D4
IXGP30N60C3D4
IC110
O-263
IC110
O-220AB
8-06B
IXGP30N60C3D4
g30N60
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ixgh30n60c3d1
Abstract: 600v 30A fast recovery diode g30n60c3 Tvj-150 30N60C3
Text: IXGH30N60C3D1 IXGT30N60C3D1 GenX3TM 600V IGBTs w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed PT IGBTs for 40-100 kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGH30N60C3D1
IXGT30N60C3D1
IC110
O-268
IF110
O-247)
O-268
O-247
600v 30A fast recovery diode
g30n60c3
Tvj-150
30N60C3
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Untitled
Abstract: No abstract text available
Text: GenX3TM 600V IGBTs w/ Diode IXGH30N60C3D1 IXGT30N60C3D1 VCES IC110 VCE sat tfi(typ) High-Speed PT IGBTs for 40-100 kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGH30N60C3D1
IXGT30N60C3D1
IC110
O-268
IF110
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Untitled
Abstract: No abstract text available
Text: GenX3TM 600V IGBTs w/ Diode VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA30N60C3D4 IXGP30N60C3D4 High-Speed PT IGBTs for 40-100kHz Switching 600V 30A 3.0V 47ns TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IC110
IXGA30N60C3D4
IXGP30N60C3D4
40-100kHz
O-263
O-220AB
8-06B
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T3D 46 DIODE
Abstract: Diode T3D 54 T3D 54 DIODE T3D 53 diode KAI-4010M T3D 53 DIODE T3D 95 40MHZ HLMP-8115 KAI-4010
Text: IMAGE SENSOR SOLUTIONS DEVICE PERFORMANCE SPECIFICATION KODAK KAI-4010 KODAK KAI-4010M KODAK KAI-4010CM Image Sensor 2048 H x 2048 (V) Interline Transfer Progressive Scan CCD November 25, 2003 Revision 2.0 KAI-4010 Series Rev 2.0 www.kodak.com/go/imagers
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KAI-4010
KAI-4010M
KAI-4010CM
KAI-4010
T3D 46 DIODE
Diode T3D 54
T3D 54 DIODE
T3D 53 diode
KAI-4010M
T3D 53
DIODE T3D 95
40MHZ
HLMP-8115
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TLP582
Abstract: No abstract text available
Text: TO SHIBA PHOTOCOUPLER SEMICONDUCTOR TOSHIBA TECHNICAL TLP582 DATA G aA íA s IRED & PHOTO 1C TLP582 MOS FET GATE DRIVER TRANSISTOR INVERTER The T O S H IB A TLP582 consists of a GaA-fAs lig h t em itting diode and integrated high gain, high speed photodetector.
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TLP582
TLP582)
TLP582
400ns
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diode RP 4040
Abstract: diode RP 6040 DIODE REDRESSEMENT 4040 DIODE REDRESSEMENT RP 8040 X diode RP 6020 ic 4040 RC snubber circuit ku1010 RP 1240 M
Text: o THOMSON-CSF rectifier diode > 100A selector guide guide de sélection diodes de redressement ^ 100 A 143 new standard single phase all diodes metal stacks nouveaux ponts métalliques standards monophasés tout diodes IHOMSON-CSF T ype A v e ra g e o u tp u t
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TNF300
diode RP 4040
diode RP 6040
DIODE REDRESSEMENT 4040
DIODE REDRESSEMENT
RP 8040 X
diode RP 6020
ic 4040
RC snubber circuit
ku1010
RP 1240 M
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TLP3009
Abstract: tlp300
Text: TLP3009,3010,3011,3012 G aA s IRED a P H O TO -T R IA C TENTATIVE DATA OFFICE MACHINE. HOUSEHOLD USE EQUIPMENT. TRIAC DRIVER. SOLID STATE RELAY. The TOSHIBA TLP3009, TLP3010, TLP3011 and TLP3012 consist of a photo-triac optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic
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TLP3009
TLP3009,
TLP3010,
TLP3011
TLP3012
TLP3009)
TLP3010)
TLP3011)
TLP3012)
100mA
tlp300
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TLP733,TLP734 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP733, TLP734 OFFICE MACHINE U n it in mm HOUSEHOLD USE EQUIPM ENT SOLID STATE RELAY SWITCHING PO W ER SUPPLY The T O S H IB A TLP733 and TLP734 consist of a photo-transistor op tically coupled to a g allium arsenide infrared em itting diode in a
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TLP733
TLP734
TLP733,
TLP734
UL1577,
E67349
EN60065
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thyristor diode module IRK E78996
Abstract: IRK E78996 IRKT27 E78996 A2JS HALF WAVE RECTIFIER CIRCUITS high speed IRK THYRISTOR THYRISTOR MODULE
Text: Bulletin 127130 rev. C 09/97 International IQ R Rectifier IRK.26 SERIES THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR NEWADD-A-pak Power Modules Features • ■ ■ ■ ■ ■ Electrically isolated: DBC base plate 3 5 0 0 V RMS isola tin g vo ltag e S ta n d ard JE D E C package
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E78996
12-Gate
thyristor diode module IRK E78996
IRK E78996
IRKT27
A2JS
HALF WAVE RECTIFIER CIRCUITS high speed
IRK THYRISTOR THYRISTOR MODULE
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27kn
Abstract: 74286
Text: GaAs IRED & PHOTO-THYRISTOR T L P 7 4 7 J TLP747J U n it in mm OFFICE M ACHINE. HO USEH O LD USE EQ U IPM EN T. SOLID STATE RELAY. SW ITCHIN G P O W E R SUPPLY. The TO SH IBA TLP747J consists o f a photo-thyristor optically coupled to a gallium arsenide infrared em itting diode in a six lead plastic
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TLP747J)
TLP747J
150mA
UL1577,
E67349
BS415
BS7002
EN60950)
11-7A6
SS4330784
27kn
74286
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SXG300G
Abstract: 40101B
Text: SXG80G BRIDGE RECTIFIER DATA b Three-Phase Diode Bridges UNIT TYPE Ipc amp» A .N T. T. w 1DC amps A .F Sm/s • FS M T. amps I* t A 2s 25 C 4 5°C T. 25°C 80 68 16 3 85 190 170 SXG120G 100 120 105 205 S X G 1 80G 180 160 205 205 205 SXG21OG 210 1 85 370
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SXG80G
SXG120G
SXG21OG
SXG300G
SXG425G
SXG525G
SXGA620G
SXH640G
SXT670G
40101B
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ANA 618
Abstract: P4009 PS4011 P4010 ps4005 PS4001 PS4003 "Photo Interrupter" PS4001 PS4009 PS4007
Text: N E C 3QE D EL EC TRONICS INC G • b427525 002^771 7 ■ PHOTO IN TERRU PTERS PS4001 ,PS4003IRS4005,PS4007,P$4009,P$4010,PS4011 P H O T O IN T E R R U P T E R D ESC R IP T IO N The PS4001, PS4003, PS4005, PS4007, PS4009 are photo coupled interrupter modules containing a GaAs light emitting
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PS4001
PS4003IRS4005
PS4007
PS4011
PS4001,
PS4003,
PS4005,
PS4007,
PS4009
l0-20
ANA 618
P4009
PS4011
P4010
ps4005
PS4001
PS4003
"Photo Interrupter" PS4001
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TC74HC40102A
Abstract: TC74HC40103A
Text: TOSHIBA T C 74H C 4010 2 ,4 0 1 03AP/AF TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC 74H C 40102A P, TC74HC 40102AF TC 74H C 40103A P, TC74HC 40103AF TC74HC40102AP/AF DUAL BCD PROGRAMMABLE DOWN COUNTER TC74HC40103AP/AF 8 - B I T BINARY PROGRAMMABLE DOWN COUNTER
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03AP/AF
0102A
TC74HC
40102AF
0103A
40103AF
TC74HC40102AP/AF
TC74HC40103AP/AF
TC74HC40102A
TC74HC40103A
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40102B
Abstract: TC74HC40102AF TC74HC40102AP TC74HC40103AF TC74HC40103AP TC74HC40102A TC74HC40103A TC74HC40102
Text: TOSHIBA TC 74H C 40102,4 01 03AP/AF TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC 74H C 40102A P, TC 74HC 40102AF TC 74H C 40103A P, TC 74HC 40103AF TC74HC40102AP/AF DUAL BCD PROGRAMMABLE DOWN COUNTER TC74HC40103AP/AF 8 - B I T BINARY PROGRAMMABLE DOWN COUNTER
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TC74HC40102
40103AP/AF
TC74HC40102AP,
TC74HC40102AF
TC74HC40103AP,
TC74HC40103AF
TC74HC40102AP/AF
TC74HC40103AP/AF
TC74HC40102A
TC74HC40103A
40102B
TC74HC40102AP
TC74HC40103AF
TC74HC40103AP
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74HC40103
Abstract: No abstract text available
Text: Technical Data CD54/74HC40102, CD54/74HCT40102 CD54/74HC40103, CD54/74HCT40103 HARRIS SEMICOND SECTOR 27E D B File Number 430 2 27 1 0 G1 Û011 1 1596 Hi HAS High-Speed CMOS Logic 8-Stage Synchronous Down Counters 40102 - 2-D ecad e B C D T yp e 40103 - 8-B it Binary T yp e
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CD54/74HC40102,
CD54/74HCT40102
CD54/74HC40103,
CD54/74HCT40103
RCA-CD54/74HC40102
54/74HCT40102,
74HC40103
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40107B
Abstract: 0107B CD40107B
Text: HARRIS CMOS Dual 2-Input NAND Buffer/Driver High-Voltage T ype 2 0 -V o lt Rating • C D 4010 7B isa dual 2-inp ut N A N D b u ffe r/d riv e r containing tw o independent 2in p u t N A N D buffers w ith open-drain single n-channel transistor outputs. This device
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40107B
14-lead
CD40107B
CD40107BF
0107B
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TC74HC40103A
Abstract: No abstract text available
Text: TOSHIBA TC74HC40102AP/AF TC74HC40103AP/AF TC 74H C 40102 Dual BCD Program m able Down Counter TC74HC40103 8-B it Binary Program mable Down Counter The TC74HC40102A and TC74HC40103A are high speed CMOS PROGRAMMABLE DOWN COUNTERS fabricated with silicon gate C2MOS technology.
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TC74HC40102AP/AF
TC74HC40103AP/AF
TC74HC40103
TC74HC40102A
TC74HC40103A
TC74HC32A
TC74HC/HCT
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RCA-CD40105B
Abstract: No abstract text available
Text: Technical Data File N um ber CD54/74HC40105 CD54/74HCT 40105 1834 HARR IS S E M I C O N D S E CT OR . 2?E, D 4 3 02 S7 1 □ □ 1 0 0 5 b 3 • HAS T -UU-%-00 High-Speed CM O S Logic 4-Bit X 16-Word FIFO Register DATA-OUT READY DATA-IN R EADY vcc‘ 16 0N0> 6
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CD54/74HC40105
CD54/74HCT
16-Word
CD54/74HC/HCT40105.
RCA-CD40105B
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CD40107BE
Abstract: schematic diagram NAND gates dg37 CD401078 Cd40107be functional diagram 15-V CD40107B
Text: 44E D HARRIS SEMICOND SECTOR • *4302271 □ □ 3 7 7 1 1 3 BHAS -Z I U HARRIS CMOS Dual 2-Input NAND Buffer/Driver High-Voltage Type 2 0 -V o lt Rating) ■ CD 40107B is a dual 2 -in p u t N A N D b u ffe r/d riv e r containing tw o independent 2* in p u t N A N D buffers w ith open-drain single
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CD40107B
20-Volt
14-lead
CD40107BE
CD40107BF
CD40107B
500pF
CD40107BE
schematic diagram NAND gates
dg37
CD401078
Cd40107be functional diagram
15-V
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74LS
Abstract: CD40106BC CD40106BCM CD40106BCN M14A MC14584B MM74C14 N14A mc14584 diode D254
Text: Revised January 1999 S E M IC O N D U C T D R T M General Description Features T h e C D 40106BC Hex Schm itt Trigger is a m onolithic com plem entary MOS CMOS integrated circuit constructed w ith N and P-channel enhancem ent transistors. The posi tive and negative-going threshold voltages, Vy+ and V j_ ,
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CD40106BC
005V/Â
74LS
CD40106BCM
CD40106BCN
M14A
MC14584B
MM74C14
N14A
mc14584
diode D254
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RCA-CD40107
Abstract: cd40107 application CD40107BE CD401078 Cd40107be functional diagram MPC resistor 15-V CD40107B CD4007B
Text: C D 40107B Types CMOS Dual 2-Input NAND Buffer/Driver High-Voltage T y p e 2 0 -V o lt Rating T h e R C A -C D 4 0 1 07 B is a d u a l 2 - in p u t N A N D b u ffe r/d r iv e r c o n ta in in g t w o in d e p e n d e n t 2in p u t N A N D b u ffe rs w ith o p e n -d ra in single
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CD40107B
20-Volt
RCA-CD40107
14-lead
92CS-27259HÃ
CD40107BE
CD40107BF
CD40107B
cd40107 application
CD40107BE
CD401078
Cd40107be functional diagram
MPC resistor
15-V
CD4007B
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CD40107B
Abstract: s2444
Text: I ^ Tex a s In s t r u m e n t s C D 40107B Types Data sheet acquired from Harris S em iconductor S C H S 098 CMOS Dual 2-Input NAND Buffer/Driver High-Voltage T y p e 2 0 -V olt Rating • CD40107B is a dual 2-input NAND buffer/driver containing tw o independent 2input NAND buffers w ith open-drain single
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40107B
CD40107B
s2444
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