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    IXFH12N100P Search Results

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    IXFH12N100P Price and Stock

    Littelfuse Inc IXFH12N100P

    MOSFET N-CH 1000V 12A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFH12N100P Tube 450 1
    • 1 $10.3
    • 10 $10.3
    • 100 $6.10867
    • 1000 $4.78312
    • 10000 $4.78312
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    Verical IXFH12N100P 1,140 30
    • 1 -
    • 10 -
    • 100 $5.645
    • 1000 $4.671
    • 10000 $4.671
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    Arrow Electronics IXFH12N100P 1,166 46 Weeks 30
    • 1 -
    • 10 -
    • 100 $5.645
    • 1000 $4.671
    • 10000 $4.671
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    RS IXFH12N100P Bulk 8 Weeks 30
    • 1 -
    • 10 -
    • 100 $7.4
    • 1000 $7.4
    • 10000 $7.4
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    IXYS Corporation IXFH12N100P

    MOSFETs 12 Amps 1000V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFH12N100P 668
    • 1 $9.5
    • 10 $8.27
    • 100 $6.1
    • 1000 $4.78
    • 10000 $4.78
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    Newark IXFH12N100P Bulk 692 1
    • 1 $9.57
    • 10 $8.76
    • 100 $7.44
    • 1000 $4.97
    • 10000 $4.97
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    Future Electronics IXFH12N100P Tube 300
    • 1 -
    • 10 -
    • 100 $4.82
    • 1000 $4.66
    • 10000 $4.66
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    TME IXFH12N100P 298 1
    • 1 $8.77
    • 10 $6.96
    • 100 $6.26
    • 1000 $6.26
    • 10000 $6.26
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    IXFH12N100P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFH12N100P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 12A TO-247 Original PDF

    IXFH12N100P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarTM HiPerFETTM Power MOSFETs VDSS ID25 IXFH12N100P IXFV12N100P IXFV12N100PS RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ 1000V 12A Ω 1.05Ω 300ns PLUS220 (IXFV) G Symbol Test Conditions Maximum Ratings VDSS


    Original     		IXFH12N100P IXFV12N100P IXFV12N100PS 300ns PLUS220 12N100P 1-08-A PDF

    IXFH12N100P

    Abstract: 12n100p f12n10
    Text: PolarTM HiPerFETTM Power MOSFETs IXFH12N100P IXFV12N100P IXFV12N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000


    Original     		IXFH12N100P IXFV12N100P IXFV12N100PS 300ns PLUS220 PLUS220SMD O-247 12N100P 1-08-A f12n10 PDF

    f12n10

    Abstract: 12n100p f12n
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH12N100P IXFV12N100P IXFV12N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 12A Ω 1.05Ω 300ns PLUS220 (IXFV) G Symbol Test Conditions


    Original     		IXFH12N100P IXFV12N100P IXFV12N100PS 300ns PLUS220 PLUS220SMD 12N100P f12n10 f12n PDF

    f12n10

    Abstract: 12n100p PLUS220SMD IXFH12N100P IXFV12N100PS diode 6A 1000v
    Text: PolarTM Power MOSFET HiPerFETTM IXFH12N100P IXFV12N100P IXFV12N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 12A Ω 1.05Ω 300ns PLUS220 (IXFV) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXFH12N100P IXFV12N100P IXFV12N100PS 300ns PLUS220 150GS 12N100P 1-08-A f12n10 PLUS220SMD IXFH12N100P IXFV12N100PS diode 6A 1000v PDF