tic 122
Abstract: TIC 122 Transistor tic 115 TIC 122 Transistor datasheet BAS16 BAS16C
Text: SMALL SIGNAL SWITCHING DIODES BAS16 Features • S ilicon E pitaxial P lanar Diode · Fas t switching diode in cas e S OT-23, es pecially S OT -23 .122 3.1 .110 (2.8) s uited for automatic ins ertion. .016 (0.4) Top V iew Mechanic al Data .056 (1.43 ) .052 (1.33 )
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BAS16
OT-23,
OT-23
tic 122
TIC 122 Transistor
tic 115
TIC 122 Transistor datasheet
BAS16
BAS16C
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RECTIFIER DIODES SGS
Abstract: No abstract text available
Text: PLQ 08 PLQ 1 FAST RECOVERY RECTIFIER DIODES VERY FAST FORWARD AND REVERSE RECOVERY DIODES SUITABLE APPLICATION SWTCHING POWER TRANSISTORS DRIVER CI R CU I T S SERI E S DI O D ES IN ANTISATURATION CLAMP SPEED UP DIODE IN DISCRETE DARLINGTON. THYRISTORS GATE DRIVER CIRCUITS
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MPL860
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD MPL860PT SURFACE MOUNT SCHOTTKY DIODE ARRAY VOL TA GE 60 Vo l t s CURRENT 8 A m p er es PROVISIONAL SPEC. APPLICATION * DC to DC Converters * Switch- Mode Power Supplies * Notbook PC FEATURE SMP * Sm al l S u r f ac e M o u n t i n g T y p e. SMP
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MPL860PT
MPL860
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Untitled
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SPL540PT SURFACE MOUNT SCHOTTKY DIODE ARRAY VOL TA GE 40 Vo l t s CURRENT 5 A m p er es PROVISIONAL SPEC. APPLICATION * DC to DC Converters * Switch- Mode Power Supplies * Notbook PC FEATURE SMP * Sm al l S u r f ac e M o u n t i n g T y p e. SMP
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SPL540PT
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Untitled
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SPL840PT SURFACE MOUNT SCHOTTKY DIODE ARRAY VOL TA GE 40 Vo l t s CURRENT 8 A m p er es PROVISIONAL SPEC. APPLICATION * DC to DC Converters * Switch- Mode Power Supplies * Notbook PC FEATURE SMP * Sm al l S u r f ac e M o u n t i n g T y p e. SMP
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SPL840PT
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spl1040pt
Abstract: SPL1040
Text: CHENMKO ENTERPRISE CO.,LTD SPL1040PT SURFACE MOUNT SCHOTTKY DIODE ARRAY VOL TA GE 40 Vo l t s CURRENT 10 A m p er es PROVISIONAL SPEC. APPLICATION * DC to DC Converters * Switch- Mode Power Supplies * Notbook PC FEATURE SMP * Sm al l S u r f ac e M o u n t i n g T y p e. SMP
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SPL1040PT
spl1040pt
SPL1040
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DIODE marking ED
Abstract: SOT223 Package
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M V7404T1 Silicon Hyper-Abrupt Ttining Diode Motorola Preferred Device This silicon tuning diode is designed for high capacitance and a tuning ratio of greater than 10 tim es over a bias range of 2.0 to 10 volts. It provides tuning over
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T-223
OT-223
7404T1
DIODE marking ED
SOT223 Package
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s116l
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Diode BAS116LT1 This switching diode has the following features: • Motorola Preferred Device Low Lea kag e C urrent Applications • M edium S p e e d Switching Tim es • Available in 8 m m Tape and Reel Use BA S116LT1 to order the 7 inch /3,0 00 unit reel
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S116LT1
116LT
inch/10
BAS116LT1
s116l
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Untitled
Abstract: No abstract text available
Text: bbS3T31 Philips Semiconductors DD2bfl32 122 B i APX Product specification Low voltage avalanche diode PLVA400A N AUER PHILIPS/DISCRETE FEATUR ES DESCRIPTION • Very low dynamic impedance at low currents: approximately V£o of conventional series The PLVA400A series are silicon
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bbS3T31
DD2bfl32
PLVA400A
PLVA400A
aPLVA456A
PLVA459A
PLVA462A
PLVA465A
PLVA468A
PLVA459A
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marking K2 diode
Abstract: MARKING 5D DIODE schottky diode marking A7
Text: DIODE wffife SOT-23/TO-236AB ‘TM PD ’ GENERAL-PURPOSE a n d LOW-LEAKAGE D IO D ES ELECTRICAL CHARACTERISTICS a t T . = 25°C vF Description *rr Max. Max. nA (ns) <PF) 1 ,2 ,3 10 25 4.0 6.0 ANCK VBR Min. Max. Marking (mA) (V) (V) @IF (mA) 1.0 Device Type
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OT-23/TO-236AB
TMPD914
TMPD2836
TMPD2838
TMPD4148
TMPD6050
TMPD7000
A8920SLR)
BAV70
BAV99
marking K2 diode
MARKING 5D DIODE
schottky diode marking A7
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diode RA 225 R
Abstract: No abstract text available
Text: r z 7 s c s m o M S O N ^ 7# M OiRKm iCTfM OgS BAT 46 SMALL SIGNAL SCHOTTKY DIODE D ES C R IPT IO N General purpose, metal to silicon diode featuring high breakdown voltage low turn-on voltage. A B S O L U T E RATING S limiting values Sym bol V P a ra m e te r
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SG 21 DIODE SMD
Abstract: marking d87 smd diode marking sG smd diode marking sG 13 D86 smd smd diode D86 D87 SOT23 MARKING sg SOT23 diode smd marking e2 smd sot23 marking E3
Text: rz 7 Ä 7# SCS-THOMSON B A T 5 4 Ser i es SMALL SIGNAL SCHOTTKY DIODE FEATURES AND BENEFITS • VERY SMALL CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ LOW FORWARD VOLTAGE DROP ■ EXTREMELY FAST SWITCHING ■ SURFACE MOUNT DEVICE BAT54 DESCRIPTION
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BAT54
OT-23
BAT54S
SG 21 DIODE SMD
marking d87
smd diode marking sG
smd diode marking sG 13
D86 smd
smd diode D86
D87 SOT23
MARKING sg SOT23
diode smd marking e2
smd sot23 marking E3
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p350j
Abstract: No abstract text available
Text: 1SV252 T O SH IB A TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE 1 SV2 52 Unit in mm VHF-UHF BAND RF ATTENUATOR APPLICATIONS. 2.1 ± 0.1 1.25Í0.1 oo + » 2 -ES MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range
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1SV252
SC-70
p350j
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Untitled
Abstract: No abstract text available
Text: Central" CMPD7000 Semiconductor Corp. DUAL SILICON SWITCHING DIODE SERIES CONNECTION DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CM PD7000 type is an ultra-high speed silicon sw itching diod es m anufactured by the epitaxial planar process, in an epoxy molded
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CMPD7000
PD7000
OT-23
357erse
100mA
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smd marking YF
Abstract: Diode marking m7 marking code YF diode smd m7 TU-101 TC-10 R3T marking diode smd marking code catalog max6532 D1FM3
Text: Schottky Barrier Diode Single Diode mtmm o u t lin e Package I 1F D1FM3 30V 5A 'C athode mark Feature r | l eS e -n • Small S M D • V f=0.46V • <5lR=0.1mA Unit I mm Weight 0.058k T yp m (M G> - H «g) • Low V f =0 .4 6 V • Low lR -0.1m A T yp e No.
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TC-10
J53Z-1)
smd marking YF
Diode marking m7
marking code YF diode
smd m7
TU-101
R3T marking
diode smd marking code catalog
max6532
D1FM3
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BB147
Abstract: IL062
Text: Philips Semiconductors Product specification VHF variable capacitance diode BB147 FEA TU R ES • Ultra high ratio • Excellent matching to 2 % DMA Direct Matching Assembly • Very small plastic S M D package • C28: 2 .6 pF; ratio 40. A P P L IC A T IO N S
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BB147
OD323)
BB147
OD323
il062b
IL062
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Untitled
Abstract: No abstract text available
Text: * PRELIMINARY * MMAD1104 8700 E. Thomas Road Scottsdale, AZ 85251 Tel: 602 941-6300 Fax (602) 947-1503 S w itc h in g D io d e A rra y F EA TU R ES • Dual 8 Diode Array • SOIC 14 pin Surface Mount Package • UL 94V-0 Flammability Classification
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MMAD1104
100mA
MSC0908
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Untitled
Abstract: No abstract text available
Text: 1SS395 TO SH IB A TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SS39 5 Unit in mm 2.1 ± 0.1 • • Small Package Low Forward Voltage : Vjr 2 —0.23 V (Typ.) @Ijn = 5mA 1.25 + 0.1 oo + ' 2 - -ES 2 od + i MAXIMUM RATINGS (Ta = 25°C)
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1SS395
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varistors 125-005
Abstract: No abstract text available
Text: S EM IC O N D U C T O R PG08HSUSC TECHNI CAL DATA Single Line TVS Diode for ESD Protection in P ortable Electronics Protection in Portable Electronics A pplications. y FEA TU R ES • 350 Watts peak pulse power tp=8/20//s • Transient protection for data lines to
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PG08HSUSC
8/20//s)
5/50ns)
8/20//s
varistors 125-005
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Untitled
Abstract: No abstract text available
Text: f Z Z SGS-THOMSON ^ 7# R STTA6006T V 1/2 TURBQSWITCH "A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS If(av) 2*30A V rrm 600V trr (typ) 35ns A2 Kl AI STTA6006T(V)1 1.5V Vf (max) ES HE K2 A2 Kl K2 A1 STTA6006T(V)2 FEATURES AND BENEFITS
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STTA6006T
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ups numeric
Abstract: numeric ups 600 MSB6 MSB05
Text: M SB05 M SB1, M SB2, M SB4, M SB6, M SB8, M SB 10 Mien emiCorp. The diode experts SCOTTSDALE, AZ SANTA ANA. CA For more information call: 602 941-6300 FEA TU R ES • • • • • • • DUAL IN-LINE SUBMINIATURE PACKAGE (DIP] MACHINE tNSERTABLE MOLDED EPOXY PACKAGE
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MILSTD-202,
MSB05,
ups numeric
numeric ups 600
MSB6
MSB05
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Untitled
Abstract: No abstract text available
Text: S EM IC O N D U C T O R PG12GBTS6 TECHNI CAL DATA TVS Diode A rray for ESD Protection in P ortable E lectronics Protection in Portable Electronics A pplications. FEA TU R ES DIM • 350 Watts peak pulse power tp=8/20//s • Transient protection for data lines to
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PG12GBTS6
8/20//s)
5/50ns)
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yg801c
Abstract: No abstract text available
Text: 1. SCOPE T h is s p e c if ic a t io n p rovid es the ra tin g s and the t e s t requirement fo r FUJI SILICON DIODE YG801C06R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown is shown It is marked to type name or abbreviated type name, p o la r it y and Lot Na
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YG801C06R
yg801c
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Untitled
Abstract: No abstract text available
Text: 1SV172 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE 1 S V 1 72 Unit in mm VHF-UHF BAND RF ATTENUATOR APPLICATIONS. + 0 .5 2 .5 -0 .3 + 0 .2 5 .1 .5 -0 .1 5 c io ES 1 + 1 2 r-lO ÖÖ + I oo +I 1C MAXIMUM RATINGS Ta = 25°C □ 3 SYMBOL RATING 50 VR 50
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1SV172
SC-59
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