Untitled
Abstract: No abstract text available
Text: YG801C06R 60V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 4.5±0.2 +0.2 -0.1 ø3.2 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2
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YG801C06R
O-22OF15)
13Min
SC-67
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Untitled
Abstract: No abstract text available
Text: YG801C09R 90V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 4.5±0.2 +0.2 -0.1 ø3.2 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2
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YG801C09R
O-22OF15)
13Min
SC-67
500ns,
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TC9010
Abstract: No abstract text available
Text: YG801C04R 40V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 +0.2 Low VF Super high speed switching. High reliability by planer design. 0.7±0.2 0.6 -0
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YG801C04R
O-22OF15)
13Min
SC-67
500ns,
TC9010
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YG801C09R
Abstract: No abstract text available
Text: YG801C09R 90V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 4.5±0.2 +0.2 -0.1 ø3.2 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2
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YG801C09R
O-22OF15)
13Min
SC-67
500ns,
YG801C09R
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YG801C04R
Abstract: TC9010
Text: YG801C04R 40V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 +0.2 Low VF Super high speed switching. High reliability by planer design. 0.7±0.2 0.6 -0
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YG801C04R
O-22OF15)
13Min
SC-67
500ns,
YG801C04R
TC9010
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Untitled
Abstract: No abstract text available
Text: YG801C10R 100V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 4.5±0.2 +0.2 -0.1 ø3.2 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2
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YG801C10R
O-22OF15)
13Min
SC-67
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Untitled
Abstract: No abstract text available
Text: YG801C06R 60V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 4.5±0.2 +0.2 -0.1 ø3.2 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2
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YG801C06R
O-22OF15)
13Min
SC-67
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YG801C06R
Abstract: No abstract text available
Text: YG801C06R 60V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 4.5±0.2 +0.2 -0.1 ø3.2 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2
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YG801C06R
O-22OF15)
13Min
SC-67
YG801C06R
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SMD Transistors w04 sot-23
Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.
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represent9-14
SMD Transistors w04 sot-23
transistor SOT-23 w04
SB050 transistor
IN4728A
mosfet SMD w04
SN30SC4
smd diode code gs1m
W01 SMD mosfet
W04 sot 23
1s355
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CAT7105CA
Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A
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5CE120C
5KE120CA
5CE120CA
5CE12A
5KE12A
5CE12C
5KE12CA
5CE12CA
CAT7105CA
mp1410es
G547E2
G547H2
G547F2
P5504EDG equivalent
G547I1
SP8K10
SP8K10SFD5TB
LD1117Al
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DIODE C06
Abstract: A408 a410 H125 YG801C06 40h12
Text: YG801C06I5A S' 3 ‘y | * +— • ü-Jfê'tfSi I O utline D raw ings SCHOTTKY BARRIER DIODE : Features ft tt BuPlfilf 3 #ifc 7Ji>*—JUK9< 7 • Insulated package by fully m olding. • ttV F Low V f ■ W S tt Connection Diagram Super high speed switching.
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YG801C06I5A)
SC-67
YG801C06
YG801
DIODE C06
A408
a410
H125
40h12
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Untitled
Abstract: No abstract text available
Text: YG801C04I5A ’• O utlin e D ra w in g s 4-7 ma». SCHOTTKY BARRIER DIODE 10.5max. ¡¿ih 2.7 1.2 Til 2.54 Features 0.7 0.6 2.7 2.54 JEDEC Insulated package by fu lly m o ld in g . SC-67 EIAJ M &V f Low V f m m & m C o n n e c tio n D ia g ra m S u p e r hig h speed s w itc h in g .
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YG801C04I5A)
SC-67
l95t/R89
Shl50
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T151
Abstract: TH25 A406
Text: YG801C04 5A SCHOTTKY BARRIER DIODE I t t J t : Features Insulated package by fully m olding. ><£Vf Low V f * U :» i' Connection Diagram Super high speed sw itching. »T V - * - a W l U S f c f S l i t t High reliability by planer design. i Applications
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YG801C0415A)
SC-67
500ns,
e3Te30S3%
I95t/R89)
T151
TH25
A406
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DIODE C04 06
Abstract: C04 06
Text: YG801C04 5A ,<' x) 7 ¥ ä '^—K MW-M^îè •Outline Drawings 4.7 max. SCHOTTKY BARRIER DIODE ] 0.5 m ax., 2.7 1.2 (H 2.54 Features • ASVft fifty ) ^ - ) V V94~7 0.7 0.6 2.54 2.7 JEDEC Insulated package by fully m olding. SC-67 EIAJ • te V F Low V f
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YG801C0415A)
500ns,
YG801
DIODE C04 06
C04 06
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YG801C09
Abstract: No abstract text available
Text: YG801C09I5A '> 3 - yh+— t - v K SCHOTTKY BARRIER DIODE • W f t : Features Insulated package by fully m o ld in g . • te V f ■ WKSIffi Low Vf C onnection Diagram Super high speed sw itchin g. • T V - * - 8 t t High reliability by planer design. r-W-iH«-n
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YG801C09I5A)
500ns,
YG801C09
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TT460
Abstract: No abstract text available
Text: YG801C06 5A : Outline Drawings SCHOTTKY BARRIER DIODE • 4 » : Features Insulated package by fu lly m oldin g. • te V F Low V f C onnection Diagram Super high speed sw itching. High reliability by planer design. ■ ffliis A p p lic a tio n s High speed pow er sw itching.
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YG801C06
TT460
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YG801C09
Abstract: TIL 413 yg801c
Text: YG801C09I5A '> 3 - yh+— t-v K SCHOTTKY BARRIER DIODE • W f t : Features Insulated package by fully m o ld in g . • te V f Low Vf ■ WKSIffi C onnection Diagram Super high speed sw itchin g. •T V - * - 8 t t r-W-iH«-n > ©<3 High reliability by planer design.
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YG801C09I5A)
500ns,
YG801C09
TIL 413
yg801c
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Fuji Electric SM
Abstract: No abstract text available
Text: X 1. SCOPE This s p e c ific a tio n provides the ratings and the te s t requirement for FUJI SILICON DIODE YG801C09R 2. POT VIEW • MARKING- MOLDING RESIN 1 Out view is shown {2) Marking is shown I t is marked to type name or abbreviated type name, p o la rity and Lot No.
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YG801C09R
Fuji Electric SM
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GIJ diode
Abstract: GGT DIODE YG801C06 A410 DIODE C06 15 iej mi
Text: YG801C06 5 a : Outline Drawings SCHOTTKY BARRIER DIODE : Features • 3i y ft i s n * 7^ - ; u ffi&i&m 7 Insulated package by fully molding. •te V F Low V f Connection Diagram Super high speed switching. • y \ s - T - ftttcj&Kfi High reliability by planer design.
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YG801C06I5A)
SC-67
I95t/R89
Shl50
GIJ diode
GGT DIODE
YG801C06
A410
DIODE C06 15
iej mi
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yg801c
Abstract: No abstract text available
Text: 1. SCOPE T h is s p e c if ic a t io n p rovid es the ra tin g s and the t e s t requirement fo r FUJI SILICON DIODE YG801C06R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown is shown It is marked to type name or abbreviated type name, p o la r it y and Lot Na
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YG801C06R
yg801c
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DIODE C04 06
Abstract: A407 yg801c
Text: YG801C04 5A ,<' x) 7 ¥ ä '^—K MW-M^îè •Outline Drawings 4.7 max. SCHOTTKY BARRIER DIODE ] 0.5 m ax., 2.7 1.2 (H 2.54 Features • ASVft fifty ) ^ - ) V V94~7 0.7 0.6 2.54 2.7 JEDEC Insulated package by fully m olding. SC-67 EIAJ • te V F Low V f
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YG801C0415A)
500ns,
YG801
DIODE C04 06
A407
yg801c
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YG801C09
Abstract: S4b0
Text: Y G 8 0 1 C O S IL A — k '> 3 y h + - / < i ; r y - f 5 r - K SCHOTTKY BARRIER DIODE • ¡H fJ l: Features Insulated package by fully m olding. Low V f C onnection D iagram S uper'high speed sw itchin g. • a * C = « # fl S tt High reliability by planer design.
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I95t/R89)
Shl50
YG801C09
S4b0
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6DI15S-050
Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140
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1D500A-030
1DI200E-055
1DI200K-055
1DI200M-120
1DI200MA-050
1DI200Z-100
1DI200Z-120
1DI200ZN-120
1DI200ZP-120
1DI300M-050
6DI15S-050
1MB1400N-120
6D130Z-120
ENC471
2sk2850
2sk2761
ESJA58-06A
1MBH-60D
1mbh60d-090a
6DI15S050
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ET412
Abstract: 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082
Text: / Discontinued Types 9. S! Descciptien / ' f ' 7 - MOSFET Power MOFET O w c o n t& n je d ty p e ItW B S W P Â R e p la c a d typ e 2SK1009 2SK1010 2SK1011 2SK1012 2SK1015 2SK2871 2SK2875 2SK2639 2SK2641 2SK2755 2SK1016 2SK1023 2SK1024 2SK1082 2SK2643 2SK2646
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2SB1532
2SC3821
2SC3822
2SC3865
2SC3886
2SC4383
2SC4507
2SC4508
2SD1726
2SD1740
ET412
2SK1217
2SK2850
ESAB92M-02N
2SK2879
2SK2765
2SK2645
2SK1916
2sk2645 MOSFET
2sk1082
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