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    DIODE EGP Search Results

    DIODE EGP Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    DIODE EGP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original     		PDF MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent

    PK MUR 460

    Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
    Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


    Original     		PDF MBR340 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 PK MUR 460 pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode

    cp4071

    Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		PDF 68B09 SN74ALS04BN SN74ALS08N SN74ALS00AN CA3046 uA733 LM311P LM318 CA3094 78H05 cp4071 data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    Untitled

    Abstract: No abstract text available
    Text: EGP30A, EGP30B, EGP30C, EGP30D, EGP30F, EGP30G www.vishay.com Vishay General Semiconductor Glass Passivated Ultrafast Plastic Rectifier FEATURES • Superectifier structure for high reliability condition SUPERECTIFIER • Cavity-free glass-passivated junction


    Original     		PDF EGP30A, EGP30B, EGP30C, EGP30D, EGP30F, EGP30G 22-B106 AEC-Q101 2002/95/EC. 2002/95/EC

    Untitled

    Abstract: No abstract text available
    Text: EGP10A, EGP10B, EGP10C, EGP10D, EGP10F, EGP10G www.vishay.com Vishay General Semiconductor Glass Passivated Ultrafast Plastic Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER


    Original     		PDF EGP10A, EGP10B, EGP10C, EGP10D, EGP10F, EGP10G DO-204AL DO-41) 22-B106 AEC-Q101

    EGP50A

    Abstract: No abstract text available
    Text: EGP50A, EGP50B, EGP50C, EGP50D, EGP50F, EGP50G www.vishay.com Vishay General Semiconductor Glass Passivated Ultrafast Plastic Rectifier FEATURES • Superectifier structure for high reliability condition SUPERECTIFIER • Cavity-free glass-passivated junction


    Original     		PDF EGP50A, EGP50B, EGP50C, EGP50D, EGP50F, EGP50G 22-B106 AEC-Q101 2002/95/EC. 2002/95/EC EGP50A

    Untitled

    Abstract: No abstract text available
    Text: EGP20A, EGP20B, EGP20C, EGP20D, EGP20F, EGP20G www.vishay.com Vishay General Semiconductor Glass Passivated Ultrafast Plastic Rectifier FEATURES • Superectifier structure for high reliability condition SUPERECTIFIER • Cavity-free glass-passivated junction


    Original     		PDF EGP20A, EGP20B, EGP20C, EGP20D, EGP20F, EGP20G DO-204AC DO-15) 22-B106 AEC-Q101

    ka3525 12v to 230v inverters circuit diagrams

    Abstract: smps circuit diagram 450w KA3525 KA3525 inverter FSD210 dip-8 KA3525A FSD200 equivalent fan7610 KA3525A application note 500w smps audio amplifier circuit diagram
    Text: AC/DC Switch Mode Power Supply Design Guide www.fairchildsemi.com AC/DC Switch Mode Power Supply Design Guide Table Of Contents Product Information Total


    Original     		PDF Power247TM, ka3525 12v to 230v inverters circuit diagrams smps circuit diagram 450w KA3525 KA3525 inverter FSD210 dip-8 KA3525A FSD200 equivalent fan7610 KA3525A application note 500w smps audio amplifier circuit diagram

    FSD210 dip-8

    Abstract: VOGT EF20 48v 2.5a charger using uc3842 12v 5a charger using uc3842 KA5H0265RC 200V Zener Diode FSD210 KA5M0380R application note KA5L0380R. Application Zener C211
    Text: FPS TM Fairchild’s Power Switch Analog Discrete Interface & Logic Optoelectronics For Switch Mode Power Supply Building Block Solutions for Multi-Market Applications Across the board. Around the world FPS ™ Design Guide Table Of Contents What is Fairchild Power Switch FPS™ .5


    Original     		PDF Power247TM, FSD210 dip-8 VOGT EF20 48v 2.5a charger using uc3842 12v 5a charger using uc3842 KA5H0265RC 200V Zener Diode FSD210 KA5M0380R application note KA5L0380R. Application Zener C211

    BY228 equivalent

    Abstract: BYD14G RU20A cross reference
    Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book Sinterglass Avalanche Diodes vishay semiconductors vSE-db0112-1009 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		PDF vSE-db0112-1009 BY228 equivalent BYD14G RU20A cross reference

    IRAC1152-350

    Abstract: International Rectifier IRAC1152-350W CV507100BS TNY278PN TNY278PN HIGH POWER resistor HMR 5W SNX-1380
    Text: 18 Feb 2011 Data Sheet No. PD97152 IRAC1152-350W Reference Design Kit for IR1152 Fixed 66kHz Frequency, One Cycle Control PFC IC with Brown-Out Protection Product Summary REFERENCE DESIGN KIT FEATURES • • • • • • • • • • IEC61000-3-2 Class D Standards Compliant


    Original     		PDF PD97152 IRAC1152-350W IR1152 66kHz IEC61000-3-2 115230VAC/350W) IRAC1152-350 International Rectifier IRAC1152-350W CV507100BS TNY278PN TNY278PN HIGH POWER resistor HMR 5W SNX-1380

    Santronics SNX 1380

    Abstract: SNX-2468-1 Transformer Santronics
    Text: 18 Feb 2011 Data Sheet No. PD97152 IRAC1152-350W Reference Design Kit for IR1152 Fixed 66kHz Frequency, One Cycle Control PFC IC with Brown-Out Protection Product Summary REFERENCE DESIGN KIT FEATURES • • • • • • • • • • IEC61000-3-2 Class D Standards Compliant


    Original     		PDF PD97152 IRAC1152-350W IR1152 66kHz IEC61000-3-2 115230VAC/350W) Santronics SNX 1380 SNX-2468-1 Transformer Santronics

    Untitled

    Abstract: No abstract text available
    Text: FAGOR a EGP50A. EGP50G 5 Amp. Glass Passivated Avalanche Ultrafast Diode Dimensions in mm. t D 0-201AD Plastic 11 Voltage 50 to 400 V. Current 5 A at 55 °C. O — 52.5 m in Mounting instructions 1. Min. distance from body to soldering point, 4 mm.


    OCR Scan     		PDF 0-201AD EGP50A. EGP50G EGP50A EGP50B EGP50D EGP50F EGP50

    EGP10D diode

    Abstract: No abstract text available
    Text: FAGOR EGP10A. EGP10G 1 Amp. Glass Passivated Avalanche Ultrafast Diode Dimensions in mm. DO-41 Plastic Voltage 50 to 400 V. Current 1 A at 55 °C. 58 .5 * 0 3 Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350 °C.


    OCR Scan     		PDF DO-41 EGP10A. EGP10G EGP10A EGP10B EGP10D EGP10F EGP10G EGP10 EGP10D diode

    EGP20B

    Abstract: No abstract text available
    Text: FAGOR EGP20A.EGP20G 2 Amp. Glass Passivated Avalanche Ultxaiast Diode Dimensions in mm. DO-15 Voltage 50 to 400 V P la stic Current 2 A at 55 °C. CO o « Ì 1 • 8 -$ ±0.3 Sfl.B min. • Glass Passivated Junction Mounting instructions 1. Min. distance from body to soldering point,


    OCR Scan     		PDF EGP20A. EGP20G DO-15 EGP20A EGP20B EGP20D EGP20F EGP20

    diode EGP 30

    Abstract: diode bym 26 diode EGP 10 diode EGP fuf 5407 diode EGP 20 diode bym BYM 26 Diode case DO41 diode do-201
    Text: KAGOR ^ U ltrafast Recovery Diode - Q uick Guide TYPE CURRENT FUF 4001 to FUF 4006 @ 55 °C EG P 10 A to E G P 10 G @ 5 5 °C E G P 20 A to EG P 20 G @ 5 5 °C FUF 5400 to FUF 5407 @ 55 °C EGP 30 A to E G P 30 G @ 5 5 °C E G P 50 A to E G P 50 G 1.0 A 1.0 A


    OCR Scan     		PDF DO-41 DO-201 -s-1000 -s400 diode EGP 30 diode bym 26 diode EGP 10 diode EGP fuf 5407 diode EGP 20 diode bym BYM 26 Diode case DO41 diode do-201

    FEP5dt

    Abstract: 1N5614 smd gi1303 GI1301 FEP16GT N645
    Text: GENL INSTR/ POUER 2SE D • 30*10137 DGG3331 T ■ FAST EFFICIENT RECTIFIERS continued 5.0 H (A) PKG TYPE c P20 64 6.0 T0-22CT CHIP G4 k > r 1Ì VRRM (volts) 1a l i l i 50 EGP50A. FE5A FEP5AT EFR5A GI1301 FE6A 100 EGP50B FE5B FEP5BT EFR5B Gl 1302 FE6B 150


    OCR Scan     		PDF DGG3331 T0-22CT EGP50A. EGP50B EGP50C EGP50D EGP50F GI1301 GI1303 GI1304 FEP5dt 1N5614 smd FEP16GT N645

    fagor fbu4 bridge rectifier

    Abstract: diode zener 600v 1a ZENER DIODE 5K diode bridge 2A 3ZX35C Zener Diode 3A zener diode 5A RGP10 diode RGP30 Diode bridge 600V 0.8A
    Text: FA G O R^ End Applications AUTOMOTIVE END APPLICATION If DEVICES USED DEVICE TYPE ALTERNATOR 3A B Y250,1N 5400, 1N5620GP G eneral Purpose Rectifier POWER STEERING 3A GP30 AM BAG 1A 1N4000GP, ESI 5KP Transient V oltage Suppressor INSTRUMENT PANEL 5KW 1A GP10, FS1


    OCR Scan     		PDF 1N5620GP 1N4000GP, 1N53S0, 1N5400, BZX85C 5390G BY39G, C1500R, 3ZX35C, fagor fbu4 bridge rectifier diode zener 600v 1a ZENER DIODE 5K diode bridge 2A 3ZX35C Zener Diode 3A zener diode 5A RGP10 diode RGP30 Diode bridge 600V 0.8A