Untitled
Abstract: No abstract text available
Text: IPA086N10N3 G TM 3 Power-Transistor Product Summary Features Q' 381>>5<>?B=1<<5F5< Q H35<<5>D71D5381B75HR 9H"[Z#@B?4E3D & V 9H ( J R ,?>=1H 0&. Y I9 ,- 6 Q.5BI<?G?> B5C9CD1>35R 9H"[Z# Q T ?@5B1D9>7D5=@5B1DEB5
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IPA086N10N3
381B75à
D1B75Dà
931D9?
CG9D389
B53D96931D9?
D85BG9C5à
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Untitled
Abstract: No abstract text available
Text: IPB065N15N3 G 3 Power-Transistor Product Summary Features Q' 381>>5<>?B=1<<5F5< Q H35<<5>D71D5381B75HR 9H"[Z#@B?4E3D & V 9H -( J R ,?>=1H-( .&- Y I9 )+( 6 Q.5BI<?G?> B5C9CD1>35R 9H"[Z#
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IPB065N15N3
381B75à
D1B75Dà
931D9?
CG9D389
B53D96931D9?
D85BG9C5à
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Untitled
Abstract: No abstract text available
Text: IPB031NE7N3 G TM 3 Power-Transistor Product Summary Features ?> Q#451<6?B89786B5AE5>3ICG9D389>71>4 3?>F5BD5BC V 9H /- J R 9H"[Z#$YMd +& Y I9 ) 6 Q H35<<5>D71D5381B75HR 9H"[Z#@B?4E3D (&
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IPB031NE7N3
B53D96931D9?
CG9D389
381B75à
D5CD54
D1B75Dà
931D9?
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LG direct drive motor
Abstract: 600v 20 amp mosfet transistor tl 11C mosfet
Text: m jg m J T f 50 AMP, 600 VOLT IGBT PLUS DIODE HALF BRIDGE POWER HYBRID 4f\* a 4 1 U 1 M.S. K EN N ED Y CORP. 315 699-9201 0170 Thompson Road •Cicero, N.Y. 13039 FEATURES: 600V, 50 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 0.21 °C/W
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4101B
MII-H-38534
LG direct drive motor
600v 20 amp mosfet
transistor tl
11C mosfet
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panasonic date code e l
Abstract: MATSUA VCO
Text: ID« % Approved « i fp Checked « pp Checked ÌB U /T Y P E & $1 jjt/S T R U C T U R E GaP ^ /O U T L IN E Ptf Condition STANDARDS K G aP /R ed Light Em itting Diode(GaP) 7F #3 / Indicators Ü 3 /Attached ^ 1 I fp IFDC Vr 70 150 25 4 mW mA mA V Topr -25 ~
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE FCQ10A04 i0A /40v FEATURES o Sim ila r to T O -2 2 0 A B C ase o F u lly M olded Isolatio n o D u a l Diodes - Cathode Comm on o L o w F orw ard V o lta g e Drop o L o w P ow er L oss, H igh E fficien cy o H igh Su rg e C apability o W ire-Bond ed technology
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FCQ10A04
FCQ10A.
bbl5153
QGG2G24
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Untitled
Abstract: No abstract text available
Text: 1N941 thru 1N946B Microsemi Corp. / SANTA ANA, CA Tftedtoáe&tpetis SCOTTSDALE, A l For more information call: 6 0 2 9 41-6300 FEA TU R ES 11.7 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • Z E N E R V O L T A G E 1 1 .7 V ± 5 % • 1N 9 4 1B , 943B, 944B. 945B HAVE J A N , J A N T X , J A N T X V , A N D -1 Q U A LIFIC A T IO N S
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1N941
1N946B
IL-S-19500/157
S1N944B
L115fib5
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Untitled
Abstract: No abstract text available
Text: A P T 1001 R 1B V F R • R A d van ced I r j po w er Te c h n o l o g y " 1000 v 11 a 1.1 ooq POWER MOS V FREDFET Pow er M OS V is a new generation o f high voltage N -C hannel enhancem ent m ode pow er M O S FE Ts. This new technolo gy m inim izes the JF E T effect,
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O-247
APT1001R1
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FDC634P
Abstract: SOIC-16 4 78G
Text: FAIRCHILD N ovem ber 1997 M IC D N D U C T D R - FDC634P P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very
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FDC634P
OT-23
FDC634P
SOIC-16
4 78G
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC OCMOS FET PS7122A-1 B,-2B, PS7122AL-1 B,-2B 6, 8-PIN DIP OCMOS FET 1-ch, 2-ch OCMOS FET DESCRIPTION The P S 7122A -1B , -2B and P S 7122A L-1B , -2B are solid state relays con tain ing a G aA s LED on the light em itting side (input side) and norm ally close (N.C.) co n ta ct M O S F E T s on the o u tp u t side.
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PS7122A-1
PS7122AL-1
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Ai203-ceramic
Abstract: oms 450 MDD250-12N1 ai203ceramic E72873 LF400A
Text: • MbfibEEb 0001721 Tbb * I X Y n ix Y S MDD250 Diode Modules ITav = 2 x 2 9 0 A VRRM= 600-1600 V V rm V|WM Type V V Version 1 700 900 1300 1500 1700 600 800 1200 1400 1600 MDD260-06N1 MDD250-08N1 MDD2S0-12N1 MDD2S0-14N1 MDD2S0-16N1 Threaded sp acer for higher Anode/
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MDD250
MDD260-06N1
MDD250-12N1
MDD2S0-14N1
MDD2S0-16N1
Ai203-ceramic
oms 450
MDD250-12N1
ai203ceramic
E72873
LF400A
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NDS9948
Abstract: No abstract text available
Text: February 1996 N NDS9948 Dual P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has
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NDS9948
NDS9948
0D33347
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Untitled
Abstract: No abstract text available
Text: DATA SHEET O C M O S FET PS7241 -1B 4-PIN SOP 400 V NORMALLY CLOSE OCMOS FET 1-ch OCMOS FET DESCRIPTION T he P S 7 2 4 1 -1 B is a solid state relay co n ta in in g a G aA s LED on the light em ittin g sid e (in pu t side) and norm ally clo se (N.C.) co n ta ct M O S F E Ts on the o u tp u t side.
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P13439EJ3V0DS00
PS7241-1B
PS7241-1B-E3
PS7241-1B-F3
PS7241-1B-E4
PS7241-1B-F4
7241-1B
PS7241
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Untitled
Abstract: No abstract text available
Text: 4bfibE2b OOO lbbl 7bl *IXY QIXYS MCC44 lTAV=2 x 49 A MCD44 vRRM= 400-1800 V Thyristor Modules Thyristor/Diode Modules > > > 500 700 900 1300 1500 1700 1900 400 600 800 1200 1400 1800 1800* Ii V r*m Vo«, V Type Version 1 B MCC44-06ÌO1 MCC44-08ÌO1 MCC44-12io1
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MCC44
MCD44
MCC44-06Ã
MCC44-08Ã
MCC44-12io1
14lo1
MCC44-18io1
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NDS8961
Abstract: No abstract text available
Text: FAIRCHILD MICDNDUCTQ R tm NDS8961 Dual N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel Features enhancement mode power field effect - 3.1 A, 30 V. Rds on = 0.1 £2 @ VGS = 10 V R dsion) = 0.15 £2 @ VGS = 4.5 V. • High density cell design for extremely low RDS(0N).
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NDS8961
NDS8961
0D33347
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785-500
Abstract: it 785-500 NDS9947
Text: F e b ru a ry 1 9 9 6 N NDS9947 Dual P-Channel Enhancement Mode Field Effect Transistor Features General Description T h e s e P -C hannel en hance m en t m ode pow er field effect tra nsistors are produced using N ational's proprietary, high cell density, D M O S technology. T h is v e ry high de nsity process is
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NDS9947
NDS9947
0D33347
785-500
it 785-500
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Untitled
Abstract: No abstract text available
Text: =Ml C O N D U C TO R PRELIMINARY tm FDD6670A N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic level M O SFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state
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FDD6670A
O-252
FDD6670A,
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Untitled
Abstract: No abstract text available
Text: CS8130 Semiconductor Corporation Multi-Standard Infrared Transceiver Features General Description • Adds IR port to standard UART • IrDA, HPSIR, ASK CW & TV remote compatible • 1200bps to 115kbps data rate • Programmable Tx LED power • Programmable Rx threshold level
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CS8130
1200bps
115kbps
CS8130
DS134PP2
254b3EM
DD07En
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cd4090
Abstract: CD 4090 datesheet CD4001N cd4001a ic cd4001 f s c datesheet J283 CD 4013 ICAN6532
Text: ICAN-6532 Fundamentals of Testing COS/MOS Integrated Circuits A typical CMOS IC test sequence is shown in Fig. 2. by J. Flood This N ote describes the techniques em ployed in testing RCA COS/MOS devices to assure their adherence to data-sheet specifi
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ICAN-6532
15-volt
20-volt
100-percent
CD4029A/B.
cd4090
CD 4090
datesheet
CD4001N
cd4001a
ic cd4001
f s c datesheet
J283
CD 4013
ICAN6532
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ULS2003
Abstract: ULS2013H883 ULS2013H-883 ULS2002 ULS2004 ULS2000 a9734 CERAMIC LEADLESS CHIP CARRIER ULS-2004 250mAT
Text: • 'im i H IG H -V O L T A G E , H IG H -C U B K E \ T D A B U N G T O N A BRA X S Comprised of seven silicon NPN Darlington power drivers on a common monolithic substrate, Series ULS2000EK, ULS2000H, and ULS2000R arrays drive relays, solenoids, magnetic print hammers,
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ULS20XXH/R
ULS200X*
ULS201X*
ULS202X*
ULS20X2*
ULS20X5*
ULS2003
ULS2013H883
ULS2013H-883
ULS2002
ULS2004
ULS2000
a9734
CERAMIC LEADLESS CHIP CARRIER
ULS-2004
250mAT
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Untitled
Abstract: No abstract text available
Text: 7*^ 12 4 3 TRANSISTOR MODULE 00021 37 4AA QCA30B/QCB3QA40/60 UL;E76102(M QCA30B and QCB30A are dual Darlin 94max gton power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode.
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QCA30B/QCB3QA40/60
E76102
QCA30B
QCB30A
94max
400/600V
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KT853
Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
Text: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN
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1N5722
1N5723
1N5724
1N5725
1N6264
1N6265
1N6266
2004-90xx
3N24x
24xTX
KT853
KT850
KT853A
LTR-305D
H0A0872-n55
H0A1405-1
h0a2001
MOC70T3
HOA708-1
smd diode 825B
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fds6930
Abstract: No abstract text available
Text: F/\IRCHII_0 M IC D N D U C T O R July 1998 tm FDS6930A Dual N-Channel, Logic Level, PowerTrench MOSFET G eneral D escription Features These N-Channel Logic Level MOSFETs are produced using Fairchild Sem iconductor's advanced PowerTrench process that has been
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FDS6930A
fds6930
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Complementary MOSFET Half Bridge
Abstract: NDS8858H
Text: J u ly 1 9 9 6 N NDS8858H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide
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NDS8858H
NDS8858H
0D33347
Complementary MOSFET Half Bridge
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