Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NDS8961 Search Results

    SF Impression Pixel

    NDS8961 Price and Stock

    onsemi NDS8961

    - Bulk (Alt: NDS8961)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas NDS8961 Bulk 4 Weeks 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Fairchild Semiconductor Corporation NDS8961

    3.1 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components NDS8961 2,950
    • 1 $0.9789
    • 10 $0.9789
    • 100 $0.9789
    • 1000 $0.4079
    • 10000 $0.3589
    		Buy Now
    Rochester Electronics NDS8961 551 1
    • 1 $0.5119
    • 10 $0.5119
    • 100 $0.4812
    • 1000 $0.4351
    • 10000 $0.4351
    		Buy Now
    ComSIT USA NDS8961 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    NDS8961 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NDS8961 Fairchild Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS8961 Fairchild Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS8961 National Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS8961 National Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS8961 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDS8961 Fairchild Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Scan PDF

    NDS8961 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NDS8961

    Abstract: No abstract text available
    Text: N February 1997 NDS8961 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored


    Original     		PDF NDS8961 NDS8961

    NDS8961

    Abstract: No abstract text available
    Text: June 1997 NDS8961 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDS8961 NDS8961

    NDS8961

    Abstract: No abstract text available
    Text: June 1997 NDS8961 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDS8961 NDS8961

    NDS8961

    Abstract: No abstract text available
    Text: N September 1996 ADVANCE INFORMATION NDS8961 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    Original     		PDF NDS8961 78oC/W 125oC/W 135oC/W NDS8961

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS9953A L86Z NDS8961
    Text: June 1997 NDS8961 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDS8961 CBVK741B019 F011 F63TNR F852 FDS9953A L86Z NDS8961

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    HTGB

    Abstract: FDS*35A FDS*6609A fds4559 fds5680 FDS3670 FDS369 FDS4935A FDS6675A fds6912
    Text: Date Created: 1/23/2004 Date Issued: 2/13/2004 PCN # 20040403 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		PDF fairchil936 BNY001A SI4412DY SI4425DY SI4450DY SI4467DY SI4539DY SI4835DY SI4920DY SI4953DY HTGB FDS*35A FDS*6609A fds4559 fds5680 FDS3670 FDS369 FDS4935A FDS6675A fds6912

    ss8050 d 331

    Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
    Text: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34

    NDS8961

    Abstract: No abstract text available
    Text: FAIRCHILD MICDNDUCTQ R tm NDS8961 Dual N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel Features enhancement mode power field effect - 3.1 A, 30 V. Rds on = 0.1 £2 @ VGS = 10 V R dsion) = 0.15 £2 @ VGS = 4.5 V. • High density cell design for extremely low RDS(0N).


    OCR Scan     		PDF NDS8961 NDS8961 0D33347

    Untitled

    Abstract: No abstract text available
    Text: FAIRCHILD S E M IC G N D U C T O R NDS8961 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 - N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell 3.1 A ,3 0 V .R DS ON = 0 . 1 0 @ V gs = 1 0 V


    OCR Scan     		PDF NDS8961

    Untitled

    Abstract: No abstract text available
    Text: R A I R C H I I - D Jun e 1 9 9 7 M ICDNDUCTO R ^ NDS8961 Dual N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel Features enhancement mode power field effect - 3.1 A, 30 V. Rds on = 0.1 £2 @ VGS = 10 V R dsion) = 0.15 £2 @ VGS = 4.5 V.


    OCR Scan     		PDF NDS8961 NDS8961 193tQ

    601lt

    Abstract: Complementary MOSFET Half Bridge NDS351AN MDs9933 NDS331N NDS356 NDS9936 NDS9952A FDV302P
    Text: Discrete Power and Signal Technologies Fairchild Sem iconductor Selection Guides Surface Mount Power MOSFETs Part Num ber v 3S IV _ J « L 'd A) _ " P i ' I I ' (W ) ¡Remarks P art V0S Num ber (V) iV t M » W w t u iv * » 45V Id (A) 2IV i Po j (W ) I Remarks |


    OCR Scan     		PDF S8426A* NQS8426t NDS8425 NDS8926 NDS9925A NDS8410A NDS8410Î NDS9410A NOS8936 NDS9936 601lt Complementary MOSFET Half Bridge NDS351AN MDs9933 NDS331N NDS356 NDS9952A FDV302P