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    APT1001R1 Price and Stock

    Microchip Technology Inc APT1001R1BN

    MOSFET N-CH 1000V 10.5A TO247AD
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    DigiKey APT1001R1BN Tube
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    Microchip Technology Inc APT1001R1AN

    Transistor MOSFET N-Channel 1000V 9.5A 3-Pin TO-3 - Bulk (Alt: APT1001R1AN)
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    Avnet Americas APT1001R1AN Bulk 52 Weeks 100
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    Microsemi Corporation APT1001R1AN

    9.5 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
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    Quest Components APT1001R1AN 19
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    Advanced Power Technology APT1001R1AN

    9.5 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
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    Quest Components APT1001R1AN 11
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    Microchip Technology Inc APT1001R1BNG

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    APT1001R1 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT1001R1AVR Advanced Power Technology POWER MOS V 1000V 9A 1.100 Ohm Original PDF
    APT1001R1AVR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT1001R1BN Advanced Power Technology N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET Original PDF
    APT1001R1BN Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 1000V 10.5A TO247AD Original PDF
    APT1001R1BNR Advanced Power Technology High Voltage Power MOSFETs Scan PDF
    APT1001R1BVFR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT1001R1DN Advanced Power Technology APT Power MOS IV Commercial and Custom DIE Scan PDF
    APT1001R1HN Advanced Power Technology High Voltage Power MOSFETs Scan PDF
    APT1001R1HVR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT1001R1HVR Unknown High Voltage, 1000V 8.4A, MOS-FET N-Channel enhanced Original PDF
    APT1001R1SN Advanced Power Technology Power MOS IV Scan PDF

    APT1001R1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TO-204AE Package

    Abstract: No abstract text available
    Text: APT1001R1AVR OPERATION HERE LIMITED BY RDS ON 10µS 11,000 100µS 5,000 10 C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 40 5 1mS 1 10mS .5 TC =+25°C TJ =+150°C SINGLE PULSE .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE


    Original     		PDF APT1001R1AVR 100mS O-204AE) TO-204AE Package

    TO-258

    Abstract: d 434
    Text: APT1001R1HVR OPERATION HERE LIMITED BY RDS ON 10µS 11,000 100µS 5,000 10 C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 40 5 1mS 1 10mS .5 TC =+25°C TJ =+150°C SINGLE PULSE 50 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE


    Original     		PDF APT1001R1HVR 100mS O-258 TO-258 d 434

    Untitled

    Abstract: No abstract text available
    Text: APT1001R1BFLC 1000V POWER MOS VITM 11A 1.100W FREDFET Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.


    Original     		PDF APT1001R1BFLC O-247 O-247 APT1001R1BFLC

    Untitled

    Abstract: No abstract text available
    Text: APT1001R1HVR 9A 1.100Ω 1000V POWER MOS V TO-258 V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT1001R1HVR O-258 O-258

    APT1001R1HVR

    Abstract: No abstract text available
    Text: APT1001R1HVR Ω 8.4A 1.200Ω 1000V POWER MOS V TO-258 V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT1001R1HVR O-258 O-258 APT1001R1HVR

    APT1001R1AVR

    Abstract: No abstract text available
    Text: APT1001R1AVR 9A 1.100Ω 1000V POWER MOS V TO-3 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT1001R1AVR O-204AE) APT1001R1AVR

    1001RBN

    Abstract: 1001R3BN 1001rb APT1001R3BN APT1001R1BN
    Text: D TO-247 G APT1001R1BN 1000V 10.5A 1.10Ω S POWER MOS IV APT1001R3BN 1000V 10.0A 1.30Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage


    Original     		PDF O-247 APT1001R1BN APT1001R3BN 1001RBN 1001R3BN O-247AD 1001RBN 1001R3BN 1001rb

    Untitled

    Abstract: No abstract text available
    Text: APT1001R1AVR 1000V 9A 1.100W POWER MOS V TO-3 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT1001R1AVR O-204AE)

    APT1001R1HN

    Abstract: APT1001R3HN APT901R1HN APT901R3HN
    Text: A DVANCE D POUER T EC H N O L OG Y b lE D • A D 02S7101 V A N DDOOBäl C E M43 H A V P D POW ER Te c h n o l o g y * APT1001R1HN APT901R1HN APT1001R3HN APT901R3HN POWER MOS IV 1000V 900V 1000V 900V 9.5A 9.5A 9.0A 9.0A 1.10Q 1.10Q 1.30Q 1.30Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan     		PDF 02S11 APT1001R1HN APT901R1HN APT1001R3HN APT901R3HN 901r1hn 1001r1hn 901r3hn 1001r3hn HGURE13,

    Untitled

    Abstract: No abstract text available
    Text: APT1001R1HVR ADVANCED POW ER Te c h n o l o g y 1000V 9A 1.1000 POWER MOSV Power MOSV® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT1001R1HVR O-258 APT1001R1HVR

    443h

    Abstract: No abstract text available
    Text: ADVANCED POWER TECHNOLOGY . . « o „ , tm POWER MOS IV blE D • QSSTTOS 443 H A V P ADVANCED P o w er Te c h n o l o g y APT1001R1HN APT901R1HN APT1001R3HN APT901R3HN 1000V 900V 1000V 900V 9.5A 1.10Q 9.5A 1.1 OQ 9.0A 1.30Q 9.0A 1.30D N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan     		PDF APT1001R1HN APT901R1HN APT1001R3HN APT901R3HN 901R1HN 1001R1HN 901R3HN 1001R3HN LinearPT1001R1/1001R3HN RGURE11, 443h

    APT1001R1AN

    Abstract: APT1001R3AN
    Text: AT>VANCFT> POUFR TECHNOLOGY 0 2 5 7 1 0 1 O O O O M I b 424 M A V P HIE î ADVANCED P o w er Te c h n o l o g y APT1001R1AN 1000V 9.5A 1.10 £i APT901R1 AN 900V 9.5A 1.10 Q. APT1001R3AN 1000V 8.5A 1.30 £2 POWER MOS IV APT901R3AN 900V 8.5A 1.30 n N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan     		PDF APT1001R1AN APT901R1 APT1001R3AN APT901R3AN 901R1AN 1001R1 901R3AN 1001R3AN O-204AA)

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED POW ER Te c h n o l o g y APT1001R1SN 1000V 10.5A 1.1 Ofl POWER MOS IV' N-CH A NN EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V D SS >D All Ratings: T c = 25°C unless otherwise specified. Parameter APT1001R1SN UNIT Drain-Source Voltage


    OCR Scan     		PDF APT1001R1SN APT1001R1SN

    APT1001R1BNR

    Abstract: 1001R1
    Text: A dvanced P ow er Te c h n o lo g y O ü * 'W APT1001RBNR 1000V 11.0A 1.00U APT1001R1BNR 1000V 10.5A 1.100 S t R m o s AVALANCHE RATED r ® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd ^DM V GS V GSM PD V sTG All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT1001RBNR APT1001R1BNR 001R1Ö -100m O-247AD 1001R1

    1001r1bn

    Abstract: 130Q APT1001R3BN diode 1000V
    Text: ADVANCED PO W ER Te c h n o lo g y O D O S POWER MOS IV® APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 1000V 900V 1000V 900V 10.5A 10.5A 10.0A 10.0A 1.100 1.10Q 1.30Q 1.300 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T „ = 25°C unless otherwise specified.


    OCR Scan     		PDF APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 901R1BN 1001R1BN 901R3BN 1001R3BN O-247AD 130Q diode 1000V

    Untitled

    Abstract: No abstract text available
    Text: O A dvanced P o w er Te c h n o lo g y D APT1001R1BN 1000V 10.5A 1.10Í2 APT901R1BN 900V 10.5A 1.10D APT1001R3BN 1000V 10.0A 1.30Q APT901R3BN 900V 10.0A 1.30Q O S POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 901R1BN 1001R1BN 901R3BN 1001R3BN APT1001R1/901R1/1001R3/901R3BN O-247AD

    Untitled

    Abstract: No abstract text available
    Text: A d va n ced P o w er Te c h n o l o g y O D APT1001RBNR 1000V 11.0A 1.0012 APT1001R1BNR 1000V 10.5A 1.100 O S POWER MOS IV® AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIMUM RATINGS Symbol All Ratings: T c = 2 5 °C unless otherwise specified.


    OCR Scan     		PDF APT1001RBNR APT1001R1BNR APT1001RBNR APT1001R1BNR APT1001R/1001R1BNR O-247AD 0001S7T

    APT1001RBNR

    Abstract: No abstract text available
    Text: A d van ced P o w er Te c h n o l o g y • O D O S APT1001RBNR 1000V 11.0A 1.000 APT1001R1BNR 1000V 10.5A 1.10D POWER MOS IV< UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS 'd ' dm V GS VGSM PD All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT1001RBNR APT1001R1BNR APT1001R/1001R1BNR O-247AD

    APT901R3BN

    Abstract: APT1001R3BN
    Text: O D Ô s A d van ced P o w er Te c h n o l o g y GIí'WtH MOS iUä APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 1000V 900V 1000V 900V 10.5A 10.5A 10.0 A 10.0A 1.100 1.100 1.300 1.300 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS


    OCR Scan     		PDF APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 901R1BN /1001R3BN O-247AD

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED P ow er Te c h n o l o g y ' OD APT1001R1BN 1000V 10.5A 1.1 Oil OS APT1001R3BN 1000V 10.0A 1.30Í2 POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS b All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT1001R1BN APT1001R3BN 1001RBN 1001R3BN 150VOLTAGE APT1001R1/1001R3BN O-247AD

    APT1004RGN

    Abstract: No abstract text available
    Text: APT HERMETIC MOSFET PRODUCTS BV DSS Volts 1000 800 600 500 4UC 1000 800 R ds o n Ohms lD(Cont.) CiSS(pF) Qg(nC) A PT New Product Package Am ps Watts Typ Typ Part No. Comments Style 1.100 1.300 9.5 250 2460 90 APT1001R1HN 90 250 2460 90 APT1001R3HN 0.750


    OCR Scan     		PDF APT5011AFN APT40M 80AFN APT1004RGN

    APT1001R1BN

    Abstract: APT901R1BN 1001R3BN 1001r1bn
    Text: A d v a n ced ROW ER Te c h n o l o g y o D O S POWER MOS IV< APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 1000V 900V 1000V 900V 10.5 A 10.5 A 10.0A 10.0 A 1.10Q 1.10Q 1.3012 1.30Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T c = 25°C unless otherwise specified.


    OCR Scan     		PDF APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 901R1BN 1001R1 901R3BN 1001R3BN 100mS APT10 1001r1bn

    210 RBN

    Abstract: 1001r1bn 1001RBN NA 1001 APT1001RBNR OA 10 diode APT1001 APT1001R1BNR 1001R1BNR
    Text: ADVANCED P o w er Te c h n o l o g y O D O S APT1001RBNR 1000V 11.0A 1.00Q APT1001R1BNR 1000V 10.5A 1.10ÍÍ POWER MOS IV® AVALANCHE RATED N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIMUM RATINGS Symbol VDSS •d ' dm V GS VGSM PD t j ,t stg


    OCR Scan     		PDF APT1001RBNR APT1001R1BNR O-247AD 210 RBN 1001r1bn 1001RBN NA 1001 OA 10 diode APT1001 1001R1BNR

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P ow er Te c h n o lo g y * O D APT1001R1SN O s 1000V 10.5A 1.1 OQ POWER MOS IV N -C H A N N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified. Parameter APT1001R1SN UNIT Drain-Source Voltage


    OCR Scan     		PDF APT1001R1SN