Untitled
Abstract: No abstract text available
Text: Data sheet 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Marking Business data Supplier WAGO Supplier part no.
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1N5408
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR E65A27VBS, E65A27VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES 2004. 3. 11 Revision No : 2 1/1
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E65A27VBS,
E65A27VBR
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR E65A2CBS, E65A2CBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES 2004. 3. 11 Revision No : 0 1/1
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E65A2CBS,
E65A2CBR
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KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
KIA78*pI
transistor
KIA78*p
TRANSISTOR 2N3904
khb*9D5N20P
khb9d0n90n
KID65004AF
TRANSISTOR mosfet
KIA7812API
khb*2D0N60P
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khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
khb*9D5N20P
khb9d0n90n
6v Zener diode
khb*2D0N60P
transistor
KHB7D0N65F
BC557 transistor
kia*278R33PI
KHB9D0N90N circuit
ktd998 transistor
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR E65A2CBS, E65A2CBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A ・Average Forward Current : IO=65A. POLARITY E65A2CBS + Type E65A2CBR (- Type) K H MAXIMUM RATING (Ta=25℃) CHARACTERISTIC
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E65A2CBS,
E65A2CBR
E65A2CBS
35ING
100mA,
100mS
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR E65A2CBS, E65A2CBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A Average Forward Current : IO=65A. POLARITY E65A2CBS + Type E65A2CBR (- Type) K H MAXIMUM RATING (Ta=25 CHARACTERISTIC ) E I
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E65A2CBS,
E65A2CBR
E65A2CBS
100mA,
100mS
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E65A27VBR
Abstract: E65A27VBS 20v zener diode
Text: SEMICONDUCTOR E65A27VBS, E65A27VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A Average Forward Current : IO=65A. Zener Voltage : 27V Typ. POLARITY E65A27VBS (+ Type) E65A27VBR (- Type) K H MAXIMUM RATING (Ta=25
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E65A27VBS,
E65A27VBR
E65A27VBS
100mA,
100mS
E65A27VBR
E65A27VBS
20v zener diode
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alternator diode
Abstract: 20v zener diode
Text: SEMICONDUCTOR E65A21VBS, E65A21VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A Average Forward Current : IO=65A. Zener Voltage : 21V Typ. POLARITY E65A21VBS (+ Type) E65A21VBR (- Type) K H MAXIMUM RATING (Ta=25
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E65A21VBS,
E65A21VBR
E65A21VBS
100mA,
100mS
alternator diode
20v zener diode
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR E65A21VBS, E65A21VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A Average Forward Current : IO=65A. Zener Voltage : 21V Typ. POLARITY E65A21VBS (+ Type) E65A21VBR (- Type) K H MAXIMUM RATING (Ta=25
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E65A21VBS,
E65A21VBR
E65A21VBS
100mA,
100mS
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR E65A37VBS, E65A37VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A Average Forward Current : IO=65A. Zener Voltage : 37V Typ. POLARITY E65A37VBS (+ Type) E65A37VBR (- Type) K H MAXIMUM RATING (Ta=25
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E65A37VBS,
E65A37VBR
E65A37VBS
100mA,
100mS
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2835 diode
Abstract: 32V zener
Text: SEMICONDUCTOR E65A37VBS, E65A37VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A Average Forward Current : IO=65A. Zener Voltage : 37V Typ. POLARITY E65A37VBS (+ Type) E65A37VBR (- Type) K H MAXIMUM RATING (Ta=25
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E65A37VBS,
E65A37VBR
E65A37VBS
100mA,
100mS
2835 diode
32V zener
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alternator diode
Abstract: E65A27VBR E65A27VBS
Text: SEMICONDUCTOR E65A27VBS, E65A27VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A Average Forward Current : IO=65A. Zener Voltage : 27V Typ. POLARITY E65A27VBS (+ Type) E65A27VBR (- Type) K H MAXIMUM RATING (Ta=25
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E65A27VBS,
E65A27VBR
E65A27VBS
100mA,
100mS
alternator diode
E65A27VBR
E65A27VBS
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR E65A27VBS, E65A27VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A ・Average Forward Current : IO=65A. ・Zener Voltage : 27V Typ. POLARITY E65A27VBS (+ Type) E65A27VBR (- Type) K H MAXIMUM RATING (Ta=25℃)
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E65A27VBS,
E65A27VBR
E65A27VBS
100mA,
100mS
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mo299
Abstract: TAC10 lt416 LHS01
Text: LM96063 Remote Diode Digital Temperature Sensor with Integrated Fan Control General Description • Integrated PWM fan speed control output supports high The LM96063 is remote diode temperature sensors with integrated fan control that includes remote diode sensing. The
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LM96063
2N3904,
mo299
TAC10
lt416
LHS01
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PDM5001
Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
Text: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH
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C3557
PH1503
PH150
PDM5001
PDT400N16
pah60n8cm
PHMB50E6CL
PHT250N16
PHT400N16
PD100KN16
PAH100N8CM
PT76S16
PAT400N16
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BCS028N06NS
Abstract: 028N06NS DC1502
Text: DEMO MANUAL DC1502A LTC4359HDCB 12V/20A Ideal Diode with Reverse Input Protection DESCRIPTION Demonstration circuit 1502A showcases the LTC 4359 ideal diode controller with reverse input protection. The board includes two independent LTC4359 ideal diode circuits, sharing a common ground and operating over a
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DC1502A
LTC4359HDCB
2V/20A
LTC4359
dc1502af
BCS028N06NS
028N06NS
DC1502
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S12 MARKING DIODE
Abstract: S12 MARKING CODE DIODE SOD882 BAP55L
Text: BAP55L Silicon PIN diode Rev. 01 — 5 April 2005 Preliminary data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882 leadless ultra small plastic SMD package. 1.2 Features • High speed switching for RF signals ■ Low diode capacitance
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BAP55L
OD882
sym006
S12 MARKING DIODE
S12 MARKING CODE DIODE
SOD882
BAP55L
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Elantec Laser Diode Driver
Abstract: Laser
Text: EL6918 Product Brief Laser Diode Driver with Waveform Generator The EL6918 is a highly integrated laser diode driver designed to support multi-standard writable optical drives. It accomplishes this by incorporating a waveform generator wherein the diode currents and timing details can be
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EL6918
FN7237
EL6918
Elantec Laser Diode Driver
Laser
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Untitled
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH03G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
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IDH03G65C5
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diode G21
Abstract: marking G21 Z5 LD4RA BZX84-C27 BZX84C18 g21 Transistor BZX84C3V0 BZX84 BAV74 BAV99
Text: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C ambient temperature Max. Type FM MD914 HD3A BAV70 BAV74 HD2A BAV99 BAW 56 HD4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith
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FMMD914
BAV70
BAV74
BAV99
BAW56
100mA
diode G21
marking G21 Z5
LD4RA
BZX84-C27
BZX84C18
g21 Transistor
BZX84C3V0
BZX84
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diode Lz 66
Abstract: diode LZ. 58 BZX84C20 BZX84-C27 diode marking w8 BZX84-C5V1 BZX84C18 FMMD914 diode marking x6 BZX84-C15
Text: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C am bient tem perature Max. Type FM MD914 HD3A BAV70 BAV74 HD 2A BAV99 BAW 56 HD 4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith
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FMMD914
BAV70
BAV74
BAV99
BAW56
100mA
BZX84
FMMD3102
BZX84-C3V0
BZX84-C3V3
diode Lz 66
diode LZ. 58
BZX84C20
BZX84-C27
diode marking w8
BZX84-C5V1
BZX84C18
diode marking x6
BZX84-C15
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11-5B2
Abstract: E67349 TLP722 TLP722F VDE0884
Text: TO SH IBA TENTATIVE TLP722 TOSHIBA PHOTOCOUPLER PHOTO-DIODE TLP722 The TOSHIBA TLP722 consists of a photo-diode optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP DIP4 . TLP722 : Single circuit 30 V (max) Cathode-Anode Voltage
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TLP722
TLP722
UL1577,
E67349
VDE0884
VDE0884
EN60950,
11-5B2
E67349
TLP722F
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11-5B2
Abstract: E67349 TLP722 TLP722F VDE0884
Text: TO SH IBA TENTATIVE TLP722 TOSHIBA PHOTOCOUPLER PHOTO-DIODE TLP722 Unit in mm The TOSHIBA TLP722 consists of a photo-diode optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP DIP4 . 4 3 5LJZ JJ lU TLP722 : Single circuit
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TLP722
TLP722
UL1577,
E67349
VDE0884
VDE0884
EN60950,
11-5B2
E67349
TLP722F
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