smd dual diode code 68
Abstract: B10 zener diode DIODE ZENER smd marking 72 marking code br 37 SMD sot23 Zener diode smd marking code w1 kdn 010 Zener diode smd marking code .18 SOT23 ZENER DIODE 5.1V smd Zener diode smd marking code 91 marking code 153 DIODE sod 23
Text: AZ23C2V7-AZ23C51 300mW, Dual SMD Zener Diode Small Signal Diode SOT-23 A Features F B E Wide zener voltage range selection : 2.7V to 51V VZ Tolerance ≦ ±5% C Moisture sensitivity level 1 D Matte Tin Sn lead finish Pb free version and RoHS compliant
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AZ23C2V7-AZ23C51
300mW,
OT-23
OD-123
MIL-STD-202,
C/10s
smd dual diode code 68
B10 zener diode
DIODE ZENER smd marking 72
marking code br 37 SMD sot23
Zener diode smd marking code w1
kdn 010
Zener diode smd marking code .18 SOT23
ZENER DIODE 5.1V smd
Zener diode smd marking code 91
marking code 153 DIODE sod 23
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2N3904
Abstract: MO-001 TIL3009 TIL3010 TIL3011 TIL3012 E65085
Text: TIL3009, TIL3010, TIL3011, TIL3012 OPTOCOUPLERS/OPTOISOLATORS SOES027A – DECEMBER 1987 – REVISED APRIL 1998 D D D D D D 250-V Phototriac Driver Output Gallium-Arsenide-Diode Infrared Source and Optically-Coupled Silicon Triac Driver Bilateral Switch
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TIL3009,
TIL3010,
TIL3011,
TIL3012
SOES027A
E65085
115-Vac
TIL30xx
2N3904
MO-001
TIL3009
TIL3010
TIL3011
TIL3012
E65085
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5082-0012
Abstract: hydrofluoric acid
Text: PIN Diode Chips for Hybrid MIC Switches/Attenuators Technical Data 5082-0001 5082-0012 Features • Low Series Resistance 0.8 Ω Typical • Nitride Passivated Outline 01B 5082-0001 ALL OTHER CHIPS D D X X Description These PIN diode chips are silicon dioxide or nitride passivated. The
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5965-8880E
5082-0012
hydrofluoric acid
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5082-0001
Abstract: 5082-3041 equivalent
Text: PIN Diode Chips for Hybrid MIC Switches/Attenuators Technical Data 5082-0001 5082-0012 Features • Low Series Resistance 0.8 Ω Typical • Nitride Passivated Outline 01B 5082-0001 ALL OTHER CHIPS D D X X Description These PIN diode chips are silicon dioxide or nitride passivated. The
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5965-8880E
5082-0001
5082-3041 equivalent
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MOC3011
Abstract: MOC3012 2N3904 MO-001 MOC3009 MOC3010
Text: MOC3009 THRU MOC3012 OPTOCOUPLERS/OPTOISOLATORS SOES024A – AUGUST 1985 – REVISED APRIL 1998 D D D D D D D 250 V Phototriac Driver Output Gallium-Arsenide-Diode Infrared Source and Optically Coupled Silicon Traic Driver Bilateral Switch UL Recognized . . . File Number E65085
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MOC3009
MOC3012
SOES024A
E65085
MOC3009,
MOC3010,
MOC3011,
115-Vac
MOC30209
MOC3011
MOC3012
2N3904
MO-001
MOC3010
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D4457N
Abstract: 4336 326.4 D2228N D448N D5807N D758N 4807
Text: Sperr - Diode + Gleichspannung Sperrspannung Bauelement VRRM 100 V 200 V 400 V 200 V 400 V 800 V - Kühlblöcke für Wasserkühlung Temp. tA Gleichstrom Verlustl. P d Id Schaltung Wasser men. vL pro KB Diode D Thyristor T Kühlblock KB [ltr/min] Anzahl KB pro
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D448N
D758N
D2228N
D4457N
D5807N
D4457N
4336
326.4
D2228N
D448N
D5807N
D758N
4807
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Untitled
Abstract: No abstract text available
Text: MOC3009 THRU MOC3012 OPTOCOUPLERS/OPTOISOLATORS SOES024A – AUGUST 1985 – REVISED APRIL 1998 D D D D D D D 250 V Phototriac Driver Output Gallium-Arsenide-Diode Infrared Source and Optically Coupled Silicon Traic Driver Bilateral Switch UL Recognized . . . File Number E65085
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MOC3009
MOC3012
SOES024A
E65085
MOC3009,
MOC3010,
MOC3011,
115-Vac
MOC30209â
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BAV170LT1
Abstract: No abstract text available
Text: MOTOROLA Order this document by BAV170LT1/D SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode BAV170LT1 Motorola Preferred Device This switching diode has the following features: • Low Leakage Current Applications • Medium Speed Switching Times
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BAV170LT1/D
BAV170LT1
BAV170LT1
BAV170LT3
inch/10
236AB)
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MMBD1005LT1
Abstract: MMBD2005T1 MMBD3005T1 SMD310
Text: MOTOROLA Order this document by MMBD1005LT1/D SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features:
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MMBD1005LT1/D
MMBD1005LT1
MMBD2005T1
MMBD3005T1
MMBD1005LT1
MMBD2005T1
MMBD3005T1
SMD310
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marking JY sot-23
Abstract: BAV199 marking 8b sot-23 RESISTOR footprint dimension JY marking transistor BAV199LT1 BAV199LT3
Text: MOTOROLA Order this document by BAV199LT1/D SEMICONDUCTOR TECHNICAL DATA BAV199LT1 Dual Series Switching Diode Motorola Preferred Device This switching diode has the following features: • Low Leakage Current Applications • Medium Speed Switching Times
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BAV199LT1/D
BAV199LT1
BAV199LT1
BAV199LT3
inch/10
236AB)
marking JY sot-23
BAV199
marking 8b sot-23
RESISTOR footprint dimension
JY marking transistor
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MMBD1000
Abstract: MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 SMD310 marking 8b sod-123
Text: MOTOROLA Order this document by MMBD1000LT1/D SEMICONDUCTOR TECHNICAL DATA MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features:
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MMBD1000LT1/D
MMBD1000LT1
MMBD2000T1
MMBD3000T1
MMSD1000T1
OT-23
O-236AB)
MMBD1000
MMBD1000LT1
MMBD2000T1
MMBD3000T1
MMSD1000T1
SMD310
marking 8b sod-123
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MGY40N60D
Abstract: motorola 6810
Text: MOTOROLA Order this document by MGY40N60D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY40N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
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MGY40N60D/D
MGY40N60D
IGBTMGY40N60D/D
MGY40N60D
motorola 6810
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Untitled
Abstract: No abstract text available
Text: A S E A BROUN/ABB SEMICON A3 Netz-Thyristor-Diode-M odule d " | □ □ 4 0 3 0 Û O O O D l l ] ^ t~ r-Z 5 -Z 3 Phase control Thyristor-Diode-M odules Daten pro Diode oder Thyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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FMMD6050
Abstract: FMMD914 BAW* diode BAL99 BAR99 BAV70 BAV74 BAV99 ZC830A ZC831A
Text: SOT 23 TRANSISTORS & DIODES SELECTIO N GUIDE SILICO N P LA N A R HIGH SP EED SW ITCH IN G D IO D ES Rat ings Description Type B A S 16 FMMD914 HD3A BA L99 BA R99 FMMD6050 BAV70 BAV74 HD2A BAV99 BA W S6 HD4A Single diode Single diode Single diode Single diode
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FMMD914
BAL99
BAR99
FMMD6050
BAV70
BAV74
BAV99
C9/C20
50MHz
ZC830A
BAW* diode
ZC831A
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Untitled
Abstract: No abstract text available
Text: D IO D E M O D U L E DD200HB Power Diode Module D D 200H B series are designed for various rectifier circuits. D D 200H B has two diode chips connected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up to 1,600 V
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DD200HB
E76102
M8X14
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ad130
Abstract: D1103 d1105 MMAD1109 AD1107
Text: MOTOROLA Order this document by MMAD130/D SEMICONDUCTOR TECHNICAL DATA M onolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high-current, fast-switching
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MMAD130/D
AD1105
AD1107
ad130
D1103
d1105
MMAD1109
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BAV74
Abstract: DIN 3015
Text: BAV74 Silicon planar twin-diode The silicon planar tw in -d io d e BAV 74 in the minature plastic case 23 A 3 DIN 41869 S O T -23 is suitable fo r use as high-speed s w itch in g diode in film circuits. The diode is coded JA. The stated data apply fo r any diode system, unless otherw ise
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BAV74
OT-23)
Q62702-A
Utt05
03S1-
Tota12
BAV74
DIN 3015
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diode cross reference
Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Text: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE
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MA40401
MA40402
MA40404
MA40405
MA40406
MA40408
diode cross reference
schottky diode cross reference
MV3110
AH513
AH761
AH512
impatt diode
Gunn Diode
AH370
DMK-6606
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LED pigtailed
Abstract: Diode PH 13M
Text: M itsubishi O ptical D e vice C la ssifica tio n Item LD modules Wave length •1.3jum/1.55j«m Laser diode •0.98um/1.48Mm for pump Laser diode •InGaAs-PIN Photo diode •InGaAs-APO Photo diode •active diameter ¿20/* m ~«4300^m Device Package •TO CAN, Chip-on-Carrier
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STM-4/OC-12,
LED pigtailed
Diode PH 13M
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dl520
Abstract: No abstract text available
Text: N E C ELECTRONICS INC bEE J> • bM27SES DQ3ä071 510 ■ ! NECE DATA SHEET N EC ELECTRON DEVICE PHOTO DIODE NDL5102 1 3 0 0 nm OPTICAL FIBER COMMUNICATIONS 0 3 0 /mi GERMANIUM AVALANCHE PHOTO DIODE DESCRIPTION N D L 5 10 2 is a Germanium Avalanche Photo diode especially designed fo r a detector of long wavelength fiber transmission
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bM27SES
NDL5102
L427SES
NDL5102
NDL5102C
DL5200
NDL5100
NDL5100C
NDL5100P*
dl520
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G W 12N 120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T O -2 4 7
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MGW12N120D/D
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IN747
Abstract: in5253 zener diode in5247 zener diode THZ010A10 in750 diode IN5222 IN751 Scans-0011500 THZ051A10 in5228
Text: C D D fi fi II E urnHUUt SILICON ZENER DIODE CHIPS SILICO N ZEN ER DIODE C H IP S Available in 10% Standard , 5 % tolerance option. Silicon oxide passivated junctions. ANODE (ALUM INUM ) Full Voltage Range: 2.4 through 150 V, “A ” Series. 1.8 through 150 V, “B ” Series.
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1N5265,
1N980
THZ068A10
THZ075A10
THZ082A10
THZ087A10
THZ091A10
1N5266,
1N981
1N5267
IN747
in5253 zener diode
in5247 zener diode
THZ010A10
in750 diode
IN5222
IN751
Scans-0011500
THZ051A10
in5228
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Untitled
Abstract: No abstract text available
Text: M IT E L DSF20060SF -Fast Recovery Diode . . . , Advance Information SEM ICON D UCTOR S u p e rse d e s Septem ber 1996 version, D S4218 - 3.3 D S4218 - 3.4 M arch 1998 APPLICATIONS
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S4218
DSF20060SF
DSF20060SF60
DSF20060SF58
DSF20060SF56
DSF20060SF55
CB450.
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MARKING YA SOT-23
Abstract: No abstract text available
Text: MOTOROLA Order this document by BAW156LT1/D SEMICONDUCTOR TECHNICAL DATA M onolithic Dual Switching Diode BAW156LT1 This switching diode has the following features: • Low Leakage Current Applications • Medium Speed Switching Times M otorola Preferred Device
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OCR Scan
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PDF
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BAW156LT1/D
BAW156LT1
BAW156LT1
BAW156LT3to
inch/10
-236AB)
MARKING YA SOT-23
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