diode 1500V
Abstract: diode marking H2 mark h2 diode fast recovery diode 1500V diode marking e41 diode 3A 1500V
Text: ERE41-15 3A (1500V / 3A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. 25 MIN. Features Damper diode for high definition T.V. and high resolution display Marking High voltage by mesa design Color code : White High reliability Applications
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ERE41-15
diode 1500V
diode marking H2
mark h2 diode
fast recovery diode 1500V
diode marking e41
diode 3A 1500V
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diode marking e41
Abstract: E41-15 diode 3A 1500V 1500V 3A diode
Text: ERE41-15 3A (1500V / 3A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. 25 MIN. Features Damper diode for high definition T.V. and high resolution display Marking High voltage by mesa design Color code : White High reliability Applications
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ERE41-15
diode marking e41
E41-15
diode 3A 1500V
1500V 3A diode
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D09-15
Abstract: diode D09-15 D09.15 diodes CUREENT erd09 d09.15
Text: ERD09 3.0A ( 1300 to 1500V / 3.0A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. Features 25 MIN. Marking Large cureent High voltage by mesa design Color code : Blue D09-15 High reliability Abridged type name Voltage class Applications
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ERD09
D09-15
D09-15
diode D09-15
D09.15 diodes
CUREENT
erd09
d09.15
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schottky marking code PD
Abstract: No abstract text available
Text: 1SS372W SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Applications • High speed switching 3 1 2 Marking Code: ME Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 15 V Reverse Voltage VR 10 V Average Forward Current
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1SS372W
schottky marking code PD
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D09-15
Abstract: w1300 diode D09-15
Text: ERD09 3.0A ( 1300 to 1500V / 3.0A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. Features 25 MIN. Marking Large cureent High voltage by mesa design Color code : Blue D09-15 High reliability Abridged type name Voltage class Applications
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ERD09
D09-15
w1300
D09-15
diode D09-15
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DIODE C06-15
Abstract: c06-15 DIODE C06 15 DIODE C06 C06-15 diode C0615 DIODE C06-15 75 erc06 c06 15
Text: ERC06 1.5A (1300V to 1500V / 1.5A ) Outline drawings, mm FAST RECOVERY DIODE ø 6.4 ø 1.2 7.5 30 MIN. 30 MIN. Features Most suitable for color T.V. damper Marking High voltage by mesa design High reliability Color code : Blue Applications C06 15 Abridged type name
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ERC06
DIODE C06-15
c06-15
DIODE C06 15
DIODE C06
C06-15 diode
C0615
DIODE C06-15 75
erc06
c06 15
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MARKING ta y sod-323
Abstract: smd code marking book smd diode marking code
Text: BB148WS VHF VARIABLE CAPACITANCE DIODE FEATURES PINNING Excellent linearity DESCRIPTION PIN Excellent matching to 1% DMA Very small plastic SMD package C28: 2.6 pF; ratio:15 1 Cathode 2 Anode 2 1 TA Low series resistance Top View Marking Code: "TA" Simplified outline SOD-323 and symbol
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BB148WS
OD-323
OD-323
MARKING ta y sod-323
smd code marking book
smd diode marking code
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international smd marking code
Abstract: No abstract text available
Text: BB148WS VHF VARIABLE CAPACITANCE DIODE FEATURES PINNING Excellent linearity DESCRIPTION PIN Excellent matching to 1% DMA Very small plastic SMD package C28: 2.6 pF; ratio:15 1 Cathode 2 Anode 2 1 TA Low series resistance Top View Marking Code: "TA" Simplified outline SOD-323 and symbol
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BB148WS
OD-323
OD-323
international smd marking code
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diode D07-15
Abstract: D07 15 d07-15 diode d07-15 diode D07-15 04 d0715 diode D07-15 30 fast recovery diode 1500V diode erd07-15
Text: ERD07 1.5A (1300V to 1500V / 1.5A ) Outline drawings, mm FAST RECOVERY DIODE ø 6.4 ø 1.2 7.5 30 MIN. 30 MIN. Features Most suitable for color T.V. damper Marking High voltage by mesa design High reliability Color code : White Applications D07- 15 51 Abridged type name
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ERD07
diode D07-15
D07 15
d07-15 diode
d07-15
diode D07-15 04
d0715
diode D07-15 30
fast recovery diode 1500V
diode erd07-15
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BAT378W
Abstract: No abstract text available
Text: BAT378W SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE 3 1 2 Marking Code: B7 Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 15 V Reverse Voltage VR 10 V Maximum Peak Forward Current IFM 200 mA Surge Forward Current (10 ms)
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BAT378W
Capaci125
BAT378W
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BAT378W
Abstract: MARKING CODE B7
Text: BAT378W SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE 3 1 2 Marking Code: B7 Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 15 V Reverse Voltage VR 10 V Maximum Peak Forward Current IFM 200 mA Surge Forward Current (10 ms)
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BAT378W
Capaci125
BAT378W
MARKING CODE B7
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C67047-A2072-A2
Abstract: DIN IEC 68-1
Text: FRED Diode BYP 101 ● Soft recovery characteristics Type VRRM IFRMS trr Package 1 Ordering Code BYP 101 1000 V 25 A 80 ns TO-218 AD C67047-A2072-A2 Maximum Ratings Parameter Symbol Values Mean forward current IFAV 15 RMS forward current IFRMS 25 Surge forward current
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O-218
C67047-A2072-A2
50-Hz
C67047-A2072-A2
DIN IEC 68-1
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Untitled
Abstract: No abstract text available
Text: Bridge Diode Single In-line Package OUTLINE D4SB80 Unit : mm Weight : 3.9g typ. Package 3S 800V 4A 管理番号（例） Control No. 品名 Type No. • SIP • UL E142422 IFSM • ロット記号（例） Date code 25 D4SB 80 4.6 0264 15 ＋ ① Feature ~ ∼
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D4SB80
E142422
J534-1
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Untitled
Abstract: No abstract text available
Text: Bridge Diode Single In-line Package OUTLINE D10XB60H Unit : mm Weight : 4.4g typ. Package 3S 600V 10A 管理番号（例） Control No. 品名 Type No. • SIP • UL E142422 • IFSM • • ロット記号（例） 4.6 Date code 25 D10XB 60H 0264 15 ＋
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D10XB60H
E142422
D10XB
J534-1
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CSG3001-18A04
Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
Text: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power
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400F415
460F460
500F500
630F415
730F460
800F500
570F575
630F660
870F575
1000F660
CSG3001-18A04
thyristor BBC
thyristor aeg
BBC DSDI 35
WG15013B8C
WG9017
abb sami star
SM18CXC805
sm13cxc174
CSG2001-18A04
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Untitled
Abstract: No abstract text available
Text: PD - 94925B IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.
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94925B
IRGB10B60KDPbF
IRGS10B60KDPbF
IRGSL10B60KDPbF
O-220AB
O-262
I20AB
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d 1830
Abstract: No abstract text available
Text: PD - 94925C IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.
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94925C
IRGB10B60KDPbF
IRGS10B60KDPbF
IRGSL10B60KDPbF
O-220AB
O-262
I20AB
d 1830
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Schottky Diode BAT 15-098 Preliminary Data • DBS mixer application to 10 GHz • Low noise figure • Low barrier type ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration
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OCR Scan
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Q62702-A0062
OD-123
EHA07001
EHD07088
fl535bQ5
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diode marking code I5
Abstract: No abstract text available
Text: Super Fast Recovery Diode Single Diode mtm D30L60 OUTLINE Unit I mm Weight 43g Typ Package I ITO-3P 15 600V 30A Date code 5.5 N Feature • ® M ± FRD • High Voltage Super FRD • Low Noise • trr=150ns Type No. • trr= 150ns toft Polarity • Full Molded
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D30L60
150ns
diode marking code I5
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D30L60
Abstract: No abstract text available
Text: Super Fast Recovery Diode Single Diode •¿m H D30L60 OUTLINE Unit : mm W eight 4.3« T yp P a c k a g e : IT O -3 P 5.5 15 600V 30A a -Æ H K W ) Date code N Feature • raiHŒ FRD • • • • • e y -fX • trr=150ns • yJlst-Jb F S3T High Voltage Super FRD
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D30L60
150ns
D30L60
J533-1
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D20SC9M
Abstract: marking code AJs
Text: Schottky Barrier Diode Twin Diode OUTLINE D20SC9M Unit : mm P a c k a g e : IT O -3 P Weight 4.3« Typ 15 90V 20A Date code Feature • T j= 1 5 0 t: • Tj=150°C • P rrs m T lK r jy is x fä M . • *«9K8B • P rr s m Rating • High lo Rating • 7 J I Æ - J L-K
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D20SC9M
15ffC
J533-1
D20SC9M
marking code AJs
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30SC4M
Abstract: FtZ MARKING CODE Diodo Schottky D30SC4M DIODO diodo 10 A
Text: Schottky Barrier Diode Twin Diode OUTLINE Package : ITO-3P D30SC4M U nit : m m W eight 4.3 « T y p 15 40V 30A 5.5 . n ? h £ 9 (fl) Date code N Feature f f a « 9 (n > • Tj=i5(rc • Tj=1 50°C • P r r s m P K t? • P r r s m Rating • ttU K S B • High lo Rating
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D30SC4M
15ffC
CJ533-1
30SC4M
FtZ MARKING CODE
Diodo Schottky
D30SC4M
DIODO
diodo 10 A
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FtZ MARKING CODE
Abstract: D25SC6M D25SC6MR
Text: Schottky Barrier Diode Twin Diode OUTLINE D25SC6MR Unit :m m P a c k a g e : IT O -3 P W eight 4.3k T y p 15 60V 25A 5.5 n-yt-m XW ) D a te code Feature • Tj=i5(rc • Tj=150°C • P r r s m P K t? • P rrsm R ating • ttU K S B • High lo Rating • 7 J I Æ - J L/K
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D25SC6MR
15ffC
R01GD
D25SC6M
CJ533-1
FtZ MARKING CODE
D25SC6M
D25SC6MR
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ccd diode
Abstract: 50A-150A 2SH2S37 50A-150 diode code F 15 diode code 15 F
Text: CRYDOM CO 31E 2SH2S37 D OGOObll cavaoM 0 • CRY POWER MODULES C O M P A N Y 40A-90A DIODE CIRCUITS PA RA M ETER Average Output Current per Device One-Cycle Surge Current Peak f t for Fusing (Max.) Leakage Current (Max.) Isolation Vtoltage (Min.) Junction Operating and Storage
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2SH2S37
0A-90A
-401O
ccd diode
50A-150A
50A-150
diode code F 15
diode code 15 F
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