Untitled
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# TIP112 Features • • • High DC Cureent Gain: hFE=1000 @ VCE=4.0V, IC=1.0A Low Collector-Emitter Saturation Voltage Industrial Use NPN Epitaxial Silicon
|
Original
|
PDF
|
TIP112
O-220
100pF
|
D09-15
Abstract: w1300 diode D09-15
Text: ERD09 3.0A ( 1300 to 1500V / 3.0A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. Features 25 MIN. Marking Large cureent High voltage by mesa design Color code : Blue D09-15 High reliability Abridged type name Voltage class Applications
|
Original
|
PDF
|
ERD09
D09-15
w1300
D09-15
diode D09-15
|
DIODE D29 -08
Abstract: D29-02 D29 -08 CUREENT d29 08 DIODE erD29 08 D2902 DIODE D29 Diode d29 08 ERD29
Text: ERD29 2.5A ( 200 to 600V / 2.5A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. Features Marking Large cureent High voltage by mesa design Color code : Green Abridged type name Voltage class Applications Absolute maximum ratings Average forward current
|
Original
|
PDF
|
ERD29
D29-02
DIODE D29 -08
D29-02
D29 -08
CUREENT
d29 08
DIODE erD29 08
D2902
DIODE D29
Diode d29 08
ERD29
|
to92l
Abstract: CSD1207 Continental Device India
Text: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Manufacturer NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSD1207 TO-92L Plastic Package High Cureent Switching Applications Complementary CSB892 ABSOLUTE MAXIMUM RATINGS Ta=25ºC SYMBOL
|
Original
|
PDF
|
CSD1207
O-92L
CSB892
C-120
CSD1207
090904E
to92l
Continental Device India
|
DIODE D29 -08
Abstract: DIODE D29 D29 -08 D29-02 fast recovery diode 600v 5A ERD29
Text: ERD29 2.5A ( 200 to 600V / 2.5A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. Features 25 MIN. Marking Large cureent High voltage by mesa design Color code : Green D29-02 High reliability Abridged type name Voltage class Applications
|
Original
|
PDF
|
ERD29
D29-02
ERD29
DIODE D29 -08
DIODE D29
D29 -08
D29-02
fast recovery diode 600v 5A
|
Untitled
Abstract: No abstract text available
Text: MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# TIP112 Features • • • High DC Cureent Gain: hFE=1000 @ VCE=4.0V, IC=1.0A Low Collector-Emitter Saturation Voltage Industrial Use Equivalent Circuit
|
Original
|
PDF
|
TIP112
O-220
|
U280
Abstract: CSD1207
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSD1207 TO-92L Plastic Package High Cureent Switching Applications Complementary CSB892 ABSOLUTE MAXIMUM RATINGS Ta=25ºC SYMBOL VCBO
|
Original
|
PDF
|
ISO/TS16949
CSD1207
O-92L
CSB892
C-120
CSD1207
Rev310504E
U280
|
CD1207
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CD1207 TO-92L Plastic Package High Cureent Switching Applications ABSOLUTE MAXIMUM RATINGS Ta=25ºC SYMBOL VCBO VALUE UNITS
|
Original
|
PDF
|
CD1207
O-92L
C-120
CD1207Rev
090305E
CD1207
|
D09-15
Abstract: diode D09-15 d0915 d09.15 ERD09
Text: ERD09 3.0A ( 1300 to 1500V / 3.0A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. Features Marking Large cureent High voltage by mesa design Color code : Blue Abridged type name Voltage class Applications Absolute maximum ratings Average forward current
|
Original
|
PDF
|
ERD09
D09-15
D09-15
diode D09-15
d0915
d09.15
ERD09
|
DIODE D29 -08
Abstract: D29-02 DIODE D29 d29 08 D29 -08
Text: ERD29 2.5A ( 200 to 600V / 2.5A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. Features 25 MIN. Marking Large cureent High voltage by mesa design Color code : Green D29-02 High reliability Abridged type name Voltage class Applications
|
Original
|
PDF
|
ERD29
D29-02
-04gn-06
ERD29
DIODE D29 -08
DIODE D29
d29 08
D29 -08
|
CD1207
Abstract: TO-92L
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CD1207 TO-92L Plastic Package High Cureent Switching Applications ABSOLUTE MAXIMUM RATINGS Ta=25ºC SYMBOL VCBO VALUE UNITS
|
Original
|
PDF
|
CD1207
O-92L
C-120
CD1207Rev140205E
CD1207
TO-92L
|
D09-15
Abstract: diode D09-15 D09.15 diodes CUREENT erd09 d09.15
Text: ERD09 3.0A ( 1300 to 1500V / 3.0A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. Features 25 MIN. Marking Large cureent High voltage by mesa design Color code : Blue D09-15 High reliability Abridged type name Voltage class Applications
|
Original
|
PDF
|
ERD09
D09-15
D09-15
diode D09-15
D09.15 diodes
CUREENT
erd09
d09.15
|
Untitled
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components TIP112 Features • • • High DC Cureent Gain: hFE=1000 @ VCE=4.0V, IC=1.0A Low Collector-Emitter Saturation Voltage
|
Original
|
PDF
|
TIP112
O-220
|
DIODE D29 -08
Abstract: D29 -08 D29-02 d29 08 ERD29 uA105
Text: ERD29 2.5A ( 200 to 600V / 2.5A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. Features 25 MIN. Marking Large cureent High voltage by mesa design Color code : Green D29-02 High reliability Abridged type name Voltage class Applications
|
Original
|
PDF
|
ERD29
D29-02
DIODE D29 -08
D29 -08
D29-02
d29 08
ERD29
uA105
|
|
|
MACH465
Abstract: 85C30 MACH465-12 EZ-030 AM29030 D1667 29030 27C010 MACH220 MAX232
Text: Using a PC I Bus as the I /O Bus on an Am29030/040 M icroprocessor Design Application Note This application note describes how the Peripheral Component Interconnect (PCI) bus can be used as the I/O bus portion on a two-bus microcontroller design. Additionally, one
|
Original
|
PDF
|
Am29030/040
Am29030/040TM
32-bit
64-bit
Am186,
Am386,
Am486,
Am29000
MACH465
85C30
MACH465-12
EZ-030
AM29030
D1667
29030
27C010
MACH220
MAX232
|
Untitled
Abstract: No abstract text available
Text: UCC28050, UCC28051 UCC38050, UCC38051 SLUS515C−SEPTEMBER 2002 − REVISED DECEMBER 2004 TRANSITION MODE PFC CONTROLLER FEATURES D Transition Mode PFC Controller for Low D D D D D D D D D APPLICATIONS D Switch-Mode Power Supplies for Desktops, Implementation Cost
|
Original
|
PDF
|
UCC28050,
UCC28051
UCC38050,
UCC38051
SLUS515Câ
750-mA
|
SMD W2f sot23
Abstract: SOT-23 marking w2f W2f 01
Text: Transistors SMD Type Product specification KMBT2907 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 1 0.55 ● Power Dissipation :PD=250mW +0.1 1.3-0.1 +0.1 2.4-0.1 ● Collector Current to Continuous :IC= -600mA 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1
|
Original
|
PDF
|
KMBT2907
OT-23
250mW
-600mA
SMD W2f sot23
SOT-23 marking w2f
W2f 01
|
Untitled
Abstract: No abstract text available
Text: MMBT2907AW PNP General Purpose Transistors COLLECTOR 3 * “G” Lead Pb -Free 3 1 BASE 1 2 2 EMITTER SOT-323(SC-70) MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Value -60 -60 -5.0
|
Original
|
PDF
|
MMBT2907AW
OT-323
SC-70)
MMBT2907AW
OT-323
|
Untitled
Abstract: No abstract text available
Text: WSD421 WSD425 Surface Mount Schottky Barrier Diode * “G” Lead Pb -Free SCHOTTKY BARRIER RECTIFIERS 100mAMPERES 40VOLTS Features: *High Reliability *Low Voltage *Small Surface Mounting Type Mechanical Data: 3 *Case : Molded Plastic *Terminals : Solderable per MIL-STD-202,Method 208
|
Original
|
PDF
|
WSD421
WSD425
100mAMPERES
40VOLTS
MIL-STD-202
OT-23
OT-23
|
Untitled
Abstract: No abstract text available
Text: WSD421 WSD425 Surface Mount Schottky Barrier Diode * “G” Lead Pb -Free SCHOTTKY BARRIER RECTIFIERS 100mAMPERES 40VOLTS Features: *High Reliability *Low Voltage *Small Surface Mounting Type Mechanical Data: 3 *Case : Molded Plastic *Terminals : Solderable per MIL-STD-202,Method 208
|
Original
|
PDF
|
WSD421
WSD425
100mAMPERES
40VOLTS
MIL-STD-202
OT-23
OT-23
|
Untitled
Abstract: No abstract text available
Text: FORWARD INTERNATIONAL ELECTRONICS L ID . BC847 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR G EN ER A L PU R PO SE T R A N SIST O R ABSOLUTE MAXIMUM RATINGS at Tan*=2$ C Symbol Vcbo Rating Unit 50 V Vceo Vebo 45 6 V V Collector Cureent Collector Dissipation
|
OCR Scan
|
PDF
|
BC847
100mA
200uA
200Hz
|
Untitled
Abstract: No abstract text available
Text: HD74HC32 # Quad. 2-input OR Gates • FEATURES I PIN ARRANGEMENT • High Speed Operation: 1^ * = 10ns typ. C/_ =50pF • • • • High Output Current: Fanout of 10 LSTT L Loads Wide Operating Voltage: V'cc=2~6V Low Input Current: 1jiA max. Low Quiescent Supply Cureent: Icc (static) * 1mA max. (7a”25°C)
|
OCR Scan
|
PDF
|
HD74HC32
--20//A
|
74LS169BN
Abstract: 74S169
Text: TYPES SN54LS169B, SN54S168, SN54S169, SN74LS169B, SN74S168, SN74S169 SYNCHRONOUS 4-BIT UP/DOWN COUNTERS OCTOBER 1976 —REVISED MAY 1983 S168 . . . SYNCHRONOUS UP/DOW N DECADE COUNTERS 'LS169B, 'S169 . . . SYNCHRONOUS UP/DO W N BINARY COUNTERS SN 54S 168, 5N 54LS169B, S N 54S 169 . . . J OB W PACKAGE
|
OCR Scan
|
PDF
|
SN54LS169B,
SN54S168,
SN54S169,
SN74LS169B,
SN74S168,
SN74S169
LS169B,
54LS169B,
74LS169BN
74S169
|
Untitled
Abstract: No abstract text available
Text: MG600J1US51 TOSHIBA M G 6 0 0 J 1 US51 TOSHIBA GTR M O DU LE SILICON N CHANNEL IGBT HIGH POWER SW ITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. • • • • The Electrodes are Isolated from Case. High Input Impedance Enhancement-Mode High Speed : ^ = 0 .3 0 /^ Max. (I0 = 6OOA)
|
OCR Scan
|
PDF
|
MG600J1US51
15/d5
2-109E1A
TjS125Â
j1001
|