Diode BYW 56
Abstract: diodes byw
Text: BYW 27-50.BYW 27-1000 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor ,2 Axial lead diode Standard silicon rectifier diodes BYW 27-50.BYW 27-1000 8 9 3 9 9
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Untitled
Abstract: No abstract text available
Text: BYW 27-50.BYW 27-1000 ,2 Axial lead diode Standard silicon rectifier diodes BYW 27-50.BYW 27-1000 8 9 3 9 9 + /+ 3 9 9 + 9 9 2 =>* 0$1 =>* 0$' =>* 0$ =>* 0$" =>* 0$ =>* 0$@ #88 # 1 '
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Untitled
Abstract: No abstract text available
Text: BYW 27-50.BYW 27-1000 ,2 Axial lead diode Standard silicon rectifier diodes BYW 27-50.BYW 27-1000 8 9 3 9 9 + /+ 3 9 9 + 9 9 2 =>* 0$1 =>* 0$' =>* 0$ =>* 0$" =>* 0$ =>* 0$@ #88 # 1 '
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diodes byw
Abstract: diode BYW
Text: BYW 27-50.BYW 27-1000 ,2 Axial lead diode Standard silicon rectifier diodes BYW 27-50.BYW 27-1000 8 9 3 9 9 + /+ 3 9 9 + 9 9 2 =>* 0$1 =>* 0$' =>* 0$ =>* 0$" =>* 0$ =>* 0$@ #88 # 1 '
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Diode BYW 56
Abstract: tfk 731 BYW56 BYW 56 V diodes byw BYW 52 TFK 03 diodes diode BYW N5059 DIODE in 5060
Text: m 'W ? BYW 52 E8 BYW 56 Silizium-Mesa-Dioden Silicon-Mesa-Diodes Anwendungen: Leistungsgleichrichter Applications: Power rectifier Besondere Merkmale: Features: • Stoßspannungsfest • Controlled avalanche characteristics • Hermetische G laspassivierung
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Diode BYW 56
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bbS3T31 002bb77 525 » A P X b5E D BYW54 to 56 CONTROLLED AVALANCHE RECTIFIER DIODES Double-diffused glass passivated rectifier diodes in herm etically sealed axial-leaded glass envelopes, capable of absorbing reverse transients. They are intended for rectifier applications in colour television circuits as well as general purpose appli
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bbS3T31
002bb77
BYW54
7Z88032
Diode BYW 56
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transistor S 8050
Abstract: ggqb2 8A273 BYW60 Diode BYW 56 150TV diodes byw transistor 8050 d diode BYW 60
Text: S G S^C D I 7 ^ 2 3 7 S -TH G M S O N O THO M SO N-CSF QODEEMO BYWB05Q 200 BYW 80 150A DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFF IC IE N C Y FA ST R EC O V ERY R E C T IFIE R S REDRESSEURS RAPIDES A HAUT RENDEMENT 59C 02240 f D ^ o î - n ^ HIGH EFFICIENCY
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BYWB05Q
130OC
CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
transistor S 8050
ggqb2
8A273
BYW60
Diode BYW 56
150TV
diodes byw
transistor 8050 d
diode BYW 60
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diode BYW 66
Abstract: diode P2F DIODE DO-220 high efficiency fast recovery diode byw BYW 90 diode BYW 85 BYW 26 8050 2D C diode BYW diode BYW 60
Text: S^C D I 7 ^ 2 3 7 S G S-THGMSON O THO M SO N-CSF QODEEMO BYWB05Q 200 BYW 80 150A DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFF IC IE N C Y FA ST R EC O V ERY R E C T IFIE R S REDRESSEURS RAPIDES A HAUT RENDEMENT 59C 0 2 2 4 0 f D ^ o î - n ^ HIGH EFFICIENCY
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BYW80150A
Q00S2M5
diode BYW 66
diode P2F
DIODE DO-220
high efficiency fast recovery diode byw
BYW 90
diode BYW 85
BYW 26
8050 2D C
diode BYW
diode BYW 60
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marking 3t1
Abstract: BYW54 88034 BYW55 BYW56
Text: N AMER P H I L I P S / D I S C R E T E bTE ]> • b b S B 'm QGBbb? 5ET ■ APX BYW54 to 56 CONTROLLED AVALANCHE RECTIFIER DIODES D ouble-diffused glass passivated re c tifie r diodes in h e rm e tica lly sealed axial-leaded glass envelopes, capable o f absorbing reverse transients.
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bbS3131
0GBbb77
BYW54
OD-57.
BYW55
BYW56
7Z88032
marking 3t1
88034
BYW56
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diode byw 81 200
Abstract: Diode BYW 59 Diode BYW 56 diode BYW 66 Q002 ANTENA 8150 diode diode BYW diode BYW 81 diode P2F
Text: S G S-THOMSQN : SIC D THOMSON*CSF o DIVISION SEMICONOUCTÏURS DISCRETS TTETEB? QGQEEMt. BYW 81-50—200, R BYW 81-150 A . (R) SUPERSWITCH HIGH E FF IC IE N C Y FA ST R EC O V ERY R E C T IF IE R S REDRESSEURS RAPIDES A H A U T RENDEMENT 59C 022^6 HIGH EFFICIENCY
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Iat100Â
diode byw 81 200
Diode BYW 59
Diode BYW 56
diode BYW 66
Q002
ANTENA
8150 diode
diode BYW
diode BYW 81
diode P2F
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Diode BYW 56
Abstract: 0224S diode BYW 19 2791T byw+36+v
Text: S G S-THOMSQN SIC D o THOMSON*CSF BYW 81-50—200, R BYW 81-150 A. (R) DIVISION SEMICONOUCTÏURS DISCRETS : TTETEB? QGQEEMt. SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A H A U T RENDEMENT 59C 022^6 HIGH EFFICIENCY SUPER SWITCH
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1200C
REDRE08
CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
Diode BYW 56
0224S
diode BYW 19
2791T
byw+36+v
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N5625
Abstract: diodes byw N5624 diodes byw 88 600 r
Text: BYW82.BYW86 Vishay Telefunken Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • C ontrolled avalanche characteristics • Low reverse current • High surge current loading • Electrically equivalent diodes:
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BYW82.
BYW86
N5625
D-74025
24-Jun-98
diodes byw
N5624
diodes byw 88 600 r
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N5062
Abstract: Diode BYW 56 TELEFUNKEN BYW-56 N-5061 diodes byw diodes byw 88 600 r N5059
Text: BYW52.BYW56 Vishay Telefunken Silicon Mesa Rectifiers Features • C ontrolled avalanche characteristics • G lass passivated junction • H erm etically sealed package • Low reverse current • High surge current loading • Electrically equivalent diodes:
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BYW52.
BYW56
N5059
N5060
N5061
N5062
D-74025
24-Jun-98
N5062
Diode BYW 56
TELEFUNKEN BYW-56
N-5061
diodes byw
diodes byw 88 600 r
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IN5059
Abstract: 1n5062 equivalent diodes byw Diode BYW 56 BYW 52 BYW 200 1N5060 diode BYW 54 byw 56 equivalent
Text: Te m ic BYW52.BYW56 T ELEFU NK EN Sem iconductors Silicon Mesa Rectifiers Features • Controlled avalanche characteristics • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading • Electrically equivalent diodes:
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BYW52.
BYW56
IN5059
BYW53
1N5060
BYW55
1N5062
1n5062 equivalent
diodes byw
Diode BYW 56
BYW 52
BYW 200
1N5060 diode
BYW 54
byw 56 equivalent
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diodes byw
Abstract: No abstract text available
Text: Temic BYW82.BYW86 S e m i c o n d u c t o r s Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • C ontrolled avalanche characteristics • L ow reverse current • H igh surge current loading • E lectrically equivalent diodes:
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BYW82.
BYW86
1N5624
1N5625
12-Dec-94
diodes byw
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diode BYW 64
Abstract: No abstract text available
Text: ^ EMIC BYW82.BYW86 T EL E FU N K E N Sem iconductors Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • Controlled avalanche characteristics • L ow reverse current • High surge current loading • Electrically equivalent diodes:
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BYW82.
BYW86
1N5625
diode BYW 64
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Diode 1N4007 DO-7 Rectifier Diode
Abstract: 1N40075 BYX/400 1N4007 RECTIFIER DIODE 4007 uf 1200 BAX12 BYW52 BYW53 BYW54 BYW55
Text: Diodes Rectifier and Avalanche diodes Type BY 202 BY 203 BY 204 Maximum ratings Notes Characteristics V 4 8006 90 <300 £ 1 .0 200 £ 507) Contact protection diode 2 5 1000') 200 £100 £ 1 .2 1000 £ 3503) Fast rectifier diodes 3 5 1000') 300 £100 <1.2
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BAX12
F1000
1N4001
1N4002
1N4003
1N4004
1N4006
1N4007
Diode 1N4007 DO-7 Rectifier Diode
1N40075
BYX/400
1N4007 RECTIFIER DIODE
4007 uf 1200
BAX12
BYW52
BYW53
BYW54
BYW55
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T0247
Abstract: BYW99P-200 BYW99PI-200 BYW99W-200
Text: S G S - T H O M S O N M M E L E @ ÌT [^ G M © i B Y W 9 9 P /P I/W HIGH E FFIC IEN C Y FAST RECO VERY RECTIFIER DIODES P R E L IM IN A R Y D A T A S H E E T FEATURES • . ■ ■ . ■ SUITED FORSM PS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES
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BYW99P/PI/W
T0247
BYW99P-200
BYW99PI-200
T0247
BYW99W-200
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T0247
Abstract: T0247 package BYW99P-200 BYW99PI-200 BYW99W-200 BYW99W200 1MH7 33ili
Text: S G S -T H O M S O N M M ELE@ ÌT[^ GM ©i B Y W 9 9 P /P I/W HIGH E FFIC IEN C Y FAST RECO VERY RECTIFIER DIODES PR ELIM IN A R Y DATASHEET FEATURES • . ■ ■ . ■ SUITED FORSM PS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY
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BYW99P/PI/W
T0247
BYW99P-200
BYW99PI-200
T0247
BYW99W-200
T0247 package
BYW99P-200
BYW99PI-200
BYW99W-200
BYW99W200
1MH7
33ili
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BYW29E-100
Abstract: T0220AB byw29e to3 HEATSINK BYW29E100
Text: P H ILIP S INTERNATIONAL D ata sheet status Preliminary specification d ate of issue February 1991 G ENERA L DESCRIPTION Glass passivated, high efficiency, rugged epitaxial rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra-fast
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BYW29E-100/150/200
T0220AB
711002b
00242GÃ
T0220AC;
T0220
BYW29E-100
T0220AB
byw29e
to3 HEATSINK
BYW29E100
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LR8C
Abstract: BYW29 T0220AB BYW29 diode rectifier
Text: PHILIPS INTERNATIONAL « E , B 7ll062b 0021 S03 T m p m H T~Q3~ 7 D ata sh eet sta tu s Preliminary specification date of issu e February 1991 GENERAL DESCRIPTION G la ss passivated, high efficiency, rugged epitaxial rectifier diodes in plastic envelopes, featuring low
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711DfiSb
T0220AB
BYW29E-100/150/200
T0220AC;
T0220
LR8C
BYW29
T0220AB
BYW29 diode rectifier
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cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
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AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
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LDR 03
Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Text: Halbleiter bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren
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BYW 90
Abstract: byw90 silicon diode byw 60 Diode BYW 56 L4960 power switching regulator Heptawatt
Text: fZ T SGS-THOMSON ^ 7 # . K L E Ê M iD Ê i L 4 9 6 0 2.5A POW ER SW ITC H IN G REGULATOR • 2.5A OUTPUT CURRENT ■ 5.1V TO 40V OPUTPUT VOLTAGE RANGE ■ PRECISE ± 2 % ON-CHIP REFERENCE ■ HIGH SWITCHING FREQUENCY ■ VERY HIGH EFFICIENCY (UP TO 90%)
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L4960
L4960H
L4960
L4960is
BYW 90
byw90
silicon diode byw 60
Diode BYW 56
L4960 power switching regulator Heptawatt
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