Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIODE BYW 56 Search Results

    DIODE BYW 56 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE BYW 56 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Diode BYW 56

    Abstract: diodes byw
    Text: BYW 27-50.BYW 27-1000 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor ,2 Axial lead diode Standard silicon rectifier diodes BYW 27-50.BYW 27-1000 8  9  3  9  9


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: BYW 27-50.BYW 27-1000 ,2 Axial lead diode Standard silicon rectifier diodes BYW 27-50.BYW 27-1000 8  9  3  9  9 + /+  3  9  9 +   9    9 2  =>* 0$1 =>* 0$' =>* 0$ =>* 0$" =>* 0$ =>* 0$@ #88 # 1 ' 


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: BYW 27-50.BYW 27-1000 ,2 Axial lead diode Standard silicon rectifier diodes BYW 27-50.BYW 27-1000 8  9  3  9  9 + /+  3  9  9 +   9    9 2  =>* 0$1 =>* 0$' =>* 0$ =>* 0$" =>* 0$ =>* 0$@ #88 # 1 ' 


    Original
    PDF

    diodes byw

    Abstract: diode BYW
    Text: BYW 27-50.BYW 27-1000 ,2 Axial lead diode Standard silicon rectifier diodes BYW 27-50.BYW 27-1000 8  9  3  9  9 + /+  3  9  9 +   9    9 2  =>* 0$1 =>* 0$' =>* 0$ =>* 0$" =>* 0$ =>* 0$@ #88 # 1 ' 


    Original
    PDF

    Diode BYW 56

    Abstract: tfk 731 BYW56 BYW 56 V diodes byw BYW 52 TFK 03 diodes diode BYW N5059 DIODE in 5060
    Text: m 'W ? BYW 52 E8 BYW 56 Silizium-Mesa-Dioden Silicon-Mesa-Diodes Anwendungen: Leistungsgleichrichter Applications: Power rectifier Besondere Merkmale: Features: • Stoßspannungsfest • Controlled avalanche characteristics • Hermetische G laspassivierung


    OCR Scan
    PDF

    Diode BYW 56

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bbS3T31 002bb77 525 » A P X b5E D BYW54 to 56 CONTROLLED AVALANCHE RECTIFIER DIODES Double-diffused glass passivated rectifier diodes in herm etically sealed axial-leaded glass envelopes, capable of absorbing reverse transients. They are intended for rectifier applications in colour television circuits as well as general purpose appli­


    OCR Scan
    PDF bbS3T31 002bb77 BYW54 7Z88032 Diode BYW 56

    transistor S 8050

    Abstract: ggqb2 8A273 BYW60 Diode BYW 56 150TV diodes byw transistor 8050 d diode BYW 60
    Text: S G S^C D I 7 ^ 2 3 7 S -TH G M S O N O THO M SO N-CSF QODEEMO BYWB05Q 200 BYW 80 150A DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFF IC IE N C Y FA ST R EC O V ERY R E C T IFIE R S REDRESSEURS RAPIDES A HAUT RENDEMENT 59C 02240 f D ^ o î - n ^ HIGH EFFICIENCY


    OCR Scan
    PDF BYWB05Q 130OC CB-425) CB-262) CB-262 CB-19) CB-428) CB-244 transistor S 8050 ggqb2 8A273 BYW60 Diode BYW 56 150TV diodes byw transistor 8050 d diode BYW 60

    diode BYW 66

    Abstract: diode P2F DIODE DO-220 high efficiency fast recovery diode byw BYW 90 diode BYW 85 BYW 26 8050 2D C diode BYW diode BYW 60
    Text: S^C D I 7 ^ 2 3 7 S G S-THGMSON O THO M SO N-CSF QODEEMO BYWB05Q 200 BYW 80 150A DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFF IC IE N C Y FA ST R EC O V ERY R E C T IFIE R S REDRESSEURS RAPIDES A HAUT RENDEMENT 59C 0 2 2 4 0 f D ^ o î - n ^ HIGH EFFICIENCY


    OCR Scan
    PDF BYW80150A Q00S2M5 diode BYW 66 diode P2F DIODE DO-220 high efficiency fast recovery diode byw BYW 90 diode BYW 85 BYW 26 8050 2D C diode BYW diode BYW 60

    marking 3t1

    Abstract: BYW54 88034 BYW55 BYW56
    Text: N AMER P H I L I P S / D I S C R E T E bTE ]> • b b S B 'm QGBbb? 5ET ■ APX BYW54 to 56 CONTROLLED AVALANCHE RECTIFIER DIODES D ouble-diffused glass passivated re c tifie r diodes in h e rm e tica lly sealed axial-leaded glass envelopes, capable o f absorbing reverse transients.


    OCR Scan
    PDF bbS3131 0GBbb77 BYW54 OD-57. BYW55 BYW56 7Z88032 marking 3t1 88034 BYW56

    diode byw 81 200

    Abstract: Diode BYW 59 Diode BYW 56 diode BYW 66 Q002 ANTENA 8150 diode diode BYW diode BYW 81 diode P2F
    Text: S G S-THOMSQN : SIC D THOMSON*CSF o DIVISION SEMICONOUCTÏURS DISCRETS TTETEB? QGQEEMt. BYW 81-50—200, R BYW 81-150 A . (R) SUPERSWITCH HIGH E FF IC IE N C Y FA ST R EC O V ERY R E C T IF IE R S REDRESSEURS RAPIDES A H A U T RENDEMENT 59C 022^6 HIGH EFFICIENCY


    OCR Scan
    PDF Iat100Â diode byw 81 200 Diode BYW 59 Diode BYW 56 diode BYW 66 Q002 ANTENA 8150 diode diode BYW diode BYW 81 diode P2F

    Diode BYW 56

    Abstract: 0224S diode BYW 19 2791T byw+36+v
    Text: S G S-THOMSQN SIC D o THOMSON*CSF BYW 81-50—200, R BYW 81-150 A. (R) DIVISION SEMICONOUCTÏURS DISCRETS : TTETEB? QGQEEMt. SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A H A U T RENDEMENT 59C 022^6 HIGH EFFICIENCY SUPER SWITCH


    OCR Scan
    PDF 1200C REDRE08 CB-425) CB-262) CB-262 CB-19) CB-428) CB-244 Diode BYW 56 0224S diode BYW 19 2791T byw+36+v

    N5625

    Abstract: diodes byw N5624 diodes byw 88 600 r
    Text: BYW82.BYW86 Vishay Telefunken Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • C ontrolled avalanche characteristics • Low reverse current • High surge current loading • Electrically equivalent diodes:


    OCR Scan
    PDF BYW82. BYW86 N5625 D-74025 24-Jun-98 diodes byw N5624 diodes byw 88 600 r

    N5062

    Abstract: Diode BYW 56 TELEFUNKEN BYW-56 N-5061 diodes byw diodes byw 88 600 r N5059
    Text: BYW52.BYW56 Vishay Telefunken Silicon Mesa Rectifiers Features • C ontrolled avalanche characteristics • G lass passivated junction • H erm etically sealed package • Low reverse current • High surge current loading • Electrically equivalent diodes:


    OCR Scan
    PDF BYW52. BYW56 N5059 N5060 N5061 N5062 D-74025 24-Jun-98 N5062 Diode BYW 56 TELEFUNKEN BYW-56 N-5061 diodes byw diodes byw 88 600 r

    IN5059

    Abstract: 1n5062 equivalent diodes byw Diode BYW 56 BYW 52 BYW 200 1N5060 diode BYW 54 byw 56 equivalent
    Text: Te m ic BYW52.BYW56 T ELEFU NK EN Sem iconductors Silicon Mesa Rectifiers Features • Controlled avalanche characteristics • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading • Electrically equivalent diodes:


    OCR Scan
    PDF BYW52. BYW56 IN5059 BYW53 1N5060 BYW55 1N5062 1n5062 equivalent diodes byw Diode BYW 56 BYW 52 BYW 200 1N5060 diode BYW 54 byw 56 equivalent

    diodes byw

    Abstract: No abstract text available
    Text: Temic BYW82.BYW86 S e m i c o n d u c t o r s Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • C ontrolled avalanche characteristics • L ow reverse current • H igh surge current loading • E lectrically equivalent diodes:


    OCR Scan
    PDF BYW82. BYW86 1N5624 1N5625 12-Dec-94 diodes byw

    diode BYW 64

    Abstract: No abstract text available
    Text: ^ EMIC BYW82.BYW86 T EL E FU N K E N Sem iconductors Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • Controlled avalanche characteristics • L ow reverse current • High surge current loading • Electrically equivalent diodes:


    OCR Scan
    PDF BYW82. BYW86 1N5625 diode BYW 64

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: 1N40075 BYX/400 1N4007 RECTIFIER DIODE 4007 uf 1200 BAX12 BYW52 BYW53 BYW54 BYW55
    Text: Diodes Rectifier and Avalanche diodes Type BY 202 BY 203 BY 204 Maximum ratings Notes Characteristics V 4 8006 90 <300 £ 1 .0 200 £ 507) Contact protection diode 2 5 1000') 200 £100 £ 1 .2 1000 £ 3503) Fast rectifier diodes 3 5 1000') 300 £100 <1.2


    OCR Scan
    PDF BAX12 F1000 1N4001 1N4002 1N4003 1N4004 1N4006 1N4007 Diode 1N4007 DO-7 Rectifier Diode 1N40075 BYX/400 1N4007 RECTIFIER DIODE 4007 uf 1200 BAX12 BYW52 BYW53 BYW54 BYW55

    T0247

    Abstract: BYW99P-200 BYW99PI-200 BYW99W-200
    Text: S G S - T H O M S O N M M E L E @ ÌT [^ G M © i B Y W 9 9 P /P I/W HIGH E FFIC IEN C Y FAST RECO VERY RECTIFIER DIODES P R E L IM IN A R Y D A T A S H E E T FEATURES • . ■ ■ . ■ SUITED FORSM PS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES


    OCR Scan
    PDF BYW99P/PI/W T0247 BYW99P-200 BYW99PI-200 T0247 BYW99W-200

    T0247

    Abstract: T0247 package BYW99P-200 BYW99PI-200 BYW99W-200 BYW99W200 1MH7 33ili
    Text: S G S -T H O M S O N M M ELE@ ÌT[^ GM ©i B Y W 9 9 P /P I/W HIGH E FFIC IEN C Y FAST RECO VERY RECTIFIER DIODES PR ELIM IN A R Y DATASHEET FEATURES • . ■ ■ . ■ SUITED FORSM PS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY


    OCR Scan
    PDF BYW99P/PI/W T0247 BYW99P-200 BYW99PI-200 T0247 BYW99W-200 T0247 package BYW99P-200 BYW99PI-200 BYW99W-200 BYW99W200 1MH7 33ili

    BYW29E-100

    Abstract: T0220AB byw29e to3 HEATSINK BYW29E100
    Text: P H ILIP S INTERNATIONAL D ata sheet status Preliminary specification d ate of issue February 1991 G ENERA L DESCRIPTION Glass passivated, high efficiency, rugged epitaxial rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra-fast


    OCR Scan
    PDF BYW29E-100/150/200 T0220AB 711002b 00242GÃ T0220AC; T0220 BYW29E-100 T0220AB byw29e to3 HEATSINK BYW29E100

    LR8C

    Abstract: BYW29 T0220AB BYW29 diode rectifier
    Text: PHILIPS INTERNATIONAL « E , B 7ll062b 0021 S03 T m p m H T~Q3~ 7 D ata sh eet sta tu s Preliminary specification date of issu e February 1991 GENERAL DESCRIPTION G la ss passivated, high efficiency, rugged epitaxial rectifier diodes in plastic envelopes, featuring low


    OCR Scan
    PDF 711DfiSb T0220AB BYW29E-100/150/200 T0220AC; T0220 LR8C BYW29 T0220AB BYW29 diode rectifier

    cqx 87

    Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
    Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157


    OCR Scan
    PDF AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175

    LDR 03

    Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
    Text: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren


    OCR Scan
    PDF

    BYW 90

    Abstract: byw90 silicon diode byw 60 Diode BYW 56 L4960 power switching regulator Heptawatt
    Text: fZ T SGS-THOMSON ^ 7 # . K L E Ê M iD Ê i L 4 9 6 0 2.5A POW ER SW ITC H IN G REGULATOR • 2.5A OUTPUT CURRENT ■ 5.1V TO 40V OPUTPUT VOLTAGE RANGE ■ PRECISE ± 2 % ON-CHIP REFERENCE ■ HIGH SWITCHING FREQUENCY ■ VERY HIGH EFFICIENCY (UP TO 90%)


    OCR Scan
    PDF L4960 L4960H L4960 L4960is BYW 90 byw90 silicon diode byw 60 Diode BYW 56 L4960 power switching regulator Heptawatt