epsilam 10
Abstract: BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239
Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE18150X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors September 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial
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LLE18150X
epsilam 10
BY239
BDT91
LLE18150X
SC15
erie 1250-003
diode BY239
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LLE18100X
Abstract: MRA543 1702 NPN transistor transistor 431 ab BDT85 MCD660 MRA542 transistor w 431
Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE18100X NPN silicon planar epitaxial microwave power transistor Product specification November 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor LLE18100X FEATURES
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LLE18100X
OT437A
LLE18100X
MRA543
1702 NPN transistor
transistor 431 ab
BDT85
MCD660
MRA542
transistor w 431
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epsilam 10
Abstract: BY239 MLC431 BDT91 LFE18500X SC15 erie 1250-003 diode BY239 iw16
Text: DISCRETE SEMICONDUCTORS DATA SHEET LFE18500X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors December 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial
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LFE18500X
epsilam 10
BY239
MLC431
BDT91
LFE18500X
SC15
erie 1250-003
diode BY239
iw16
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L9936
Abstract: hardware for dc to ac full bridge converter window lift motor
Text: / = T S G S -T H O M S O N ^ 7 # . [*^ §[Li gTr[EMD(gS L9936 HALF BRIDGE MOTOR DRIVER . • ■ ■ ■ ■ ■ 20A OUTPUT CU RREN T/DC OPERATION LOW SATURATION VOLTAGE VERY LOW CONSUMPTION IN OFF STATE OVERLOAD DIAGNOSTIC OUTPUT INTERNAL TEMPERATURE SENSOR
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L9936
L9936
hardware for dc to ac full bridge converter
window lift motor
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Transistor AND DIODE Equivalent list
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very
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BDT85
BY239800
BY239800;
LLE16120X
Transistor AND DIODE Equivalent list
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B0239
Abstract: Transistor AND DIODE Equivalent list Transistor Equivalent list LC437 AB-162 transistor
Text: Philips Semiconductors Preliminary specification NPN microwave power transistor LX1214E500X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Microwave performance up to Tmb - 25 °C in a common emitter class AB.
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LX1214E500X
100A1201kp
B0239
Transistor AND DIODE Equivalent list
Transistor Equivalent list
LC437
AB-162 transistor
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Transistor Equivalent list
Abstract: J3 transistor by239 1500 100A101kp diode J3
Text: Philips Semiconductors Product specification NPN microwave power transistor LFE15600X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Microwave performance up to Tmb = 25 °C in a common emitter class AB
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LFE15600X
Transistor Equivalent list
J3 transistor
by239 1500
100A101kp
diode J3
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j78 transistor
Abstract: j78 transistor equivalent
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very
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LLE15180X
j78 transistor
j78 transistor equivalent
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diode BY239
Abstract: bd239 equivalent BD750 Transistor Equivalent list BD 750 PERMITTIVITY* 2.55
Text: Philips Sem iconductors Product specification NPN m icrow ave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency
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LLE16045X
diode BY239
bd239 equivalent
BD750
Transistor Equivalent list
BD 750
PERMITTIVITY* 2.55
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BY239-800
Abstract: MGA247 BDT85 LLE16120X SC15 resistor 3.3 k Class D Amplifier Circuit
Text: Philips Semiconductors Product specification NPN microwave power transistor LLE16120X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR amplifier. • Interdigitated structure provides
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LLE16120X
OT437A.
BY239-800
MGA247
BDT85
LLE16120X
SC15
resistor 3.3 k
Class D Amplifier Circuit
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erie 1500 z
Abstract: BDT91 BY239 LFE15600X SC15 by239 1500
Text: Philips Semiconductors Product specification NPN microwave power transistor LFE15600X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR amplifier. • Interdigitated structure provides
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LFE15600X
erie 1500 z
BDT91
BY239
LFE15600X
SC15
by239 1500
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by239
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistor LLE16350X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Microwave performance up to Tmb = 25 °C in a common emitter class AB
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LLE16350X
by239
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Transistor AND DIODE Equivalent list
Abstract: 100A101kp
Text: Philips Semiconductors Product specification LLE15370X NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency
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LLE15370X
MBD764
Transistor AND DIODE Equivalent list
100A101kp
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Transistor Equivalent list
Abstract: Transistor AND DIODE Equivalent list capacitor feed-through
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very
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OT439A
LXE16350X
RA439
Transistor Equivalent list
Transistor AND DIODE Equivalent list
capacitor feed-through
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Transistor Equivalent list
Abstract: diode IN4148 Transistor AND DIODE Equivalent list copper permittivity TRIMMER capacitor by239-800 erie feedthrough capacitors BDT85 IN4148 LXE16350X
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VS W R • Interdigitated structure provides high emitter efficiency
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LXE16350X
MBC423
OT439A.
Transistor Equivalent list
diode IN4148
Transistor AND DIODE Equivalent list
copper permittivity
TRIMMER capacitor
by239-800
erie feedthrough capacitors
BDT85
IN4148
LXE16350X
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j78 transistor equivalent
Abstract: Transistor Equivalent list j160 capacitor philips transistor BD239 equivalent bd239 equivalent J6 transistor BD239 BY239 LLE16045X SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor LLE16045X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR amplifier. • Interdigitated structure provides
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LLE16045X
OT437A.
j78 transistor equivalent
Transistor Equivalent list
j160 capacitor philips
transistor BD239 equivalent
bd239 equivalent
J6 transistor
BD239
BY239
LLE16045X
SC15
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diode BY239
Abstract: Transistor Equivalent list BY239 Transistor AND DIODE Equivalent list philips ferrite 4b1 erie 1250-003 copper permittivity BDT91 LLE15370X SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor FEA TU R ES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high V S W R • Interdigitated structure provides high emitter efficiency
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LLE15370X
OT437A.
diode BY239
Transistor Equivalent list
BY239
Transistor AND DIODE Equivalent list
philips ferrite 4b1
erie 1250-003
copper permittivity
BDT91
LLE15370X
SC15
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m 32 ab transistor
Abstract: mlc444 bd239 equivalent
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated common-emitter structure provides high emitter
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LXE15450X
m 32 ab transistor
mlc444
bd239 equivalent
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diode BY239
Abstract: bd239 equivalent Transistor Equivalent list MLC446 copper permittivity 43081 BD239 BY239 LXE15450X SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor LXE15450X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VS W R amplifier. • Interdigitated common-emitter
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LXE15450X
MLC446
OT439A.
diode BY239
bd239 equivalent
Transistor Equivalent list
MLC446
copper permittivity
43081
BD239
BY239
LXE15450X
SC15
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philips ferrite material specifications 12nc
Abstract: Class E amplifier BDT91 BY239 LLE18150X Tekelec diode
Text: Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigltated structure provides high emitter efficiency
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LLE18150X
7110fi5b
philips ferrite material specifications 12nc
Class E amplifier
BDT91
BY239
LLE18150X
Tekelec diode
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diode IN4148
Abstract: Transistor Equivalent list BDT85 IN4148 LXE18300X SC15 1250-003 BY239-800 Transistor AND DIODE Equivalent list
Text: # I » IK DISCRETE SEMICONDUCTORS SG41EET L X E 1 83 00 X NPN silicon planar epitaxial microwave power transistor Preliminary specification File under Discrete Semiconductors, S C 1 5 January 1992 Philips Semiconductors PHILIPS • b b S B ^ l D03SÜ73 ‘•T‘1 ■
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LXE18300X
00350fll
diode IN4148
Transistor Equivalent list
BDT85
IN4148
LXE18300X
SC15
1250-003
BY239-800
Transistor AND DIODE Equivalent list
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Untitled
Abstract: No abstract text available
Text: * M * DISCRETE SEMICONDUCTORS LLE16350X NPN silicon planar epitaxial microwave power transistor Preliminary specification File under Discrete Semiconductors, SC15 October 1992 Philips Semiconductors PHILIPS bbS3T31 003301b ^ P h ilip s S em iconductors P relim inary sp e cifica tio n
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LLE16350X
bbS3T31
003301b
33Q2M
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s3331
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS LXEE18300X NPN silicon planar epitaxial microwave power transistor Preliminary specification File under Discrete Semiconductors, SC15 January 1992 Philips Semiconductors o PHILIPS bt,S3331 0035073 MTS Prelim inary specification PhiMps Semiconductors
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LXEE18300X
S3331
LXE18300X
350fll
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cb pj 47 diode
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b^E J> bbS3T31 DD3227fl 070 H A P X Product specification Philips Semiconductors NPN silicon planar epitaxial microwave power transistor _ LFE15600X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors
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bbS3T31
DD3227fl
LFE15600X
cb pj 47 diode
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