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    DIODE BY 399 ITT Search Results

    DIODE BY 399 ITT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE BY 399 ITT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MAGNUS 12 x 1.25 Gbps Parallel Optical Transmitter/Receiver PL-TCP-00-S93 Transmitter PL-RCP-00-S93 Receiver The MAGNUS parallel optical interconnect is a transmitter/ receiver pair operating with 12 channels at 1.25 Gbps for an aggregate bandwidth of 15 Gbps. The parallel modules


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    PDF PL-TCP-00-S93 PL-RCP-00-S93

    CQP410L

    Abstract: COP420L COP452 200-SK COP400 COP399N COP420 COPS
    Text: COP498/COP398/COP499/COP399 National Æ jA Semiconductor COP498/COP398 Low Power CMOS RAM and Timer RAT ' COP499/COP399 Low Power CMOS Memory General Description Features The COP498/398 Low Power CMOS RAM and Timer (RAT) and the COP499/399 Memory are peripheral members of


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    PDF COP498/COP398 COP499/COP399 COP498/398 COP499/399 COP499 COP401L/COP402/COP404L) TL/DD/6684-11 COP49B/COP499 TL/DD/6684-12 CQP410L COP420L COP452 200-SK COP400 COP399N COP420 COPS

    HA 3089

    Abstract: ic 7500 "Photo Interrupter" dual transistor 3045 PT photon coupled interrupter nte 3100 npn zero crossing triac FT DARLINGTON TRANSISTOR npn transistor photon coupled interrupter 3101 PT 1300 phototransistor
    Text: ì mm NI T E E L E C T R O N I C S NTE TYPE WX OESCNPTtON 3039 Lite/Dark Switch -v INC 1 ?E ^ HAX SUPPLY VOUAGE DIAS NO. * K : • baiasi G O O l T b ö =1 ■ V MAX OUTPUT VOLTAGE ’ (V) HAX OUTPUT CURRENT (mA) . vcc v0UT 15 15 176 . UGHT THRESHOLD LEVEL


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    2SC3054

    Abstract: BY 399 DIODE diode BY 399
    Text: Power T ransistors 2SC3054 2SC3054 Silicon NPN Triple-Diffused Junction Mesa Darlington Type High Breakdown Voltage, High Speed Switching • Features ■ Package Dimensions • High breakdow n voltage and high reliability by glass passivation • High DC cu rren t gain hFE


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    PDF 2SC3054 Tc-100 10VX0 10VX1A 100X100X2mm 2SC3054 BY 399 DIODE diode BY 399

    Untitled

    Abstract: No abstract text available
    Text: • 7 0 2 0 ^ DGDÖ251 IMS ■ R H H iz > ^/Sensors RPI-241 RPI-241 Photointerrupter -b > • i^ ffi^äH /D im en sio n s U nit: mm RPI-241 t h I■ 2 9 K, I ' Z 7 > i ' Z $ K5T -r ? - ^ > $ 7 ^ * V t o -f > * RPI-241 Is compact size photointerrup­ ter which adopted insert mold. IR diode


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    PDF RPI-241 RPI-241

    pj 809

    Abstract: PJ 969 diode PJ 986 diode 047 pj 986 diode EM- 534 motor PJ 969 GE 639
    Text: fffi HARRIS C iI s E M , co N D u cToB HGTH12N40C1D, HGTH12N40E1D HGTH12N50C 1D , HGTH12N50E1D 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package Features • JEDEC TO-218AC TOP VIEW 12 Amp, 400 and 500 Volt • V ce ON ‘ 2.5V Max.


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    PDF HGTH12N40C1D, HGTH12N40E1D HGTH12N50C HGTH12N50E1D O-218AC HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D pj 809 PJ 969 diode PJ 986 diode 047 pj 986 diode EM- 534 motor PJ 969 GE 639

    Untitled

    Abstract: No abstract text available
    Text: DUAL FVLL-BRIDGE M OTOR DRIVER As an interface between low-level logic and solenoids, brushless dc motors, or stepper motors, the UDN2998W dual full-bridge driver will operate inductive loads up to 50 V with continuous output currents of up to 2 A per bridge or peak start-up currents to 3 A. The control


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    PDF UDN2998W 0S0433Ã 05G433fl GG07fl3b

    Untitled

    Abstract: No abstract text available
    Text: 2961 HIGH-C ZJBRENT HALF-BRIDGE PRINTHEAD/MOTOR DRIVER— W ITH INTERNAL CURRENT SENSING AND CONTROL The UDN2961B and UDN2961W are 3.4 A half bridges designed specifically for driving solenoid printheads, stepper motors, and dc motors. The UDN2961B/W consists of a power source driver output,


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    PDF UDN2961B UDN2961W UDN2961B/W N2961B

    HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET

    Abstract: 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D
    Text: M A G IMA r^ T E C BUZ 900D BUZ 9 0 1 D NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIG H POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SW ITCHING N - CHANNEL POWER MOSFET SEMEFAB DESIG NED AND DIFFUSED


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    PDF BUZ905D BUZ906D -100mA -160V -200V HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D

    h1208

    Abstract: equivalent transistor c 495 92CS-223S5 TA8340 radiosonde NYTRONICS choke Allen-Bradley carbon resistor H-1208 92CM-22389 Nytronics relay
    Text: File No. 679 RF Pow er T ra n s is to rs Solid State o 8*0" 41038 750-mW, 1.68-GHz Oscillator Transistor Features: • Emitter-ballasting resistors ■ 750-rnW oscillator power at 1.68 GHz 20 V ■ Collector connected to case ■ For coaxial, stripline, and


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    PDF H-1208 750-mW, 68-GHz 750-rnW TA8340. h1208 equivalent transistor c 495 92CS-223S5 TA8340 radiosonde NYTRONICS choke Allen-Bradley carbon resistor H-1208 92CM-22389 Nytronics relay

    74ls399

    Abstract: 74LS398
    Text: g MOTOROLA SN54LS/74LS398 SN54LS/74LS399 D E S C R IP T IO N — The S N 54 L S /7 4 L S 39 8 and S N 54 L S /7 4 L S 39 9 are Quad 2-Port Registers. They are th e logical equivalent of a quad 2-in p ut m ultiplexer follow ed by a quad 4 -bit edge-triggered register. A Common


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    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG150J1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 5 0 J 1 Z S 5 0 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. U nit in mm 2 -/6 .4 ± 0 .3 • The Electrodes are Isolated from Case. • High Input Impedance • Includes a Complete H alf Bridge in One


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    PDF MG150J1ZS50

    Untitled

    Abstract: No abstract text available
    Text: 'V Latch-Up H EÏO N IJ PERFO RM A N CE LATCH-UP CIRCUIT Latch-up is cau sed by an SCR S ilico n C o n trolled R ectifier circuit. F ab rication o f CMOS integrated circuits w ith bulk silicon p ro cessin g crea tes a parasitic SCR structure. T h e b eh a v io r o f


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    PDF 14105C-001

    Untitled

    Abstract: No abstract text available
    Text: as * * DUAL 4-BIT ADDRESSABLE LACTH DESCRIPTION The T54LS256/T74LS256 is a Dual 4-Bit Addres­ sable Latch with common control inputs; these in­ clude two Address inputs Ao, A t , an active LOW Enable input (E) and an active LOW Clear input (C). Each latch has a Data input (D) and four outputs


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    PDF T54LS256/T74LS256

    smd transistor NG

    Abstract: No abstract text available
    Text: FSYE13A0D, FSYE13A0R M ay 1999 D ata S h eet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs T h e D iscrete Products O pe ra tio n of Harris Sem ico n du cto r has d evelo ped a s e ries of R adiation H a rd e n e d M O S F E T s specifically d esig n ed for c o m m ercial and m ilitary spa c e


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    PDF FSYE13A0D, FSYE13A0R 1-800-4-HARRIS smd transistor NG

    Untitled

    Abstract: No abstract text available
    Text: FSYE23A0D, FSYE23A0R M ay 1999 D ata S h eet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs T h e D iscrete Products O pe ra tio n of Harris Sem ico n du cto r has d evelo ped a s e ries of R adiation H a rd e n e d M O S F E T s File N u m b er


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    PDF FSYE23A0D, FSYE23A0R 1-800-4-HARRIS

    str-f6654 PIN CONFIGURATION

    Abstract: STR-F6654 STR-f6656 diagram STRF6653 strf6676 STRF6654 str SMPS CIRCUIT DIAGRAM STRF6656 str-f6676 STR-F6600
    Text: STR-F6600 Series MicroSystems Europe Ltd. SMPS PRIMARY IC. X n n K i£ 0 Features ♦ Greatly R educed Parts Count ♦ Rugged Avalanche Rated MOSFET ♦ Choice of MOSFET Voltage and Rds on ♦ Flyback Operation with Quasi-Resonant Soft Switching for Low D issipation & EM I


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    PDF STR-F6600 400uA up6600 STR-F6654 STR-F6672 STR-F6676 str-f6654 PIN CONFIGURATION STR-F6654 STR-f6656 diagram STRF6653 strf6676 STRF6654 str SMPS CIRCUIT DIAGRAM STRF6656 str-f6676

    sem 2105 16 pin

    Abstract: DQ02-1 7885M
    Text: T02bfl72 DDD2173 flS2 • TH 7885M FULL FIELD CCD IMAGE SENSOR 1024x256 PIXELS MULTI-PINNED PHASE MODE MPP ■ Designed for spectroscopy. ■ Very low dark signal: 0.3 e~/pixel.sat -4 0 °C . VDD1 ^ P 4 ■ Optimized for high detectivity: output noise = 4 electrons.


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    PDF T02bfl72 DDD2173 7885M 1024x256 sem 2105 16 pin DQ02-1 7885M

    81c176

    Abstract: No abstract text available
    Text: a Preliminary Am81C176 Advanced Micro Devices CMOS Color Palette DISTINCTIVE CHARACTERISTICS • Plug-In Replacement for Inmos G171 and G176 a Triple 6-blt Dlgital-to-Analog Converters DACs ■ RS-170A compatible RGB outputs ■ VGA hardware and software compatible


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    PDF Am81C176 28-pin 32-pin RS-170A 1912-017A 81c176

    Untitled

    Abstract: No abstract text available
    Text: MP7690 CMOS Programmable Input Range 8-Bit High Speed Analog-to-Digital Converter ¡T E X A R FEATURES BENEFITS • • • • • • • • • Reduced Board Space small package Sampling Rates from 1 kHz to 15 MHz (MSPS) DNL better than 1/2 LSB from 1 kHz to 10 MHz


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    PDF MP7690 MP7690A MP7690

    diode BY 399 itt

    Abstract: Q20P010 M/Q20P025
    Text: DEVICE SPECIFICATION ECL/TTL “TURBO ” LOGIC ARRAYS WITH PHASE-LOCKED LOOP Q20P010/Q20P025 FEATURES On-chip high frequency phase-locked loop Up to 1.25 GHz capability Edge jitter as low as 50 ps pk-pk 900 and 3000 gates of customizable digital logic Utilizes proven Q20000* Series macro library


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    PDF Q20000* 10Ops TogP010 Q20P025 ii11n iiii111n Q20P010 Q20P025 0001b23 diode BY 399 itt M/Q20P025

    Untitled

    Abstract: No abstract text available
    Text: w GEC PLESSEY OCTOBER 1996 ADVANCE INFORMATION S E M I C O N D U C T O R S KESRX01 290 - 460MHz ASK RECEIVER Supersedes Septem ber 1995 version, D S 3968 -1 .5 The KESRX01 is a single chip ASK (Amplitude Shift Key) Receiver IC. It is designed to operate in a variety of low power


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    PDF KESRX01 460MHz KESRX01 50Kbits/sec 37b65Z2

    Untitled

    Abstract: No abstract text available
    Text: FSF055D, FSF055R 25A, 60V, 0.020 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 25A, 60V, ros ON = 0-020S2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


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    PDF FSF055D, FSF055R 0-020S2 36MeV/mg/cm2 100KA MIL-S-19500

    W1P 59 transistor

    Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
    Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


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    PDF 197/197X S310N W1P 59 transistor W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn