Untitled
Abstract: No abstract text available
Text: > dM C C M IC R O P O W E R S T A N D A R D C E L L 3 .3 V / 5V FEATURES • Operating Frequencies Up to 2.5GHz • Up to 4,000 Internal Gates and 200 l/Os • Cell Based Architecture • 1 Micron Bipolar Process, 3 Layer Interconnect • 10Ops Equivalent Gate Delays
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10Ops
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Untitled
Abstract: No abstract text available
Text: MP7651 M Micro Power Systems 8-Channel High-Speed Non-Inverting 10 M Hz Input Bandwidth 8-Bit DACs with Output Buffer and Serial Digital Data Port and Internal Chip Address Decoder FEATURES • 8 Independent 2-Quadrant Multiplying 8-Bit DACs • Serial Digital Input Data and Address Port 3-Wire
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MP7651
150ns
150mW
SOIC22.
10mV/DIV)
64den
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Untitled
Abstract: No abstract text available
Text: i g im O rder this data sheet by M C 10E 1652/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual ECL O utput C om parator W ith Latch • • • • • • • M C 10E 1652 Typical 3.0 dB Bandwidth > 1.0 GHz Typical V to Q Propagation Delay of 775 ps Typical Output Rise/Fall of 350 ps
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1652/D
10E1652
MC10E1651
MC1651
avai00
3PHX32014-0
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Untitled
Abstract: No abstract text available
Text: EDI444097C-RP ^EDI 4Megx4 Fast Page DRAM Ruggedized Plastic ELECTRONIC DESIGNS, INC 4 Megabit x 4 Dynamic RAM 5V, Fast Page Features EDI's ruggedized plastic 4Mx4 DRAM allows the user to capitalize on the cost advantage of using a plastic compo 4 Meg x 4 bit CMOS Dynamic
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EDI444097C-RP
EDI444097C60SI
EDI444097C70SI
24126Plastic
EDI444097C-RP
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Untitled
Abstract: No abstract text available
Text: Or, Call Customer Service at 1-800-548-6132 USA Only 4-20mA Current Transmitter with BRIDGE EXCITATION AND LINEARIZATION FEATURES APPLICATIONS • LESS THAN +1% TOTAL ADJUSTED ERROR, -4 0 C TO +85°C • BRIDGE EXCITATION AND LINEARIZATION • WIDE SUPPLY RANGE: 9V to 40V
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4-20mA
50ppm/Â
110dB
XTR104
XTR104
4-20mA,
1N4753A
D05fl3fll
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SC10000
Abstract: diode AN2A
Text: TEKTRONIX INC/ TRI ÖUINT 2bE T> EU Ô^GbSlfl 0000b3û 0 Q T R ü " P 4 2 - U - 0 » ïM û i G ig a B it L o g ic SC10Q00 GaAs Standard Cell Array S C 1 0 0 0 0 D E S C R IP T IO N T h e S C 1 0 0 0 0 S tandard Cell Array is ideal for the developm ent of low power, high perform ance V LS I
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0000b3û
SC10Q00
050P3
SC10000
diode AN2A
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Untitled
Abstract: No abstract text available
Text: 43E J> ÛEC PLESSEY SEMICONDS B 37bfl522 Ü012b42 T O P L S B GS EEMCI C OPNLD EU CSTSO ER SY 'T'51-qoi-OS 2091-1.0 SP98608 8-BIT LATCHED 450MHz MULTIPLYING D-A CONVERTER T h e SP98608 is an EC L 10K com patible 8-bit latched D AC . T h e 2.2nsec settling tim e allows a 450 m egasam ple per
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37bfl522
012b42
51-qoi-OS
SP98608
450MHz
SP98608
37bflS55
T-51-09-08
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Skew CMOS PLL 68060 Clock Driver The MC88LV926 Clock Driver utilizes phase-locked loop technology to lock Its low skew outputs’ frequency and phase onto an input reference clock. It Is designed to provide clock distribution for CISC microprocessor
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MC88LV926
MC68/EC/LC030/040/060
88LV926
MC88LV926
20-PIN
MC88L
BR1333
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C 88915 Low S kew CMOS PLL Clock Driver The MC88915 Clock Driver utilizes phase-locked loop technology to lock its low skew outputs’ frequency and phase onto an input reference clock. It is designed to provide clock
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MC88915
b3b7252
BR1333
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SONY OPTICAL PICK-UP 313
Abstract: DA0601 CXA1372 CXD2510Q DA11 DA16 CXD251OQ 47latch 63A23
Text: SONY CXD2510Q CD Digital Signal Processor D escription The CXD2510Q is a digital signal processor LSI for CD players and is equipped with the following functions. • Wide frame jitter margin ±28 frames due to a builtin 32K RAM • Bit clock, which strobes the EFM signal, is
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CXD2510Q
CXD2510Q
80PIN
QFP-80P-L01
P-1420-A
fl3fl23fl3
SONY OPTICAL PICK-UP 313
DA0601
CXA1372
DA11
DA16
CXD251OQ
47latch
63A23
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M27C4002
Abstract: 1N914 PLCC44 Q0-Q15
Text: rZ 7 ^ 7 m» SG S-THO M SO N M27C4002 liS U @ ji@ llL lI ( § V ji lf ilD i 4 Megabit (256K x 16 UV EPROM and OTP ROM > VERY FAST ACCESS TIME: 80ns - COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE • LOW POWER "CMOS” CONSUMPTION: - Active Current 50mA at 5MHz
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M27C4002
10OjxA
24sec.
M27C4002
JLCC44W
1N914
PLCC44
Q0-Q15
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"Electronic designs inc"
Abstract: 24128 EDI414097C70BB EDI414097C70LZB EDI414097C70LZI EDI414097C80BB EDI414097C80LZB
Text: ^EDI EDI414097C 4Megx1 Fast Page DRAM ELECTRONIC DESIGNS, INC ' 4Megabitx 1 Dynamic RAM CMOS, Monolithic The EDI414097C is a high performance, low power CMOS Dynamic RAM organized as 4Megabit x1. During Read and Write cycles each bit is addressed through 22 address bits which are entered 11 at a time A0
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EDI414097C
100ns
EDI414097C
"Electronic designs inc"
24128
EDI414097C70BB
EDI414097C70LZB
EDI414097C70LZI
EDI414097C80BB
EDI414097C80LZB
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LDH46A702C
Abstract: LDH46A103C LDH36A401A B -400 LDH46A252B
Text: MONOLITHIC DEVICES DELAY LINES, CHIP MONOLITHIC la m LDH Series This delay line has been developed by utilizing advanced m ultilayer technology. It is comprised of a copper line and tem perature compensated dielectric NPO 0 ± 60ppm/°C and includes a metal shield. This results in a very small
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60ppm/
LDH36
100MHz
100mA
25xDT
100MHz.
900pS
130MHz
LDH36-01A401AB
LDH46A702C
LDH46A103C
LDH36A401A B -400
LDH46A252B
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4-Bit Serial/Parallel Converter MC10E445 MC100E445 The M C 10/100E445 is an integrated 4-bit serial to parallel data converter. The device is designed to operate for N RZ data rates of up to 2.0Gb/s. The chip generates a divide by 4 and a divide by 8 clock for both
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10/100E445
1150ps
CL78a
DL140
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Untitled
Abstract: No abstract text available
Text: <J X >G e n e r a l v PLVA26xxA Series S e m ic o n d u c t o r Dual Low-Voltage Avalanche Regulator Diodes Vz Range 5.0 to 6.8V Total Power Dissipation 250mW Mechanical Data_ Features_ Case: SO T-23 Plastic Package • Very low dynam ic im pedance at low currents
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PLVA26xxA
250mW
E8/10K
10Ops;
100ps,
dissipatiVA2650A
PLVA2653A
PLVA2656A
PLVA2659A
PLVA2662A
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Untitled
Abstract: No abstract text available
Text: GEC P L E S S E Y [SEMI C O N D U C T O R S I 2138-1.0 SP93808 SUB-NANOSECOND OCTAL COMPARATOR The S P 93808 c o n ta in s e ig h t in d e p e n d e n t m atch e d u ltra h ig h speed c o m p a ra to rs. Each c o m p a ra to r is fo llo w e d b y a latch w h ich m ay be used to sam ple the
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SP93808
SP93808
SP92701
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CD4051 ic 16 pin diagram
Abstract: LT1220
Text: U IT O TECHNOLOGY D € S C R IP T IO n The LTC1273/LTC1275/LTC1276 are 300ksps, sampling 12-bit A/D converters that draw only 75mW from single 5V or ±5V supplies. These easy-to-use devices come complete with 600ns sample-and-holds, precision refer ences and internally trimmed clocks. Unipolar and bipo
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LTC1273
LTC1275XLTC1276
12-Bit,
300ksps
LTC1273/LTC1275/LTC1276
300ksps,
12-bit
600ns
25ppm/
CD4051 ic 16 pin diagram
LT1220
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Untitled
Abstract: No abstract text available
Text: molate 256K X 8 CMOS Vìdeo RAM MVM8256X-10/12/15 Issue 1.2 : January 1993 S e m ic o n d u c to r ADVANCE PRODUCT INFORMATION ' 262,144 x 8 CMOS Video RAM \ Pin Definition Package Type - ’VX’ Features RAM Access Times of 100,120,150 ns SAM Access Times of 35,40,50 ns
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MVM8256X-10/12/15
MIL-STD-883,
SI/01
SI/02
SI/03
MVM8256VMB-10
MIL-STD-883
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Untitled
Abstract: No abstract text available
Text: vcxo DIP TYPE SVA FULL - Voltage Controlled Crystal Oscillator - HCMOS/TTL output - 3.3 / 5.0 supply voltage -14 pin DIP package - Custom lead length options available - Wide frequency and pull range • ELECTRICAL SPECIFICATIONS Frequency Range 1.000 to 200.000MHz
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000MHz
150ppm
200ppm
65Vdc
65VDc
000MHz
10ppm
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20.000mhz
Abstract: No abstract text available
Text: vcxo CERAMIC SMD TYPE SVH - Ceramic SMD package - Voltage Controlled Crystal Oscillator - 5.0 / 3.3 / 2.5 supply voltage - HCMOS/TTL output - Stabillity to ± 20ppm - Tri-state function available - Reflow soldering is possible - Available on tape and reel
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20ppm
000MHz
or-40
000MHz,
at25t!
20.000mhz
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PJ 1169
Abstract: No abstract text available
Text: USER’S MANUAL O f C Corporation 1 9 9 4 ,1 9 9 5 .1 9 9 6 NEC Document No. M10339EJ3V0UM00 3rd edition Date Published July 1996 P Printed in Japan Rambus Is a trademark of Rambus Inc. The Information In this document is subject to change without notice.
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M10339EJ3V0UM00
PJ 1169
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Untitled
Abstract: No abstract text available
Text: 19-3950; Rev 0; 6/91 y i / i y j x i y i / i Com plete, 8-Channel9 12-Bit Data-Acquisition System s _ F e a tu re s TheM AX180/M AX181 are com plete 12-bit Data A cquisition System DAS w hich com bine 8/6-channel input multi
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12-Bit
AX180/M
AX181
12-bit
MAX180/MAX181
100kHz
16-bit
1/2L60â
MAX180
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Calex
Abstract: No abstract text available
Text: C/ILEX 6 WATT LV SERIES SINGLE OUTPUT Universal 3.5 to 16 Volt Input Range Input Range V d c Model Max Vdc mA 5S5.1200LV 3.5 16 5 1200 Fully Isolated, Filtered Design 5S12.500LV 3.5 16 12 500 -40 to 85°C Operation 5S15.400LV 3.5 16 15 400 Efficiencies to 77%
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300pF
1200LV
500LV
400LV
1680mA
500LVC
16Vdc
100kHz
Calex
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13 Mhz mosfet
Abstract: No abstract text available
Text: ^SEM TECH ti Today’s Results.tomorrow's Visio OBJECTIVE - October 29, 1998 HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER T E L805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com DESCRIPTION FEATURES The SC1405 is a Dual-MOSFET Driver with an internal
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SC1405
L805-498-2111
SC1405
3000pF
TSSOP-14
13 Mhz mosfet
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