Diode Motorola 711 2N2905A
Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
MV2103
Diode Motorola 711 2N2905A
pin configuration transistor BC547 2N2222
BC237
2N555
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MAD130P
Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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MMAD1108
De218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MAD130P
2N1711 solid state
BC237
MARKING CODE diode sod123 t3
H3T-B
MPS4258
bf244
MSA1022
Bf391
BCY72
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BY 255 diode
Abstract: DIODE BY 255 rectifier diode do-201 diode do-201
Text: BY 251.BY 255 Type Repetitive peak reverse voltage Surge peak reverse voltage Max. reverse recovery time Max. forward voltage IF = - A IR = - A IRR = - A Axial lead diode Standard silicon rectifier diodes BY 251.BY 255 Forward Current: 3 A Reverse Voltage: 200 to 1300 V
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DO-201
MIL-STD-750
BY 255 diode
DIODE BY 255
rectifier diode do-201
diode do-201
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2N643
Abstract: BC237 MARKING DP SOT-363 DO204AA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1010LT1
MMBD2010T1
MMBD3010T1
MMBD1010LT1
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
2N643
BC237
MARKING DP SOT-363
DO204AA
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BC237
Abstract: MMBD2005T1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1005LT1
MMBD2005T1
MMBD3005T1
MMBD1005LT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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marking dp sot363
Abstract: BC237 transistor BF245 A marking A5 sot363 2N2222A plastic bc849 MMBD1010LT1 bf245 equivalent marking code a5 sot363
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1010LT1
MMBD2010T1
MMBD3010T1
MMBD1010LT1
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
marking dp sot363
BC237
transistor BF245 A
marking A5 sot363
2N2222A plastic
bc849
bf245 equivalent
marking code a5 sot363
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2N301
Abstract: BC237 5111 sot-23 BC547 sot package sot-23 2N5670 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1005LT1
MMBD2005T1
MMBD3005T1
MMBD1005LT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
2N301
BC237
5111 sot-23
BC547 sot package sot-23
2N5670 equivalent
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BC237
Abstract: msc2295 MPS2369 equivalent BC547 sot package sot-23 MMBD1000
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste
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MMBD1000LT1
MMBD2000T1
MMBD3000T1
MMSD1000T1
MMBD1000LT1
OT-23
O-236AB)
V218A
MSC1621T1
MSC2404
BC237
msc2295
MPS2369 equivalent
BC547 sot package sot-23
MMBD1000
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BC237
Abstract: MPSA06 346
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste
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MMBD1000LT1
MMBD2000T1
MMBD3000T1
MMSD1000T1
MMBD1000LT1
OT-23
O-236AB)
V218A
MSC1621T1
MSC2404
BC237
MPSA06 346
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DIODE BZX
Abstract: BZX5V1 BZX55C6V2 spice model zener BZX 55c 5v1 BZX30 diode zener 5v1 55c MODEL ZENER 5V1 diode zener 3v6 bzx 55c Zener diode bzx diode zener BZX 55C
Text: BZX55_PSpice VISHAY Vishay Semiconductors BZX55 Spice Parameters BZX55C3V6 BZX55C5V1 * Technology: DISCRETE DEVICE * Device: Zener Diode BZX 55C 3V6 * Type: Typical nom * Model established: 12.11.1996, by S.Reuter, TM1iC63-HN * Wafer: * Remarks: Macro model
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BZX55
BZX55C3V6
BZX55C5V1
TM1iC63-HN
D-74025
25-Nov-03
DIODE BZX
BZX5V1
BZX55C6V2 spice model
zener BZX 55c 5v1
BZX30
diode zener 5v1 55c
MODEL ZENER 5V1
diode zener 3v6 bzx 55c
Zener diode bzx
diode zener BZX 55C
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Untitled
Abstract: No abstract text available
Text: TVS Diode Axial Leaded – 30000W > 30KPA series 30KPA Series RoHS Description Uni-directional The 30KPA Series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.
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0000W
30KPA
E230531
0000W
30KPAxxxXX
30KPAxxxXX-B
RS-296E
DM-0016
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453gb12e4s
Abstract: SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c
Text: Application Note AN-9001 Revision: 01 Issue Date: 2009-03-01 Prepared by: Dr. Arendt Wintrich Key Words: IGBT, Trench4, Switching Behaviour, Cross Reference IGBT4 and free wheeling diode CAL4 in IGBT modules General properties . 1
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AN-9001
453gb12e4s
SEMIX 71GD12E4S
300gb12e4
igbt cross-reference
SKM200GB128D
SEMiX 202GB12E4s
SEMiX453GB12E4
101GD12E4s
IGBT cross reference semikron
303GD12E4-c
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Diode P600 equivalent
Abstract: No abstract text available
Text: TVS Diode Axial Leaded – 15000W > 15KPA series 15KPA Series RoHS Description The 15KPA Series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. Uni-directional
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5000W
15KPA
E128662/E230531
to150
15KPAxxxXX
15KPAxxxXX-B
RS-296E
DM-0016
Diode P600 equivalent
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CMPD7000
Abstract: transistor C5C C5c SOT-23
Text: Central Central TM TM Semiconductor SemiconductorCorp. Corp. CMPD7000 DUAL SILICON SWITCHING DIODE SERIES CONNECTION DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD7000 type is an ultra-high speed silicon switching diodes manufactured by the epitaxial planar process, in an epoxy molded
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CMPD7000
CMPD7000
OT-23
125oC
100mA
28-Mar
transistor C5C
C5c SOT-23
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1N4960 JANTX
Abstract: 1N6637 JANTX 1N4954 1N4954US 1N4996 1N4996US 1N5968 1N5968US 1N5969 1N6632
Text: INCH POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 12 November 2008. MIL-PRF-19500/356K 12 August 2008 SUPERSEDING MIL-PRF-19500/356J 1 February 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR,
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MIL-PRF-19500/356K
MIL-PRF-19500/356J
1N4954
1N4996,
1N5968,
1N5969,
1N6632
1N6637,
1N4954US
1N4996US,
1N4960 JANTX
1N6637 JANTX
1N4996
1N4996US
1N5968
1N5968US
1N5969
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1N6392
Abstract: No abstract text available
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 24 February 2010. INCH-POUND MIL-PRF-19500/554E 24 November 2009 SUPERSEDING MIL-PRF-19500/554D 25 May 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER,
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MIL-PRF-19500/554E
MIL-PRF-19500/554D
1N6392,
MIL-PRF-19500.
1N6392
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DO213-AB color band
Abstract: No abstract text available
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 5 October 2006. MIL-PRF-19500/115L 5 July 2006 SUPERSEDING MIL-PRF-19500/115K 16 August 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR, TYPES
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MIL-PRF-19500/115L
MIL-PRF-19500/115K
1N3821A
1N3828A,
1N3016B
1N3051B,
1N3821A-1
1N3828A-1,
1N3016B-1
1N3051B-1,
DO213-AB color band
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FED-STD-H28 chamfer
Abstract: 1N6304 1N6305 1N6306 DO-203AB
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 January 2008. INCH-POUND MIL-PRF-19500/550C 18 October 2007 SUPERSEDING MIL-PRF-19500/550B 20 October 1998 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST-RECOVERY, HIGH CURRENT,
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MIL-PRF-19500/550C
MIL-PRF-19500/550B
1N6304,
1N6305,
1N6306,
MIL-PRF-19500.
FED-STD-H28 chamfer
1N6304
1N6305
1N6306
DO-203AB
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Untitled
Abstract: No abstract text available
Text: ICP Test Report Certification Packet Company name: Suzhou Good-Ark Electronics Co.,Ltd. Product Series: A-405R-1 Series Product #: Axial OJ Diode Issue Date: Sep 1 , 2012 It is hereby certified by Suzhou Goodark Electronics CO.,Ltd. that there is neither RoHS EU Directive
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2002/95/EC
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IRK E78996 701819-303ac
Abstract: Vishay Thyristor 162/12 I27900 E78996 rectifier module
Text: Bulletin I27117 rev. C 03/02 SERIES IRK.136, .142, .162 THYRISTOR/DIODE and THYRISTOR/THYRISTOR NEW INT-A-pak Power Modules Features 135 A 140 A 160 A High Voltage Electrically Isolated by DBC Ceramic Al 2 O 3 3500 V RMS Isolating Voltage Industrial Standard Package
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I27117
E78996
12-Mar-07
IRK E78996 701819-303ac
Vishay Thyristor 162/12
I27900
E78996 rectifier module
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28458
Abstract: kp902 RG-11 RSS075P03 9497 n9497
Text: SPICE PARAMETER RSS075P03 by ROHM TR Div. * RSS075P03 PMOSFET model * Date: 2006/10/04 * This model includes a diode between drain and source. *D G S .SUBCKT RSS075P03 1 2 3 M1 1 2 3 3 MOS_P D1 1 3 DREV .MODEL MOS_P PMOS + LEVEL=3 + L=2.0000E-6
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RSS075P03
RSS075P03
0000E-6
200E-6
000E-3
1588E-3
0000E6
0000E-9
28458
kp902
RG-11
9497
n9497
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PVI1050
Abstract: PVI5050 PVI5080
Text: Replaced by PVI-N Data Sheet No. PD 10029-G Series PVI Photovoltaic Isolator 5-10 Volt Output General Description Features The PVI Photovoltaic Isolator generates an electrically isolated DC voltage upon receipt of a DC input signal. The input of the PVI is a light-emitting diode
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10029-G
PVI1050
1200VDC
PVI5050
PVI5080
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Untitled
Abstract: No abstract text available
Text: Bulletin I27117 rev. C 03/02 SERIES IRK.136, .142, .162 THYRISTOR/DIODE and THYRISTOR/THYRISTOR NEW INT-A-pak Power Modules Features 135 A 140 A 160 A High Voltage Electrically Isolated by DBC Ceramic Al 2 O 3 3500 V RMS Isolating Voltage Industrial Standard Package
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I27117
E78996
08-Mar-07
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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OCR Scan
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