808 nm 1000 mw 2 pins
Abstract: Laser Diode 808 2 pin 1000 mw 808 nm 1000 mw 2 Wavelength Laser Diode 808 nm 100 mw peltier cooler 1000mW laser 1000mW laser diode chip thermistor medical device Laser Diode 808 2000 mw
Text: SLD323XT 1W High Power Laser Diode Description The SLD323XT is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achived by QW-SCH structure∗2.
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SLD323XT
SLD323XT
SLD300
65MAX
M-273
LO-10)
808 nm 1000 mw 2 pins
Laser Diode 808 2 pin 1000 mw
808 nm 1000 mw
2 Wavelength Laser Diode
808 nm 100 mw
peltier cooler
1000mW laser
1000mW laser diode
chip thermistor medical device
Laser Diode 808 2000 mw
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SLD300
Abstract: SLD323XT SLD323XT-1 SLD323XT-2 SLD323XT-21 SLD323XT-24 SLD323XT-3
Text: SLD323XT 1W High Power Laser Diode Description The SLD323XT is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achived by QW-SCH structure∗2.
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SLD323XT
SLD323XT
SLD300
M-273
LO-10)
65MAX
M-273
SLD323XT-1
SLD323XT-2
SLD323XT-21
SLD323XT-24
SLD323XT-3
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808 nm 100 mw
Abstract: SLD300 SLD323V SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-3 1000mW laser diode 808 nm 1000 mw
Text: SLD323V High Power Density 1W Laser Diode Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achieved by QW-SCH structure∗2.
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SLD323V
SLD323V
SLD300
M-248
LO-11)
808 nm 100 mw
SLD323V-1
SLD323V-2
SLD323V-21
SLD323V-24
SLD323V-3
1000mW laser diode
808 nm 1000 mw
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ultrafast igbt
Abstract: 1200-VOLT IGBT 50 amp 1000 volt calculation of IGBT snubber CPWR-AN03 Cree SiC MOSFET 12 VOLT 10 AMP smps 24 volt 10 amp smps power diode AN-11A
Text: Hard-Switched Silicon IGBTs? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes by Jim Richmond Replacing the Si Ultrafast soft-recovery diode used as the freewheeling component in hard-switched IGBT applications with a Silicon Carbide SiC Schottky diode reduces the switching losses in the diode by 80% and the switching
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of169
1200-volt
CPWR-AN03,
ultrafast igbt
IGBT 50 amp 1000 volt
calculation of IGBT snubber
CPWR-AN03
Cree SiC MOSFET
12 VOLT 10 AMP smps
24 volt 10 amp smps
power diode
AN-11A
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PG124S15
Abstract: No abstract text available
Text: PG124S15 10A (1500V / 10A ) Outline drawings, mm Fast recovery diode Ø3 _ 0,3 15.5+ 0.3 _ 0.3 5.5 + _ 0.3 3.5 + Applications _ 0.3 11 + _ 0.3 2+ 20min. Damper diode for high definition TV and high resolution display Insulated package by fully molding High voltage by mesa design
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PG124S15
20min.
PG123S[
PG124S15
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8kv DIODE
Abstract: marking 724G ITS 724G vx marking sot23-6 SP724AHTG
Text: TVS Diode Arrays SPA Family of Products General Purpose ESD Protection - SP724 Series SP724 Series 3pF 8kV Diode Array RoHS Pb GREEN Description The SP724 is comprised of bipolar SCR/diode structures to protect up to four independent lines by clamping
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SP724
20VDC.
OT23-6
OT-23
8kv DIODE
marking 724G
ITS 724G
vx marking sot23-6
SP724AHTG
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1090D
Abstract: 1000mW laser SLD300 SLD323V SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-25 SLD323V-3
Text: SLD323V High Power Density 1W Laser Diode Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be
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SLD323V
SLD323V
SLD300
M-248
LO-11)
1090D
1000mW laser
SLD323V-1
SLD323V-2
SLD323V-21
SLD323V-24
SLD323V-25
SLD323V-3
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808 nm 1000 mw
Abstract: 1000mW laser diode SLD300 SLD323V SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-25 SLD323V-3
Text: SLD323V High Power Density 1W Laser Diode Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be
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SLD323V
SLD323V
SLD300
structur00
M-248
LO-11)
808 nm 1000 mw
1000mW laser diode
SLD323V-1
SLD323V-2
SLD323V-21
SLD323V-24
SLD323V-25
SLD323V-3
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the calculation of the power dissipation for the igbt and the inverse diode in circuits
Abstract: AN4505 AN4506 Calculation of major IGBT operating parameters
Text: AN4504 Application Note AN4504 IGBT Ratings And Characteristics Application Note Replaces September 2000 version, AN4504-3.0 Load AN4504-3.1 July 2002 PNP VD applications this diode acts as a free-wheeling diode or as a protection diode. Fig. 2 illustrates the packages used by Dynex
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AN4504
AN4504
AN4504-3
the calculation of the power dissipation for the igbt and the inverse diode in circuits
AN4505
AN4506
Calculation of major IGBT operating parameters
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SLD323XT
Abstract: 1000mW laser SLD300 SLD323XT-1 SLD323XT-2 SLD323XT-21 SLD323XT-24 SLD323XT-25 SLD323XT-3 808 nm 1000 mw laser diode
Text: SLD323XT High Power Density 1W Laser Diode Description The SLD323XT is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be
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SLD323XT
SLD323XT
SLD300
65MAX
M-273
LO-10)
1000mW laser
SLD323XT-1
SLD323XT-2
SLD323XT-21
SLD323XT-24
SLD323XT-25
SLD323XT-3
808 nm 1000 mw laser diode
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Untitled
Abstract: No abstract text available
Text: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION I.Umezaki A K.Kurachi R Y.konishi E I.Umezaki M.Yamamoto V Nov.-18-2008 Oct.6.2003 HIGH VOLTAGE DIODE MODULE SPECIFICATION 1. Type Number
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RM600HE-90S
HVM-2006-A
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Untitled
Abstract: No abstract text available
Text: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION I.Umezaki A K.Kurachi R Y.konishi E I.Umezaki M.Yamamoto V Nov.-18-2008 Oct.6.2003 HIGH VOLTAGE DIODE MODULE SPECIFICATION 1. Type Number
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RM600HE-90S
HVM-2006-A
600A/Â
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Untitled
Abstract: No abstract text available
Text: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION S.Iura A K.Kurachi R I.Umezaki E H.Yamaguchi I.Umezaki V 11-Oct.-2005 Nov.-18-2008 HIGH VOLTAGE DIODE MODULE SPECIFICATION 1. Type Number
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11-Oct
RM1200DB-34S
HVM-2008-A
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Untitled
Abstract: No abstract text available
Text: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION I.Umezaki A K.Kurachi R E I.Umezaki M.Yamamoto V Nov.-18-2008 Nov.14.2002 HIGH VOLTAGE DIODE MODULE SPECIFICATION 1. Type Number RM1800HE-34S
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RM1800HE-34S
HVM-2001-A
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Untitled
Abstract: No abstract text available
Text: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION S.Iura A K.Kurachi R I.Umezaki E H.Yamaguchi I.Umezaki V 27-Sep.-2006 4-Feb.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM1200DG-66S
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27-Sep
RM1200DG-66S
HVM-2010-A
400A/Â
31-Jan
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MGW12N120D
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGW12N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247
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MGW12N120D/D
MGW12N120D
MGW12N120D
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MGY40N60D
Abstract: motorola 6810
Text: MOTOROLA Order this document by MGY40N60D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY40N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
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MGY40N60D/D
MGY40N60D
IGBTMGY40N60D/D
MGY40N60D
motorola 6810
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PDF
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Untitled
Abstract: No abstract text available
Text: Technische Information / Technical Information Schnelle Diode Fast Diode D 1331 SH 45T S Features • Specially designed for snubberless operation • 140°C maximum junction temperature • Low losses, soft recovery • Electroactive passivation by a-C:H
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Transistor motorola 418
Abstract: mosfet amp ic MGW12N120D 305 Power Mosfet MOTOROLA 305 Mosfet MOTOROLA Motorola 720 transistor
Text: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGW12N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247
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MGW12N120D/D
MGW12N120D
MGW12N120D/D*
Transistor motorola 418
mosfet amp ic
MGW12N120D
305 Power Mosfet MOTOROLA
305 Mosfet MOTOROLA
Motorola 720 transistor
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mgy20n120d
Abstract: IGBT 250 amp
Text: MOTOROLA Order this document by MGY20N120D/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode MGY20N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
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MGY20N120D/D
MGY20N120D
mgy20n120d
IGBT 250 amp
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laser 790 nm sony 8 mw
Abstract: No abstract text available
Text: SONY SLD323V High Power Density 1W Laser Diode Description The SLD 323V is a high power, gain-guided laser diode produced by M O C V D method*1. Com pared to the SLD 300 Series, this laser diode has a high brightness output with a doubled optical density which can be achieved by Q W -SC H structure*2.
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SS-00259,
SLD323V
net/Sonylnfo/procurementinfo/ss00259/
M-248
LO-11)
laser 790 nm sony 8 mw
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A546
Abstract: ERE42M-15 T-100X
Text: ERE42M -15I5A FAST RECOVERY DIODE Features Damper diode for high definition high resolution display. TV and Insulated package by fully m o l d in g . Connection Diagram High voltage by mesa design. • f t f lt f ld i . High reliability 1 Applications High speed switching.
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ERE42M-15I5A)
A546
ERE42M-15
T-100X
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ERE42M-15
Abstract: No abstract text available
Text: ERE42M -15I5A FAST RECO VERY DIODE Features Damper diode for high definition high resolution display. TV and Insulated package by fully m o l d in g . Connection Diagram High voltage by mesa design. • f t f lt f ld i . High reliability 1 Applications High speed switching.
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ERE42M-15I5A)
ERE42M-15
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Untitled
Abstract: No abstract text available
Text: DISC T Y P E DIODE SDF4000BA SD F4000BA rectification. is a Flat Pack Diode designed for high power • If av>— 4000A, Vrrm— 1200V • High Reliability by pressure mount construction. (Applications • High Power Rectifier • Welding Power Supply • Maximum Ratings
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SDF4000BA
F4000BA
SDF4000BA80
SDF4000BA100
SDF4000BA120
B-171
D00233Q
B-172
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