FCH20U10
Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode
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OD-123
O-220F-2pin
O-251
O-252)
O-220-2pin
O-220
O-220F
O-262
FCH20U10
niec FCHS10A12
FCU20A40
FCU10UC30
FCQ10U06
FSF05B60
SA10QA03
fchs20a08
10ERB20
FCQS30A045
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schottky barrier diode b22
Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode
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Original
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OD-123
O-220F-2pin
O-251
O-252)
O-220-2pin
O-220
O-220F
O-262
schottky barrier diode b22
FCH20U10
Schottky Diode B29
fcu20a40
10ERB20
niec FCHS10A12
FCQS10A065
EC30QSA045
FCHS10A12
fchs20a08
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LTC4098-3.6
Abstract: A20-LCD15.6 SXA-01GW-P0.6
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B39 MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current
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IFS75B12N3E4
428654F4
D3265
ECFC24
B32DC
CD3289
ECFC26
B32DC6
C36B3
1231423567896AB
LTC4098-3.6
A20-LCD15.6
SXA-01GW-P0.6
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diode F4 6A
Abstract: 4F36F123
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3E4_B39 MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current
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IFS100B12N3E4
428654F4
D3264
ECFC24
B32DC
D3692C
CD3288
ECFC26
B32DC6
6934F
diode F4 6A
4F36F123
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BC647
Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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MMBD4148
200MA
OT-23
MBR0540
OD-123
1000MA
DO-214AC
B340A
5245B
225MW
BC647
bc657
C1093
smd diode c644
DIODE SMD c336
BC679
BC625
smd diode C645
smd diode c640
smd diode R645
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PDF
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77C7
Abstract: 887c 1r12r
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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R222 smd
Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
Text: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP
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CA-001175
BA41-00418A
BA62-00194A
BA62-00306A
BA68-40005L
120OHM
143OHM/132MHZ
213OHM/390MHZ,
R222 smd
RA516-1
2007-000162
RA523-1
C627 SOT-23
smd R540
63MIL
d516 gp
SMD R618
SMD C548
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Untitled
Abstract: No abstract text available
Text: SOLID STATE D I V I S I O N LIGHT EMITTING DIODE LED Light Emitting Diode Light emitting diodes LEDs are opto-semiconductors that convert electric energy into light energy. Compared to semiconductor lasers (laser diodes or LD), LEDs offer advantages such
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DK-8381
KLED0002E01
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samsung r540
Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Text: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP
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ZD500
QF500
RHU002N06
200MA
OT-323
F820P
33x33mm
500MHz
K4J52324QC
512Mbit
samsung r540
Samsung R590
R721-R725
C732 SMD
10000NF
R616 R617
R714-R715
samsung r580
b16 r649
Smd q535
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24GHz Radar
Abstract: radar human detection BAT24-02LS cell phone detector components BAT63 BAT24 BAT63-02V BAT62-02LS diode ring mixer AECQ101
Text: Product Brief RF Schottky Diodes for High Frequency Detector, Mixer or Power Leveling General description • Excellent RF Schottky Diodes available as single, double, triple and quad Various diode configurations e. g. common anode, common cathode All products have additional guard-ring diode integrated on chip for overvoltage protection
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AECQ101)
24GHz
B132-H9117-X-X-7600
24GHz Radar
radar human detection
BAT24-02LS
cell phone detector components
BAT63
BAT24
BAT63-02V
BAT62-02LS
diode ring mixer
AECQ101
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet Customer： Product : Small Signal Schottky Diode-Standard Part No.: Issued Date: 11-Jan-11 Edition : REV.A VIKING TECH CORPORATION 光頡科技股份有限公司 VIKING TECH CORPORATION KAOHSIUNG BRANCH
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140W-F/B160W-F/B1100W-F/B1150W-F/B1200W-F
11-Jan-11
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Untitled
Abstract: No abstract text available
Text: Data Sheet Customer： Product : Small Signal Schottky Diode-Standard Part No.: B1200WS-F Issued Date: 11-Jan-11 Edition : REV.A VIKING TECH CORPORATION 光頡科技股份有限公司 VIKING TECH CORPORATION KAOHSIUNG BRANCH
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S-F/B140WS-F/B160WS-F/B1100WS-F/B1150WS-F
B1200WS-F
11-Jan-11
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet Customer： Product : Small Signal Schottky Diode-Low VF Part No.: B120LW/B130LW/B140LW Issued Date: 11-Jan-11 Edition : REV.A VIKING TECH CORPORATION 光頡科技股份有限公司 VIKING TECH CORPORATION KAOHSIUNG BRANCH 光頡科技股份有限公司高雄分公司
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B120LW/B130LW/B140LW
11-Jan-11
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Untitled
Abstract: No abstract text available
Text: Data Sheet Customer： Product : Small Signal Schottky Diode-Low VF Part No.: B120LLW-F/B130LLW-F/B140LLW-F Issued Date: 11-Jan-11 Edition : REV.A VIKING TECH CORPORATION 光頡科技股份有限公司 VIKING TECH CORPORATION KAOHSIUNG BRANCH 光頡科技股份有限公司高雄分公司
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B120LLW-F/B130LLW-F/B140LLW-F
11-Jan-11
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OZ 9983
Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —
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MBRB3030CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
OZ 9983
mbr3045pt transistor
940 629 MOTOROLA 220
Motorola marking code K 652 TO-220
MUR3030
TRANSISTOR BC 456
Diode Marking 1N4007 Motorola
1N2069
A14F diode
BYV33-45
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PDF
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freewheeling diode 5A
Abstract: B13007D JESD97 STB13007DT4 T0-263
Text: STB13007DT4 High voltage fast-switching NPN power transistor General features • Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range ■ High voltage capability ■ Integrated free-wheeling diode
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STB13007DT4
2002/93/EC
T0-263)
freewheeling diode 5A
B13007D
JESD97
STB13007DT4
T0-263
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smfb13
Abstract: marking B13 diode SCHOTTKY
Text: SEMICONDUCTOR SMFB13 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. E 2 FEATURES A B ・Repetitive Peak Reverse Voltage : VRRM=30V. ・Averge Output Rectitifed Current : IO=1.0A. ・Feak Forward Voltage : VFM=0.42V max.
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SMFB13
smfb13
marking B13 diode SCHOTTKY
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BB112
Abstract: TI F 540 D02B
Text: N AMER PHILIPS/ DIS CRETE tilE J> m bbSBTBl GQ2b3flG 370 HIA P X B13112 A SILICON PLANAR VARIABLE CAPACITANCE DIODE The B B 112 is a single 9 V variable capacitance diode in a plastic encapsulation for application in tuning circuits in a.m. receivers. The diodes are supplied in matched sets of three items.
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OCR Scan
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hb53131
BB112
BB112
OD-69
TI F 540
D02B
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PDF
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Untitled
Abstract: No abstract text available
Text: DIODE THREE PHASES BRIDGE TYPE DF20DB Power Diode Module D F 2 0 D B is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electri cally isolated from semiconductor elements for simple heatsink
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OCR Scan
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DF20DB
20Amp
DF20DB40
DF20D
B-132
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PDF
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Untitled
Abstract: No abstract text available
Text: DIODE T H R E E P H A S E S B R ID G E T Y P E DF3QAA UL;E76102(M) Power Diode Module D F 3 0 A A is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electri
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OCR Scan
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E76102
30Amp
DF30AA
B-134
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PDF
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Untitled
Abstract: No abstract text available
Text: DIODE T H R E E P H A S E S B R ID G E T Y P E DF30BA UL;E76102(M) Pow er Diode M odule D F 3 0 B A is designed for three phase full w ave rectification, w hich has six diodes connected in a three phase bridge configuration. T h e mounting base o f the module is electri
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OCR Scan
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DF30BA
E76102
7T11243
00022c
B-135
J1543
QQ025â
B-136
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PDF
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L7833
Abstract: 58A6 L78a L7834 L7815 L78a diode 69X1 L7B10 L7B11 L7B12
Text: SEMITRON INDUSTRIES LTD 43E J> m B137&&1 OOOOlb? 4 E3SLCB L7SERIES Hermetically Sealed Metal Packaged • Surge Suppressor Diode Voltage Range 5VI to 200 Volts 25 Watt Steady State ■1500 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS ■ A range of high power zener and avalanche surge
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OCR Scan
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sl37aa,
00Q0J
9305-F-080
L7B100
L7B11Ã
L7U20
L7B130
17BU0
L7B160
L7B300
L7833
58A6
L78a
L7834
L7815
L78a diode
69X1
L7B10
L7B11
L7B12
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PDF
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ic lm 807
Abstract: 2SD1728 SC-65
Text: Power Transistors 2SD1728 b135fl54 DO 11 Elb 7GS W P N C g PANASONIC INDL/ELEKÍ SEMI 2SD1728 h^E ]> Silicon PNP Triple-Diffused Planar Type Package Dim ensions Horizontal Deflection Output Unit-1 mm 15.5m ax. • Features 13.5max. • D am per diode built-in
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OCR Scan
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b135flS4
2SD1728
75kHz
10VX0
10VX1
ic lm 807
2SD1728
SC-65
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PDF
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b1316
Abstract: B131-6
Text: Transistor, PNP, Darlington pair 2 S B 1 3 1 6 F 5 Features • available in CPT F5 SC-63 package • package marking: B1316*Q , where ★ is hFE code and □ is lot number • Darlington connection provides high dc current gain (hFE) • damper diode is incorporated
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OCR Scan
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2SB1316F5
SC-63)
B1316
2SB1316F5
2SB1316F5,
B131-6
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