SDB310D
Abstract: 02 05 000 2501
Text: SDB310D Semiconductor Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • High reliability Ordering Information Type No. SDB310D Marking Package Code B1 SOD-323 unit : mm 1.25±0.1 0.3~0.35 Outline Dimensions 2.5±0.1 1.7±0.1
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SDB310D
OD-323
KSD-C002-000
SDB310D
02 05 000 2501
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marking a4 SOT-143
Abstract: SOT 143 footprint sc70-3 PCB PAD A5 sot-23 single DIODE 2805 diode bridge marking code C4 Sot 23-5 sot143 marking code A3
Text: Agilent HSMS-280x Surface Mount RF Schottky Barrier Diodes Data Sheet Features • Surface Mount Packages • High Breakdown Voltage • Low FIT Failure in Time Rate* Description/Applications Package Lead Code Identification, SOT-323 (Top View) These Schottky diodes are
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HSMS-280x
OT-323
HSMS-280x
OT-363
SC70-6
5989-2492EN
5989-4020EN
marking a4 SOT-143
SOT 143 footprint
sc70-3 PCB PAD
A5 sot-23 single DIODE
2805 diode bridge
marking code C4 Sot 23-5
sot143 marking code A3
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sod-323 diode MARKING CODE 4
Abstract: No abstract text available
Text: PRELIMINARY DATASHEET 200mW SOD-323 SURFACE MOUNT Small Outline Flat Lead Plastic Package Fast Switching Schottky Barrier Diode Absolute Maximum Ratings Symbol PD TSTG DEVICE MARKING CODE: Device Type BAT42WS BAT43WS TA = 25°C unless otherwise noted Parameter
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200mW
OD-323
BAT42WS
BAT43WS
sod-323 diode MARKING CODE 4
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5n52u equivalent
Abstract: 5N52U STD5N52U 5n52
Text: STD5N52U, STF5N52U N-channel 525 V, 1.25 Ω typ., 4.4 A UltraFASTmesh Power MOSFETs in DPAK and TO-220FP packages Datasheet - production data Features Order codes VDS RDS on max ID 525 V 1.5 Ω 4.4 A STD5N52U TAB PTOT 70 W STF5N52U • Outstanding dv/dt capability
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STD5N52U,
STF5N52U
O-220FP
STD5N52U
O-220FP
DocID15684
5n52u equivalent
5N52U
STD5N52U
5n52
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BGF120
Abstract: No abstract text available
Text: TVS Diodes Transient Voltage Suppressor Diodes BGF120A Dual Channel Ultra-Low Capacitance ESD Diode Datasheet Rev. 1.4, 2012-09-17 Final Power Management & Multimarket Edition 2012-09-17 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG
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BGF120A
BGF120
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Untitled
Abstract: No abstract text available
Text: STD45N10F7, STI45N10F7, STP45N10F7 N-channel 100 V, 0.0145 Ω typ., 45 A, STripFET VII DeepGATE™ Power MOSFETs in DPAK, I2PAK and TO-220 packages Datasheet - production data Features TAB TAB VDS RDS on max.(1) ID PTOT 100 V 0.018 Ω 45 A 60 W Order codes
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STD45N10F7,
STI45N10F7,
STP45N10F7
O-220
STD45N10F7
STI45N10F7
O-220
DocID024455
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2N60C
Abstract: fdu2n60c 305 marking code d-pak
Text: FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description • 1.9A, 600V, RDS on = 4.7Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 8.5 nC)
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FQD2N60C/FQU2N60C
FQD2N60C/FQU2N60C
FQU2N60C
FQU2N60CTLTU
FQU2N60CTU
2N60C
fdu2n60c
305 marking code d-pak
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STP6N80
Abstract: No abstract text available
Text: STB6N80K5, STD6N80K5, STI6N80K5, STP6N80K5 N-channel 800 V, 1.3 Ω typ., 4.5 A SuperMESH 5 Power MOSFET in D2PAK, DPAK, I2PAK and TO-220 packages Datasheet − preliminary data TAB Features TAB Order codes 3 1 3 1 STD6N80K5 STI6N80K5 TAB TAB RDS on max
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STB6N80K5,
STD6N80K5,
STI6N80K5,
STP6N80K5
O-220
STD6N80K5
STI6N80K5
STB6N80K5
STP6N80
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AN-260
Abstract: BGF137
Text: Hipac High performance passives and actives on chip BGF137 Integrated Fuse and TVS Protection BGF137 Data Sheet Revision 3.1, 2011-08-09 Final Industrial and Multi-Market Edition 2011-08-09 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG
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BGF137
IEC61000-4-2
AN-260
BGF137
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Untitled
Abstract: No abstract text available
Text: STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 N-channel 650 V, 0.09 Ω typ., 28 A MDmesh V Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB TAB Order codes 2 3 1 3 12 D2PAK VDS @ TJmax RDS on max ID 710 V
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STB34N65M5,
STI34N65M5,
STP34N65M5,
STW34N65M5
O-220
O-247
STB34N65M5
STI34N65M5
STP34N65M5
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1S2473 DIODE equivalent
Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Text: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5
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HSN278WK"
HZC10
HZC11
HZC12
HZC13
HZC15
HZC16
HZC18
HZC20
HZC22
1S2473 DIODE equivalent
1S2473 equivalent
diode cross reference 1s2473
DIODE marking S4 59A
marking 62N SOT23
1S2471 equivalent
UHF/VHF TV Tuner HITACHI
DIODE 1N4148 LL-34
DIODE ZENNER C25
1N52xx
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Untitled
Abstract: No abstract text available
Text: STD3N80K5, STF3N80K5, STP3N80K5, STU3N80K5 N-channel 800 V, 2.8 Ω typ., 2.5 A Zener-protected SuperMESH 5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet − preliminary data Features TAB Order codes 3 VDS RDS on max ID PTOT 1 STD3N80K5
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STD3N80K5,
STF3N80K5,
STP3N80K5,
STU3N80K5
O-220FP,
O-220
STD3N80K5
STF3N80K5
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5N60M
Abstract: No abstract text available
Text: STD5N60M2, STP5N60M2, STU5N60M2 N-channel 600 V, 1.26 Ω typ., 3.7 A MDmesh II Plus low Qg Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - preliminary data Features TAB Order codes 3 1 VDS @ TJmax RDS on max ID 650 V 1.4 Ω 3.7 A STD5N60M2
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STD5N60M2,
STP5N60M2,
STU5N60M2
O-220
STD5N60M2
STP5N60M2
O-220
DocID025318
5N60M
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Untitled
Abstract: No abstract text available
Text: STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 N-channel 600 V, 0.090 Ω typ., 26 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packages Datasheet - preliminary data Features TAB Order codes 3 12 3 2 VDS @ TJmax RDS on max
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STF33N60M2,
STI33N60M2,
STP33N60M2,
STW33N60M2
O-220FP,
O-220
O-247
O-220FP
STF33N60M2
STI33N60M2
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6N62K3
Abstract: 6N62K STP6N62K3 STD6N62K3 STF6N62K3 STU6N62K3 Marking STMicroelectronics zener diode STI6N62K3 Zener Diode ST 41 STP6N6
Text: STD6N62K3, STF6N62K3 STI6N62K3, STP6N62K3, STU6N62K3 N-channel 620 V, 0.95 Ω, 5.5 A SuperMESH3 Power MOSFET in IPAK, DPAK, TO-220,TO-220FP, I²PAK Features Order codes STD6N62K3 STF6N62K3 STI6N62K3 STP6N62K3 STU6N62K3 • VDSS 620 V RDS on max. < 1.2 Ω
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STD6N62K3,
STF6N62K3
STI6N62K3,
STP6N62K3,
STU6N62K3
O-220
O-220FP,
STD6N62K3
STI6N62K3
6N62K3
6N62K
STP6N62K3
STD6N62K3
STF6N62K3
STU6N62K3
Marking STMicroelectronics zener diode
STI6N62K3
Zener Diode ST 41
STP6N6
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Untitled
Abstract: No abstract text available
Text: STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus low Qg Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages Datasheet − production data Features TAB TAB Order codes 2 VDS @ TJmax RDS on max ID 650 V
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STB24N60M2,
STI24N60M2,
STP24N60M2,
STW24N60M2
O-220
O-247
STB24N60M2
STI24N60M2
STP24N60M2
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marking code 62z
Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Text: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX
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HVD141/142
HZU16
HZU10
HZU18
HZU11
HZU20
HZU12
HZU22
HZU13
HZU24
marking code 62z
philips surface mount zener diode v6
marking 68m sot 23-5
1S2473 equivalent
DIODE ROHM 3pin Marking A7
IPS302
marking 62z SOT23
diode S4 68a
1ss81 diode equivalent
1S2473 DIODE equivalent
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Untitled
Abstract: No abstract text available
Text: STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND N-channel 600 V, 0.145 Ω typ., 21 A, FDmesh II Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes VDSS @ Tjmax RDS on max ID 3 1 STB26NM60ND
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STB26NM60ND,
STF26NM60ND,
STP26NM60ND,
STW26NM60ND
O-220FP,
O-220
O-247
STB26NM60ND
STF26NM60ND
O-220FP
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schematic diagram of ip camera
Abstract: CSP marking code CM1230-02 CM1230-08CP CM1230-J2CP CM1230-02CP cm1-23024
Text: CM1230 2, 4, and 8-Channel Low-Capacitance ESD Protection Array Product Description The CM1230 is a family of 2, 4 and 8 channel, very low capacitance ESD protection diode arrays in a CSP form factor. It is ideal for protecting systems with high data and clock rates or for circuits that
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CM1230
CM1230/D
schematic diagram of ip camera
CSP marking code
CM1230-02
CM1230-08CP
CM1230-J2CP
CM1230-02CP
cm1-23024
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current Guard ring protected Low diode capacitance. LBAS40XLT1G 3 APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits. Blocking diodes. DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for
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LBAS40XLT1G
LBAS40LT1G
LBAS40LT3G
LBAS40-04LT1G
LBAS40-04LT3G
LBAS40-05LT1G
LBAS40-05LT3G
LBAS40-06LT1G
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Untitled
Abstract: No abstract text available
Text: STD7N80K5, STP7N80K5, STU7N80K5 N-channel 800 V, 0.95 Ω typ., 6 A Zener-protected SuperMESH 5 Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes 2 3 1 VDS RDS on max ID PTOT 800 V 1.2 Ω 6A 110 W STD7N80K5
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STD7N80K5,
STP7N80K5,
STU7N80K5
O-220
STD7N80K5
STP7N80K5
O-220
AM01476v1
DocID023448
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d25nf
Abstract: d25nf10l D25NF10LA d25nf10
Text: STD25NF10LA N-channel 100 V, 0.030 Ω, 25 A DPAK STripFET II Power MOSFET Features Order code VDSS RDS on max ID STD25NF10LA 100 V < 0.035 Ω 25 A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Logic level device TAB 3 1 DPAK Applications
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STD25NF10LA
d25nf
d25nf10l
D25NF10LA
d25nf10
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60n3l
Abstract: 60N3LH5 60N3 STD60N3LH5 STU60N3LH5 STP60N3LH5
Text: STD60N3LH5, STP60N3LH5 STU60N3LH5, STU60N3LH5-S N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, Short IPAK, TO-220 STripFET V Power MOSFET Features • ■ Order codes VDSS RDS on max ID STD60N3LH5 30 V 0.008 Ω 48 A STP60N3LH5 30 V 0.0084 Ω 48 A STU60N3LH5
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STD60N3LH5,
STP60N3LH5
STU60N3LH5,
STU60N3LH5-S
O-220
STU60N3LH5
STD60N3LH5
60n3l
60N3LH5
60N3
STD60N3LH5
STU60N3LH5
STP60N3LH5
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S5151 DIODE
Abstract: S5151 Diode S5151 S-5051A1 s5c diode S-5150A3 DIODE S51 5030a DIODE MARKING CODE B3
Text: Model S-5000 Dip Rotary Code Switch W/ Built In Resistors And/Or Diode Array 11 mm Square SPECIFICATIONS General Operating Tem p. Range -25°C TO + 7 5 °C Storage Tem p. Range -25°C TO + 7 5 °C Sealing M ethod 0 Ring Sealed Electrical Contact Rating N on-Sw itching
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OCR Scan
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S-5000
-5010A
S-5030A-
S5151 DIODE
S5151
Diode S5151
S-5051A1
s5c diode
S-5150A3
DIODE S51
5030a
DIODE MARKING CODE B3
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