DO-200AA
Abstract: S15C SD40 SD403C 403C SD-40
Text: Bulletin I2067 rev. C 04/00 SD403C.C SERIES Hockey Puk Version FAST RECOVERY DIODES Features High power FAST recovery diode series 430A 1.0 to 1.5 µs recovery time High voltage ratings up to 1600V High current capability Optimized turn on and turn off characteristics
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I2067
SD403C.
DO-200AA
DO-200AA
S15C
SD40
SD403C
403C
SD-40
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Untitled
Abstract: No abstract text available
Text: Bulletin I2067 rev. C 04/00 SD403C.C SERIES Hockey Puk Version FAST RECOVERY DIODES Features High power FAST recovery diode series 430A 1.0 to 1.5 µs recovery time High voltage ratings up to 1600V High current capability Optimized turn on and turn off characteristics
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I2067
SD403C.
DO-200AA
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: AO4840 40V Dual N-Channel MOSFET General Description Product Summary The AO4840 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. This dual device is suitable for use as a load switch or in PWM applications. ID (at VGS=10V)
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AO4840
AO4840
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ao4832
Abstract: No abstract text available
Text: AO4832 30V Dual N-Channel MOSFET General Description Product Summary The AO4832 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. ID (at VGS=10V)
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AO4832
AO4832
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SD40
Abstract: 403C DO-200AA S15C SD403C
Text: SD403C.C Series Vishay High Power Products Fast Recovery Diodes Hockey PUK Version , 430 A FEATURES • High power FAST recovery diode series • 1.0 to 1.5 µs recovery time RoHS COMPLIANT • High voltage ratings up to 1600 V • High current capability
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SD403C.
DO-200AA
18-Jul-08
SD40
403C
DO-200AA
S15C
SD403C
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Untitled
Abstract: No abstract text available
Text: SD403C.C Series Vishay High Power Products Fast Recovery Diodes Hockey PUK Version , 430 A FEATURES • High power FAST recovery diode series • 1.0 to 1.5 µs recovery time RoHS COMPLIANT • High voltage ratings up to 1600 V • High current capability
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SD403C.
DO-200AA
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SD403C.C Series Vishay High Power Products Fast Recovery Diodes Hockey PUK Version , 430 A FEATURES • High power FAST recovery diode series • 1.0 to 1.5 µs recovery time RoHS COMPLIANT • High voltage ratings up to 1600 V • High current capability
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SD403C.
DO-200AA
12-Mar-07
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403C
Abstract: DO-200AA S15C SD40 SD403C SD-40
Text: Bulletin I2067 rev. C 04/00 SD403C.C SERIES Hockey Puk Version FAST RECOVERY DIODES Features High power FAST recovery diode series 430A 1.0 to 1.5 µs recovery time High voltage ratings up to 1600V High current capability Optimized turn on and turn off characteristics
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Original
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I2067
SD403C.
DO-200AA
12-Mar-07
403C
DO-200AA
S15C
SD40
SD403C
SD-40
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Untitled
Abstract: No abstract text available
Text: SD403C.C Series Vishay High Power Products Fast Recovery Diodes Hockey PUK Version , 430 A FEATURES • High power FAST recovery diode series • 1.0 to 1.5 µs recovery time RoHS COMPLIANT • High voltage ratings up to 1600 V • High current capability
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SD403C.
DO-200AA
18-Jul-08
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AOD609
Abstract: aod609 datasheet
Text: AOD609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD609 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
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AOD609
AOD609
O-252-4L
aod609 datasheet
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Untitled
Abstract: No abstract text available
Text: AOD609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD609 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
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AOD609
AOD609
O-252-4L
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diode AR S1 77
Abstract: z645
Text: S T M8500A S amHop Microelectronics C orp. Arp,20 2005 ver1.1 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S R DS (ON) ( m W ) ID P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -55V -3A R DS (ON) ( m W )
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M8500A
diode AR S1 77
z645
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Untitled
Abstract: No abstract text available
Text: S T M8500A S amHop Microelectronics C orp. J an.23 2005 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S R DS (ON) ( m W ) ID P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -55V -3A R DS (ON) ( m W )
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M8500A
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Untitled
Abstract: No abstract text available
Text: SD403C.C Series Vishay Semiconductors Fast Recovery Diodes Hockey PUK Version , 430 A FEATURES • High power FAST recovery diode series • 1.0 to 1.5 µs recovery time • High voltage ratings up to 1600 V • High current capability • Optimized turn-on and turn-off characteristics
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SD403C.
DO-200AA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SD403C.C Series Vishay High Power Products Fast Recovery Diodes Hockey PUK Version , 430 A FEATURES • High power FAST recovery diode series • 1.0 to 1.5 µs recovery time RoHS COMPLIANT • High voltage ratings up to 1600 V • High current capability
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SD403C.
DO-200AA
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: S T M8500A S amHop Microelectronics C orp. J une,08 2006 ver1.2 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 55V 4.5A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -55V
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M8500A
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Untitled
Abstract: No abstract text available
Text: VS-SD403C.C Series www.vishay.com Vishay Semiconductors Fast Recovery Diodes Hockey PUK Version , 430 A FEATURES • • • • • • • • • • • DO-200AA PRODUCT SUMMARY High power FAST recovery diode series 1.0 µs to 1.5 µs recovery time High voltage ratings up to 1600 V
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VS-SD403C.
DO-200AA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: AOD609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD609 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
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AOD609
AOD609
O-252-4L
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AN7421
Abstract: AN-742 C1996 DS3875 DS3883A DS3884A DS3885 DS3886A diode AR S1 86 transistor ab2 12
Text: National Semiconductor Application Note 742 Chai Vaidya IPG Applications January 1991 INTRODUCTION Today’s digital systems with their higher clock speeds and data throughput must have higher transfer rates to keep the processors running at top speed With these types of circuits it is essential to have high performance bus transceivers which tie together everything on the bus Without specialized bus interface transceivers board designers must
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Diode SMD ED 9a
Abstract: IRF7504 diode AR s1 52 smd rectifier diode code S1 16 soic smd pcb footprint
Text: Previous Datasheet Index Next Data Sheet PRELIMINARY PD - 9.1267D IRF7504 HEXFET Power MOSFET Generation V Technology l Ultra Low On-Resistance l Dual P-Channel MOSFET l Very Small SOIC Package l Low Profile <1.1mm l Available in Tape & Reel l Fast Switching
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1267D
IRF7504
IA-481
Diode SMD ED 9a
IRF7504
diode AR s1 52
smd rectifier diode code S1
16 soic smd pcb footprint
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IN4*A 752 diode
Abstract: No abstract text available
Text: C o n d itio n s1> vV 4> AC, 1 min Operating / stor. tem perature —I o o ¡sol Q Sym bol —I SKiiP 642 GH 120 - 2*208 CTV Absolute Maximum Ratings SKiiPPACK Values Units 3000 V -25.+85 °C 1200 900 600 -40.+150 600 1200 4320 93 V V A °C A A A kAs2
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B7-10
IN4*A 752 diode
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Untitled
Abstract: No abstract text available
Text: H AR RI S SEMICOND HARRIS^ * ADVANCE INFORMATION SECTOR TS DE | 43Q2271 Q O llS ^a H S -3761R H Radiation Hardened Regulating Pulse Width Modulator Features Applications • • • • • Positive Switching Regulators Negative Switching Regulators Transformer Coupled DC to DC Converters
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43Q2271
-3761R
290KHz
11bDO
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Untitled
Abstract: No abstract text available
Text: 3875081 G E SOLID STATE 01E 1 9 7 92 Optoelectronic Specifications- 37E D HARRIS SENICOND SECTOR • 4302271 00272S4 HAS b T W //.7 3 1mm Aperture Photon Coupled Interrupter Module H 22A 4,H 22A 5,H 22A 6" T he G E Solid S tate H22A Interru p ter M odule is a gallium arse
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00272S4
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operation of sr latch using nor gates
Abstract: TIC 2060 D TIC 2060
Text: 37E D HARRIS SEfllCOND SECTOR • 4302271 ÜD2b3b4 Ö ■¡HAS - H lg h -R e lla b llity A S IC s PA60000 Series These data sheets are provided fo r technical guidance only. The final device perform ance may vary depending upon the
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PA60000
PA40000
operation of sr latch using nor gates
TIC 2060 D
TIC 2060
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