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    AO4832 Search Results

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    AO4832 Price and Stock

    Alpha & Omega Semiconductor AO4832

    MOSFET 2N-CH 30V 10A 8SOIC
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    DigiKey AO4832 Reel 3,000
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    • 10000 $0.20452
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    Quest Components AO4832 4,592
    • 1 $0.81
    • 10 $0.81
    • 100 $0.81
    • 1000 $0.324
    • 10000 $0.2835
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    TME AO4832 2,995 1
    • 1 $1.003
    • 10 $0.335
    • 100 $0.281
    • 1000 $0.264
    • 10000 $0.264
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    Chip 1 Exchange AO4832 1,608
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    Chip1Stop AO4832 1,237
    • 1 $1.97
    • 10 $1.97
    • 100 $0.515
    • 1000 $0.393
    • 10000 $0.393
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    AOS Thermal Compounds AO4832

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    Bristol Electronics AO4832 5,741
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    AO4832 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    AO4832 Alpha & Omega Semiconductor Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO4832 Alpha & Omega Semiconductor SMPS - 30V Dual N-Channel MOSFET Original PDF
    AO4832L Alpha & Omega Semiconductor Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF

    AO4832 Datasheets Context Search

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    AO4832

    Abstract: AO4832L AO8816
    Text: AO4832 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4832 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a


    Original     		PDF AO4832 AO4832 AO4832L AO8816

    ao4832

    Abstract: No abstract text available
    Text: AO4832 30V Dual N-Channel MOSFET General Description Product Summary The AO4832 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. ID (at VGS=10V)


    Original     		PDF AO4832 AO4832

    AO4832

    Abstract: No abstract text available
    Text: AO4832 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4832 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a


    Original     		PDF AO4832 AO4832L Paramete150

    Untitled

    Abstract: No abstract text available
    Text: AO4832 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4832 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a


    Original     		PDF AO4832 AO4832