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    DIODE 8645 Search Results

    DIODE 8645 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 8645 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN3611A SB05W05C Schottky Barrier Diode Twin Type • Cathode Common 50V, 500mA Rectifier Applications Package Dimensions · Universal-use rectifier. · High frequency rectification (switching regulators, converters, choppers). unit:mm 1169A


    Original     		PDF EN3611A SB05W05C 500mA SB05W05C]

    SB05W05C

    Abstract: No abstract text available
    Text: Ordering number:EN3611A SB05W05C Schottky Barrier Diode Twin Type • Cathode Common 50V, 500mA Rectifier Applications Package Dimensions · Universal-use rectifier. · High frequency rectification (switching regulators, converters, choppers). unit:mm 1169A


    Original     		PDF EN3611A SB05W05C 500mA SB05W05C] SB05W05C

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN3611B SB05W05C Schottky Barrier Diode http://onsemi.com 50V, 0.5A, Low IR, Monolithic Dual CP Common Cathode Applications • • Universal-use rectifier High frequency rectification switching regulators, converters, choppers Features


    Original     		PDF EN3611B SB05W05C

    36113

    Abstract: No abstract text available
    Text: SB05W05C Ordering number : EN3611B SANYO Semiconductors DATA SHEET SB05W05C Schottky Barrier Diode Twin Type • Cathode Common 50V, 500mA Rectifier Applications • • Universal-use rectifier High frequency rectification (switching regulators, converters, choppers)


    Original     		PDF EN3611B SB05W05C 500mA 36113

    Untitled

    Abstract: No abstract text available
    Text: SB05W05C Ordering number : EN3611B SANYO Semiconductors DATA SHEET SB05W05C Schottky Barrier Diode Twin Type • Cathode Common 50V, 500mA Rectifier Applications • • Universal-use rectifier High frequency rectification (switching regulators, converters, choppers)


    Original     		PDF SB05W05C EN3611B 500mA

    motor IG 2200 19 X 000 15 R

    Abstract: motor IG 2200 53 X 000 41 R ic c 838 IRG4BC20KD IRG4BC20KD-S AN-994 IRGBC20KD2-S IRGBC20MD2-S motor IG 2200 19 00001 227V
    Text: PD -91598A IRG4BC20KD-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V


    Original     		PDF -91598A IRG4BC20KD-S motor IG 2200 19 X 000 15 R motor IG 2200 53 X 000 41 R ic c 838 IRG4BC20KD IRG4BC20KD-S AN-994 IRGBC20KD2-S IRGBC20MD2-S motor IG 2200 19 00001 227V

    IRG4IBC20KD

    Abstract: No abstract text available
    Text: PD -91689A IRG4IBC20KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT C • High switching speed optimized for up to 25kHz with low VCE on • Short Circuit Rating 10µs @ 125°C, VGE = 15V


    Original     		PDF -91689A IRG4IBC20KD 25kHz O-220 IRG4IBC20KD

    AN-994

    Abstract: IRG4BC20KD-S IRGBC20KD2-S IRGBC20MD2-S
    Text: PD -91598A IRG4BC20KD-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V


    Original     		PDF -91598A IRG4BC20KD-S AN-994 IRG4BC20KD-S IRGBC20KD2-S IRGBC20MD2-S

    Untitled

    Abstract: No abstract text available
    Text: PD 91453B IRG4BC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF 91453B IRG4BC30UD O-220AB

    IRG4IBC30UD

    Abstract: PD917
    Text: PD91753A IRG4IBC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • 2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200


    Original     		PDF PD91753A IRG4IBC30UD O-220 IRG4IBC30UD PD917

    IRG4BC20FD

    Abstract: No abstract text available
    Text: PD 91601A IRG4BC20FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF 1601A IRG4BC20FD O-220AB optimiz52-7105 IRG4BC20FD

    IRG4IBC20KD

    Abstract: transistor VCE 1000V
    Text: PD -91689A IRG4IBC20KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT C • High switching speed optimized for up to 25kHz with low VCE on • Short Circuit Rating 10µs @ 125°C, VGE = 15V


    Original     		PDF -91689A IRG4IBC20KD 25kHz O-220 IGB2-7105 IRG4IBC20KD transistor VCE 1000V

    IRG4BC30UD

    Abstract: ir*c30ud
    Text: PD 91453B IRG4BC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF 91453B IRG4BC30UD O-220AB IRG4BC30UD ir*c30ud

    Untitled

    Abstract: No abstract text available
    Text: PD91753A IRG4IBC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • 2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200


    Original     		PDF PD91753A IRG4IBC30UD O-220

    Untitled

    Abstract: No abstract text available
    Text: PD -91750A IRG4IBC20FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • Very Low 1.66V votage drop 2.5kV, 60s insulation voltage U 4.8 mm creapage distance to heatsink Fast: Optimized for medium operating


    Original     		PDF -91750A IRG4IBC20FD O-220

    IRG4BC20UD

    Abstract: No abstract text available
    Text: PD 91449B IRG4BC20UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF 91449B IRG4BC20UD O-220AB opt52-7105 IRG4BC20UD

    Untitled

    Abstract: No abstract text available
    Text: PD -91783A IRG4BC20FD-S Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF -91783A IRG4BC20FD-S

    IRG4BC20FD

    Abstract: No abstract text available
    Text: PD 91601A IRG4BC20FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF 1601A IRG4BC20FD O-220AB optimiz20 IRG4BC20FD

    RU diode

    Abstract: IRG4BC30KD IRG4IBC30KD
    Text: PD -91690A IRG4IBC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT C • High switching speed optimized for up to 25kHz with low VCE on • Short Circuit Rating 10µs @ 125°C, VGE = 15V


    Original     		PDF -91690A IRG4IBC30KD 25kHz O-220 RU diode IRG4BC30KD IRG4IBC30KD

    IRG4PC40KD

    Abstract: irg4pc
    Text: PD -91584A IRG4PC40KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V


    Original     		PDF -91584A IRG4PC40KD O-247AC IRG4PC40KD irg4pc

    Untitled

    Abstract: No abstract text available
    Text: PD -91584A IRG4PC40KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V


    Original     		PDF -91584A IRG4PC40KD O-247AC

    Untitled

    Abstract: No abstract text available
    Text: PD 91573A IRG4PH50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter


    Original     		PDF 1573A IRG4PH50UD O-247AC

    AN-994

    Abstract: IRG4BC20FD-S
    Text: PD -91783A IRG4BC20FD-S Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF -91783A IRG4BC20FD-S optimize52-7105 AN-994 IRG4BC20FD-S

    SB05W05C

    Abstract: 361-12
    Text: Ordering number;EN3611A SB05W05C N0.3611A Schottky Barrier Diode Twin Type • Cathode Common SA%YO i 50V, 500mA Rectifier A pplications • Universal-use rectifier • High frequency rectification (switching regulators, converters, choppers) F e a tu re s


    OCR Scan     		PDF EN3611A SB05W05C 500mA SB05W05C 361-12