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    PD917 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PD917 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF

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    IRG4IBC30UD

    Abstract: PD917
    Text: PD91753A IRG4IBC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • 2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200


    Original     		PDF PD91753A IRG4IBC30UD O-220 IRG4IBC30UD PD917

    Untitled

    Abstract: No abstract text available
    Text: PD91753A IRG4IBC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • 2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200


    Original     		PDF PD91753A IRG4IBC30UD O-220

    IGBT IRG4IBC30UD

    Abstract: IRG4IBC30UD IGBT collector voltage 5kV ir*c30ud PD917
    Text: PD91753A IRG4IBC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • 2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200


    Original     		PDF PD91753A IRG4IBC30UD O-220 Absol20 IGBT IRG4IBC30UD IRG4IBC30UD IGBT collector voltage 5kV ir*c30ud PD917

    IRG4IBC30UD

    Abstract: No abstract text available
    Text: PD91753A IRG4IBC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • 2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200


    Original     		PDF PD91753A IRG4IBC30UD O-220 Absol52-7105 IRG4IBC30UD

    Untitled

    Abstract: No abstract text available
    Text: PD-91797 PRELIMINARY TM HEXFRED HFA40HF120C Ultrafast, Soft Recovery Diode Features VR = 1200V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Surface Mount VF = 4.46V Qrr = 370nC


    Original     		PDF PD-91797 HFA40HF120C 370nC

    Untitled

    Abstract: No abstract text available
    Text: PD-91796 PRELIMINARY TM HEXFRED HFA40HF60C Ultrafast, Soft Recovery Diode Features VR = 600V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Surface Mount VF = 1.56V Qrr = 270nC


    Original     		PDF PD-91796 HFA40HF60C 270nC

    MAX1636

    Abstract: IRF7805 IRF7807 MAX5480 schematic diagram 200v dc voltage regulator
    Text: PD-91748 IRNBPS1 TM Mobile Pentium II Power Supply Evaluation Board 90% Peak Efficiency Achieved The new IRNBPS1 evaluation board offers the power supply designer a convenient way to evaluate power MOSFET performance in DC/DC converters powering next-generation mobile processors. A synchronous


    Original     		PDF PD-91748 IRF7805 IRF7807 IRF7805 MAX1636 MAX5480 schematic diagram 200v dc voltage regulator

    MOSFET Device Effects on Phase Node Ringing

    Abstract: 300khz mosfet driver IC IRF7805
    Text: A Solution to Simplify 60A Multiphase Designs By John Lambert & Chris Bull, International Rectifier, USA As presented at PCIM 2001 Today’s servers and high-end desktop computer CPUs require peak currents of around 60A-80A and next generation processors will be in the order of 100A. Similarly, the transient response in today’s CPUs is in the


    Original     		PDF 0A-80A 00A/us. iP2001 IRF7805 PD-91746C, MOSFET Device Effects on Phase Node Ringing 300khz mosfet driver IC

    IRHM7250SE

    Abstract: No abstract text available
    Text: PD-91779 IRHM7250SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD W , (SEE) RAD HARD HEXFET 200Volt, 0.10W International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation


    Original     		PDF PD-91779 IRHM7250SE 200Volt, Rectifi10) IRHM7250SE

    300C

    Abstract: IRG4CH40SB IRG4PH40S
    Text: PD-91799A IRG4CH40SB IRG4CH40SB IGBT Die in Wafer Form C 1200 V Size 4 Standard Speed 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage


    Original     		PDF PD-91799A IRG4CH40SB IRG4CH40SB IRG4PH40S 300C IRG4PH40S

    Untitled

    Abstract: No abstract text available
    Text: PD-91781C IRHQ6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY SURFACE MOUNT LCC-28 Product Summary Part Number Radiation Level RDS(on) IRHQ6110 100K Rads (Si) 0.6Ω IRHQ63110 300K Rads (Si) 0.6Ω


    Original     		PDF PD-91781C IRHQ6110 LCC-28) IRHQ63110 LCC-28 MIL-STD-750, 80volt

    Untitled

    Abstract: No abstract text available
    Text: PD-91787I IRHNA57Z60 JANSR2N7467U2 30V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/683 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNA57Z60 100K Rads (Si) IRHNA53Z60 300K Rads (Si) RDS(on) ID 0.0035Ω 75A*


    Original     		PDF PD-91787I IRHNA57Z60 JANSR2N7467U2 MIL-PRF-19500/683 IRHNA57Z60 IRHNA53Z60 IRHNA54Z60 IRHNA58Z60 1000K

    IRHNA53Z60

    Abstract: IRHNA54Z60 IRHNA57Z60 JANSF2N7467U2 JANSG2N7467U2 JANSR2N7467U2
    Text: PD-91787I IRHNA57Z60 JANSR2N7467U2 30V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/683 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNA57Z60 100K Rads (Si) IRHNA53Z60 300K Rads (Si) RDS(on) ID 0.0035Ω 75A*


    Original     		PDF PD-91787I IRHNA57Z60 JANSR2N7467U2 MIL-PRF-19500/683 IRHNA57Z60 IRHNA53Z60 JANSF2N7467U2 IRHNA54Z60 JANSG2N7467U2 IRHNA54Z60 JANSF2N7467U2 JANSG2N7467U2 JANSR2N7467U2

    dc-dc driver schematic DIP ic

    Abstract: IRF7805
    Text: A Whole New Way to Design On-Board Single-Phase Synchronous Buck Converters for Hi-End Network Systems By Carl Smith, International Rectifier, El Segundo, CA As presented at Powersystems World 2001 Abstract Power levels and power density requirements continue to increase for many types of end


    Original     		PDF iP1001 21Vin, 925Vout IRF7805 PD91746C, dc-dc driver schematic DIP ic

    Untitled

    Abstract: No abstract text available
    Text: PD-91796A HFA40HF60C Ultrafast, Soft Recovery Diode FRED Features • • • • • VR = 600V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Surface Mount VF = 1.56V Qrr = 270nC di rec M/dt = 345A/µs Description


    Original     		PDF PD-91796A HFA40HF60C 270nC

    pcb 200W audio amplifier

    Abstract: IRHNB7264SE
    Text: PD-91738 IRHNB7264SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD W , (SEE) RAD HARD HEXFET 250Volt, 0.11W International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. No


    Original     		PDF PD-91738 IRHNB7264SE 250Volt, pcb 200W audio amplifier IRHNB7264SE

    Untitled

    Abstract: No abstract text available
    Text: PD-91781C IRHQ6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY SURFACE MOUNT LCC-28 Product Summary Part Number Radiation Level RDS(on) IRHQ6110 100K Rads (Si) 0.6Ω IRHQ63110 300K Rads (Si) 0.6Ω


    Original     		PDF PD-91781C IRHQ6110 LCC-28) IRHQ63110 80volt MlL-STD-750, -100V,

    HFA40HF120C

    Abstract: No abstract text available
    Text: PD-91797 PRELIMINARY TM HEXFRED HFA40HF120C Ultrafast, Soft Recovery Diode Features VR = 1200V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Surface Mount VF = 4.46V Qrr = 370nC


    Original     		PDF PD-91797 HFA40HF120C 370nC HFA40HF120C

    HFA40HF60C

    Abstract: No abstract text available
    Text: PD-91796 PRELIMINARY TM HEXFRED HFA40HF60C Ultrafast, Soft Recovery Diode Features VR = 600V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Surface Mount VF = 1.56V Qrr = 270nC


    Original     		PDF PD-91796 HFA40HF60C 270nC HFA40HF60C

    2 SK 0243

    Abstract: 300C IRG4CH40SB IRG4PH40S
    Text: PD-91799A IRG4CH40SB IRG4CH40SB IGBT Die in Wafer Form C 1200 V Size 4 Standard Speed 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage


    Original     		PDF PD-91799A IRG4CH40SB IRG4CH40SB IRG4PH40S 2 SK 0243 300C IRG4PH40S

    2 SK 0243

    Abstract: No abstract text available
    Text: PD-91799A International IQR Rectifier IRG4CH40SB IRG4CH40SB IGBT Die in Wafer Form 1200 V Size 4 Standard Speed 6" Wafer Electrical Characteristics Wafer Form Parameter Description Guaranteed (Min/Max) (on) C ollector-to-Em itter Saturation Voltage 4.5V Max.


    OCR Scan     		PDF IRG4CH40SB PD-91799A IRG4CH40SB IRG4PH40S 2 SK 0243

    Untitled

    Abstract: No abstract text available
    Text: International I R Rectifier PD-91797 PRELIMINARY HEXFRED1 Ultrafast, Soft Recovery Diode Features • • • • • HFA40HF120C V R = 1200V IS O LA T E D BASE Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic


    OCR Scan     		PDF PD-91797 HFA40HF120C 370nC 80A/ps

    Untitled

    Abstract: No abstract text available
    Text: International I R Rectifier PD-91796 PRELIMINARY HEXFRED HFA40HF60C Ultrafast, Soft Recovery Diode Features • • • • • V r = 600V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Surface Mount V F = 1.56V


    OCR Scan     		PDF PD-91796 HFA40HF60C 270nC

    Untitled

    Abstract: No abstract text available
    Text: International IO R Rectifier PD-91791 IRG4IBC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features c • D esig n ed expre ss ly for S w itc h -M o d e P o w er Su pp ly and P F C p o w er factor correction ? applications • 2 .5 k V , 6 0s insulation voltage


    OCR Scan     		PDF PD-91791 IRG4IBC30W