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    IRG4BC30KD Price and Stock

    Infineon Technologies AG IRG4BC30KDPBF

    IGBT 600V 28A 100W TO220AB
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    Infineon Technologies AG IRG4BC30KDSTRRP

    IGBT 600V 28A 100W D2PAK
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    Infineon Technologies AG IRG4BC30KDSTRLP

    IGBT 600V 28A 100W D2PAK
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    Bristol Electronics IRG4BC30KDSTRLP 155
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    Infineon Technologies AG IRG4BC30KD-STRR

    IGBT 600V 28A 100W D2PAK
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    Infineon Technologies AG IRG4BC30KD-SPBF

    IGBT 600V 28A 100W D2PAK
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    IRG4BC30KD Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRG4BC30KD International Rectifier Short Circuit Rated UltraFast IGBT Original PDF
    IRG4BC30KD International Rectifier 600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB package; A IRG4BC30KD with Standard Packaging Original PDF
    IRG4BC30KD International Rectifier Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode Original PDF
    IRG4BC30KDPbF International Rectifier TRANS IGBT CHIP N-CH 600V 28A 3TO-220AB Original PDF
    IRG4BC30KDPBF International Rectifier 600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB package; Similar to IRG4BC30KD with Lead Free Packaging Original PDF
    IRG4BC30KDS International Rectifier IGBT Original PDF
    IRG4BC30KD-S International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    IRG4BC30KD-S International Rectifier INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Original PDF
    IRG4BC30KD-S International Rectifier 600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak package; A IRG4BC30KD-S with Standard Packaging Original PDF
    IRG4BC30KD-SPBF International Rectifier 600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak package; Similar to IRG4BC30KD-S with Lead Free Packaging Original PDF
    IRG4BC30KD-SPBF International Rectifier Original PDF
    IRG4BC30KD-STRL International Rectifier 600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak package; A IRG4BC30KD-S with Tape and Reel Left Packaging Original PDF
    IRG4BC30KD-STRL International Rectifier Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode Original PDF
    IRG4BC30KDSTRLP International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 28A 100W D2PAK Original PDF
    IRG4BC30KDSTRLP-IR International Rectifier 600V, 28A, IGBT WITH ULTRAFAST S Original PDF
    IRG4BC30KD-STRR International Rectifier 600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak package; A IRG4BC30KD-S with Tape and Reel Right Packaging Original PDF
    IRG4BC30KD-STRR International Rectifier Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode Original PDF
    IRG4BC30KDSTRRP International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 28A 100W D2PAK Original PDF
    IRG4BC30KDSTRRP-IR International Rectifier SHORT CIRCUIT RATED ULTRAFAST IG Original PDF

    IRG4BC30KD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    motor IG 2200 19 X 000 15 R

    Abstract: AN-994 IRG4BC30KD-S IRGBC30KD2-S IRGBC30MD2-S
    Text: PD -91594C IRG4BC30KD-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF -91594C IRG4BC30KD-S motor IG 2200 19 X 000 15 R AN-994 IRG4BC30KD-S IRGBC30KD2-S IRGBC30MD2-S

    IRGBC30MD2

    Abstract: IRGBC30KD2 IRG4BC30KDPbF
    Text: PD -94910 IRG4BC30KDPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF IRG4BC30KDPbF O-220AB. O-220AB IRGBC30MD2 IRGBC30KD2 IRG4BC30KDPbF

    AN-994

    Abstract: IRGBC30KD2-S IRGBC30MD2-S
    Text: PD -95674 IRG4BC30KD-SPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching


    Original     		PDF IRG4BC30KD-SPbF EIA-418. AN-994 IRGBC30KD2-S IRGBC30MD2-S

    AN-994

    Abstract: IRGBC30KD2-S IRGBC30MD2-S
    Text: PD -95674A IRG4BC30KD-SPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching


    Original     		PDF -95674A IRG4BC30KD-SPbF Minimized57) EIA-418. AN-994 IRGBC30KD2-S IRGBC30MD2-S

    AN-994

    Abstract: IRG4BC30KD-S IRGBC30KD2-S IRGBC30MD2-S LT 236 diode
    Text: PD -91594B PRELIMINARY IRG4BC30KD-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V


    Original     		PDF -91594B IRG4BC30KD-S AN-994 IRG4BC30KD-S IRGBC30KD2-S IRGBC30MD2-S LT 236 diode

    motor IG 2200 19 x 000 15 r

    Abstract: AN-994 IRG4BC30KD-S IRGBC30KD2-S IRGBC30MD2-S
    Text: PD -91594C IRG4BC30KD-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF -91594C IRG4BC30KD-S recover2-7105 motor IG 2200 19 x 000 15 r AN-994 IRG4BC30KD-S IRGBC30KD2-S IRGBC30MD2-S

    irf 44 n

    Abstract: IRGBC30KD2 IRGBC30MD2
    Text: PD -94910A IRG4BC30KDPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF -94910A IRG4BC30KDPbF O-220AB irf 44 n IRGBC30KD2 IRGBC30MD2

    IRG4BC30KD

    Abstract: IRGBC30KD2 IRGBC30MD2
    Text: PD -91595A IRG4BC30KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF -91595A IRG4BC30KD IRG4BC30KD IRGBC30KD2 IRGBC30MD2

    IRG4BC30KD

    Abstract: IRGBC30KD2 IRGBC30MD2
    Text: PD -91595A IRG4BC30KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF -91595A IRG4BC30KD IRG4BC30KD IRGBC30KD2 IRGBC30MD2

    Untitled

    Abstract: No abstract text available
    Text: PD -94910A IRG4BC30KDPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , T J = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF -94910A IRG4BC30KDPbF O-220AB

    AN-994

    Abstract: IRGBC30KD2-S IRGBC30MD2-S
    Text: PD -95674 IRG4BC30KD-SPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching


    Original     		PDF IRG4BC30KD-SPbF EIA-418. AN-994 IRGBC30KD2-S IRGBC30MD2-S

    Untitled

    Abstract: No abstract text available
    Text: PD -91595A IRG4BC30KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF -91595A IRG4BC30KD

    Untitled

    Abstract: No abstract text available
    Text: PD -91594C IRG4BC30KD-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF -91594C IRG4BC30KD-S

    Untitled

    Abstract: No abstract text available
    Text: PD -95674A IRG4BC30KD-SPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching


    Original     		PDF -95674A IRG4BC30KD-SPbF IG957) EIA-418.

    TRANSISTOR tip 122

    Abstract: bgg 014 IRGBC30KD2 IRGBC30MD2
    Text: PD -94910 IRG4BC30KDPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF IRG4BC30KDPbF O-220AB. O-220AB TRANSISTOR tip 122 bgg 014 IRGBC30KD2 IRGBC30MD2

    irg4bc30kd

    Abstract: IRGBC30KD2 IRGBC30MD2
    Text: PD -9.1595 IRG4BC30KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , T J = 125°C, VGE = 15V


    Original     		PDF IRG4BC30KD irg4bc30kd IRGBC30KD2 IRGBC30MD2

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    IRG4BC30KD

    Abstract: IRG4IBC30KD
    Text: PD -9.1690 IRG4IBC30KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT C • High switching speed optimized for up to 25kHz with low VCE on • Short Circuit Rating 10µs @ 125°C, VGE = 15V


    Original     		PDF IRG4IBC30KD 25kHz O-220 IRG4BC30KD IRG4IBC30KD

    4410 SO-8

    Abstract: irf7389pbf IRF7343TRPBF IRG4PH30KPBF IRG4PC40FD IRFP4232PBF IRG4PC40UPBF IRG4PH50SPBF 247AA IRFR220NTRPBF
    Text: 1967-2012:QuarkCatalogTempNew 9/11/12 9:38 AM Page 1967 25 Power MOSFETs and IGBTs RoHS N Channel, 150 Volt VDSS VGS V ID (A) Power (W) RDS(on) (Ω) RTH (JC) (°C/W) Gate Drive Package EACH 70016952 70016954 70017481 70017261 70017492 70017500 70017262 70017029


    Original     		PDF IRF3315PBF IRF3415PBF IRF3415SPBF IRFB23N15DPBF IRFB41N15DPBF IRFB52N15DPBF IRFB61N15DPBF IRFL4315PBF IRFPS3815PBF IRFS52N15DPBF 4410 SO-8 irf7389pbf IRF7343TRPBF IRG4PH30KPBF IRG4PC40FD IRFP4232PBF IRG4PC40UPBF IRG4PH50SPBF 247AA IRFR220NTRPBF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    Untitled

    Abstract: No abstract text available
    Text: n International l R Rectifier p*himin/«y IRG4BC30KD-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10 ms, @360V V ce start , T j = 125°C,


    OCR Scan     		PDF IRG4BC30KD-S

    RG4BC30KD-S

    Abstract: RG4PH40 IRG4PH50KD RG4PH40KD
    Text: International Iö R Rectifier IGBTs VCES Colledor-to-Emitter Voltage V Port Number Max. V ci{on) Colledor-to-Emitter Voltage (V) •c Continuous Collector Current Tf =25°C TC=2S°C (A) (A) h Max. Power Dissipation (W) Fax on Demand Number Case Outline Key


    OCR Scan     		PDF IRG4BC20KD-S RG4BC30KD-S T0-220AB IRG4BC20KD IRG4BC30KD O-220 IRG4IBC20KD 1RG4IBC30KD O-247AC IRG4PC30KD RG4PH40 IRG4PH50KD RG4PH40KD