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    DIODE 718 Search Results

    DIODE 718 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 718 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BA679

    Abstract: No abstract text available
    Text: VISHAY BA679_Spice Vishay Semiconductors BA679 Spice Parameters * Technology: DISCRETE DIODE * Device: PIN Diode BA 679 * Type: Typical nom * Model established: 03-95, by B. Beckmann, TM1iC63-HN + IS = 718p RS = 1.37 N = 1.889 IBV= 100p + CJO=1.19p VJ = 240m M = 175m FC = 500m


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    PDF BA679 TM1iC63-HN 19-Nov-03 D-74025

    diode 718

    Abstract: LTO-DMS Semiconductor MDD310-18V 50hz to 60hz converter LTO-DMS Semiconductor Corporation MDD310-08V MDD310-12V MDD310-14V Lto-dms MDD310-20V
    Text: LTO-DMS Semiconductor Corporation 1468, 86th Street, Brooklyn, LTO-DMS New York, 11228, USA Tel: 718 234 6010 / (707) 3223 4679 Fax:(718) 234 6013 / (707) 3223 6696 MDD310-08V thru MDD310-22V Diode/Diode Module 3 2 VRSM V VRRM V 900 1300 1500 1700 1900 2100


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    PDF MDD310-08V MDD310-22V MDD310-08V MDD310-12V MDD310-14V MDD310-16V MDD310-18V MDD310-20V diode 718 LTO-DMS Semiconductor MDD310-18V 50hz to 60hz converter LTO-DMS Semiconductor Corporation MDD310-12V MDD310-14V Lto-dms MDD310-20V

    pin photodiode 10 ghz

    Abstract: lucent comcode Lucent receiver pin photodiode 20 ghz R2560A R2560A023 PIN photodiode ps pin Photodiode 2 GHz
    Text: Preliminary Data Sheet August 2000 R2560A High-Power 12 GHz Photodiode Description The R2560A incorporates a high-speed planar PIN diode to provide a highly reliable, high-power photodiode module. This module is well suited for receiver applications with optical preamplification. The diode


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    PDF R2560A DS00-279OPTO pin photodiode 10 ghz lucent comcode Lucent receiver pin photodiode 20 ghz R2560A023 PIN photodiode ps pin Photodiode 2 GHz

    ML44114N

    Abstract: 20P2N-A n type laser diode driver current buffer ic 30mA laserdiode and Application Note, Data S laserdiode application mitsubishi laserdiode
    Text: MITSUBISHI MITSUBISHI 〈DIGITAL 〈DIGITAL ASSP〉 ASSP〉 M66512P/FP M66512P/FP LASER-DIODE DRIVER LASER-DIODE DRIVER FEATURES • Two kinds of outputs for monitoring laser power built in. comparator output and analog output • Pin provided for forced OFF of current circuit.


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    PDF M66512P/FP 120mA M6657 300pF 10Mbit/s 50ns/div) 20Mbit/s 20ns/div) ML44114N 20P2N-A n type laser diode driver current buffer ic 30mA laserdiode and Application Note, Data S laserdiode application mitsubishi laserdiode

    agere photodiode

    Abstract: pin photodiode 10 ghz IR photodiode 865 nm R2560A R2560A023
    Text: Preliminary Data Sheet, Rev. 1 June 2001 R2560A High-Power 12 GHz Photodiode Description The R2560A incorporates a high-speed planar PIN diode to provide a highly reliable, high-power photodiode module. This module is well suited for receiver applications with optical preamplification. The diode


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    PDF R2560A DS00-279OPTO-1 DS00-279OPTO) agere photodiode pin photodiode 10 ghz IR photodiode 865 nm R2560A023

    GT21

    Abstract: No abstract text available
    Text: SUM60N08-07T New Product Vishay Siliconix N-Channel 75-V D-S MOSFET with Sensing Diode FEATURES D TrenchFETr Power MOSFET Plus Temperature Sensing Diode D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.007 @ VGS = 10 V


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    PDF SUM60N08-07T 08-Apr-05 GT21

    SUM60N08-07T

    Abstract: No abstract text available
    Text: SUM60N08-07T New Product Vishay Siliconix N-Channel 75-V D-S MOSFET with Sensing Diode FEATURES D TrenchFETr Power MOSFET Plus Temperature Sensing Diode D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.007 @ VGS = 10 V


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    PDF SUM60N08-07T 18-Jul-08 SUM60N08-07T

    S-2017

    Abstract: SUM60N08-07T D2T21
    Text: SUM60N08-07T New Product Vishay Siliconix N-Channel 75-V D-S MOSFET with Sensing Diode FEATURES D TrenchFETr Power MOSFET Plus Temperature Sensing Diode D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.007 @ VGS = 10 V


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    PDF SUM60N08-07T S-20174--Rev. 18-Mar-02 S-2017 SUM60N08-07T D2T21

    Untitled

    Abstract: No abstract text available
    Text: SUM60N08-07T New Product Vishay Siliconix N-Channel 75-V D-S MOSFET with Sensing Diode FEATURES D TrenchFETr Power MOSFET Plus Temperature Sensing Diode D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.007 @ VGS = 10 V


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    PDF SUM60N08-07T 08-Apr-05

    rold RCE

    Abstract: 4288A
    Text: MITSUBISHI DIGITAL ASSP M66512P/FP LASER-DIODE DRIVER DESCRIPTION The M66512 is a semiconductor laser-diode driver for driving a specific type' of semiconductor laser, in which the anode of a semiconductor laser diode is connected in stem structure to the cathode of a monitoring photodiode.


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    PDF M66512P/FP M66512 10Mbit/s 50ns/div) 20Mbit/s 20ns/div) 25Mbit/s 40Mbit/s rold RCE 4288A

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI DIGITAL ASSP M66512P/FP LASER-DIODE DRIVER DESCRIPTION The M66512 is a semiconductor laser-diode driver for driving a specific type* of semiconductor laser, in which the anode of a semiconductor laser diode is connected in stem structure to the cathode of a monitoring photodiode.


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    PDF M66512P/FP M66512 10Mbit/s 50ns/div) 20Mbit/s 20ns/div) 40Mbit/s 10ns/div)

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI DIGITAL ASSP M66512P/FP LASER-DIODE DRIVER DESCRIPTION The M66512 is a semiconductor laser-diode driver for driving a specific type* of semiconductor laser, in which the anode of a semiconductor laser diode is connected in stem structure to the cathode of a monitoring photodiode.


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    PDF M66512P/FP M66512 10Mbit/s 50ns/div) 25Mbit/s 20ns/div) 40Mbit/s 10ns/div) 20Mbit/s

    bc 7-25 pnp

    Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
    Text: DISCRETE SEMICONDUCTORS INDEX AND CROSS REFERENCE Industry Number Type Allegro Number s Allegro Package 1 Pinning 2 3 Ratings (Page) 1N914 Diode TMPD914 TO-236AB A NC K 7-29 1N4148 Diode TMPD4148 TO-236AB A NC K 7-29 1N4150 Diode TM PD4150 TO-236AB A NC K


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    PDF 1N914 1N4148 1N4150 1N4565 1N4565A 1N4566 1N4566A 1N4570 1N4570A 1N4571 bc 7-25 pnp transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor

    Thyristor Xo 602 MA

    Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
    Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and


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    PDF

    laser diode lg

    Abstract: transmitter tube 807 LG1625AXF TF1006A
    Text: Data Sheet June 1999 microelectronics group Lucent Technologies Bell Labs Innovations LG1625AXF Laser Driver Features Description • High data-rate laser diode/LED driver The LG1625AXF is a gallium-arsenide {GaAs laser diode driver to be used with direct modulated laser


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    PDF LG1625AXF DS99-187HSPL U7732 laser diode lg transmitter tube 807 TF1006A

    MT1115

    Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
    Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir


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    PDF 108th MT1115 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117

    Untitled

    Abstract: No abstract text available
    Text: gr oup Data Sheet February 1999 Lucent Technologies Bell Labs Innovations LG1627BXC Clocked Laser Driver Features Functional Description • High data-rate clocked laser diode driver The LG1627BXC is a gallium arsenide GaAs laser diode driver to be used with direct modulated laser


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    PDF LG1627BXC DS99-143HSPL

    ir10 diode

    Abstract: LM5142 lm568 diode IR10 1M5603 IN5139 MV140 diode 718
    Text: 1M-9/93 IDXDSD Series 1M1401 - 1M1412 1M6520 - 1M6525 1M5461A-1M5476A SURFACE MOUNT TUNING DIODES I electronics,. Many popular axial leaded glass packaged tuning diode types are now available in the MSI 1M Case for surface mount assemblies. The tuning diode chips, mounted on


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    PDF 1M-9/93 1M1401 1M1412 1M6520 1M6525 1M5461A-1M5476A or1M5143 1X5144 1M5145 1M5146 ir10 diode LM5142 lm568 diode IR10 1M5603 IN5139 MV140 diode 718

    ITT DIODE

    Abstract: diode ITT itt diodes ITT DIODE 125 intermetall BB723 DDG3163
    Text: ITT SEMICOND/ INTERMETALL blE D • Mbfi2711 DDG3163 07=5 WËISI BB723 Tuner Diode Silicon Epitaxial Planar Capacitance Diode with very wide effective capacitance variation for tuning the VHF range 170 to 303 MHz and the hyperband range 303 to 463 MHz without switching.


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    PDF 4bfi2711 DDG3163 BB723 4bfl2711 ITT DIODE diode ITT itt diodes ITT DIODE 125 intermetall BB723

    transistor

    Abstract: A 798 transistor high power npn UHF transistor Transistor Array differential amplifier TRANSISTOR d 718 gilbert cell differential pair 745 transistor NPN transistor transistor military differential pair transistor
    Text: LINEAR TRANSISTOR AND DIODE ARRAYS, AND DIFFERENTIAL AMPLIFIERS PAGE SELECTION G U ID E .


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    PDF CA3018, CA3018A CA3028A, CA3028B, CA3053 CA3039 CA3045, CA3046 CA3049, CA3102 transistor A 798 transistor high power npn UHF transistor Transistor Array differential amplifier TRANSISTOR d 718 gilbert cell differential pair 745 transistor NPN transistor transistor military differential pair transistor

    LM5142

    Abstract: 1MJ6 lm993 lm1408 LM1404 lm547 1M57 LM54 LM546 1N5139
    Text: lM-9/93 Series 1M1401 - 1M1412 1M6520 - 1M6525 1M5461A-1M5476A SURFACE MOUNT TUNING DIODES g æ i s d electronics. Many popular axial leaded glass packaged tuning diode types are now available in the MSI 1M Case for surface mount assemblies. The tuning diode chips, mounted on


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    PDF lM-9/93 1M1401 1M1412 1M6520 1M6525 1M5461A-1M5476A 1M5692A 1HS707A 1M5474A 1M5454A LM5142 1MJ6 lm993 lm1408 LM1404 lm547 1M57 LM54 LM546 1N5139

    diode ITT 15

    Abstract: ITT DIODE itt diodes BB623 BB723 ITT Intermetall
    Text: ITT SEMICOND/ INTERMETALL oDDsmb a n m i s i SDE D BB623, BB723 Tuner Diode Silicon Epitaxial Planar Capacitance Diode with very wide effective capacitance variation for tuning the VHF range 170 to 303 MHz and the hyperband range 303 to 463 MHz without switching.


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    PDF BB623, BB723 diode ITT 15 ITT DIODE itt diodes BB623 BB723 ITT Intermetall

    LM5451A

    Abstract: 1M5604 LM5600 lm545 LM560 diode 718
    Text: 1M-9/93 C Æ IS D Series 1M1401 - 1M1412 1M6520 - 1M6525 1M5461A-1M5476A SURFACE MOUNT TUNING DIODES electronics ne Many popular axial leaded glass packaged tuning diode types are now available in the MSI 1M Case for surface mount assemblies. The tuning diode chips, mounted on


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    PDF 1M-9/93 1M1401 1M1412 1M6520 1M6525 1M5461A-1M5476A IM5691A 1M5692A 1M5693A 1M5694A LM5451A 1M5604 LM5600 lm545 LM560 diode 718

    germanium

    Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
    Text: KOREA ELECTRONICS CO , LTD. KP—8111 PRODU CT GUIDE TRANSISTOR INTEGRATED CIRCUIT LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL CHARACTERISTICS Ta = 25°C hFE TYPE (V) (mA) (mW) Vce (sat) MAX VCE lC (V) (mA) KTC I815/KTN 5014


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    PDF I815/KTN 10I5/KTP 1923/KTN 380TM/KTN germanium kia 7208 KIA 7313 germanium transistor speaker protector