Untitled
Abstract: No abstract text available
Text: DSS6-0025BS preliminary Schottky Diode VRRM = 25 V I FAV = 6A VF = 0.3 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSS6-0025BS Marking on Product: 6Y025AS Backside: cathode 1 3 4 Features / Advantages: Applications:
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DSS6-0025BS
6Y025AS
O-252
60747and
20131031b
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6Y150AS
Abstract: 6Y150AS IXYS
Text: DSS6-015AS Schottky Diode VRRM = 150 V I FAV = 6A VF = 0.62 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSS6-015AS Marking on Product: 6Y150AS Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-252 DPak
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DSS6-015AS
6Y150AS
O-252
60747and
20131031b
6Y150AS
6Y150AS IXYS
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Untitled
Abstract: No abstract text available
Text: DSS6-0045AS Schottky Diode VRRM = 45 V I FAV = 6A VF = 0.5 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSS6-0045AS Marking on Product: 6Y045AS Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-252 DPak
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DSS6-0045AS
6Y045AS
O-252
60747and
20131031b
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C532 diode
Abstract: b16/41289
Text: Technische Information / technical information IGBT-Module IGBT-modules FP50R06W2E3_B11 EasyPIM 2B Modul PressFIT mit Trench/Feldstopp IGBT3 und Emitter Controlled3 Diode EasyPIM™2B module PressFIT with trench/fieldstop IGBT3 and Emitter Controlled3 Diode
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FP50R06W2E3
14BBFB'
A4F32
F223B
1231423567896A4BC3D6E23F
61F7DC
C532 diode
b16/41289
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diode zener ZD 260
Abstract: KDZ12VV KDZ36VV sy 360 diode DIODE MARKING 9Y KDZ11VV KDZ13VV KDZ20VV diode zener ZL 27 KDZ33VV
Text: SEMICONDUCTOR KDZ2.0VV~36VV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES Small Package : VSC C D Normal Voltage Tolerance about 1 2 Sharp Breakdown Characteristic.
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KDZ36VV
KDZ33VV
KDZ30VV
KDZ18VV
KDZ20VV
KDZ22VV
KDZ24VV
KDZ27VV
20x20mm
diode zener ZD 260
KDZ12VV
KDZ36VV
sy 360 diode
DIODE MARKING 9Y
KDZ11VV
KDZ13VV
KDZ20VV
diode zener ZL 27
KDZ33VV
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DIODE MARKING 9Y
Abstract: 9vv marking kdz16vv marking zn diode marking 4Y KDZ12VVY KDZ36VV diode zener ZD 260
Text: SEMICONDUCTOR KDZ2.0VV~36VV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES ・Small Package : VSC C D 1 2 ・Sharp Breakdown Characteristic. ・Normal Voltage Tolerance about ±6%.
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KDZ11VV
KDZ12VV
KDZ13VV
KDZ15VV
KDZ16VV
20x20mm
KDZ18VV
KDZ20VV
KDZ22VV
KDZ24VV
DIODE MARKING 9Y
9vv marking
kdz16vv
marking zn
diode marking 4Y
KDZ12VVY
KDZ36VV
diode zener ZD 260
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KDZ16VV
Abstract: diode zener ZD 150 diode zener ZD 260 diode zener ZD 36 marking zn diode marking zn DIODE MARKING 9Y
Text: SEMICONDUCTOR KDZ2.0VV~36VV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES ・Small Package : VSC C D 1 2 ・Sharp Breakdown Characteristic. ・Normal Voltage Tolerance about ±6%.
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KDZ11VV
KDZ12VV
KDZ13VV
KDZ15VV
KDZ16VV
20x20mm
KDZ18VV
KDZ20VV
KDZ22VV
KDZ24VV
KDZ16VV
diode zener ZD 150
diode zener ZD 260
diode zener ZD 36
marking zn
diode marking zn
DIODE MARKING 9Y
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ifs100b12n3e4_b31
Abstract: IFS100B12N3E4-B31 IFS100B12N3E4
Text: Technische Information / technical information IFS100B12N3E4_B31 IGBT-Module IGBT-modules MIPAQ base Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current
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IFS100B12N3E4
ifs100b12n3e4_b31
IFS100B12N3E4-B31
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IFS100B12N3E4
Abstract: C5363 IFS100B12N3E4B
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3E4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current
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IFS100B12N3E4
428654F4
BCFC24
E32DC
BCFC26
E32DC6
6734F
9C46E4
BC33694
1231423567896AB
C5363
IFS100B12N3E4B
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BT 69D
Abstract: FBC 320
Text: Technische Information / technical information IGBT-Module IGBT-modules FF200R12MT4 EconoDUAL 2 Modul mit schnellem Trench/Feldstop IGBT4 und Emitter Controlled4 Diode EconoDUAL™2 module with fast trench/fieldstop IGBT4 and Emitter Controlled4 diode Vorläufige Daten / preliminary data
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FF200R12MT4
CBB32
CBB326
223DB
2313BCBC
1231423567896A42BCD6ED3F
54B36
BT 69D
FBC 320
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LTC4098-3.6
Abstract: se666 k3332 edt0145.6 SEH-01T-P0.6
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B32 MIPAQ base Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and current sense
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IFS75B12N3E4
428654F4
BCFC24
E32DC
BCFC26
E32DC6
6734F
9C46E4
327C53
1231423567896AB
LTC4098-3.6
se666
k3332
edt0145.6
SEH-01T-P0.6
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ifs75b12n3e4_b32
Abstract: No abstract text available
Text: Technische Information / technical information IFS75B12N3E4_B32 IGBT-Module IGBT-modules MIPAQ base Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and current sense
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IFS75B12N3E4
ifs75b12n3e4_b32
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FF150R12MT4
Abstract: 9A1 diode U431
Text: Technische Information / technical information FF150R12MT4 IGBT-Module IGBT-modules EconoDUAL 2 Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC EconoDUAL™2 module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
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FF150R12MT4
FF150R12MT4
9A1 diode
U431
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules FZ600R12KE3_B1 62mm C-Serien Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode 62mm C-Series module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode #$%&6'6 #
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FZ600R12KE3
4266C33267C
C2682
322642C
36FC7
ABC66
1231423567896AB
4112CD3567896EF
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br - b2d
Abstract: br b2d
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM200GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
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BSM200GB120DLC
CBB32
CBB326
223DB
2313BCBC
3265C
C14BC
1231423567896A42BCD6ED3F
54B36
br - b2d
br b2d
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BSM200GB120DLC
Abstract: No abstract text available
Text: Technische Information / technical information BSM200GB120DLC IGBT-Module IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
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BSM200GB120DLC
BSM200GB120DLC
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k3532
Abstract: lm 3244
Text: Technische Information / technical information IGBT-Module IGBT-modules DDB6U75N16W1R Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values 32C5 36!"#$ 6%1&3 1322 14' *6+6,-.
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DDB6U75N16W1R
D36134
623D32
2C46523
612C6A
1231423567896AB
4112CD3567896EF
k3532
lm 3244
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TDB6HK180N16RR
Abstract: 6a65
Text: Technische Information / technical information IGBT-Module IGBT-modules TDB6HK180N16RR_B11 Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values !325CEF36"#E$% 6D13BC1322C14BBB& ' 6*6+,231336134$62332C364&3
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TDB6HK180N16RR
CEF36"
3BC1322C14BB
32C36
36423B
4256E
D6345
6423B
36423B
6a65
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Untitled
Abstract: No abstract text available
Text: 20mm BIG LAMP DLC/6YD YELLOW Features Description ! 12 The Yellow source color devices are made with Gallium PINS. ! HIGH LUMINOUS INTENSITY. Arsenide Phosphide on Gallium Phosphide Yellow Light ! LOW POWER CONSUMPTION. Emitting Diode. ! WIDE VIEWING ANGLE.
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DSAA7774
MAR/04/2003
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Untitled
Abstract: No abstract text available
Text: 20mm BIG LAMP DLA/6YD YELLOW Features Description ! 12 The Yellow source color devices are made with Gallium PINS. ! HIGH LUMINOUS INTENSITY. Arsenide Phosphide on Gallium Phosphide Yellow Light ! LOW POWER CONSUMPTION. Emitting Diode. ! WIDE VIEWING ANGLE.
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DSAA8161
MAR/04/2003
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13.8 8w zener diode
Abstract: "MARKING CODE" 3Y zener marking sot323 code SEMICONDUCTOR 12w marking code sot 23 6Y marking code marking code z2
Text: Central" CMSZDA2V4 THRU CMSZDA47V Semiconductor Corp. SURFACE MOUNT DUAL SILICON ZENER DIODE 2.4 VOLTS THRU 47 VOLTS 250mW DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSZDA2V4 Series silicon dual zener diode is a highly quality voltage regulator, connected in a
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CMSZDA47V
250mW
OT-323
T-323
20-February
13.8 8w zener diode
"MARKING CODE" 3Y
zener marking sot323
code SEMICONDUCTOR
12w marking code sot 23
6Y marking code
marking code z2
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diode zener ZD 36
Abstract: zener diode, zl 33 DIODE MARKING 9Y zener diode zg 36 diode marking 4Y diode zener ZL 30 diode zener ZD 15 diode zener ZL 15 zener diode BZ 22 zener diode, zl 22
Text: KDZ2.0W-36W SEM ICONDUCTOR ZENER DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA r CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES • Small Package : VSC • Sharp Breakdown Characteristic. • Normal Voltage Tolerance about ±6% .
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W-36W
20x20m
diode zener ZD 36
zener diode, zl 33
DIODE MARKING 9Y
zener diode zg 36
diode marking 4Y
diode zener ZL 30
diode zener ZD 15
diode zener ZL 15
zener diode BZ 22
zener diode, zl 22
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Single Diode M1FH3 30V 1.5A Feature • Small SMD • Super-Low Vf=0.36V • * * S f i V F = 0 .3 6 V Main Use • Reverse connect protection for DC power source • DC/DC Converter • Mobile phone, PC • K y ÿ !L -iîÊ fê B 5 ±
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5011ziEÂ
li501
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Single Diode M2FH3 U n it ‘ m m Package : M2F Weight 0.072« T y p 30V 6A Feature • /JvguSMD •«« V f=0.36V • Small SMD • Super-Low Vf=0.36V • I { "J t U — iiJ S K ih • Reverse connect protection for DC power source
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