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    DIODE 6A2 Search Results

    DIODE 6A2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 6A2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    diode c24 06 6D

    Abstract: LTC4098-3.6
    Text: Technische Information / technical information FF450R12IE4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC


    Original     		FF450R12IE4 326A11 89F6F8 36F1322 B2CC36 DC336E 1231423567896AB 4112CD3567896EF diode c24 06 6D LTC4098-3.6 PDF

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information FF600R12IE4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC


    Original     		FF600R12IE4 326A11 89F6F8 36F1322 B2CC36 DC336E 1231423567896AB 4112CD3567896EF PDF

    LTC4098-3.6

    Abstract: A20-LCD15.6 SXA-01GW-P0.6
    Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B39 MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current


    Original     		IFS75B12N3E4 428654F4 D3265 ECFC24 B32DC CD3289 ECFC26 B32DC6 C36B3 1231423567896AB LTC4098-3.6 A20-LCD15.6 SXA-01GW-P0.6 PDF

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules FS200R06KE3 EconoPACK 3 mit schnellem Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™3 with fast trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter


    Original     		FS200R06KE3 CEE32 1322D14 CEE326 632CF5CD 1CE73 2313ECEC 3265CDDC14ECF 1231423567896AB2CDEF1B6 54E36F PDF

    6A243

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules FS150R06KE3 EconoPACK 3 mit schnellem Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™3 with fast trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter


    Original     		FS150R06KE3 CEE32 1322D14 CEE326 632CF5CD 1CE73 2313ECEC 3265CDDC14ECF 1231423567896AB2CDEF1B6 54E36F 6A243 PDF

    6A10 DIODE

    Abstract: 6A4 DIODE diode rl207 diode P600A diode RL205 p600m DIODE diode 6a6 diode 6a4 p600b diode DIODE 6A10
    Text: Axial Diode Series DIODE RECTIFIERS GENERAL PURPOSE Maximum Peak TYPE Reverse Maximum Average Rectified Maximum Maximum Forward Peak Reverse Current at Half-wave Resistive Surge Current Current at load 50HZ Voltage 50HZ PRV and Maximum Forward Voltage at TA=25°C


    Original     		1N4001 DO-41 1N4002 1N4003 1N4004 1N4005 DO-15 6A10 DIODE 6A4 DIODE diode rl207 diode P600A diode RL205 p600m DIODE diode 6a6 diode 6a4 p600b diode DIODE 6A10 PDF

    zener 6c2

    Abstract: sot-23 Marking 8C2 6c2 diode 5B1 zener diode sot-23 Diode SOT-23 marking 27C 5c1 zener diode SOT23 MARKING 5b1 27BSB 5B1 IR BZX84C
    Text: BZX84C-BS SERIES 4.7V to 36V SILICON PLANAR VOLTAGE REGULATOR DIODE FEATURES * Zener Voltage Range 4.7 to 36 Volts * SOT-23 Package * Low Voltage General Purpose Voltage Regulator Diode SOT-23 MECHANICAL DATA * * * * * .052 1.325 Case: Molded plastic Epoxy: UL 94V-O rate flame retardant


    Original     		BZX84C-BS OT-23 OT-23 MIL-STD-202E zener 6c2 sot-23 Marking 8C2 6c2 diode 5B1 zener diode sot-23 Diode SOT-23 marking 27C 5c1 zener diode SOT23 MARKING 5b1 27BSB 5B1 IR BZX84C PDF

    SMD MARKING CODE 5a6

    Abstract: SMD 5A6 SOT-23 6A8 SMD ir 5a6 diode Zener diode smd marking code 12A 5A6 smd sot23 PK SMD mARKING marking 6a2 smd
    Text: Formosa MS MMBZ5V6A THRU MMBZ33VA SMD Zener Diode TVS List List. 1 Package outline. 2


    Original     		MMBZ33VA 125oC MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 METHOD-1038 SMD MARKING CODE 5a6 SMD 5A6 SOT-23 6A8 SMD ir 5a6 diode Zener diode smd marking code 12A 5A6 smd sot23 PK SMD mARKING marking 6a2 smd PDF

    5a6 zener diode

    Abstract: SMD MARKING CODE 5a6 5a6 dual zener diode Bidirectional Zener Diode Glass 15v 6A8 SMD 6A8 DIODE SMD zener 5A6 ON ir 5a6 diode 5A6 smd sot23 5A6 t smd
    Text: Formosa MS MMBZ5V6A THRU MMBZ33VA SMD Zener Diode TVS List List. 1 Package outline. 2


    Original     		MMBZ33VA MIL-STD-750D METHOD-1051 125oC METHOD-1056 METHOD-4066-2 1000hrs. 5a6 zener diode SMD MARKING CODE 5a6 5a6 dual zener diode Bidirectional Zener Diode Glass 15v 6A8 SMD 6A8 DIODE SMD zener 5A6 ON ir 5a6 diode 5A6 smd sot23 5A6 t smd PDF

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules FP50R06W2E3 EasyPIM Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTC EasyPIM™ module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC C2 *36A436+61234286544


    Original     		FP50R06W2E3 C26A2 961AF86 -BCD66 -BCD66: 1231423567896AB 4112CD3567896EF PDF

    kp50a

    Abstract: kp20a ZP200A KP300A KP200A ZP300A kp5a ZP20A zp5a KP100a
    Text: Ü t t S M M W M I# Stud Version Semiconductor STANDARD RECOVERY DIODE Stud Version FAST RECOVERY DIODE (Stud Version) M ' °r & É (« IÊ 3 £ ) PHASE CONTROL THYRISTOR (Stud Version) TRIAC THYRISTOR (Stud Version) t i& R T & ä H K K A ) FAST THYRISTOR (Stud Version)


    OCR Scan     		ZLKP100A ZLKP150A ZLKP200A ZLKP250A ZLKP300A kp50a kp20a ZP200A KP300A KP200A ZP300A kp5a ZP20A zp5a KP100a PDF

    6A20n

    Abstract: MOST25
    Text: I 6A20n m o jx DIODE OBIUHE CBEÆEHHH GENERAL /JeMncJiepHbiH ahoa 6^2011 npeflHa3HaneH ajih paÔOTbl B ÔJIOKaX CTpOHHOH pa3BepTKH TejieBH3HOHHbIX npHeMHHKOb c ymoM otkjiohchhsi jiyna KHHecxona AO 110°C. K aToa — oKCHüHkiH icocBeHHoro HaKajia. M acca He 6ojiee 25 r.


    OCR Scan     		6A20n MOST25 PDF

    Untitled

    Abstract: No abstract text available
    Text: LDZ70/6A2 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage6.2 @I(Z) (A) (Test Condition)20m Tolerance (%)5 P(D) Max. (W)360m Z(z) Max. (ê) Dyn. Imped.7.0 Temp Coef pp/10k Maximum Operating Temp (øC)150õ


    Original     		LDZ70/6A2 pp/10k StyleTO-122 PDF

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45 PDF

    marking A4t sot23

    Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE


    Original     		1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Philips Semiconductors PHILIPS Philips Semiconductors Preliminary specification Voltage regulator double diodes PZM-NA series FEATURES PINNING • Total power dissipation: max. 220 mW per diode PIN DESCRIPTION • Small plastic package suitable for surface mounted


    OCR Scan     		OT346 OT346; SCA61 PDF

    4A3 enter diode

    Abstract: diode a62 zm 1021
    Text: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification Voltage regulator double diodes PZM-NA series FEATURES PINNING • Total power dissipation: max. 220 mW per diode PIN DESCRIPTION • Small plastic package suitable for surface mounted


    OCR Scan     		OT346 OT346; 4A3 enter diode diode a62 zm 1021 PDF

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


    Original     		1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE PDF

    marking A4t sot23

    Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


    Original     		1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23 PDF

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50 PDF

    5a1 DIODE

    Abstract: 8A2 DIODE QS316209 QS3162209
    Text: QS316209, QS3162209 QuickSwitch Products High-Speed CMOS 18-Bit Bus-Exchange Switch Q QUALITY SEMICONDUCTOR, INC. QS316209 QS3162209 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs


    Original     		QS316209, QS3162209 18-Bit QS316209 48-pin QS316209 QS3162209. 5a1 DIODE 8A2 DIODE QS3162209 PDF

    1Bn-12Bn

    Abstract: diagram of diode 1a2 10A1 10A2 11A1 11A2 12A1 QS316212
    Text: QS316212, QS3162212 QuickSwitch Products High-Speed CMOS 24-Bit Bus-Exchange Switch Q QUALITY SEMICONDUCTOR, INC. QS316212 QS3162212 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs


    Original     		QS316212, QS3162212 24-Bit QS316212 56-pin QS3162212 QS316212 1Bn-12Bn diagram of diode 1a2 10A1 10A2 11A1 11A2 12A1 PDF

    Untitled

    Abstract: No abstract text available
    Text: IDTQS3VH16212 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH IDTQS3VH16212 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc


    Original     		IDTQS3VH16212 24-BIT 3VH16212 PDF

    Untitled

    Abstract: No abstract text available
    Text: IDTQS3VH16212 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS3VH16212 DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc


    Original     		IDTQS3VH16212 24-BIT 3VH16212 PDF