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    DIODE 62A Search Results

    DIODE 62A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 62A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C-150

    Abstract: IRF1010 IRF530S IRGB15B60KD IRGS15B60KD IRGSL15B60KD IRL3103L
    Text: PD - 94383C IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    PDF 94383C IRGB15B60KD IRGS15B60KD IRGSL15B60KD O-220AB O-220AB AN-994. O-220 C-150 IRF1010 IRF530S IRGB15B60KD IRGS15B60KD IRGSL15B60KD IRL3103L

    IRGS15B60KD

    Abstract: IRGSL15B60KD AN-994 C-150 IRGB15B60KD
    Text: PD - 94383D IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    PDF 94383D IRGB15B60KD IRGS15B60KD IRGSL15B60KD O-220AB AN-994. O-220 IRGS15B60KD IRGSL15B60KD AN-994 C-150 IRGB15B60KD

    AN-994

    Abstract: C-150 IRGS15B60KD IRGSL15B60KD IRGB15B60KDPBF
    Text: PD - 95194 IRGB15B60KDPbF IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    PDF IRGB15B60KDPbF IRGS15B60KD IRGSL15B60KD O-220 O-220AB O-262 IRGB15B60KDPbF IRGS15B60KD AN-994. AN-994 C-150 IRGSL15B60KD

    Untitled

    Abstract: No abstract text available
    Text: PD - 94383 IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    PDF IRGS15B60KD IRGSL15B60KD O-262

    C-150

    Abstract: IRF1010 IRF530S IRGB15B60KD IRGS15B60KD IRGSL15B60KD IRL3103L
    Text: PD - 94383B IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    PDF 94383B IRGB15B60KD IRGS15B60KD IRGSL15B60KD O-220AB O-220AB AN-994. O-220 C-150 IRF1010 IRF530S IRGB15B60KD IRGS15B60KD IRGSL15B60KD IRL3103L

    Untitled

    Abstract: No abstract text available
    Text: PD - 94383D IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    PDF 94383D IRGB15B60KD IRGS15B60KD IRGSL15B60KD O-220AB AN-994. O-220

    IRGB15B60K

    Abstract: AN-994 C-150 IRGB15B60KD IRGS15B60KD IRGSL15B60KD 94383D
    Text: PD - 94383D IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original
    PDF 94383D IRGB15B60KD IRGS15B60KD IRGSL15B60KD O-220AB AN-994. O-220 IRGB15B60K AN-994 C-150 IRGB15B60KD IRGS15B60KD IRGSL15B60KD 94383D

    Untitled

    Abstract: No abstract text available
    Text: PD - 95194A IRGB15B60KDPbF IRGS15B60KDPbF IRGSL15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.


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    PDF 5194A IRGB15B60KDPbF IRGS15B60KDPbF IRGSL15B60KDPbF O-220AB O-262 AN-994.

    AN-994

    Abstract: C-150 IRGS15B60K
    Text: PD - 95194A IRGB15B60KDPbF IRGS15B60KDPbF IRGSL15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.


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    PDF 5194A IRGB15B60KDPbF IRGS15B60KDPbF IRGSL15B60KDPbF O-220AB AN-994. O-220 AN-994 C-150 IRGS15B60K

    AN-994

    Abstract: C-150
    Text: PD - 95194A IRGB15B60KDPbF IRGS15B60KDPbF IRGSL15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.


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    PDF 5194A IRGB15B60KDPbF IRGS15B60KDPbF IRGSL15B60KDPbF O-220AB AN-994. O-220 AN-994 C-150

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules DDB6U75N16YR Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values !32C5C36"#$ 6%1C3B132214BBFB &' 6 6*+


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    PDF DDB6U75N16YR 14BBFB 06123B F223B 6043C0F0613265C 3269F 6123B 043C0F06 06123B

    PK P6KE 200A

    Abstract: SLD30-018 436 6V8A 1.5KA36CA N10H kt 201-500 P6KA36CA P6KA 335 Diode N10Z P6KA18CA
    Text: PRODUCT CATALOG & DESIGN GUIDE DIODE Transient Voltage Suppression TVS Diode Products Littelfuse Circuit Prot Solutions Portf Consumer Electronics Telecom White Goods Medical Equipment TVSS and Power S DESIGN SUPPORT Live Application Design and Technical Support—Tap into our expertise. Littelfuse engineers are available around the world to help you address design challenges and develop


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    PDF EC111 EC2111v1E0804 PK P6KE 200A SLD30-018 436 6V8A 1.5KA36CA N10H kt 201-500 P6KA36CA P6KA 335 Diode N10Z P6KA18CA

    IXYN100N120C3H1

    Abstract: No abstract text available
    Text: Advance Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode IXYN100N120C3H1 High-Speed IGBT for 20-50 kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 1200V 62A 3.5V 110ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR


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    PDF IXYN100N120C3H1 IC110 110ns OT-227B, E153432 IF110 100N120C3 IXYN100N120C3H1

    IXTN62N50L

    Abstract: No abstract text available
    Text: LinearTM Power MOSFET w/Extended FBSOA VDSS ID25 IXTN62N50L RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 62A ≤ 100mΩ Ω miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR


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    PDF IXTN62N50L E153432 62N50L 11-04-11-B IXTN62N50L

    Untitled

    Abstract: No abstract text available
    Text: LinearTM Power MOSFET w/Extended FBSOA VDSS ID25 IXTB62N50L RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 62A ≤ 100mΩ Ω PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


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    PDF IXTB62N50L PLUS264TM 62N50L 11-04-11-B

    IXTB62N50L

    Abstract: No abstract text available
    Text: LinearTM Power MOSFET w/Extended FBSOA IXTB62N50L VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 62A ≤ 100mΩ Ω PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


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    PDF IXTB62N50L PLUS264TM 62N50L 11-04-11-B IXTB62N50L

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXYN100N120C3H1 1200V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 1200V 62A 3.5V 110ns E Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


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    PDF IXYN100N120C3H1 IC110 110ns OT-227B, E153432 IF110

    iXYN100N120C3H1

    Abstract: ixyn100n120c3
    Text: Advance Technical Information IXYN100N120C3H1 1200V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 1200V 62A 3.5V 110ns E Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


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    PDF IXYN100N120C3H1 IC110 110ns IF110 OT-227B, E153432 100N120C3 iXYN100N120C3H1 ixyn100n120c3

    75337S

    Abstract: HUF75337G3 75337P HUF75337P3 HUF75337S3 HUF75337S3S HUF75337S3ST TB334
    Text: HUF75337G3, HUF75337P3, HUF75337S3, HUF75337S3S S E M I C O N D U C T O R 62A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs January 1998 Features Description • 62A, 55V • Ultra Low On-Resistance, rDS ON = 0.014Ω • Diode Exhibits Both High Speed and Soft Recovery


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    PDF HUF75337G3, HUF75337P3, HUF75337S3, HUF75337S3S TB334, 1-800-4-HARRIS 75337S HUF75337G3 75337P HUF75337P3 HUF75337S3 HUF75337S3S HUF75337S3ST TB334

    IGBT gate driver welding

    Abstract: IRGP4063D
    Text: IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 62A, TC =100°C G G tSC 5µs, TJ max = 175°C G VCE(ON) typ. = 1.65V @ IC = 48A E E n-channel Applica ons • Industrial Motor Drive


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    PDF IRGP4063D1PbF IRGP4063D1-EPbF IRGP4063D1PbF IRGP4063D1EPbF IRGP4063D1-EPbF IRGP4063D1PbF/IRGP4063D1-EPbF O-247AC O-247AD JESD47F) IGBT gate driver welding IRGP4063D

    irgp4063d1

    Abstract: IRGP4063D IRGP4063
    Text: IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 62A, TC =100°C G G tSC 5µs, TJ max = 175°C G VCE(ON) typ. = 1.65V @ IC = 48A E E n-channel Applica ons • Industrial Motor Drive


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    PDF IRGP4063D1PbF IRGP4063D1-EPbF IRGP4063D1PbF IRGP4063D1EPbF IRGP4063D1-EPbF IRGP4063D1PbF/IRGP4063D1-EPbF O-247AC O-247AD JESD47F) irgp4063d1 IRGP4063D IRGP4063

    Untitled

    Abstract: No abstract text available
    Text: Transient Voltage Suppression Diodes Surface Mount – 600W > TPSMB series TPSMB Series Uni-directional TVS Diode Arrays SPA Description Family of Products The TPSMB series is designed specifically to protect sensitive electronic equipment from voltage transients


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    PDF AEC-Q101 JESD201A EC-61000-4-2 DO-214AA 12mm/13â RS-481

    GDE 13a DIODE

    Abstract: diode marking GDE 38 diode 009 6V8A marking diode 47C sot23 NEC D 882 p GEX 36A DIODE Diode Gfg 6f MOTOROLA 727 36A Diode GFP 56A GFM 16A
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SOTĆ23 Dual Monolithic Common Anode Zener MMBZ5V6ALT1 ADDITIONAL VOLTAGES AVAILABLE Transient Voltage Suppressor For ESD Protection Motorola Preferred Device This dual monolithic silicon zener diode is designed for applications requiring transient


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    PDF OT-23 GDE 13a DIODE diode marking GDE 38 diode 009 6V8A marking diode 47C sot23 NEC D 882 p GEX 36A DIODE Diode Gfg 6f MOTOROLA 727 36A Diode GFP 56A GFM 16A

    huf75337g3

    Abstract: 75337S
    Text: HUF75337G3, HUF75337P3, HUF75337S3, HUF75337S3S HARRIS S E M I C O N D U C T O R 62A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs January 1998 Features ^ • 62A, 55V M These N-Channel power MOS­ • Ultra Low On-Resistance, ros ON = • Diode Exhibits Both High Speed and Soft Recovery


    OCR Scan
    PDF HUF75337G3, HUF75337P3, HUF75337S3, HUF75337S3S TB334, 1-800-4-HARRIS huf75337g3 75337S