Ultrasonic welding circuit
Abstract: DIODE 4005 hpnd pin 0.01 pF handling of beam lead diodes beam lead PIN diode Ablestik diode led ir Led-Diode data phase shift resistance welding HPND4005
Text: HPND- 4005 Beam Lead PIN Diode Data Sheet Description Features The HPND-4005 planar beam lead PIN diode is constructed to offer exceptional lead strength while achieving excellent electrical performance at high frequencies. High beam strength offers users superior
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HPND-4005
5965-8877E
AV01-0593EN
Ultrasonic welding circuit
DIODE 4005
hpnd pin 0.01 pF
handling of beam lead diodes
beam lead PIN diode
Ablestik
diode led ir
Led-Diode data
phase shift resistance welding
HPND4005
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MG1007-42
Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are
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MS4-009-13
MG1007-42
MG1020-M16
MSC1075M
1004mp
MG1052-30
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5BJC4100
Abstract: F5BHC 5BBC3820
Text: General Purpose, Pulse and DC Transient Suppression F5B Series Metallized Polyester Film with Integrated Suppression Diode, 18 – 63 VDC Overview Applications The F5B Series is a metallized polyester film capacitor with an integrated suppression diode encapsulated in a thermosetting
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808nm 500mw
Abstract: ADL-80V01NL 808nm 500mw laser diode 80V01 C 828
Text: AlGaAs Infrared Laser Diode ADL-80V01NL DATE：2006/03/02 Ver 2.0 ★808nm 500mW 9φ TO-Type High Power Laser Diode • Features 1. Low operation current 2. Cost effective • Applications 1. Pumps for solid state lasers 2. Medical use • Absolute maximum ratings
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ADL-80V01NL
DATE2006/03/02
808nm
500mW
divers-vis/ari/808nm/
adl-80v01nl
808nm 500mw
808nm 500mw laser diode
80V01
C 828
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85713
Abstract: 85713 B SF4004 SF4007
Text: VISHAY SF400X_PSpice Vishay Semiconductors SF400X Spice Parameters SF 4001 .SF4004 SF 4005 .SF4007 * Technology: DISCRETE DEVICE * Device: Rectifier Diode SF4004 * Description: * Type: Typical nom * Subcircuit: 16.12.1996, by S.Reuter, TM1iC63-HN * Remarks:
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SF400X
SF4004
SF4007
TM1iC63-HN
SF4004
85713
85713 B
SF4007
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VSO05561
Abstract: No abstract text available
Text: BAS 40W. Silicon Schottky Diode 3 • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing 2 1 BAS 40-04W BAS 40-05W BAS 40-06W 3 3 3 1 2 1 2 EHA07005 1 VSO05561 2 EHA07006 EHA07004
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0-04W
0-05W
0-06W
VSO05561
EHA07005
EHA07006
EHA07004
OT-323
VSO05561
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PK P6KE 200A
Abstract: SLD30-018 436 6V8A 1.5KA36CA N10H kt 201-500 P6KA36CA P6KA 335 Diode N10Z P6KA18CA
Text: PRODUCT CATALOG & DESIGN GUIDE DIODE Transient Voltage Suppression TVS Diode Products Littelfuse Circuit Prot Solutions Portf Consumer Electronics Telecom White Goods Medical Equipment TVSS and Power S DESIGN SUPPORT Live Application Design and Technical Support—Tap into our expertise. Littelfuse engineers are available around the world to help you address design challenges and develop
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EC111
EC2111v1E0804
PK P6KE 200A
SLD30-018
436 6V8A
1.5KA36CA
N10H
kt 201-500
P6KA36CA
P6KA 335
Diode N10Z
P6KA18CA
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hpnd pin 0.01 pF
Abstract: HPND4005 HPND-4005
Text: Beam Lead PIN Diode Technical Data HPND-4005 Features • High Breakdown Voltage 120 V Typical • Low Capacitance 0.017 pF Typical GOLD LEADS S1O2/Si3N4 PASSIVATION CATHODE 130 5.1 110 (4.3) 110 (4.3) 80 (3.1) 130 (5.1) 110 (4.3) • Low Resistance 4.7 Ω Typical
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HPND-4005
HPND-4005
hpnd pin 0.01 pF
HPND4005
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HPND4005
Abstract: No abstract text available
Text: Beam Lead PIN Diode Technical Data HPND-4005 Features • High Breakdown Voltage 120 V Typical • Low Capacitance 0.017 pF Typical GOLD LEADS S1O2/Si3N4 PASSIVATION CATHODE 130 5.1 110 (4.3) 110 (4.3) 80 (3.1) 130 (5.1) 110 (4.3) • Low Resistance 4.7 Ω Typical
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HPND-4005
HPND-4005
5965-8877E
HPND4005
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DIODE 4005
Abstract: hpnd pin 0.01 pF HPND-4005 HPND4005 beam lead pin diode
Text: Beam Lead PIN Diode Technical Data HPND-4005 Features • High Breakdown Voltage 120 V Typical • Low Capacitance 0.017 pF Typical GOLD LEADS S1O2/Si3N4 PASSIVATION CATHODE 130 5.1 110 (4.3) 110 (4.3) 80 (3.1) 130 (5.1) 110 (4.3) • Low Resistance 4.7 Ω Typical
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HPND-4005
HPND-4005
5965-8877E
DIODE 4005
hpnd pin 0.01 pF
HPND4005
beam lead pin diode
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HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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DIODE 1N4004G
Abstract: 1N4005G 1N4006G 1N4001G 1N4007G 4002G 4005G 4006G 1N4007G-TB diode 1N4007G
Text: 1N4001G – 1N4007G WTE POWER SEMICONDUCTORS Pb 1.0A GLASS PASSIVATED STANDARD DIODE Features ! Glass Passivated Die Construction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data
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1N4001G
1N4007G
DO-41,
MIL-STD-202,
DO-41
DIODE 1N4004G
1N4005G
1N4006G
1N4001G
1N4007G
4002G
4005G
4006G
1N4007G-TB
diode 1N4007G
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UF4006G-TB
Abstract: UF4007G 4002G 4005G 4006G UF4001G uf4006g
Text: UF4001G – UF4007G WTE POWER SEMICONDUCTORS Pb 1.0A GLASS PASSIVATED ULTRAFAST DIODE Features ! Glass Passivated Die Construction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data
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UF4001G
UF4007G
DO-41,
MIL-STD-202,
DO-41
UF4006G-TB
UF4007G
4002G
4005G
4006G
UF4001G
uf4006g
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diode zd 33
Abstract: 40050
Text: Zubehör für Magnetventile Accessories Solenoid Valves Gerätesteckdosen Plug-In Sockets Technische Daten: Nennspannung AC/DC: 24 V Betriebsstrom: max. 4 A Leitungslänge: 3m Schutzbeschaltung: Z-Diode Gehäuse: schwer entflammbarer Kunststoff Schutzart:
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germanium
Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
Text: KOREA ELECTRONICS CO , LTD. KP—8111 PRODU CT GUIDE TRANSISTOR INTEGRATED CIRCUIT LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL CHARACTERISTICS Ta = 25°C hFE TYPE (V) (mA) (mW) Vce (sat) MAX VCE lC (V) (mA) KTC I815/KTN 5014
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I815/KTN
10I5/KTP
1923/KTN
380TM/KTN
germanium
kia 7208
KIA 7313
germanium transistor
speaker protector
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Untitled
Abstract: No abstract text available
Text: SIEMENS AKTIENGESELLSCHÂF bflE » • «235kD5 ODSlMSb SSt B S I E i SIEM EN S T '03' o! Dioden Diodes HF-Schottky-Diode in Beam Lead Technologie RF Schottky Diode in Beam Lead Technology Zero Bias Zero Bias Type BAT 32 Characteristics TA = 25° C Frequency
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235kD5
OT-23
OT-143
11I181I8I88B
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beam lead pin diode
Abstract: No abstract text available
Text: What HEWLETT* mLliM PACKARD Beam Lead PIN Diode Technical Data HPND-4005 Features • High Breakdown Voltage 120 V Typical • Low Capacitance 0.017 pF Typical • Low Resistance 4.7 £2 Typical • Rugged Construction 4 Grams Minimum Lead Pull • Nitride Passivated
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HPND-4005
HPND-4005
beam lead pin diode
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hughes welder
Abstract: beam lead pin diode
Text: X !ñ BEAM LEAD PIN DIODE HEWLETT PACKARD HPND-4005 HPND-4005TXV Features HIGH BREAKDOWN VOLTAGE 120V Typical LOW CAPACITANCE 0.017 pF Typical LOW RESISTANCE 4.70 Typical RUGGED CONSTRUCTION 4 Grams Minimum Lead Pull 7 Z O /M .3 \ NITRIDE PASSIVATED 1 t i
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HPND-4005
HPND-4005TXV
hughes welder
beam lead pin diode
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K 4005 transistor
Abstract: "Photo Interrupter" PS4001 ir 4009 pa 4009 transistor 4003 K 4005 ps4009
Text: NEC PHOTO INTERRUPTERS ELECTRON DEVICE p s 400 i , p s 4003, p s 4005,p s 4007, p s 4009 PHOTO INTERRUPTER NEPOC SERIES DESCRIPTION The PS4001, PS4003, PS4005, PS4007, PS4009 are photo coupled interrupter modules containing a GaAs light emitting diode and an NPN silicon darlington connected photo-transistor.
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PS4001,
PS4003,
PS4005,
PS4007,
PS4009
CHARACTERIS492
K 4005 transistor
"Photo Interrupter" PS4001
ir 4009
pa 4009
transistor 4003
K 4005
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ZPD 5.1 ITT
Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Text: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers
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F-92223
D-7800
ZPD 5.1 ITT
ZPD ITT
diode zener ZD 88
germanium
BYY32
germanium transistor
CJ 4148 ZENER
BAW21
ITT ZPD 11
itt germanium diode
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Untitled
Abstract: No abstract text available
Text: HEWLETT-PACKARDn CMPNTS 2GE D B 4447SÔ4 QDQS?2b BEAM LEAD PIN DIODE fZ Z J l H E W L E T T X '& J P A C K A R D T Q HPND-4005 HPND-4005TXV T " " 0'I'-1s~ Features HIGH BREAKDOWN VOLTAGE 120V Typical LOW CAPACITANCE 0.017 pF Typical LOW RESISTANCE 4.70 Typical
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4447SÃ
HPND-4005
HPND-4005TXV
real6-17
44475A4
000S72&
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handling of beam lead diodes
Abstract: No abstract text available
Text: fZSI HEWLETT k"KM PACKARD Beam Lead PIN Diode Technical Data HPND-4005 Features • High Breakdown Voltage 120 V Typical - G O LD L E A P S - v , /,*, 8 02 81 1 P CATHODE a s s iv a t io n • Low Capacitance 0.017 pF Typical • Low Resistance 4.7 Q Typical
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HPND-4005
HPND-4005
handling of beam lead diodes
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Diode IN 5404
Abstract: diode in 5401 IN 4004 diodes DIODE IN 4002 4002 diode DIODE 4004 diode IN 4004 5401 diode diode N 4007 KDA 1.2
Text: HERRMANN T ^ O I-1 5 KG 4SE J> m 443bS7S 0000123 3 • HRfIN Drahtdioden Lead mounted diodes Diodes à fils Diodentyp V T ype o f d io d e rrm V BR If a v Type de diode 4001 4002 4003 4004 4005 4006 4007 1N 5400 5401 5402 5403 5404 5405 5406 5407 5408 R 250-A
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3b57S
Diode IN 5404
diode in 5401
IN 4004 diodes
DIODE IN 4002
4002 diode
DIODE 4004
diode IN 4004
5401 diode
diode N 4007
KDA 1.2
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DIODE 4005
Abstract: TXV-P
Text: HEWLETT-PACKARD-, 4447584 Sñ CMPNTS H EW L E T T - P A C K A R D » m » T | m 4M7SÖ4 CMPNTS 58C DOOS^ 02943 HIGH RELIABILITY BEAM LEAD PIN DIODE HEW LETT PACKARD 3 DT*Ô7*J5” TXVP-4005 Generic HPND-4005 Features QUALITY PERFORMANCE TESTED Test Program Patterned After MIL-S-19500
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HPND-4005)
TXVP-4005
MIL-S-19500
TXVP-4005
DIODE 4005
TXV-P
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