Untitled
Abstract: No abstract text available
Text: Application Guide A A a ● Abbreviation of: ● atto quintillionth , 10-18 ● area ● acceleration ac (AC) ● alternating current ● activated carbon ASCII ● American Standard Code for Information Interchange ASIC ● all purpose symbolic instruction code
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N6LG
Abstract: 369D NTD18N06L NTD18N06LG NTD18N06LT4 NTD18N06LT4G DS835B 18N6L 18n6lg
Text: NTD18N06L Power MOSFET 18 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com V BR DSS Features • Pb−Free Packages are Available
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NTD18N06L
NTD18N06L/D
N6LG
369D
NTD18N06L
NTD18N06LG
NTD18N06LT4
NTD18N06LT4G
DS835B
18N6L
18n6lg
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DIODE vn SMD
Abstract: No abstract text available
Text: bbS3^31 005b3fl7 7SS MARX Philips Semiconductors Preliminary specification BB131 VHF variable capacitance diode N AHLR PHILIPS/DISCRETE DESCRIPTION bTE D — • QUICK REFERENCE DATA The BB131 is a silicon variable capacitance diode in planar technology, intended for use as a
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005b3fl7
BB131
BB131
OD323.
M8C777
DIODE vn SMD
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE D • bbSBTBl DD2fib03 344 H A P X ESM4045A V ESM4045D(V) ; v SILICON DARLINGTON POWER TRANSISTORS NPN high-current switching Darlington transistor in ISOTOP package, intended for use in motor drives, converters, switch mode power supplies (SMPS) and uninterruptable power supplies (UPS).
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DD2fib03
ESM4045A
ESM4045D
4045D
Csat/50;
ICsat/50;
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Philips MBB
Abstract: BB804
Text: • btiSa'ïHl 0 0 2 4 4 1 ? 40û H I A P X N AMER P H I L I P S / D I S C R E T E BB804 b?E ]> VHF VARIABLE CAPACITANCE DOUBLE DIODE The BB804 is a variable capacitance d ouble diode in planar te ch no lo g y w ith com m on cathode in a plastic SO T23 envelope. I t is intended fo r FM tu n in g especially fo r car radios.
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BB804
BB804
Philips MBB
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE D L.b53T31 003Db4S 473 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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b53T31
003Db4S
O220AB
K455-100A/B
BUK455
-100A
-100B
BUK455-100A/B
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1FW smd
Abstract: SMD 1FW 1FW 55 1FW 14 smd 1FW 75 1FW 85 1FW 29 BTS100 1FW 60 smd code 12.00 Jn
Text: SIEMENS Smart Highside Power Switch TEMPFET Features • • • • P channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Type Vos h BTS 100 -5 0 V -8 A ^DS<on 0.3 £2 Package Ordering Code
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O-220AB
C67078-A5007-A2
E3045
E3045A
C67078-A5007-A7
C67078-A5007-A12
1FW smd
SMD 1FW
1FW 55
1FW 14 smd
1FW 75
1FW 85
1FW 29
BTS100
1FW 60
smd code 12.00 Jn
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Untitled
Abstract: No abstract text available
Text: DH aHBSbOS 00Ö1403 241 SIEMENS PROFET BTS 432 D2 Smart Highside Power Switch Product Summary Features • • • • • • • • • • • • Load dump and reverse battery protection1 80 V'Load dump Clamp of negative voltage at output 58 Vbb- V 'o u t Avalanche Clamp
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BTS 432 D2 smd
Abstract: 432d2 POWER SUPPLY BTS SIEMENS 432I2 siemens scr scr siemens
Text: SIEMENS PROFET BTS 432 D2 Smart Highside Power Switch Product Summary Features • • • • • • • • • • • • Load dump and reverse battery protection1 80 H o a d dump Clamp ot negative voltage at output 58 Vbb-VouT A v a la n c h e C la m p
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BTS100
Abstract: No abstract text available
Text: SIEMENS Smart Highside Power Switch TEMPFET BTS 100 Features • • • • P channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin 1 2 3 G D S Type V„s /d ^DS on Package Ordering Code
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TQ-220AB
C67078-A5007-A2
fl235bQ5
A23Sb05
E3045
E3045A
C67078-A5007-A7
C67078-A5007-A12
BTS100
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BUK455-100A
Abstract: BUK455 100-C BUK455-100B T0220AB
Text: N AUER PHILIPS/DISCRETE bTE D • L.b53T31 0D3DL>i45 473 « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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0D3Db45
BUK455-100A/B
T0220AB
BUK455
-100A
-100B
BUK455-100A
100-C
BUK455-100B
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4 pin hall effect dC motor
Abstract: IC 555 control motor brushless hall device 810 gd114 DC MOTOR DRIVER Hall 221 718 mx diode diode zener 718 motor driver ic
Text: Advance Data Sheet February 1994 M A T bT Microelectronics ATT2133AAP Off-Line Brushless dc Motor Driver IC Features Description • Direct ac-to-dc conversion The ATT2133AAP is designed to provide complete control and drive to run a brushless dc motor directly
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ATT2133AAP
DS94-017HVIC
GD11411
4 pin hall effect dC motor
IC 555 control motor brushless
hall device 810
gd114
DC MOTOR DRIVER
Hall 221
718 mx diode
diode zener 718
motor driver ic
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7500B
Abstract: BB49 IF-20 PL000 4j13
Text: OPTEK TECHNOLOGY INC DbE D | bT^fiSflD D 0 D D 4 4 0 fl | O p to e le c tr o n ic s D iv is io n T R W Electronic Components Group i ^ H F Product Bulletin PL0QQ3 September 198 6 “^ T T *-/ / — / ' 3 Miniature Reflective Object Sensor Type 0PM101 -.1 7 3 4 40 —
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D0DG440
PL0003
0PM101
01STANCE
671B0
7500B
BB49
IF-20
PL000
4j13
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TCA160
Abstract: BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300
Text: MULLARD DATA BOOK 1973-74 ER R A TA A U G U S T 1973 j\ 1 d - ^ Mullard Limited Renewal Sales Department Mullard House Torrington Place London WC1E 7HD N / , S E M IC O M D U C Type No. Page No. AC187 13 Correction Delete minus signs to read: *IC = 300m A;
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AC187
BC157
BC158
BC159
BC186
BC187
BD201
BD202
BD203
BD204
TCA160
BY164
Mullard C296
TAA310A
TAA435
TAA700
TBA550
TBA480
PCC88
TAA300
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ESM4045AV
Abstract: ESM4045A FASTON ESM4045D CSA50 4045D
Text: N AMER PHILIPS/DISCRETE bl E D • bb5 3 ^ 3 ]> D Q E â b 0 3 344 *APX ESM4045A V ESM4045D(V) SILICON DARLINGTON POWER TRANSISTORS NPN high-current switching Darlington transistor in ISOTOP package, intended fo r use in m otor drives, converters, switch mode power supplies (SMPS) and uninterruptable power supplies (UPS).
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ESM4045A
ESM4045D
4045D
Csat/50
ESM4045AV
FASTON
CSA50
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1SS97
Abstract: No abstract text available
Text: POIiJEREX INC 3^ E D 75^4^21 IPRX 00G 415b b m/HEHBX 3 3 '- 2 £ ^ KD224505HB Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 1SS97 412 925-7272 Powerex Europe, S.A., 428 Avenue G, Durand, BP107,72003 Le Mans, France (43)41.14.14 High-Beta Dual Darlington
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KD224505HB
1SS97
BP107
Amperes/600
1SS97
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LT 0216 diode
Abstract: No abstract text available
Text: SGS-THOMSON MDS50 RiilD @lS il[L[l(gT[S©liD©i DIODE / THYRISTOR MODULE FEATURES • VDr m =V rrm UP TO 1200 V = 35A ■ HIGH SURGE CAPABILITY ■ INSULATED PACKAGE : INSULATING VOLTAGE 2500 V(rmS ■ It(AV) DESCRIPTION The MDS50 family are constitued of one rectifier
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MDS50
MDS50
LT 0216 diode
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BPW22A
Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey
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BS9000,
D3007
HE4000B
80RIBUTION
BS9000
BPW22A
cm .02m z5u 1kv
pin configuration of BFW10
la4347
B2X84
TDA3653 equivalent
TRIAC TAG 9322
HEF40106BP equivalent
fx4054 core
dsq8
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diode 6t6
Abstract: 1N4752A 1N4732A ln4744a 1N4728A 1N4729A 1N4730A 1N4731A 1N4733A 1N4734A
Text: S e m i c o n d u c t o r " - 1N4752A 1N4728A - 1 N4752A Series One Watt Zeners Tolerance: A = 5% TA = 25°C unless otherwise noted Parameter Value Units -65 to +200 Maximum Junction Operating Temperature + 200 Lead Temperature 1/16" from case for 10 seconds
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1N4728A
-1N4752A
1N4741A
1N4742A
1N4743A
1N4744A
1N4745A
1N4746A
1N4747A
1N4748A
diode 6t6
1N4752A
1N4732A
ln4744a
1N4729A
1N4730A
1N4731A
1N4733A
1N4734A
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Untitled
Abstract: No abstract text available
Text: • fl23Sb05 0 0 * 1 3 01 6 Sb^ ■ SIEMENS PROFET BTS 621 L1 Smart Two Channel Highside Power Switch Features • • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection including load dump
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fl23Sb05
PT05aa7
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Untitled
Abstract: No abstract text available
Text: TRANSIENT VOLTAGE SUPPRESSORS 400W S ER IES TVS DIO DES / DO-41 CASE 7 4 0 0 W £ ?«J Breakdown Voltage P4KE6.8 P4KE6.8A P4KE7.5 P4KE7.5A P4KE8.2 P4KE8.2A P4KE9.1 P4KE9.1 A P4KE10 P4KE10A P4KE11 P4KE11A P4KE12 P4KE12A P4KE13 P4KE13A P4KE15 P4KE15A P4KE16
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DO-41
P4KE10
P4KE10A
P4KE11
P4KE11A
P4KE12
P4KE12A
P4KE13
P4KE13A
P4KE15
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Untitled
Abstract: No abstract text available
Text: TRANSIENT VOLTAGE SUPPRESSORS ^ 600W SERIES TVS DIODES / 'S i ^ Is DO-214AA CASE 3 600W $ ?>] mm Breakdown Voltage V br TYPE P6FMBJ6.8 P6FMBJ6.8A P6FMBJ7.5 P6FMBJ7.5A P6FMBJ8.2 P6FMBJ8.2A P6FMBJ9.1 P6FMBJ9.1A P6FMBJ10 P6FMBJ10A P6FMBJ11 P6FMBJ11A P6FMBJ12
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DO-214AA
P6FMBJ10
P6FMBJ10A
P6FMBJ11
P6FMBJ11A
P6FMBJ12
P6FMBJ12A
P6FMBJ13
P6FMBJ13A
P6FMBJ15
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JD225005
Abstract: transistor c 3927 JD224505 ZD 103 ma BP107 vdo x10 VQS-15V
Text: P Ol i l E RE X m m 3=1E D INC a t M 7STMtiSl GG0MS12 S IPRX JD224505 JD2250Q5 K Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Dual FETMOD
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G0DM51E
JD224505
JD2250Q5
BP107,
Amperes/450-500
JD224505,
JD225005
JD225005
Amperes/450/500
transistor c 3927
ZD 103 ma
BP107
vdo x10
VQS-15V
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SOT-90B
Abstract: No abstract text available
Text: SL5500 SL5501 SL5511 y v OPTOCOUPLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and a silicon npn photo transistor with accessible base. Plastic envelopes. Suitable fo r T TL integrated circuits. Features • High output/input DC current transfer ratio
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SL5500
SL5501
SL5511
bbS3T31
00355b?
SOT-90B
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