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    MDS50 Search Results

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    MDS50 Price and Stock

    Microchip Technology Inc MDS500L

    RF TRANS NPN 70V 1.09GHZ 55ST
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    DigiKey MDS500L Bulk 25
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    • 100 $507.5248
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    ADLINK Technology Inc MDS-500 M8G

    ADLINK Technology TGL, i5-1145G7E, 1x 8GB RAM, 1x DP 1.4, 3 x HDMI 2.0, 4 x USB 3.0, 2x GbE, 1x RS-232, 1x Line In/Out
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    Mouser Electronics MDS-500 M8G
    • 1 $1345.82
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    Amphenol Positronic GM9MDS500000/AA

    Rectangular MIL Spec Connectors
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    Mouser Electronics GM9MDS500000/AA
    • 1 $27.9
    • 10 $24.44
    • 100 $21.87
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    Interstate Connecting Components GM9MDS500000/AA
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    Amphenol Positronic GM34MDS500000/AA

    Rectangular MIL Spec Connectors
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    Mouser Electronics GM34MDS500000/AA
    • 1 $76.63
    • 10 $70.33
    • 100 $61.75
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    Interstate Connecting Components GM34MDS500000/AA
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    Amphenol Positronic GM9MDS500000

    Rectangular MIL Spec Connectors
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    Mouser Electronics GM9MDS500000
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    • 100 $23.61
    • 1000 $21.82
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    Newark GM9MDS500000 Bulk 10
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    • 10 $27.79
    • 100 $23.76
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    Interstate Connecting Components GM9MDS500000
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    MDS50 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MDS50 STMicroelectronics Diode, Diode / Thyristor Module Original PDF
    MDS50 STMicroelectronics DIODE / SCR MODULE Original PDF
    MDS500L Microsemi Bipolar/LDMOS Transistor Original PDF
    MDS50-1000 STMicroelectronics DIODE / THYRISTOR MODULE Original PDF
    MDS50-1200 STMicroelectronics DIODE - SCR MODULE Original PDF
    MDS50-1200 STMicroelectronics DIODE - SCR MODULE Original PDF
    MDS50-1200 STMicroelectronics DIODE / THYRISTOR MODULE Scan PDF
    MDS50-800 STMicroelectronics DIODE - SCR MODULE Original PDF
    MDS50-800 STMicroelectronics DIODE - SCR MODULE Original PDF
    MDS50-800 STMicroelectronics DIODE / THYRISTOR MODULE Scan PDF

    MDS50 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MDS50 Naina Semiconductor Ltd. Three Phase Bridge Rectifier, 50 Amps Features • • • Easy connections Excellent power volume ratio Insulated type MDS Voltage Ratings TJ = 25oC unless otherwise noted Type number Voltage code MDS50 80 100 120 140 160


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    MDS50 PDF

    TSM 1220

    Abstract: MDS50
    Text: MDS50 DIODE / THYRISTOR MODULE . . FEATURES VDRM = VRRM UP TO 1200 V IT AV = 35 A HIGH SURGE CAPABILITY INSULATED PACKAGE : INSULATING VOLTAGE 2500 V(RMS) A G I DESCRIPTION The MDS50 family are constitued of one rectifier diode and general purpose SCR. Suited for


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    MDS50 MDS50 TSM 1220 PDF

    BRIDGE-RECTIFIER 12v 1A

    Abstract: BRIDGE-RECTIFIER 12v 5A TSM 1220 BRIDGE-RECTIFIER 5v 1A MDS50 thyristor 12V it 1A
    Text: MDS50 DIODE / THYRISTOR MODULE . . FEATURES VDRM = VRRM UP TO 1200 V IT AV = 35 A HIGH SURGE CAPABILITY INSULATED PACKAGE : INSULATING VOLTAGE 2500 V(RMS) A G I DESCRIPTION The MDS50 family are constitued of one rectifier diode and general purpose SCR. Suited for


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    MDS50 MDS50 BRIDGE-RECTIFIER 12v 1A BRIDGE-RECTIFIER 12v 5A TSM 1220 BRIDGE-RECTIFIER 5v 1A thyristor 12V it 1A PDF

    Untitled

    Abstract: No abstract text available
    Text: MDS50 Three Phases Rectification Bridge Modules Features:  Isolated mounting base 2500V~  Pressure contact technology with VRSM VRRM Type & Outline 900 V 800 V MDS50-08-219H5 1300 V 1200 V MDS50-12-219H5 Increased power cycling capability  Space and weight savings


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    MDS50 MDS50-08-219H5 MDS50-12-219H5 MDS50-14-219H5 MDS50-16-219H5 219H5 PDF

    MDS500L

    Abstract: 1030 PULSED 32uS MODE-S .400 x .500
    Text: MDS500L 500 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION CASE OUTLINE 55ST Style 1 The MDS500L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the 1030 / 1090 MHz frequency band. The transistor includes input prematch for broadband performance. The device


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    MDS500L MDS500L 1030 PULSED 32uS MODE-S .400 x .500 PDF

    Transistor J182

    Abstract: j182 j182 transistor J221 j161 j182 ic SN723 MDS500L J160 J1 TRANSISTOR
    Text: MDS500L 500 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION CASE OUTLINE 55ST Style 1 The MDS500L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the 1030 - 1090 MHz frequency band. The transistor includes input and output prematch for broadband performance.


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    MDS500L MDS500L Transistor J182 j182 j182 transistor J221 j161 j182 ic SN723 J160 J1 TRANSISTOR PDF

    MDS50A1600

    Abstract: MDQ 50 A full wave rectifier SINGLE PHASE single phase bridge rectifier MDQ50A1200
    Text: THREE/SINGLE PHASE BRIDGE RECTIFIER MDS50A1600 MDQ50A1200 Features • Robust plastic case with screw terminals • Large, isolated base plate • Blocking voltage to 1600 V • High surge currents •MDQ = single phase bridge rectifier MDS = three phase bridge


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    MDS50A1600 MDQ50A1200 MDS0A1200V MDS0A1600V MDQ0A1200V MDQ0A1600V TC102 50/60HZ, Tj150at Tj25IFM100A, MDQ 50 A full wave rectifier SINGLE PHASE single phase bridge rectifier MDQ50A1200 PDF

    MDQ 50 A

    Abstract: No abstract text available
    Text: MDS50 Three Phases Rectification Bridge Modules Features: n Isolated mounting base 2500V~ Pressure contact technology with Increased power cycling capability n Space and weight savings Typical Applications n Inverter n Inductive heating n Chopper IO VRRM


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    MDS50 220F5/218F5/219F5 MDS50 220F5 219F5 218F5 MDQ 50 A PDF

    MDS500L

    Abstract: 1030 mhz 32us
    Text: MDS500L 500 Watts, 50 Volts, Pulsed Avionics 1030 MHz PRELIMINARY GENERAL DESCRIPTION CASE OUTLINE 55ST Style 1 The MDS500L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the 1030 MHz frequency band. The transistor includes input prematch for broadband performance. The device has


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    MDS500L MDS500L 1030 mhz 32us PDF

    Untitled

    Abstract: No abstract text available
    Text: MDS50 Three Phases Rectification Bridge Modules Features:  Isolated mounting base 2500V~  Pressure contact technology with VRSM VRRM Type & Outline 900 V 800 V MDS50-08-218H5 1300 V 1200 V MDS50-12-218H5 Increased power cycling capability  Space and weight savings


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    MDS50 MDS50-08-218H5 MDS50-12-218H5 MDS50-14-218H5 MDS50-16-218H5 218H5 PDF

    Transistor J182

    Abstract: No abstract text available
    Text: MDS500L 500 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION CASE OUTLINE 55ST Style 1 The MDS500L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the 1030 - 1090 MHz frequency band. The transistor includes input and output prematch for broadband performance.


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    MDS500L MDS500L Transistor J182 PDF

    bta41-600b application

    Abstract: po130aa BTA41-600B TYN616 BTA41-800B BTB24-600BW BTA06-600B bta40 circuit TYN1012 BTA26-800B internal circuit
    Text: Thyristors Advanced Power Switching Reference Guide SENSITIVE GATE SCRs IT RMS (A) VRRM / VDRM (V) P/N ITSM* (A) IGT max (µA) IH max (mA) 0.25 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 1.25 1.25 1.25 1.25 1.25 1.25 1.25 1.25 4 4 4 4 4 4 4


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    P0102BL P0102DA P0102DN P0111DA P0111DN P0118DA P0118DN XL0840 P0102MA P0102MN bta41-600b application po130aa BTA41-600B TYN616 BTA41-800B BTB24-600BW BTA06-600B bta40 circuit TYN1012 BTA26-800B internal circuit PDF

    Diode SCR

    Abstract: BRIDGE isotop MDS35 MDS50 MDS80 SCR thyristor test MDS35-XXX
    Text: MDS35 / 50 / 80 Series DIODE / SCR MODULE MAIN FEATURES: Symbol Value Unit IT RMS 50-70-85 A V DRM/VRRM 800 and 1200 V IGT 50 and 100 mA DESCRIPTION Packaged in ISOTOP modules, the MDS Series is based on the half-bridge SCR-diode configuration. They are suitable for high power applications,


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    MDS35 E81734) Diode SCR BRIDGE isotop MDS50 MDS80 SCR thyristor test MDS35-XXX PDF

    scr phase angle controller

    Abstract: MDS35 MDS50 MDS80 Isotop 70A, 1200V scr MDS35X marking te
    Text: MDS35 / 50 / 80 Series DIODE / SCR MODULE MAIN FEATURES: Symbol Value Unit IT RMS 50-70-85 A V DRM/VRRM 800 and 1200 V IGT 50 and 100 mA DESCRIPTION Packaged in ISOTOP modules, the MDS Series is based on the half-bridge SCR-diode configuration. They are suitable for high power applications,


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    MDS35 E81734) scr phase angle controller MDS50 MDS80 Isotop 70A, 1200V scr MDS35X marking te PDF

    ICS501I

    Abstract: No abstract text available
    Text: BACK ICROCLOCK ICS501 LOCO PLL Clock Multiplier Description Features The ICS501 LOCO™ is the most cost effective way to generate a high quality, high frequency clock output from a lower frequency crystal or clock input. The name LOCO stands for LOw Cost Oscillator, as it is designed to replace crystal


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    ICS501 295-9800tel· 295-9818fax MDS501F ICS501I PDF

    TYN604 scr

    Abstract: scr TYN604 BTW69-1000N TYN656 X0405XF tyn610 TYN116 tyn112 TYN256 TN1625-800G
    Text: SCR & TRIAC SCRs D2PAK DPAK SOT 223 SOT23 SURFACE MOUNT SCRs Tj max = 125 °C except TS820-xxxB and TS420-xxxB: 110 °C Type IT(RMS) Ta (1) Tl (2) Tc (3) Ttab (4) (A) (°C) VRRM VDRM ITSM (V) (A) IRRM @ IDRM @ Tj max max (mA) Tj = 25°C dv/dt di/dt 67% V


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    TS820-xxxB TS420-xxxB: OT223 P0102xL P0109xL P0102xN X0202xN TS420-400B TS420-600B TS820-400B TYN604 scr scr TYN604 BTW69-1000N TYN656 X0405XF tyn610 TYN116 tyn112 TYN256 TN1625-800G PDF

    LT 0216 diode

    Abstract: No abstract text available
    Text: SGS-THOMSON MDS50 RiilD @lS il[L[l(gT[S©liD©i DIODE / THYRISTOR MODULE FEATURES • VDr m =V rrm UP TO 1200 V = 35A ■ HIGH SURGE CAPABILITY ■ INSULATED PACKAGE : INSULATING VOLTAGE 2500 V(rmS ■ It(AV) DESCRIPTION The MDS50 family are constitued of one rectifier


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    MDS50 MDS50 LT 0216 diode PDF

    scs thyristor

    Abstract: sgs Thomson Thyristor B090 MDS50 Diode LT 410 thyristor N 600 ch 14 thyristor t 250 n 1200
    Text: Æ T S C S -TH O M S O N MDS50 DIODE / THYRISTOR MODULE FEATURES • V DRM = V r r m UP TO 1200 V ■ lT AV = 35 A . HIGH SURGE CAPABILITY ■ INSULATED PACKAGE: INSULATING VOLTAGE 2500 V(rm S ) DESCRIPTION The MDS50 family are constitued of one rectifier


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    MDS50 VOLTAGE2500 MDS50 scs thyristor sgs Thomson Thyristor B090 Diode LT 410 thyristor N 600 ch 14 thyristor t 250 n 1200 PDF

    Diode LT 209

    Abstract: SCR thyristor test
    Text: SGS-IHOMSON MDS50 ly DIODE / THYRISTOR MODULE PRELIMINARY DATASHEET FEATURES • V d RM = V rrm UP TO 1200 V ■ lT AV = 3 5 A ■ HIGH SURGE CAPABILITY ■ INSULATED PACKAGE : INSULATING VOLTAGE 2500 V(RMS) DESCRIPTIO N The MDS50 family are consist of one rectifier


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    MDS50 MDS50 Diode LT 209 SCR thyristor test PDF

    LT 0216 diode

    Abstract: 20/LT 0216 diode Diode LT 410
    Text: SGS-THOMSON ;[Li MM D(S MDS50 DIODE / THYRISTOR MODULE FEATURES • V qrm = V rrm UP TO 1200 V ■ lT(AV) = 35 A . HIGH SURGE CAPABILITY . INSULATED PACKAGE : INSULATING VOLTAGE 2500 V(RMS) DESCRIPTION The MDS50 family are constitued of one rectifier diode and general purpose SCR. Suited for


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    MDS50 MDS50 LT 0216 diode 20/LT 0216 diode Diode LT 410 PDF

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


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    PDF

    MTX70A

    Abstract: FF300R12KS4 MOTOR SOFT START MDS100 mfq 60A bridge rectifier SSC AC welder IGBT circuit ZG300HFL120C2S 3phase bridge diode mds 60 SKM200GB125DN
    Text: ì Power Modules STANDARD THYRISTOR MODULE STANDARD DIODE MODULE 27 THYRISTOR-DIODE MODULE 28 FAST THYRISTOR / DIODE MODULE 29 NON-INSULATION POWER MODULE CAPSULE VERSION POWER MODULE & MOUNTING CLAMP BRIDGE RECTIFER MODULE 30-31 31 32-34 £ 4 t S / i B t W f d U : « * « » SCHOTTKY/SUPER FAST RECOVERY DIODE MODULE 34-35


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    3s300A ZG50HFL120C1S SKM75GB128DN BSM50GB120DLC ZG75HFL120C1S SKM100GB128DN BSM75GB120DLC ZG100HFL120C1S SKM145GB128DN BSM100GB120DLCK MTX70A FF300R12KS4 MOTOR SOFT START MDS100 mfq 60A bridge rectifier SSC AC welder IGBT circuit ZG300HFL120C2S 3phase bridge diode mds 60 SKM200GB125DN PDF

    MPS203A

    Abstract: MDG501S MPS401A MDG201S MPG206A MPS401 MDG304S MDS201S mps402 MPS304
    Text: MDG, MDS, MPG & MPS SERIES DIP SWITCHES DPST, SPDT, 3PST, 4PST & DPDT MODELS FEATURES Gold or silver plated contacts. Self-cleaning contacts. UL94V-0 materials used throughout. Process compatible with tape seal. Dual in-line .100" x .300" term, spacing. GENERAL SPECIFICATIONS


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    UL94V-0 100mA MPS602B MPG601B MPG601BT MPG602B MPG602BT MPG603B MPG603BT MPS601B MPS203A MDG501S MPS401A MDG201S MPG206A MPS401 MDG304S MDS201S mps402 MPS304 PDF

    TRIAC TAG 280 600

    Abstract: MTT500A D150N MTT-40 MTT250A D300N KBPC05 stud version triac DT300-300 D250N
    Text: H UAJING Standard Recovery Discrete 2 Features □ Wide current range □ Peak reverse voltage up to 1600V □ High surge current capability □ Stud cathode and stud anode version Typical Applications □ Power supplies □ Machine tool controls □ Power supplies


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    MDS30E. MDS50E. MDS75E. MDS100E. TRIAC TAG 280 600 MTT500A D150N MTT-40 MTT250A D300N KBPC05 stud version triac DT300-300 D250N PDF