Untitled
Abstract: No abstract text available
Text: 2 3 2 2 3 3 1 1 4 1 SO 4 Anti-Parallel Parallel APT2X30D100J APT2X31D100J 27 2 T- 4 APT2X31D100J 1000V 28A APT2X30D100J 1000V 28A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode
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APT2X30D100J
APT2X31D100J
APT2X31D100J
APT2X30D100J
OT-227
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Untitled
Abstract: No abstract text available
Text: IRF6898MPbF IRF6898MTRPbF HEXFET Power MOSFET plus Schottky Diode Typical values unless otherwise specified l RoHs Compliant Containing No Lead and Bromide l Integrated Monolithic Schottky Diode l Low Profile (<0.7 mm) lDual Sided Cooling Compatible
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IRF6898MPbF
IRF6898MTRPbF
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darlington NPN 600V 8a transistor
Abstract: npn darlington 400v 10a npn darlington 6A 400V TO218 20A Darlington NTE256 22a ic NPN Transistor 600V npn darlington 400v 1.*a darlington NPN 600V
Text: NTE256 Silicon NPN Transistor Darlington w/Damper Diode Description: The NTE256 is a silicon epitaxial planer NPN Darlington transistor in a TO218 type package with an integrated Base–Emitter speed–up diode. This device is particularly suitable for use as an output
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NTE256
NTE256
darlington NPN 600V 8a transistor
npn darlington 400v 10a
npn darlington 6A 400V
TO218 20A Darlington
22a ic
NPN Transistor 600V
npn darlington 400v 1.*a
darlington NPN 600V
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GW50H60DF
Abstract: GW50
Text: STGW50H60DF 50 A, 600 V field stop trench gate IGBT with Ultrafast diode Features • High speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time ■ Ultrafast soft recovery antiparallel diode
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STGW50H60DF
O-247
GW50H60DF
GW50
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BC647
Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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MMBD4148
200MA
OT-23
MBR0540
OD-123
1000MA
DO-214AC
B340A
5245B
225MW
BC647
bc657
C1093
smd diode c644
DIODE SMD c336
BC679
BC625
smd diode C645
smd diode c640
smd diode R645
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77C7
Abstract: 887c 1r12r
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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R222 smd
Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
Text: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP
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CA-001175
BA41-00418A
BA62-00194A
BA62-00306A
BA68-40005L
120OHM
143OHM/132MHZ
213OHM/390MHZ,
R222 smd
RA516-1
2007-000162
RA523-1
C627 SOT-23
smd R540
63MIL
d516 gp
SMD R618
SMD C548
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GW50H60DF
Abstract: STGW50H60DF
Text: STGW50H60DF 50 A, 600 V field stop trench gate IGBT with Ultrafast diode Features • Very high speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time ■ Ultrafast soft recovery antiparallel diode
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STGW50H60DF
O-247
GW50H60DF
STGW50H60DF
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AM01504v1
Abstract: GW50H60DF
Text: STGW50H60DF 50 A, 600 V field stop trench gate IGBT with Ultrafast diode Preliminary data Features • Very high speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time ■ Ultrafast soft recovery antiparallel diode
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STGW50H60DF
O-247
AM01504v1
GW50H60DF
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CMOD2004
Abstract: 1N3070 CMDD2004 CMLD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004 CPD80V
Text: PROCESS CPD80V Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au.As - 13,000Å
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CPD80V
CMPD2003
CMPD2004
CMPD2005
1N3070
CMDD2004
CMSD2004
CMOD2004
CMXD2004
CMLD2004
CMOD2004
1N3070
CMDD2004
CMLD2004
CMPD2003
CMPD2004
CMSD2004
CMXD2004
CPD80V
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GP14NC60
Abstract: GF14NC60 GF14NC GB14NC60 GB14NC60KD gf14nc6 gf14nc60k gb14nc GB14NC6 JESD97
Text: STGB14NC60KD STGF14NC60KD - STGP14NC60KD 14 A - 600 V - short circuit rugged IGBT Features 2 • Low on-voltage drop VCE(sat ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Switching losses include diode recovery energy ■ Very soft ultra fast recovery antiparallel diode
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STGB14NC60KD
STGF14NC60KD
STGP14NC60KD
O-220
O-220FP
GP14NC60
GF14NC60
GF14NC
GB14NC60
GB14NC60KD
gf14nc6
gf14nc60k
gb14nc
GB14NC6
JESD97
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samsung r540
Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Text: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP
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ZD500
QF500
RHU002N06
200MA
OT-323
F820P
33x33mm
500MHz
K4J52324QC
512Mbit
samsung r540
Samsung R590
R721-R725
C732 SMD
10000NF
R616 R617
R714-R715
samsung r580
b16 r649
Smd q535
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Untitled
Abstract: No abstract text available
Text: IMBD4448 VISHAY Vishay Semiconductors Small Signal Diode Features 3 • Silicon Epitaxial Planar Diodes • Fast switching diode in case SOT-23, especially suited for automatic insertion. • This diodes are also available in other case styles including: the DO-35 case with the type
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IMBD4448
OT-23,
DO-35
1N4448,
LL4448,
OD-123
1N4448W.
OT-23
IMBD4448
IMBD4448-GS18
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Untitled
Abstract: No abstract text available
Text: PD - 96371A IRF6898MPbF IRF6898MTRPbF HEXFET Power MOSFET plus Schottky Diode Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 25V max ±16V max 0.8mΩ@ 10V 1.2mΩ@ 4.5V
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6371A
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MSK4357
Abstract: 1000 Amp current diode
Text: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 28 Amp Capability Ultra Low Thermal Resistance Integral Free Wheeling Fast Recovery Epitaxial Diode (FRED)
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MIL-PRF-38534
25KHz
MSK4357
1000 Amp current diode
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Untitled
Abstract: No abstract text available
Text: PD - 96371B IRF6898MPbF IRF6898MTRPbF HEXFET Power MOSFET plus Schottky Diode Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 25V max ±16V max 0.8mΩ@ 10V 1.2mΩ@ 4.5V
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96371B
Schottky469
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CPD74
Abstract: No abstract text available
Text: PROCESS CPD74 Switching Diode Monolithic Isolated Quad Switching Diode Chip PROCESS DETAILS Die Size 25 x 25 MILS Die Thickness 6.0 MILS Anode 1, 2, 3, 4 Bonding Pad Area 3.5 x 4.0 MILS Cathode 1, 2, 3, 4 Bonding Pad Area 3.5 x 4.0 MILS Top Side Metalization
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CPD74
28-August
CPD74
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DB82
Abstract: China power laser diode price list Coherent B1-885-20C-19-30-A high power laser diode price list
Text: 885 nm Bars Laser Diodes Linear Array CW Bars Laser diode bars, based on our aluminum-free active area AAA , laser diode technology give you high power and long-life performance in the 885 nm wavelength range. Because there’s no aluminum, there’s no oxidation at the facets — the leading
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1-877-4DIODES
MC-DB82-2001-2
5M0601
DB82
China power laser diode price list
Coherent
B1-885-20C-19-30-A
high power laser diode price list
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71307
Abstract: No abstract text available
Text: Si4852DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) rDS(on) (W) 30 ID (A) 0.0120 @ VGS = 10 V 11 0.0175 @ VGS = 4.5 V 9.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage IF (A) 30 0.53 V @ 3 A
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Si4852DY
S-01838--Rev.
28-Aug-00
71307
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semikron skiip 33
Abstract: No abstract text available
Text: SKiiP 28AC066V1 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Inverter *#4 A * #4 4 . '& /9
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28AC066V1
semikron skiip 33
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30D100J
Abstract: apt2x30d100j 30D100 2878 sgs
Text: 2 1 3 4 2 1 Anti-Parallel APT2X30D100J 3 4 2 1 3 4 Parallel APT2X31D100J 7 22 TO S "UL Recognized" ISOTOP ® APT2X31D100J APT2X30D100J 1000V 1000V 28A 28A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES
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APT2X30D100J
APT2X31D100J
APT2X31D100J
OT-227
30D100J
apt2x30d100j
30D100
2878 sgs
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Untitled
Abstract: No abstract text available
Text: GenX3TM 1400V IGBTs w/ Diode IXGH28N140B3H1 IXGX28N140B3H1 IXGK28N140B3H1 Avalanche Rated VCES = 1400V IC110 = 28A VCE sat ≤ 3.60V TO-247 (IXGH) G Symbol Test Conditions VCES TJ = 25°C to 150°C 1400 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1400 V VGES
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IXGH28N140B3H1
IXGX28N140B3H1
IXGK28N140B3H1
IC110
O-247
IF110
28N140B3H1
11-29-10-B
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Untitled
Abstract: No abstract text available
Text: 2 1 3 4 2 1 Anti-Parallel APT2X30D100J 3 4 2 1 3 4 Parallel APT2X31D100J 7 22 TO S "UL Recognized" ISOTOP ® APT2X31D100J APT2X30D100J 1000V 1000V 28A 28A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT FEATURES PRODUCT APPLICATIONS
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APT2X30D100J
APT2X31D100J
OT-227
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C6B3
Abstract: 6B31 b 0743 2BA diode transistor k31 HFA45HC120C
Text: International E«g]Rectifier HEXFRED PD-2.375 Provisional Data Sheet HFA45HC120C ULTRA FAST, SOFT RECOVERY DIODE Features: Major Ratings and Characteristics Characteristics Vbr per leg 1200V, 28A Units 1200 V lF(AV) 28 A trr (pet leg> 135 ns Q rr (per leg)
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HFA45HC120C
00A//1s,
00A/jis,
O-258AA
C6B3
6B31
b 0743
2BA diode
transistor k31
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