AM01504v1
Abstract: GW50H60DF
Text: GW50H60DF 50 A, 600 V field stop trench gate IGBT with Ultrafast diode Preliminary data Features • Very high speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time ■ Ultrafast soft recovery antiparallel diode
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PDF
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STGW50H60DF
O-247
AM01504v1
GW50H60DF
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GW50H60DF
Abstract: GW50
Text: GW50H60DF 50 A, 600 V field stop trench gate IGBT with Ultrafast diode Features • High speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time ■ Ultrafast soft recovery antiparallel diode
|
Original
|
PDF
|
STGW50H60DF
O-247
GW50H60DF
GW50
|
Untitled
Abstract: No abstract text available
Text: GW50H60DF 50 A, 600 V field stop trench gate IGBT with Ultrafast diode Datasheet − production data Features • High speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time
|
Original
|
PDF
|
STGW50H60DF
O-247
|
GW50H60DF
Abstract: STGW50H60DF
Text: GW50H60DF 50 A, 600 V field stop trench gate IGBT with Ultrafast diode Features • Very high speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time ■ Ultrafast soft recovery antiparallel diode
|
Original
|
PDF
|
STGW50H60DF
O-247
GW50H60DF
STGW50H60DF
|
