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    DIODE 1N914 Search Results

    DIODE 1N914 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 1N914 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode cross reference 1n914

    Abstract: 1n914 str 50113 sa marking axial diode philips 1n914a marking diode axial
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914 High-speed diode Product specification Supersedes data of 1996 Sep 03 1999 May 26 Philips Semiconductors Product specification High-speed diode 1N914 FEATURES DESCRIPTION • Hermetically sealed leaded glass


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    PDF M3D176 1N914 DO-35) 1N914 MAM246 DO-35; SC-40) diode cross reference 1n914 str 50113 sa marking axial diode philips 1n914a marking diode axial

    SC4075

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914 High-speed diode Product specification Supersedes data of 1996 Sep 03 1999 May 26 Philips Semiconductors Product specification High-speed diode 1N914 FEATURES DESCRIPTION • Hermetically sealed leaded glass


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    PDF M3D176 1N914 DO-35) 1N914 MAM246 01-May-99) SC4075

    1N914

    Abstract: MAM246
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914 High-speed diode Product specification Supersedes data of 1996 Sep 03 1999 May 26 Philips Semiconductors Product specification High-speed diode 1N914 FEATURES DESCRIPTION • Hermetically sealed leaded glass


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    PDF M3D176 1N914 DO-35) 1N914 MAM246 115002/03/pp8 MAM246

    1N4148 krad

    Abstract: SMD ZENER DIODE 19v LM136A-2.5QML LM136-2.5
    Text: LM136A-2.5QML LM136A-2.5QML 2.5V Reference Diode Literature Number: SNOSAM3D LM136A-2.5QML 2.5V Reference Diode General Description Features The LM136A-2.5QML integrated circuit is a precision 2.5V shunt regulator diode. This monolithic IC voltage reference


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    PDF LM136A-2 1N4148 krad SMD ZENER DIODE 19v LM136A-2.5QML LM136-2.5

    1N4148WT

    Abstract: 1N4148WT RoHS 1N914BWT 1N4448WT 914W
    Text: 1N4148WT / 1N4448WT / 1N914BWT High Conductance Fast Switching Diode • • • • • • • Fast Switching Diode Trr <4.0nsec Flat Lead, Surface Mount Device under 0.70mm Height Extremely Small Outline Plastic Package SOD523F Moisture Level Sensitivity 1


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    PDF 1N4148WT 1N4448WT 1N914BWT OD523F 1N4148WT 1N4448WT OD-523F 1N4148WT RoHS 1N914BWT 914W

    Untitled

    Abstract: No abstract text available
    Text: 1N4148WT / 1N4448WT / 1N914BWT High Conductance Fast Switching Diode Features • • • • • • • Fast Switching Diode Trr <4.0nsec Flat Lead, Surface Mount Device Under 0.70mm Height Extremely Small Outline Plastic Package SOD523F Moisture Level Sensitivity 1


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    PDF 1N4148WT 1N4448WT 1N914BWT OD523F 1N4148WT 1N4448WT OD-523F 75lete

    diode 1n914

    Abstract: NX DIODE 1N914B 1N914 1N914A jedec do 35
    Text: Switching Diode 1N914/1N914A/1N914B Switching Diode Features • • • • Fast switching speed Electrically indentical to standard JEDEC High Conductance Axial lead package ideally suited for automatic insertion DO-35 Mechanical Data • • • • •


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    PDF 1N914/1N914A/1N914B DO-35 MIL-STD-202E, diode 1n914 NX DIODE 1N914B 1N914 1N914A jedec do 35

    DO-204AH

    Abstract: diode 1n914
    Text: 1N914 Vishay Semiconductors formerly General Semiconductor Small-Signal Diode DO-204AH DO-35 Glass Features • Silicon Epitaxial Planar Diode • For general purpose and switching Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.13g Packaging Codes/Options:


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    PDF 1N914 DO-204AH DO-35 F2/10K 50K/box F3/10K 50K/box 13-May-02 DO-204AH diode 1n914

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EPITAXIAL SWITCHING DIODE 1N914WS SOD-323 PLASTIC PCAKAGE Marking 1N914WS=WQ with cathode band Small Signal Diode ABSOLUTE MAXIMUM RATINGS Ta=25ºC DESCRIPTION


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    PDF 1N914WS OD-323 1N914WS C-120 Rev170507E

    1N9148

    Abstract: S3 marking DIODE marking code s1 SMD diode SOD-323F D10 SMD CODE MARKING smd diode S2 smd diode sod-323 marking code 500 1N4148WS Marking Code s3 diode smd diode code s3
    Text: 1N4148WS/1N4448WS/1N914BWS 200mW High Speed SMD Switching Diode Small Signal Diode SOD-323F B Features C A —Fast switching device Trr<4.0nS —Surface device type mounting D —Moisture sensitivity level 1 —Matte Tin(Sn) lead finish with Nickel(Ni) underplate


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    PDF 1N4148WS/1N4448WS/1N914BWS 200mW OD-323F OD-323 MIL-STD-202, 1N9148 S3 marking DIODE marking code s1 SMD diode SOD-323F D10 SMD CODE MARKING smd diode S2 smd diode sod-323 marking code 500 1N4148WS Marking Code s3 diode smd diode code s3

    S3 marking diode

    Abstract: SOD 323 diode 830 mm sod code marking code s1 SMD diode
    Text: 1N4148WS/1N4448WS/1N914BWS 200mW High Speed SMD Switching Diode Small Signal Diode SOD-323 B Features A C —Fast switching device Trr<4.0nS —Surface device type mounting D —Moisture sensitivity level 1 —Matte Tin(Sn) lead finish with Nickel(Ni) underplate


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    PDF 1N4148WS/1N4448WS/1N914BWS 200mW OD-323 OD-323F MIL-STD-202, C/10s S3 marking diode SOD 323 diode 830 mm sod code marking code s1 SMD diode

    Untitled

    Abstract: No abstract text available
    Text: 1N4148WS/1N4448WS/1N914BWS 200mW High Speed SMD Switching Diode Small Signal Diode SOD-323 B Features A C ­Fast switching device Trr<4.0nS ­Surface device type mounting D ­Moisture sensitivity level 1 ­Matte Tin(Sn) lead finish with Nickel(Ni) underplate


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    PDF 1N4148WS/1N4448WS/1N914BWS 200mW OD-323 MIL-STD-202, C/10s

    Q265

    Abstract: diode germanium 1n270 1N695 transitron matched diodes Q252 1N270 1N3066 transitron 1n648 S555G silicon diode and germanium
    Text: MATCHED DIODE QUADS Transitron's efficiency E R - 4 case epoxy encapsulated diode quads feature high silicon or germanium diodes with matched forward charac- teristics. Individual diodes allow the user maximum circuit configurations versatility. TABLE I SILICON DIODE TYPES


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    PDF 1N485B 1N648 1N914B 1N3066 1N3066 1N270 Q265 diode germanium 1n270 1N695 transitron matched diodes Q252 transitron 1n648 S555G silicon diode and germanium

    ts 4141

    Abstract: 1N914WS
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EPITAXIAL SWITCHING DIODE 1N914WS SOD-323 PLASTIC PCAKAGE Marking 1N914WS=WQ with cathode band Small Signal Diode ABSOLUTE MAXIMUM RATINGS Ta=25ºC DESCRIPTION


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    PDF 1N914WS OD-323 1N914WS C-120 Rev170507E ts 4141

    Untitled

    Abstract: No abstract text available
    Text: 1N4148/1N4448/1N914B 500mW High Speed Switching Diode Small Signal Diode DO-35 Axial Lead HERMETICALLY SEALED GLASS Features D C —Fast switching device Trr<4.0nS —Through-hole device type mounting A —Moisture sensitivity level 1 —Solder hot dip Tin(Sn) lead finish


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    PDF 1N4148/1N4448/1N914B 500mW DO-35 OD-27) C/10s

    1N4148 Fast Switching Diode

    Abstract: free 1N4148 1N4148 DO35 1n4148 w1 f12 diode
    Text: 1N4148/1N4448/1N914B 500mW High Speed Switching Diode Small Signal Diode DO-35 Axial Lead HERMETICALLY SEALED GLASS Features D C —Fast switching device Trr<4.0nS —Through-hole device type mounting A —Moisture sensitivity level 1 —Solder hot dip Tin(Sn) lead finish


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    PDF 1N4148/1N4448/1N914B 500mW DO-35 OD-27) C/10s 1N4148 Fast Switching Diode free 1N4148 1N4148 DO35 1n4148 w1 f12 diode

    1N4148, SOD-27

    Abstract: 1n914B free 1N4148 1N4148 sod27 1N4148
    Text: 1N4148/1N4448/1N914B 500mW High Speed Switching Diode Small Signal Diode DO-35 Axial Lead HERMETICALLY SEALED GLASS Features D C —Fast switching device Trr<4.0nS —Through-hole device type mounting A —Moisture sensitivity level 1 —Solder hot dip Tin(Sn) lead finish


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    PDF 1N4148/1N4448/1N914B 500mW DO-35 OD-27) C/10s 1N4148, SOD-27 1n914B free 1N4148 1N4148 sod27 1N4148

    1N9148

    Abstract: 1N9148B MARKING CODE diode sod123 W1 1N4148W SOD123 D3 w1 marking SOD 123 1N4148W/1N4448W/1N914BW
    Text: 1N4148W/1N4448W/1N914BW 400mW High Speed SMD Switching Diode Small Signal Diode SOD-123 B Features C A —Fast switching device T rr<4.0nS —Surface device type mounting D —Moisture sensitivity level 1 —Matte Tin(Sn) lead finish with Nickel(Ni) underplate


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    PDF 1N4148W/1N4448W/1N914BW 400mW OD-123 OD-123 MIL-STD-202, C/10s 1N9148 1N9148B MARKING CODE diode sod123 W1 1N4148W SOD123 D3 w1 marking SOD 123

    DIODE MARK 35

    Abstract: 1N914
    Text: 1N914 SMALL SIGNAL DIODE FEATURES DO-35 min. 1.083 27.5 ♦ For general purpose and switching. max. ∅.079 (2.0) Cathode Mark min. 1.083 (27.5) max. .150 (3.8) ♦ Silicon Epitaxial Planar Diode MECHANICAL DATA Case: DO-35 Glass Case Weight: approx. 0.13 g


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    PDF 1N914 DO-35 DO-35 DIODE MARK 35 1N914

    Untitled

    Abstract: No abstract text available
    Text: 1N4148W/1N4448W/1N914BW 400mW High Speed SMD Switching Diode Small Signal Diode SOD-123 B Features C A ­Fast switching device T rr<4.0nS ­Surface device type mounting D ­Moisture sensitivity level 1 ­Matte Tin(Sn) lead finish with Nickel(Ni) underplate


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    PDF 1N4148W/1N4448W/1N914BW 400mW OD-123 OD-123

    diode 1N914B

    Abstract: 1N914B
    Text: Formosa MS Switching Diode 1N914B List List. 1 Package outline. 2 Features. 2


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    PDF 1N914B MIL-STD-750D METHOD-1051 125oC METHOD-1056 METHOD-4066-2 1000hrs. diode 1N914B 1N914B

    bc 7-25 pnp

    Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
    Text: DISCRETE SEMICONDUCTORS INDEX AND CROSS REFERENCE Industry Number Type Allegro Number s Allegro Package 1 Pinning 2 3 Ratings (Page) 1N914 Diode TMPD914 TO-236AB A NC K 7-29 1N4148 Diode TMPD4148 TO-236AB A NC K 7-29 1N4150 Diode TM PD4150 TO-236AB A NC K


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    PDF 1N914 1N4148 1N4150 1N4565 1N4565A 1N4566 1N4566A 1N4570 1N4570A 1N4571 bc 7-25 pnp transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor

    bc 7-25 pnp

    Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
    Text: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30


    OCR Scan
    PDF 1N914 1N4148 1N4150 1N5229 1N5230 1N5231 1N5232 1N5233 1N5234 1N5235 bc 7-25 pnp transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA

    Untitled

    Abstract: No abstract text available
    Text: 1N914 SMALL SIGNAL DIODE DO-35 _ FEATURES_ ♦ Silicon Epitaxial Planar Diode ♦ For general purpose and switching. max. 0.079 2.0 -C a tho d e Mark _MECHANICAL DATA Case: DO-35 Glass Case Weight: approx. 0.13 g .max. 0.020 (0.52)


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    PDF 1N914 DO-35 DO-35 25RICAL