Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diode 1N5711W SCHOTTKY DIODE SOD-123 Features 1.05 • · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance
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OD-123
1N5711W
OD-123
1N5711W
020REF
500REF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode 1N5711WS SCHOTTKY DIODE SOD-323 Features 1.00 1.70 Marking: 1N5711WS:SA 0.30 • · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time
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OD-323
1N5711WS
OD-323
1N5711WS
019REF
475REF
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marking A2 diode SOD 123
Abstract: sod123 diode marking e1 sod123 diode marking A2 diode marking A2 sod123 1N5711W SOD123 Package diode e1 marking L1 sod123
Text: SOD-123 Plastic-Encapsulate Diode 1N5711W SCHOTTKY DIODE SOD-123 Features 1.05 • · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion
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OD-123
1N5711W
OD-123
1N5711W
020REF
500REF
marking A2 diode SOD 123
sod123 diode marking e1
sod123 diode marking A2
diode marking A2 sod123
SOD123 Package diode e1
marking L1 sod123
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1N5711WS
Abstract: No abstract text available
Text: SOD-323 Plastic-Encapsulate Diode 1N5711WS SCHOTTKY DIODE SOD-323 Features 1.00 1.70 Marking: 1N5711WS:SA 0.30 • · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for
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OD-323
1N5711WS
OD-323
1N5711WS
019REF
475REF
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1N5711UB
Abstract: No abstract text available
Text: 1N5711UB and 1N5712UB CC, CA, & D Qualified Levels: JAN, JANTX, JANTXV and JANS Schottky Barrier Diode Ceramic Surface Mount Compliant Qualified per MIL-PRF-19500/444 DESCRIPTION This 1N5711UB and 1N5712UB Schottky barrier diode is ceramic encased and offers military
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1N5711UB
1N5712UB
MIL-PRF-19500/444
1N5712UB
1N5711,
1N5712
MIL-PRF-19500/444
T4-LDS-0040-2,
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1n5711
Abstract: No abstract text available
Text: Schottky Diodes 1N5711 Series DESCRIPTION The 1N5711 is a Schottky diode designed with a metalized guard ring to achieve a high voltage breakdown. Features • RoHS Compliant • High voltage breakdown • UHF/VHF detection/pulse applications • Diode matching available
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1N5711
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Untitled
Abstract: No abstract text available
Text: Schottky Diodes 1N5711 Series DESCRIPTION The 1N5711 is a Schottky diode designed with a metalized guard ring to achieve a high voltage breakdown. Features • RoHS Compliant • High voltage breakdown • UHF/VHF detection/pulse applications • Diode matching available
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1N5711
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1N5711
Abstract: No abstract text available
Text: 1N5711 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range. Matched batches are available on request
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1N5711
DO-35
1N5711
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1N5711
Abstract: UHF DO-35
Text: 1N5711 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range. Matched batches are available on request
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1N5711
DO-35
1N5711
UHF DO-35
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Untitled
Abstract: No abstract text available
Text: 1N5711-1, 1N5712-1, 1N6857-1, and 1N6858-1; DSB2810 and DSB5712 Qualified Levels: JAN, JANTX, and JANTXV Schottky Barrier Diode Available on commercial versions Qualified per MIL-PRF-19500/444 DESCRIPTION This Schottky barrier diode is metallurgically bonded and offers military grade qualifications
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1N5711-1,
1N5712-1,
1N6857-1,
1N6858-1;
DSB2810
DSB5712
MIL-PRF-19500/444
DO-35
DO-35
DO-204AH)
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1N5711UB
Abstract: No abstract text available
Text: 1N5711UR-1, 1N5712UR-1, 1N6857UR-1, and 1N6858UR-1 plus CDLL equivalents Qualified Levels: JAN, JANTX, and JANTXV Schottky Barrier Diode MELF Surface Mount Available on commercial versions Qualified per MIL-PRF-19500/444 DESCRIPTION This Schottky barrier diode is metallurgically bonded and offers military grade qualifications
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1N5711UR-1,
1N5712UR-1,
1N6857UR-1,
1N6858UR-1
MIL-PRF-19500/444
DO-213AA
DO-213AA
1N5711UB
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5082-2804
Abstract: 5082-2805 1N5712 5082-2080 2800-Series 5082-2826 5082-XXXX 5082-2811 1N5711 RS-296-D
Text: Products > RF ICs/Discretes > Schottky Diodes > Axial Glass Packaged > 5082-2835 5082-2835 General purpose Schottky diode All Detail Documents Description Lifecycle status: Active Features The 5082-2835 is a passivated Schottky diode in a low cost glass package. It is optimised for
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340mV.
1N5711,
1N5712,
5082-xxxx
5082xxxx
1N5712
5082-28xx
T25/1N57xx
5082-2804
5082-2805
1N5712
5082-2080
2800-Series
5082-2826
5082-XXXX
5082-2811
1N5711
RS-296-D
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2N2369 avalanche
Abstract: 2N2369 transistor pulse generator 2N2369 AVALANCHE PULSE GENERATOR Tektronix P6056 2N2501 MOTOROLA P-6056 CTX-02-16004 motorola transistor handbook 2N3866 application note crystal generator 1GHz
Text: Application Note 122 January 2009 Diode Turn-On Time Induced Failures in Switching Regulators Never Has so Much Trouble Been Had By so Many with so Few Terminals Jim Williams David Beebe Introduction A potential difficulty due to diode turn-on time is that
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AN122
350ps
an122f
AN122-19
AN122-20
2N2369 avalanche
2N2369 transistor pulse generator
2N2369 AVALANCHE PULSE GENERATOR
Tektronix P6056
2N2501 MOTOROLA
P-6056
CTX-02-16004
motorola transistor handbook
2N3866 application note
crystal generator 1GHz
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1n5711w-7-f
Abstract: 1N5711W
Text: 1N5711W SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • • • • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion
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1N5711W
OD-123
DS11015
1n5711w-7-f
1N5711W
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1N5712 spice
Abstract: 1N5711 spice 1N5712 1N5711 5082-2804 2800-Series 5082-2811 RS-296-D
Text: Products > RF ICs/Discretes > Schottky Diodes > Axial Glass Packaged > 1N5711 1N5711 Low 1/f noise general purpose Schottky diode Description Lifecycle status: Active Features The 1N5711 and 1N5712 are passivated Schottky barrier diodes which use a patented
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1N5711
1N5711
1N5712
1N5711,
1N5712,
5082-xxxx
5082xxxx
1N5712 spice
1N5711 spice
5082-2804
2800-Series
5082-2811
RS-296-D
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1N5711WS
Abstract: 1N5711WS-7 J-STD-020A
Text: 1N5711WS SURFACE MOUNT SCHOTTKY BARRIER DIODE SPICE MODEL: 1N5711WS Features • · · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Speed Low Capacitance Surface Mount Package Ideally Suited for Automatic Insertion
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1N5711WS
OD-323
OD-323,
J-STD-020A
MIL-STD-202,
DS31033
1N5711WS
1N5711WS-7
J-STD-020A
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Germanium diode
Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
Text: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes
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1N34A
1N38A
1N60A
1N100A
1N270
1N276
1N277
1N456
1N459
1N456A
Germanium diode
5 amp diode rectifiers
Germanium Diode OA91
aa117 diode
diode
2 Amp rectifier diode
2 Amp zener diode
DIODE 1N649
germanium rectifier diode
OA95 diode
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Untitled
Abstract: No abstract text available
Text: 1N5711 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high break down, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range. Matched batches are available on request.
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1N5711
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1N5711
Abstract: No abstract text available
Text: 1N5711 asii SCHOTTKY BARRIER DIODE DESCRIPTION: PACKAGE STYLE DO-35 The 1N5711 is a Silicon Small Signal Schottky Diode for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode. MAXIMUM RATINGS If 15 mA Vr 70 V Pd i s s 250 mW @ Ta = 25 0C
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1N5711
1N5711
DO-35
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Untitled
Abstract: No abstract text available
Text: 1N5711 asi SCHOTTKY BARRIER DIODE DESCRIPTION: The 1N5711 is a Silicon Small Signal Schottky Diode for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode. MAXIMUM RATINGS If 15 mA Vr 70 V P diss 250 mW @ Ta = 25 °C Tj -65 °C to +200 °C
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1N5711
1N5711
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bc 7-25 pnp
Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
Text: DISCRETE SEMICONDUCTORS INDEX AND CROSS REFERENCE Industry Number Type Allegro Number s Allegro Package 1 Pinning 2 3 Ratings (Page) 1N914 Diode TMPD914 TO-236AB A NC K 7-29 1N4148 Diode TMPD4148 TO-236AB A NC K 7-29 1N4150 Diode TM PD4150 TO-236AB A NC K
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1N914
1N4148
1N4150
1N4565
1N4565A
1N4566
1N4566A
1N4570
1N4570A
1N4571
bc 7-25 pnp
transistor bc 7-25
transistor 724
731 zener diode
transistor B 722
transistor Bc 2n2222
transistor BC 176
MPS6521
transistor 2N5952
TP2222A transistor
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bc 7-25 pnp
Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
Text: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30
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1N914
1N4148
1N4150
1N5229
1N5230
1N5231
1N5232
1N5233
1N5234
1N5235
bc 7-25 pnp
transistor bc 7-25
2N5245 transistor
2n3819 cross reference
TO-266AA
2N3904 731
jFET Array
BFR30 "cross reference"
2N5308 cross reference
266AA
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A2 zener diode
Abstract: diode ZENER A1 to-226aa to226aa ZENER DIODE 1n5240 DIODE 827 ZENER 1N5242 1N414* zener 2n2222 transistor pin b c e ZENER 1n5232
Text: DISCRETE SEMICONDUCTORS I N D E X A N D C R O S S REFERENCE Industry Number Type Allegro Number s Allegro Package TO-236AB TO-236AB TO-236AB 1N914 Diode TMPD914 1N4148 1N5230 1N5231 1N5232 Diode Zener Zener Zener TMPD4148 TMPZ5230 TMPZ5231 TMPZ5232 1N5234
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1N914
1N4148
1N5230
1N5231
1N5232
1N5234
1N5236
1N5237
1N5239
1N5240
A2 zener diode
diode ZENER A1
to-226aa
to226aa
ZENER DIODE 1n5240
DIODE 827
ZENER 1N5242
1N414* zener
2n2222 transistor pin b c e
ZENER 1n5232
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Untitled
Abstract: No abstract text available
Text: NOIlVWaOdNI 30NVAQV 1N5711WS SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion He h □
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30NVAQV
1N5711WS
OD-323
OD-323,
MIL-STD-202,
DS31033
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