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    DIODE 1N5614 Search Results

    DIODE 1N5614 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 1N5614 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N5622

    Abstract: 1N5614 microsemi 1n5620 1N5614 JANTX 1N5614US 1N5616 1N5618 1N5620 1N5622US 1N5614 MICROSEMI
    Text: 1N5614 thru 1N5622 VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “standard recovery” rectifier diode series is military qualified to MIL-PRF19500/427 and is ideal for high-reliability applications where a failure cannot be


    Original     		PDF 1N5614 1N5622 MIL-PRF19500/427 1N5614US 1N5622US) 1N5614 1N5622 microsemi 1n5620 1N5614 JANTX 1N5616 1N5618 1N5620 1N5622US 1N5614 MICROSEMI

    diode 1N5614

    Abstract: 1N5614 MICROSEMI microsemi 1n5620
    Text: 1N5614 thru 1N5622 VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “standard recovery” rectifier diode series is military qualified to MIL-PRF19500/427 and is ideal for high-reliability applications where a failure cannot be


    Original     		PDF 1N5614 1N5622 MIL-PRF19500/427 1N5614US 1N5622US) 1N5614 1N5622 diode 1N5614 1N5614 MICROSEMI microsemi 1n5620

    Untitled

    Abstract: No abstract text available
    Text: 1N5614 thru 1N5622 VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARAN CE This “standard recovery” rectifier diode series is military qualified to MIL-PRF19500/427 and is ideal for high-reliability applications where a failure cannot be


    Original     		PDF 1N5614 1N5622 MIL-PRF19500/427 1N5614US 1N5622US) 1N5614

    Untitled

    Abstract: No abstract text available
    Text: 1N5614US thru 1N5622US VOIDLESS-HERMETICALLY-SEALED SURFACE MOUNT STANDARD RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “standard recovery” surface mount rectifier diode series is military qualified to MILPRF-19500/427 and is ideal for high-reliability applications where a failure cannot be


    Original     		PDF 1N5614US 1N5622US MILPRF-19500/427 1N5614 1N5622) 1N5614US

    1N5622 JANTXV

    Abstract: No abstract text available
    Text: 1N5614US thru 1N5622US VOIDLESS-HERMETICALLY-SEALED SURFACE MOUNT STANDARD RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “standard recovery” surface mount rectifier diode series is military qualified to MIL-PRF-19500/427 and is ideal for high-reliability applications where a failure


    Original     		PDF 1N5614US 1N5622US MIL-PRF-19500/427 1N5614 1N5622) 1N5614US 1N5622US 1N5622 JANTXV

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 1N5614 – 1N5622 DIODE STANDARD RECOVERY RECTIFIER 2.0A, 200-1000V MAXIMUM RATINGS Rating Value Thermal resistance 38°C/W junction to lead at 3/8” lead length from body Thermal impedance 4.5°C/W @ 10ms heating time Average rectified forward current


    Original     		PDF 1N5614 1N5622 00-1000V MIL-PRF-19500,

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    1N4245

    Abstract: JANTX 1N4249 1N4246 1N4249 1N5614 1N5614US 1N5622 1N5622US JAN 1N4249 Microsemi micronote series 050
    Text: 1N4245 thru 1N4249 VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “standard recovery” rectifier diode series is military qualified to MIL-PRF19500/286 and is ideal for high-reliability applications where a failure cannot be


    Original     		PDF 1N4245 1N4249 MIL-PRF19500/286 1N5614 1N5622 1N5614US 1N5622US) JANTX 1N4249 1N4246 1N4249 1N5622US JAN 1N4249 Microsemi micronote series 050

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original     		PDF MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent

    1N3611

    Abstract: JAN1N3613 1N3957 melf diode, square 1N3597 1N3614 Microsemi micronote series 050 JANTX 1N3611 microsemi marking 1n3 1N5614
    Text: 1N3611 thru 1N3614, 1N3957 VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “standard recovery” rectifier diode series is military qualified to MIL-PRF19500/228 and is ideal for high-reliability applications where a failure cannot be


    Original     		PDF 1N3611 1N3614, 1N3957 MIL-PRF19500/228 1N5614 1N5622 1N5614US 1N5622US) JAN1N3613 1N3957 melf diode, square 1N3597 1N3614 Microsemi micronote series 050 JANTX 1N3611 microsemi marking 1n3

    1N3613

    Abstract: 1N3611 1N3612 1N3614 1N3957 1N5614 1N5616 1N5618 1N5620 JANTX 1N3613
    Text: INCH POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 17 May 2010. MIL-PRF-19500/228N 16 February 2010 SUPERSEDING MIL-PRF-19500/228M 31 October 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER,


    Original     		PDF MIL-PRF-19500/228N MIL-PRF-19500/228M 1N3611, 1N3612, 1N3613, 1N3614, 1N3957, 1N5614, 1N5616, 1N5618, 1N3613 1N3611 1N3612 1N3614 1N3957 1N5614 1N5616 1N5618 1N5620 JANTX 1N3613

    diode 1N4383

    Abstract: 1N5618US JANTXV JANTX, JX, JAN 1N5614 1N5614US 1N5616 1N5616US 1N5618 1N5618US 1N5620
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 March 2009. MIL-PRF-19500/427M 18 February 2009 SUPERSEDING MIL-PRF-19500/427L 15 October 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,


    Original     		PDF MIL-PRF-19500/427M MIL-PRF-19500/427L 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, 1N5614US, 1N5616US, 1N5618US, diode 1N4383 1N5618US JANTXV JANTX, JX, JAN 1N5614 1N5614US 1N5616 1N5616US 1N5618 1N5618US 1N5620

    marking Eg1

    Abstract: 286E JANTX 1N4249 1N4245 1N4249 1N5614 1N5616 1N5618 1N5620 1N5622
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 3 January 2003. MIL-PRF-19500/286F 3 October 2002 SUPERSEDING MIL-S-19500/286E 27 July 1994 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER


    Original     		PDF MIL-PRF-19500/286F MIL-S-19500/286E 1N4245 1N4249, 1N4245EG1 1N4249EG1, 1N5614, 1N5616, 1N5618, 1N5620, marking Eg1 286E JANTX 1N4249 1N4249 1N5614 1N5616 1N5618 1N5620 1N5622

    PK MUR 460

    Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
    Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


    Original     		PDF MBR340 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 PK MUR 460 pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360

    1N3611

    Abstract: No abstract text available
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 26 July 2013. INCH-POUND MIL-PRF-19500/228R 26 April 2013 SUPERSEDING MIL-PRF-19500/228P 26 October 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER,


    Original     		PDF MIL-PRF-19500/228R MIL-PRF-19500/228P 1N3611, 1N3612, 1N3613, 1N3614, 1N3957, 1N5614, 1N5616, 1N5618, 1N3611

    Germanium diode

    Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
    Text: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes


    OCR Scan     		PDF 1N34A 1N38A 1N60A 1N100A 1N270 1N276 1N277 1N456 1N459 1N456A Germanium diode 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode

    1N1743

    Abstract: IN5234 IN5008 1N4202 zener diode 1N PH 48 diode 1n1418 1NS232 zener diode c51 ph 1n587 1N4465
    Text: ZENER DIODE/RECTIFIER CROSS REFERENCE CHART Containing all JE D E C registered Zener diodes. This popular reference chart contains highlight information on all JE D E C registered Zener diode and rectifier types as well as Microsemi types. The following Codes are used:


    OCR Scan     		PDF 1N225 1N2260) 1N227 1N228 1N229 1N230O) 1N231d) 1N232 BZX83 BZX97 1N1743 IN5234 IN5008 1N4202 zener diode 1N PH 48 diode 1n1418 1NS232 zener diode c51 ph 1n587 1N4465

    S2M diode

    Abstract: diode S6M diode s2m IN5622 1N5614 JANTX IN5618 DIODE in5616 1N5614 1N5616 1N5618
    Text: SEHTECH CORP SfiE D 1N5614 1N5616 1N5618 S2M S4M S6M 1N5622 SOM • 013^13^ OODBbSO ATS * S E T STANDARD RECOVERY QUICK REFERENCE AXIALLEADED HERMETICALLY SEALED DATA STANDARD RECOVERY RECTIFIER DIODE • Vr • If • trr • Vf = 200 - 1000V = 2.0A = 2 i.S


    OCR Scan     		PDF 1N5614 1N5616 1N5618 1N5620 1N5622 DS-047 S2M diode diode S6M diode s2m IN5622 1N5614 JANTX IN5618 DIODE in5616

    X200SG

    Abstract: Z100SG 1N6521U
    Text: QUICK SELECTION GUIDE Part No. Vrwm Volts l°(A) (55°C) Trr (ns) DISCRETE RECTIFIER DIODE 1N5415 50 5.000 150 150 1N5416 100 5.000 1N5615 200 1.500 150 1N5614 200 1.500 2000 1N5417 200 5.000 150 1N5550 200 5.000 2000 1N5617 1.500 150 400 1N5616 400 1.500 2000


    OCR Scan     		PDF M50FF3 M50FF5 1N6533 M50UFG M50FG M50SG X50FF3 X50FF5 1N6525 X50UFG X200SG Z100SG 1N6521U

    JAN1N5618

    Abstract: N5618 1N5614 1N5616 1N5620 1N5622 394II JAN1N5620 JAN1N5616
    Text: 1N5614 thru 1N5622 Microsemi Corp. ' The diode experts ☆JA N S* SANTA A N A , CA F o r m o r e i n f o r m a ti o n call: 714 9 7 9 -8 2 2 0 FE A TU R E S MILITARY RECTIFIERS • M ICRO M INIATURE PACKAGE • VO IDLESS HERMETICALLY SEALED G LA SS PACKAGE


    OCR Scan     		PDF 1N5614 1N5622 MIL-S-19500/427 JAN1N5618 N5618 1N5616 1N5620 1N5622 394II JAN1N5620 JAN1N5616

    12v 15a diode

    Abstract: 12v diode 10A
    Text: mitron Devices. Inc. MEDIUM TO HIGH VOLTAGE CHIP NUMBER PISI EPITAXIAL PLANAR POWER DIODE CONTACT METALLIZATION Anode: > 30,000 A Aluminum Cathode: Gold Polished silicon or "Chrome Nickel Silver" also available Also available on: MOLY PEDESTAL Size: .140" Diameter (3.56mm)


    OCR Scan     		PDF 203mm) 1N5614, 1N5615. 1N5616 C-120 12v 15a diode 12v diode 10A

    12v 15a diode

    Abstract: Diode 400V 1.5A 1N5614 1N5615 1N5616 15A100
    Text: ^ÆlitraiI ä¥M, Devices, Inc. MEDIUM TO HIGH VOLTAGE CHIP NUMBER PN EPITAXIAL PLANAR POWER DIODE CONTACT METALLIZATION A Anode: > 30,000 Aluminum Cathode: Gold (Polished silicon or "Chrome Nickel Silver'' also available Also available on: MOLY PEDESTAL


    OCR Scan     		PDF 203mm) 1N5614, 1N5615, 1N5616 C-120 12v 15a diode Diode 400V 1.5A 1N5614 1N5615 15A100