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    DIODE 1N4946 Search Results

    DIODE 1N4946 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 1N4946 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Germanium diode

    Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
    Text: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes


    OCR Scan     		1N34A 1N38A 1N60A 1N100A 1N270 1N276 1N277 1N456 1N459 1N456A Germanium diode 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode PDF

    1N4943

    Abstract: 1N4945 1N4942 1N4944 1N4946 1N4947 1N4948 DS021 DS-021
    Text: 07 î ïf|s:L3ci:L3c] DDDIVTB 2 813 913 9 SEMTECH CORP 07E 01793 1N4942 1N4943 1N4944 1N4945 1N4946 1N4947 1N4948 FAST RECOVERY QUICK REFERENCE DATA AXIAL LEADED HERMETICALLY SEALED FAST RECTIFIER DIODE ° ° • • D T -Ù $ ~ I5 • Vr = 200 - 1000V .


    OCR Scan     		1N4942 1N4944 1N4946 1N4943 1N4945 1N4947 1N4948 500nS 1N49421N4943 1N494411H4945 1N4946 1N4947 1N4948 DS021 DS-021 PDF

    DI108S

    Abstract: SK5100 CP2506 sb5200 SB840
    Text: Diode & Rectifiers Diode & Rectifiers MERITEK RoHS TABLE OF CONTENT • PLASTIC PASSIVATED JUNCTION RECTIFIER o General Purpose


    Original     		38x45Â DI108S SK5100 CP2506 sb5200 SB840 PDF

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45 PDF

    Diode 1N4946

    Abstract: 1N4946
    Text: 1N4942,1N4944,1N4946 thru 1N4948 Standard 1A F AST RECOVERY DIODE SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5109, REV. A AV AI L AB L E AS 1 N , J AN , J AN T X , J ANT XV


    Original     		1N4942 1N4944 1N4946 1N4948 MIL-PRF-19500/359 MIL-PRF-19500/359 Diode 1N4946 PDF

    4942

    Abstract: 1N4942
    Text: 1N4942,1N4944,1N4946 thru 1N4948 Standard 1A F AST RECOVERY DIODE SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5109, REV. A AV AI L AB L E AS 1 N , J AN , J AN T X , J ANT XV


    Original     		1N4942 1N4944 1N4946 1N4948 MIL-PRF-19500/359 4942 PDF

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50 PDF

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount PDF

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original     		MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent PDF

    PK MUR 460

    Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
    Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


    Original     		MBR340 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 PK MUR 460 pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360 PDF

    Untitled

    Abstract: No abstract text available
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 3 February 2007. MIL-PRF-19500/359G 3 November 2006 SUPERSEDING MIL-PRF-19500/359F 22 March 2002 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, POWER RECTIFIER,


    Original     		MIL-PRF-19500/359G MIL-PRF-19500/359F 1N4942, 1N4944, 1N4946, 1N4947, 1N4948, 1N5615, 1N5617, 1N5619, PDF

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502 PDF

    SHARP IR3

    Abstract: 1N4942 1N4944 1N4946 1N4947 1N4948 1N5615 1N5617 1N5619 1N5621
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 22 June 2002 . MIL-PRF-19500/359F 22 March 2002 SUPERSEDING MIL-PRF-19500/359E 16 August 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, POWER RECTIFIER,


    Original     		MIL-PRF-19500/359F MIL-PRF-19500/359E 1N4942, 1N4944, 1N4946, 1N4947, 1N4948 1N5615, 1N5617, 1N5619 SHARP IR3 1N4942 1N4944 1N4946 1N4947 1N4948 1N5615 1N5617 1N5621 PDF

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode PDF

    GP25D

    Abstract: RGP15G diode rgp10j diode diode rgp10g diode RGP30G diode rgp10a P25M
    Text: GLASS PASSIVATED FAST RECOVERY SILICON SUPER DIODE typ e PIV Peak inverse V o lta g e M AX AVG R e c tifie d C urre n t H a lfW a ve Res. Load 60Hz IO "> TA VPK AA V MAX FWD Peak M A X Reverse S urge C urre n t C urre n t 1 60H Z i " PIV V o lta ge S up erim p ose d


    OCR Scan     		DO-41 RGP10A RGP10B RGP10D RGP10G RGP10J RGP10K RGP10M RECOVERY/DO-201AD RGP25A GP25D RGP15G diode rgp10j diode diode rgp10g diode RGP30G diode rgp10a P25M PDF

    1N4942

    Abstract: 1N4942-1N4948 1N4944 1N4946 1N4947 1N4948
    Text: LESHAN RADIO COMPANY, LTD. 1N4942 – 1N4948 FAST GPP DIODES TYPE Maximum Peak Reverse Voltage Maximum Average Maximum Rectified Current Forward Peak @ Half-Wave Surge Current @ Resistive Load 60Hz 8.3ms Superimposed PRV I O@ T L V PK 1N4942 1N4944 1N4946


    Original     		1N4942 1N4948 1N4944 1N4946 1N4947 1N4942 1N4942-1N4948 1N4944 1N4946 1N4947 1N4948 PDF

    12V PIV RATING DIODE

    Abstract: 1N4942 1N4944 1N4946
    Text: JAN, JANTX, & JANTXV 1N4942 JAN, JANTX, & JANTXV 1N4944 JAN, JANTX, & JANTXV 1N4946 RECTIFIERS Military Approved, 1 Amp, Fast Recovery FEATURES D E SCRIPTIO N • Q ualified to M lL-S-19500/359 • Surge Rating: 15A • P!V: to 600V These fa s t recovery rectifiers are su ita b le


    OCR Scan     		1N4942 1N4944 1N4946 MlL-S-19500/359 1N494Ã 12V PIV RATING DIODE PDF

    IN5008

    Abstract: 1N5008 diode 1n5008 IN5009 1N5019 1N4994 1N5022 1N4956 1N5009 IN4992
    Text: PIV lo 25°C VF IR Volts Amps Volts mA Type No. 1N4938-1 1N4942 1N4944 1N4946 1N4947 1N4948 Zener Type No. .1 55QC A 1.0 200 1.0 400 600 1.0 800 1.0 1.0 1000 2ener foltage 3t IzT Volts @ mA 200 1N4954 1N4955 1N4956 6.8 7.5 8.2 1N4957 1N4958 1N4959 9.1 10.0


    OCR Scan     		1N4938-1 1N4942 1N4944 IN4946 1N4947 1N4948 1N4954 1N4955 1N4956 1N4957 IN5008 1N5008 diode 1n5008 IN5009 1N5019 1N4994 1N5022 1N5009 IN4992 PDF

    Diode 1N4947

    Abstract: 1N4946 3SF05 Diode 1N4946 DIODE S2F 1N542 1N4948 JTX
    Text: FAST RECOVERY RECTIFIER DIODES < 1000V cont I(AV) nominal (Amps) OUTLINE DRAWING VRWM 1.7A-2.5A G88 G2 2.6A-4.5A G2 G83 G83 G4 (V) 50V 100V 1N4942 200V 1N4943 400V 1N4944 500V 1N4945 600V 1N4946 800V PF8 1N4947 1000V PFO F/FX 1N4948 trr (nS) 300 150-500


    Original     		1N4942 1N4943 1N4944 1N5615 1N5617 1N4945 1N4946 1N4947 1N4948 1N5619 Diode 1N4947 1N4946 3SF05 Diode 1N4946 DIODE S2F 1N542 1N4948 JTX PDF

    1N4946

    Abstract: No abstract text available
    Text: 1N4942 – 1N4946 Qualified Levels: JAN, JANTX, and JANTXV Voidless Hermetically Sealed Fast Recovery Glass Rectifiers Available on commercial versions Qualified per MIL-PRF-19500/359 DESCRIPTION This Series of industry recognized voidless, hermetically sealed Fast recovery glass rectifiers


    Original     		1N4942 1N4946 MIL-PRF-19500/359 MIL-PRF-19500/359 1N5615 1N5619 T4-LDS-0295, 1N4946 PDF

    1N4942 avalanche

    Abstract: 1N4946
    Text: 1N4942 – 1N4946 Qualified Levels: JAN, JANTX, and JANTXV Voidless Hermetically Sealed Fast Recovery Glass Rectifiers Available on commercial versions Qualified per MIL-PRF-19500/359 DESCRIPTION This Series of industry recognized voidless, hermetically sealed fast recovery glass rectifiers


    Original     		1N4942 1N4946 MIL-PRF-19500/359 MIL-PRF-19500/359 1N5615 1N5619 T4-LDS-0295, 1N4942 avalanche 1N4946 PDF

    IN5008

    Abstract: DIODE 1N5008 IN4992 Diode 1N4947 1N4938-1 1N4942 1N4944 1N4947 1N4948 1N4954
    Text: PIV lo 25°C VF IR Volts Amps Volts mA Type No. 1N4938-1 1N4942 1N4944 1N4946 1N4947 1N4948 Zener Type No. .1 55QC A 1.0 200 1.0 400 600 1.0 800 1.0 1.0 1000 2ener foltage 3t IzT Volts @ mA 200 1N4954 1N4955 1N4956 6.8 7.5 8.2 1N4957 1N4958 1N4959 9.1 10.0


    OCR Scan     		1N4938-1 1N4942 1N4944 IN4946 1N4947 1N4948 1N4954 1N4955 1N4956 1N4957 IN5008 DIODE 1N5008 IN4992 Diode 1N4947 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N4942GP, 1N4944GP, 1N4946GP, 1N4947GP, 1N4948GP www.vishay.com Vishay General Semiconductor Glass Passivated Junction Fast Switching Plastic Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction


    Original     		1N4942GP, 1N4944GP, 1N4946GP, 1N4947GP, 1N4948GP 22-B106 AEC-Q101 DO-204AL DO-41) 2002/95/EC. PDF

    IN5008

    Abstract: 1N5008 1N5022 1N5009 IN4992 1N4938-1 1N4942 1N4944 1N4947 1N4948
    Text: PIV lo 25°C VF IR Volts Amps Volts mA Type No. 1N4938-1 1N4942 1N4944 1N4946 1N4947 1N4948 Zener Type No. .1 55QC A 1.0 200 1.0 400 600 1.0 800 1.0 1.0 1000 2ener foltage 3t IzT Volts @ mA 200 1N4954 1N4955 1N4956 6.8 7.5 8.2 1N4957 1N4958 1N4959 9.1 10.0


    OCR Scan     		1N4938-1 1N4942 1N4944 IN4946 1N4947 1N4948 1N4954 1N4955 1N4956 1N4957 IN5008 1N5008 1N5022 1N5009 IN4992 PDF