Untitled
Abstract: No abstract text available
Text: 1N4152 Small Signal Switching Diode. Peak Reverse Voltage VRM = 40 V. Maximum . Page 1 of 1 Enter Your Part # Home Part Number: 1N4152 Online Store 1N4152 Diodes Small Signal Switching Diode. Peak Reverse Voltage VRM Transistors = 40 V. Maximum Average Rectified Current IAV = 150 MA.
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1N4152
1N4152
DO-35
com/1n4152
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1N4149
Abstract: 1N4150 1N4152 1N4153 1N4447 1N4449 1N4454 1N914
Text: CE 1N914 THRU 1N4454 CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE FEATURES . Silicon epitaxial planar diode . Fast swithching diodes . 1N4149, 1N4447, 1N4449 are also avaible in glass case DO-34 MECHANICAL DATA . Case: DO-35 glass case . Polarity: Color brand denotes cathode end
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1N914
1N4454
1N4149,
1N4447,
1N4449
DO-34
DO-35
13gram
1N4450
1N4451
1N4149
1N4150
1N4152
1N4153
1N4447
1N4454
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1N4152
Abstract: DO-204AH Diode 1n4152
Text: Certificate TH97/10561QM 1N4152 Certificate TW00/17276EM HIGH SPEED SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • High switching speed: max. 4 ns • Peak reverse voltage:max. 40 V • Pb / RoHS Free 1.00 (25.4) min. 0.079(2.0 )max. 0.150 (3.8) max.
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TH97/10561QM
1N4152
TW00/17276EM
DO-204AH)
DO-35
1N4152
DO-204AH
Diode 1n4152
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Untitled
Abstract: No abstract text available
Text: One. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 1N4152 DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Parameter Symbol VfiRM TA=25-0Unie«otn«wisenoted Value
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1N4152
DO-35
25-0UnieÂ
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Untitled
Abstract: No abstract text available
Text: 1N4152 HIGH SPEED SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • High switching speed: max. 4 ns • Peak reverse voltage:max. 40 V • Pb / RoHS Free 1.00 (25.4) min. 0.079(2.0 )max. 0.150 (3.8) max. Cathode Mark MECHANICAL DATA : 1.00 (25.4) min.
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1N4152
DO-204AH)
DO-35
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1N4152
Abstract: 7121 1N4152 fairchild
Text: 1N4152 1N4152 DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units Maximum Repetitive Reverse Voltage 40 V IF AV Average Rectified Forward Current 200 mA IFSM Tstg Non-repetitive Peak Forward Surge Current
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1N4152
DO-35
1N4152
7121
1N4152 fairchild
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1N4152
Abstract: No abstract text available
Text: 1N4152 1N4152 DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units Maximum Repetitive Reverse Voltage 40 V IF AV Average Rectified Forward Current 200 mA IFSM Tstg Non-repetitive Peak Forward Surge Current
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1N4152
DO-35
1N4152
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1N4152
Abstract: Diode 1n4152 DO-204AH
Text: 1N4152 HIGH SPEED SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • High switching speed: max. 4 ns • Peak reverse voltage:max. 40 V • Pb / RoHS Free 1.00 (25.4) min. 0.079(2.0 )max. 0.150 (3.8) max. Cathode Mark MECHANICAL DATA : 1.00 (25.4) min.
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1N4152
DO-204AH)
DO-35
1N4152
Diode 1n4152
DO-204AH
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1N4548
Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Text: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A
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1N100
1N100A
1N101
1N102
1N103
1N104
1N108
1N111
1N112
1N113
1N4548
1N4008
Diode 1N4008
1N4008 diode
1N1744A
1n4148
1N523b
2N4418
BAX15
1n5428
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Germanium diode
Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
Text: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes
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1N34A
1N38A
1N60A
1N100A
1N270
1N276
1N277
1N456
1N459
1N456A
Germanium diode
5 amp diode rectifiers
Germanium Diode OA91
aa117 diode
diode
2 Amp rectifier diode
2 Amp zener diode
DIODE 1N649
germanium rectifier diode
OA95 diode
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IN5062
Abstract: IN5625 scr C106B LN4007 diode in5061 in5625 diode in5626 IN5060 IN5624 IN5060 diode
Text: Diodes Switching Diode DO-35 V„(V) 25(30) lo(MA) 1N4152 1N4150 150 70 50 1N4151 1N4153 200 1N4150 1N4606 50 70 75 1N914, A, B 1N916, A, B 1N4149 1N4446 1N4447 1N4448 1N4449 1N4148 Surface M ount Diode V„(V) 30 Iq(MA) DLN4152 150 75 DLN914, A, B DLN916, A, B
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DO-35)
1N4152
1N4150
1N4151
1N4153
1N914,
1N916,
1N4149
1N4446
1N4447
IN5062
IN5625
scr C106B
LN4007 diode
in5061
in5625 diode
in5626
IN5060
IN5624
IN5060 diode
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1N4149
Abstract: 1N4150 1N4151 1N4152 1N4153 1N4447 1N4449 1N914 1N44491
Text: 1N 914 .1N 4454 SILICON EPITAXIAL PLANAR DIODE Silicon Expitaxial Planar Diode for general purpose and switching. The types 1N4149, 1N4447 and 1N4449 are also availble in glass case DO-34. Glass case JEDEC DO-35 Glass case JEDEC DO-34 Dimensions in mm Dimensions in mm
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1N4149,
1N4447
1N4449
DO-34.
DO-35
DO-34
1N914
1N41491*
1N44491'
1N4450
1N4149
1N4150
1N4151
1N4152
1N4153
1N44491
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1N4152
Abstract: in4305 1N4305 1N4444 Diode 1n4152
Text: COMPUTER DIODE 1N4152, 1N4305, 1N4444 Switching FEATURES • Metallurgical Bond • Planar Passivated • DO-35 Package DESCRIPTION This series offers Metallurgical Bonding and is very popular for general purpose switching applications. ABSOLUTE MAXIMUM RATINGS, AT 25 °C
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1N4152,
1N4305,
1N4444
DO-35
1N4152
1N4305
200mAdc
500mA
1N41528
1N4152
in4305
1N4305
1N4444
Diode 1n4152
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Diode 1n4152
Abstract: 1N4152
Text: 1N4152, 1N4305, 1N4444 COMPUTER DIODE Sw itching ABSOLUTE MAXIMUM RATINGS, AT 25 "C 1N4152 1N4305 1N4444 Peak Reverse V o lta g e . 40V 75V 70V. Reverse Working V o lta g e. 3 0 V . 5 0 V . 50V .
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1N4152,
1N4305,
1N4444
1N4152
1N4305
1N4444
100mA
Diode 1n4152
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diode D07-15
Abstract: diode d07 1N3605 DIODE 1N4087 1N9148 2N2222 chip 1N4532 1N814 D07 15 DIODE 1N3605
Text: SILICON SIGNAL DIODES 100 MA TYPFS SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification
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1N251
1N252
1N461
1N625
1N62G
1N814
1N903
1N903A
1N904
1N914
diode D07-15
diode d07
1N3605
DIODE 1N4087
1N9148
2N2222 chip
1N4532
D07 15
DIODE 1N3605
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PNP Transistor 2N2222 equivalent
Abstract: DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent 2N2222 npn small signal current gain 2N2222 chip DIODE 1N9148 transistor npn high speed switching
Text: SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification Sheet No. 1 35.90 1N914B M46P-X510
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1N914
1N914A
1N914B
M46P-X510
1N3064
M46P-X507
1N3600
1N3605
M46P-X516
1N4150
PNP Transistor 2N2222 equivalent
DIODE 1N3605
2N2907 equivalent
equivalent transistor 2N2222
2n2222 npn transistor general purpose
1N3605 equivalent
2N2222 npn small signal current gain
2N2222 chip
DIODE 1N9148
transistor npn high speed switching
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In5062
Abstract: in 5062 1N4007W 1N4007 toshiba diode 1n4007 toshiba SCR 1 c106d 1N4004 toshiba 1N5059 diode scr 2n6396 1N4007 rectifier diode
Text: 9097250 TOSHIBA CDI S C R E T E /O P T O TOSHIBA -CDISCRETE/OPTOJ 9 0D 16494 DE § /3 □OlkMTM 7 Diodes Switching Diode DO-35) VB(V) lo(MA) 2 5 (3 0 ) 50 1N4152 1N4150 1N 4151 1N 4153 \ 150 200 70 1N4150 1N 4606 50 70 75 1 N 914, A , B 1 N 916, A , B 1 N 4149
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DO-35)
1N4152
1N4150
DLN914,
DLN916,
DLN4149
DLN4446
DLN4447
DLN4448
In5062
in 5062
1N4007W
1N4007 toshiba
diode 1n4007 toshiba
SCR 1 c106d
1N4004 toshiba
1N5059 diode
scr 2n6396
1N4007 rectifier diode
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1N4007 TOSHIBA
Abstract: diode 1n4007 toshiba IN5625 IN5060 diode scr C106D MAC525-6 1N4004 toshiba C122B 1n914 surface mount diode 1N4148 surface mount
Text: 9097250 T OS H I B A CD I S C R E T E / O P T O > TOSHIBA iDISCRETE/0PT0> 90D 16494 D Tzòt~ ts DE l'iO'iTSSO 001b4TM 7 T 'O -b 'O ? Diodes Switching Diode DO-35 VB(V) 2 5 (3 0 ) lo(MA) 1N4152 1N4150 150 70 50 1N4151 1N4153 200 1N4150 1N4606 50 70 75 1N914, A, B
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001b4TM
DO-35)
1N4152
1N4150
1N4151
1N4153
1N914,
1N916,
1N4149
1N4446
1N4007 TOSHIBA
diode 1n4007 toshiba
IN5625
IN5060 diode
scr C106D
MAC525-6
1N4004 toshiba
C122B
1n914 surface mount diode
1N4148 surface mount
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ir5m
Abstract: in4152 1N4152 Diode 1n4152 1N4151 250M TOSHIBA 1N4151
Text: TO SHIBA {DISCRETE/O PTO} 9097250 TO SHIBA PISCR ETE/OPTO 1N4151 — 1N4153 . , 67C 09291 Silicon Epitaxial Planar Type Diode TENTATIVE Unit in mm COMMUNICATION AND INDUSTRIAL APPLICATIONS. HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS, MAXIMUM RATINGS (Ta=25°C)
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1N4151-1N4153
1N4151/3
1N4152
1N4152/3
1N4151
1N4152
ir5m
in4152
Diode 1n4152
250M
TOSHIBA 1N4151
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1N4153 silicon diodes
Abstract: 1N4151 1N4152 1N4153 1N4154 D0-35
Text: 1N4151 THRU 1N4l 5A Central Semiconductor Corp. Central Semiconductor Corp. SILICON SWITCHING DIODE JEDEC DO-35 CASE 1 4 5 Adams Avenue Hauppauge, New York 11 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR 1N4151 Series types are Hermetically Sealed Silicon Diodes
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D0-35
1N4151
1N4152
1N4153
1N4154
1N4153 silicon diodes
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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