1N3070
Abstract: CMPD2003 CMPD2004 CPD60
Text: PROCESS Central CPD60 Switching Diode TM Semiconductor Corp. High Voltage Switching Diode Chip PROCESS DETAILS PROCESS DIE SIZE EPITAXIAL PLANAR DIE THICKNESS ANODE BONDING PAD AREA 8.0 MILS TOP SIDE METALIZATION BACK SIDE METALIZATION Al - 15,000Å 17.5 x 17.5 MILS
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CPD60
CMPD2003
CMPD2004
1N3070
1N3070
CMPD2003
CMPD2004
CPD60
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DIODE 1N3070
Abstract: 1N3070 CMPD2003 CMPD2004 CPD60 1N3070 DIODE
Text: PROCESS CPD60 Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 17.5 x 17.5 MILS Die Thickness 8.0 MILS Anode Bonding Pad Area 8.0 MILS DIAMETER Top Side Metalization Al - 15,000Å Back Side Metalization Au - 6,000Å
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CPD60
CMPD2003
CMPD2004
1N3070
DIODE 1N3070
1N3070
CMPD2003
CMPD2004
CPD60
1N3070 DIODE
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1N3070
Abstract: DIODE 1N3070 CMDD2004 CMLD2004 CMOD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004 CPD80V
Text: Central TM Semiconductor Corp. PROCESS CPD80V Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å
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CPD80V
CMPD2003
CMPD2004
CMPD2005
1N3070
CMDD2004
CMSD2004
CMOD2004
CMXD2004
CMLD2004
1N3070
DIODE 1N3070
CMDD2004
CMLD2004
CMOD2004
CMPD2003
CMPD2004
CMSD2004
CMXD2004
CPD80V
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C 704 diode
Abstract: DIODE R3 1N3070 CMDD2004 CMLD2004 CMOD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004
Text: PROCESS CPD80V Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å
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CPD80V
CMPD2003
CMPD2004
CMPD2005
1N3070
CMDD2004
CMSD2004
CMOD2004
CMXD2004
CMLD2004
C 704 diode
DIODE R3
1N3070
CMDD2004
CMLD2004
CMOD2004
CMPD2003
CMPD2004
CMSD2004
CMXD2004
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1N3070
Abstract: CMDD2003 CMDD2004 CMPD2003 CMPD2004 CPD80
Text: Central PROCESS TM Semiconductor Corp. CPD80 Switch Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 9.0 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization
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CPD80
CMPD2003
CMPD2004
1N3070
CMDD2003
CMDD2004
22-October
1N3070
CMDD2003
CMDD2004
CMPD2003
CMPD2004
CPD80
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CMOD2004
Abstract: 1N3070 CMDD2004 CMLD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004 CPD80V
Text: PROCESS CPD80V Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au.As - 13,000Å
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CPD80V
CMPD2003
CMPD2004
CMPD2005
1N3070
CMDD2004
CMSD2004
CMOD2004
CMXD2004
CMLD2004
CMOD2004
1N3070
CMDD2004
CMLD2004
CMPD2003
CMPD2004
CMSD2004
CMXD2004
CPD80V
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CMOD2004
Abstract: CPD80V CMDD2004 1N3070 CMLD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004
Text: PROCESS CPD80V Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au.As - 13,000Å
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CPD80V
CMPD2003
CMPD2004
CMPD2005
1N3070
CMDD2004
CMSD2004
CMOD2004
CMXD2004
CMLD2004
CMOD2004
CPD80V
CMDD2004
1N3070
CMLD2004
CMPD2003
CMPD2004
CMSD2004
CMXD2004
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Untitled
Abstract: No abstract text available
Text: FEATURES 1N3070- 1 • 1N3070-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF• • • • 19500/169 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature:
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1N3070-
1N3070-1
500mW
100mA,
667mA/Â
MILPRF-19500/169
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DIODE 1N3070
Abstract: 1N307 1N3070 JANTX 1N3070-1
Text: FEATURES 1N3070-1 • 1N3070-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF• • • • 19500/169 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature:
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1N3070-1
1N3070-1
500mW
100mA,
667mA/
MILPRF-19500/169
DIODE 1N3070
1N307
1N3070 JANTX
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DIODE 1N3070
Abstract: 1N3070 high voltage diode 1N3070 DIODE 1N3070 DIODE DATASHEET MMBD1401
Text: 1N3070 1N3070 DO-35 General Purpose High Voltage Diode Sourced from Process 1J. See MMBD1401 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage 200 V IO Average Rectified Current
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1N3070
DO-35
MMBD1401
DIODE 1N3070
1N3070
high voltage diode
1N3070 DIODE
1N3070 DIODE DATASHEET
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Untitled
Abstract: No abstract text available
Text: FEATURES • 1N3070UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF- 1N3070UR- 1 • • • • • 19500/169 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION ALSO AVAILABLE AS LL3070 MAXIMUM RATINGS AT 25 °C Operating Temperature:
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1N3070UR-1
1N3070UR-
LL3070
500mW
100mA,
667mA/Â
MILPRF-19500/169
DO-213AA
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1N3070
Abstract: DIODE 1N3070
Text: 1N3070 High Speed High Conductance Diode. Working Inverse Voltage 175 V. 1.35 Dio. Page 1 of 1 Enter Your Part # Home Part Number: 1N3070 Online Store 1N3070 Diodes High Speed High Conductance D iode. Working Inverse Transistors Voltage 175 V. Integrated Circuits
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1N3070
1N3070
DO-35
com/1n3070
DIODE 1N3070
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1N3070UR-1
Abstract: DO-213AA
Text: FEATURES 1N3070UR-1 • 1N3070UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF• • • • • 19500/169 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION ALSO AVAILABLE AS LL3070 MAXIMUM RATINGS AT 25 °C Operating Temperature:
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1N3070UR-1
1N3070UR-1
LL3070
500mW
100mA,
667mA/
MILPRF-19500/169
DO-213AA
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Germanium diode
Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
Text: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes
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1N34A
1N38A
1N60A
1N100A
1N270
1N276
1N277
1N456
1N459
1N456A
Germanium diode
5 amp diode rectifiers
Germanium Diode OA91
aa117 diode
diode
2 Amp rectifier diode
2 Amp zener diode
DIODE 1N649
germanium rectifier diode
OA95 diode
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Sprague 1N3600
Abstract: diode R 360 BL diode a13 TND907 diode arrays tnd903 A1090 sprague TND 16-pin a plastic package
Text: ÛS13ÛS0 SPRAGUE/SEM ICOND GROUP 8 5 1 4 0 1 9 S P RA GU E. S E M I C O N D S / ICS 0003Ö05 □ SERIES TND DIODE ARRAYS SERIES TND DIODE ARRAYS rT ,he TND series consists o f diode arrays packaged •*- in 14-pin and 16-pin dual in-line plastic pack ages for easy automatic insertion and better printed
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PDF
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14-pin
16-pin
1N3070,
1N3595,
1N3600,
1N4153,
1N4447
TND933
TND940
TND938
Sprague 1N3600
diode R 360 BL
diode a13
TND907
diode arrays
tnd903
A1090
sprague TND 16-pin a plastic package
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MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir
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OCR Scan
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PDF
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108th
MT1115
2N3303
FPT100 phototransistor
UA739 equivalent
transistor bc 554 pnp
mt1039
ft2974
fairchild 2N3565
FD6666 diode
transistor npn Epitaxial Silicon SST 117
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d918
Abstract: D938 TND903 TND907
Text: SERIES TND D IO D E ARRAYS The TND series consists of diode arrays packaged in 14-pin and 16-pin dual in-line plastic packages for easy automatic insertion and better printed circuit board density. In addition to the diode characteristics for standard products
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OCR Scan
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PDF
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14-pin
16-pin
1N3070,
1N3595,
1N3600,
1N4153,
1N4447
d918
D938
TND903
TND907
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tnd903
Abstract: Allegro MicroSystems tnd 903 diode
Text: ALLEGRO MICROSYSTEMS INC 0S0433Ö OODbMDG QS3 • ALCR SERIES TND 'T - ^ V Z ^ f m DIODE ARRAYS The TND series consists of diode arrays packaged in 14-pin and 16-pin dual in-line plastic packages for easy automatic insertion and better printed circuit board density.
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OCR Scan
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PDF
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0S0433Ã
14-pin
16-pin
1N3070
1N3595,
1N3600
1N4153,
1N4447
TND903
TND907
tnd903
Allegro MicroSystems tnd 903 diode
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ND921
Abstract: br 903
Text: SERIES TND D IO D E ARRAYS The TND series consists of diode arrays packaged in 14-pin and 16-pin dual in-line plastic packages for easy autom atic insertion and better printed circuit board density. In addition to the diode characteristics for standard products
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OCR Scan
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PDF
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14-pin
16-pin
1N3070,
1N3595,
1N3600,
1N4153,
1N4447
TND903
TND905
TND907
ND921
br 903
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FSA2501P
Abstract: FSA2501M FSA2500M FSA1410M MONOLITHIC DIODE ARRAYS FSA2501 MONOLITHIC DIODE ARRAYS fairchild 1n4307 1N3070 JANTX 1N4307 FA3310
Text: FAIRCHILD DIODES DIODES MATCHED DIODE ASSEMBLIES PLASTIC AND GLASS PACKAGES Number of Diodes Package Item VF Matching -55° C to +100° C Basic Diode ip Range AVp Specification mA mV 2 Moulded Pair (308) 2 Discrete Pair DO-7 or DO-35 4 Moulded Quad (310)
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OCR Scan
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PDF
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DO-35
1n914
FA2310E
FA2310U
FA4310E
FA4310U
FA3310
1N3070
FA2320E
FSA2501P
FSA2501M
FSA2500M
FSA1410M
MONOLITHIC DIODE ARRAYS
FSA2501
MONOLITHIC DIODE ARRAYS fairchild 1n4307
1N3070 JANTX
1N4307
FA3310
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TND903
Abstract: TND907 TND908 1N4447 1N3070 1N3595 1N3800 1N4153 TND918 TND921
Text: I n te r n a tio n a l TND903 thru TND942 S e m ic o n d u c to r , I n c . DIODE ARRAYS — II 6\ - - The TND series of diode arrays are packaged in 14 and 16 pin d u al-in-line p la s tic packages fo r easy autom atic insertion and better
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PDF
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TND903
TND942
TND903
TND907
TND908
TND918
TND921*
1N3070,
1N3595,
1N3800,
1N4447
1N3070
1N3595
1N3800
1N4153
TND921
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IN3070
Abstract: 1N3070 IN3070 diode DIODE 1N3070
Text: 1N3070 COMPUTER DIODE High Voltage Switching FEATURES • Metallurgical Bond • Planar Passivated • High Voltage • DO-35 Package DESCRIPTION This series offers M etallurgical Bonding and is specifically designed for high voltage applications. ABSOLUTE MAXIMUM RATINGS, AT 25 °C
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PDF
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1N3070
DO-35
200mAdc
500mA
T-r-100
IN3070
1N3070
IN3070 diode
DIODE 1N3070
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TND908
Abstract: tnd903
Text: DIODE ARRAYS T h e T N D se rie s c o n sists of diode arrays pa cka ge d in 14-pin and 16-pin dual in-line plastic p a ck a g e s for e a s y autom atic insertion and better printed circuit board density. In addition to the diod e c h aracteristics for standard products
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OCR Scan
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PDF
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14-pin
16-pin
1N3070,
1N3595,
1N3600,
1N4153,
TND903
TND908
TND918
TND933
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TND903
Abstract: TND908 TND905 1N3070 1N3595 1N3800 1N4153 TND907 TND918 TND921
Text: I n t e r n a t/ o n a l T N D 903 thru S e m ic o n d u c t o r , I n c . TND942 DIODE ARRAYS The TND series of diode arrays are packaged in 14 and 16 pin dual-in-line p la stic packages fo r easy autom atic insertion and better printed circ u it board density.
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OCR Scan
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PDF
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TND903
TND942
TND903
TND907
TND908
TND918
TND921*
1N3070,
1N3595,
1N3800,
TND905
1N3070
1N3595
1N3800
1N4153
TND921
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